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41. 发明授权

US5708165A Cephem compound, its production and its use for producing cephem antibiotics 失效
标题翻译： Cephem化合物，其生产及其用于生产头孢类抗生素的用途
公开(公告)号：US5708165A
公开(公告)日：1998-01-13
申请号：US273912
申请日：1994-07-12
申请人： Mari Yuasa , Kazuyuki Yamagata , Hirokazu Murata , Masashi Komatsu , Isao Yoshida
发明人： Mari Yuasa , Kazuyuki Yamagata , Hirokazu Murata , Masashi Komatsu , Isao Yoshida
IPC分类号： C07D501/16 , C07D501/00 , C07D501/04 , C07D501/18 , C07D501/20 , C07D501/22 , C07D501/24 , C07D501/56 , C07D501/46
CPC分类号： C07D501/00 , Y02P20/55
摘要： A 3-�(E)-1-propenyl!cephem compound represented by formula (I): ##STR1## wherein R represents hydrogen, a protective group for an amino group, or the group shown by formula (II): ##STR2## in which R.sup.3 is a protective group for an amino group, R.sup.4 is a protective group for a hydroxyl group, and W is --CH.dbd. or --N.dbd.; R.sup.2 represents a protective group for a carboxyl group; and X represents hydrogen or chlorine. The compound is useful as an intermediate for producing cephem antibiotics and is prepared by isomerizing the corresponding 3-�(Z)-1-propenyl!cephem compound in an inert organic solvent in the presence of an aromatic thiol. The compound of formula (I) wherein X is chlorine can be converted into a 3-�(E)-3-ammonio-1-propenyl!cephem derivative through the reaction with a tertiary amine.
摘要翻译：由式（I）表示的3 - [（E）-1-丙烯基]头孢烯化合物：其中R表示氢，氨基保护基或式（II）所示的基团：（II）其中R3是氨基的保护基，R4是羟基的保护基，W是-CH =或-N =; R2表示羧基的保护基; X表示氢或氯。该化合物可用作生产头孢类抗生素的中间体，并且通过在惰性有机溶剂中在芳族硫醇存在下使相应的3 - [（Z）-1-丙烯基]头孢烯化合物异构化而制备。其中X为氯的式（I）化合物可通过与叔胺的反应转化为3 - [（E）-3-氨基-1-丙烯基]头孢烯衍生物。

42. 外观设计

USD353381S Internal combustion engine 失效
公开(公告)号：USD353381S
公开(公告)日：1994-12-13
申请号：US9694
申请日：1993-06-21
申请人： Isao Yoshida , Kazuo Shimizu
设计人： Isao Yoshida , Kazuo Shimizu

43. 发明授权

US5299091A Packaged semiconductor device having heat dissipation/electrical connection bumps and method of manufacturing same 失效
标题翻译：具有散热/电连接凸块的封装半导体器件及其制造方法
公开(公告)号：US5299091A
公开(公告)日：1994-03-29
申请号：US854028
申请日：1992-03-19
申请人： Akio Hoshi , Yukihiro Sato , Toyomasa Koda , Isao Yoshida , Kouzou Sakamoto
发明人： Akio Hoshi , Yukihiro Sato , Toyomasa Koda , Isao Yoshida , Kouzou Sakamoto
IPC分类号： H01L23/34 , H01L23/36 , H01L23/433 , H01L23/495 , H05K1/02 , H05K1/11 , H05K3/34 , H05K7/20
CPC分类号： H01L23/36 , H01L23/4334 , H01L23/4951 , H01L23/49568 , H01L2224/16 , H01L2224/16245 , H01L2924/01014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/3011 , H05K1/0201 , H05K1/111 , H05K3/3421 , Y10T29/49121
摘要： A packaged semiconductor device has, according to one embodiment of the present invention, a semiconductor pellet having an electronic circuit therein and electrode pads formed on a principal surface of the pellet, a plurality of electrical connection bumps provided on the electrode pads, a plurality of heat dissipation bumps provided at the principal surface of the pellet and electrically insulated from the electronic circuit and the electrode pads, electrical connection leads for the electronic circuit, heat dissipators for the electronic circuit and a packaging material for sealing pellet, the electrical connection bumps, the heat dissipation bumps and parts of the electrical connection leads and the heat dissipator. One or more of the heat dissipation bumps are arranged relatively nearer to the electronic circuit than the electrical connection bumps for thermal coupling to the electronic circuit. One or more of the electrical connection leads may be engaged with the electrical connection bumps and the heat dissipation bumps and/or one or more of the dissipators may be engaged with the heat dissipation bumps and the electrical connection bumps, thereby serving to effect electrical connection to and heat dissipation for the electronic circuit.
摘要翻译：根据本发明的一个实施例，封装的半导体器件具有其中具有电子电路的半导体芯片和形成在芯片的主表面上的电极焊盘，设置在电极焊盘上的多个电连接凸块，多个提供在颗粒主表面上的散热凸块与电子电路和电极焊盘电绝缘，用于电子电路的电气连接引线，用于电子电路的散热器和用于密封颗粒的包装材料，电连接凸块，散热凸块和电气连接引线和散热器的部件。一个或多个散热凸块被布置成比用于热耦合到电子电路的电连接凸块相对更靠近电子电路。一个或多个电连接引线可以与电连接凸块接合，并且散热凸块和/或一个或多个散热器可以与散热凸块和电连接凸块接合，从而用于实现电连接电子电路的散热和散热。

44. 外观设计

USD314775S Snow plow 失效
公开(公告)号：USD314775S
公开(公告)日：1991-02-19
申请号：US115031
申请日：1987-10-30
申请人： Isao Yoshida , Tatsuya Okuhara , Takahiro Hoshino
设计人： Isao Yoshida , Tatsuya Okuhara , Takahiro Hoshino

45. 发明授权

US4870698A Output power control circuit for a mobile radio apparatus 失效
标题翻译：用于移动无线电设备的输出功率控制电路
公开(公告)号：US4870698A
公开(公告)日：1989-09-26
申请号：US113115
申请日：1987-10-27
申请人： Tsutomu Katsuyama , Isao Yoshida , Toyoo Kanai , Yasunobu Taguchi
发明人： Tsutomu Katsuyama , Isao Yoshida , Toyoo Kanai , Yasunobu Taguchi
IPC分类号： H04B1/40 , H03G3/20 , H04B1/036 , H04B1/04 , H04B7/005 , H04B7/26
CPC分类号： H04W52/52 , H04B1/036 , H04B2001/0416 , H04W52/36 , Y02B60/50
摘要： An output power control circuit is provided in a casing of a mobile radio apparatus together with an automatic power control circuit and an RF signal amplifier. The output power control circuit applied level control signals to the automatic power control circuit for maintaining the power level of the output RF signal of the RF amplifier at one of a plurality of output power levels corresponding to the level control signals. The output power control circuit has a receiver, a temperature sensing circuit and a logic circuit. The receiver receives RF signals transmitted by a master station and detects power level setting command signals included in the received RF signal. The temperature sensing circuit detects an internal temperature of the casing and provides a power reduction signal upon detecting that the internal temperature has exceeded a predetermined temperature. The logic circuit receives the power level setting command signal from said receiver, and generates a level control signal for determining an output power level corresponding to the power level setting command signal, and generates a level control signal for determining an output power level which is lower than that specified by the power level setting command signal upon receiving the power reduction signal from the temperature sensing circuit.
摘要翻译：输出功率控制电路与自动功率控制电路和RF信号放大器一起设置在移动无线电设备的壳体中。输出功率控制电路将电平控制信号施加到自动功率控制电路，用于将RF放大器的输出RF信号的功率电平维持在与电平控制信号对应的多个输出功率电平中的一个上。输出功率控制电路具有接收器，温度检测电路和逻辑电路。接收机接收由主站发送的RF信号，并且检测包括在所接收的RF信号中的功率电平设置命令信号。温度检测电路检测到壳体的内部温度，并且在检测到内部温度已经超过预定温度时提供功率降低信号。逻辑电路接收来自所述接收机的功率电平设定命令信号，并产生用于确定与功率电平设定指令信号对应的输出功率电平的电平控制信号，并生成电平控制信号，以确定较低的输出功率电平比从温度检测电路接收到功率降低信号时由功率电平设定指令信号指定的值高。

46. 发明授权

US4831424A Insulated gate semiconductor device with back-to-back diodes 失效
标题翻译：具有背对背二极管的绝缘栅半导体器件
公开(公告)号：US4831424A
公开(公告)日：1989-05-16
申请号：US62388
申请日：1987-06-15
申请人： Isao Yoshida , Takeaki Okabe , Mitsuo Ito , Kazutoshi Ashikawa , Tetsuo Iijima
发明人： Isao Yoshida , Takeaki Okabe , Mitsuo Ito , Kazutoshi Ashikawa , Tetsuo Iijima
IPC分类号： H03F1/52 , H01L27/02 , H01L27/04 , H01L27/06 , H01L29/78 , H02H7/20 , H03F1/42
CPC分类号： H01L29/7808 , H01L27/0255 , H01L29/7811 , H01L29/0692 , H01L29/866 , H01L2924/0002
摘要： An insulated gate semiconductor device contains a protective element for protecting the gate electrode of an insulated gate field effect transistor. The protective element is formed of the same semiconductor layer as that of the gate electrode of the insulated gate field effect transistor and is formed integrally with the gate electrode on an insulating film formed on the surface of a semiconductor substrate.
摘要翻译：绝缘栅半导体器件包含用于保护绝缘栅场效应晶体管的栅电极的保护元件。保护元件由与绝缘栅场效应晶体管的栅电极相同的半导体层形成，并与形成在半导体基板的表面上的绝缘膜上的栅电极一体形成。

47. 发明授权

US4473856A Overcurrent protection apparatus for DC motor 失效
标题翻译：直流电机过电流保护装置
公开(公告)号：US4473856A
公开(公告)日：1984-09-25
申请号：US335358
申请日：1981-12-29
申请人： Kenichiroh Takahashi , Hiromitsu Nakano , Isao Yoshida
发明人： Kenichiroh Takahashi , Hiromitsu Nakano , Isao Yoshida
IPC分类号： H02H7/085 , H02H3/093 , H02H7/08
CPC分类号： H02H7/0833
摘要： An overcurrent protection apparatus for a DC motor which can be used with a speed control system of a DC motor to prevent an overcurrent condition arising when the DC motor is run with a heavy load or locked by an overload from burning or overheating windings of the motor. The apparatus is constructed using at least one integrated circuit and includes a current mirror circuit for detecting an overcurrent and for cutting off the supply current of the DC motor. A timing circuit prevents overcurrents lasting only a short time from triggering the apparatus to shut down the motor. Once the apparatus is triggered to shut off the motor, the motor will remain off for an indefinite period of time until the apparatus is reset.
摘要翻译：一种用于直流电动机的过电流保护装置，其可与直流电动机的速度控制系统一起使用，以防止当直流电动机由重负载运行或被电动机的燃烧或过热绕组过载锁定时产生的过电流条件。该装置使用至少一个集成电路构造，并且包括用于检测过电流并用于切断直流电动机的供电电流的电流镜电路。定时电路可防止持续时间短的过电流触发装置关闭电机。一旦设备触发关闭电机，电机将保持关闭无限期，直到设备复位为止。

48. 发明授权

US4351674A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4351674A
公开(公告)日：1982-09-28
申请号：US182825
申请日：1980-08-29
申请人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
发明人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
IPC分类号： H01L27/04 , H01L21/22 , H01L21/268 , H01L21/3215 , H01L21/822 , H01L29/78 , H01L21/265 , H01L21/263
CPC分类号： H01L21/268 , H01L21/32155 , Y10S148/091
摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要翻译：含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

49. 发明授权

US4296216A Thermoplastic resin composition 失效
标题翻译：热塑性树脂组合物
公开(公告)号：US4296216A
公开(公告)日：1981-10-20
申请号：US127287
申请日：1980-03-05
申请人： Hajime Sakano , Mikio Kodama , Koichi Nakayama , Isao Yoshida , Atsunori Inoue
发明人： Hajime Sakano , Mikio Kodama , Koichi Nakayama , Isao Yoshida , Atsunori Inoue
IPC分类号： C08L25/12 , C08L51/04 , C08L59/02 , C08L77/00 , C09D159/02 , C09J177/00 , C08L55/02 , C08L59/04
CPC分类号： C08L77/00 , C08L25/12 , C08L51/04 , C09D159/02 , C09J177/00 , C08L59/02
摘要： A thermoplastic resin composition excellent in coating property which comprises (A) at least one of polyamide resins and polyacetal resins, (B) at least one of aromatic monovinyl compound/vinyl cyanide copolymers comprising units of aromatic monovinyl compounds and units of vinyl cyanides in a weight ratio of 60:40 to 80:20 and having an intrinsic viscosity of 0.3 to 1.1 and (C) at least one of conjugated diene rubber/vinyl cyanide graft copolymers comprising units of conjugated diene rubbers in an amount of 5 to 45% by weight based on the weight of the graft copolymers in a weight proportion of the components (A), (B) and (C) being 0.1-10: 5-90: 5-94.9.
摘要翻译：一种涂料性能优异的热塑性树脂组合物，其包含（A）至少一种聚酰胺树脂和聚缩醛树脂，（B）至少一种芳族单乙烯基化合物/乙烯基氰共聚物，其包含芳族单乙烯基化合物单元和乙烯基氰化物单元重量比为60:40至80:20，特性粘度为0.3至1.1，（C）至少一种共轭二烯橡胶/乙烯基氰接枝共聚物，其包含共轭二烯橡胶单元的量为5至45％基于组分（A），（B）和（C）的重量比例的接枝共聚物的重量的重量为0.1-10:5-90:5-94.9。

50. 发明授权

US4213140A Insulated-gate semiconductor device 失效
标题翻译：绝缘栅半导体器件
公开(公告)号：US4213140A
公开(公告)日：1980-07-15
申请号：US922371
申请日：1978-07-06
申请人： Takeaki Okabe , Isao Yoshida , Mineo Katsueda , Hidefumi Ito , Masatomo Furumi , Shikayuki Ochi
发明人： Takeaki Okabe , Isao Yoshida , Mineo Katsueda , Hidefumi Ito , Masatomo Furumi , Shikayuki Ochi
IPC分类号： H03F1/52 , H01L27/02 , H01L27/06 , H01L29/78 , H03F1/42
CPC分类号： H01L27/0251
摘要： An insulated-gate semiconductor device wherein a first region is formed in the surface of a semiconductor substrate, the first region having a conductivity type opposite to that of the substrate, two insulated-gate FET's are formed within the first region, the drain of the first insulated-gate FET and that of the second insulated-gate FET are made common, the drains are electrically connected to the first region, and the gate of the first insulated-gate FET and the source of the second insulated-gate FET, and the gate of the second insulated-gate FET and the source of the first insulated-gate FET are respectively connected, thereby to prevent the occurrence of a negative resistance.
摘要翻译：一种绝缘栅半导体器件，其中第一区域形成在半导体衬底的表面中，所述第一区域具有与衬底的导电类型相反的导电类型，在所述第一区域内形成有两个绝缘栅FET，第一绝缘栅极FET和第二绝缘栅极FET的漏极共同，漏极电连接到第一区域，第一绝缘栅极FET的栅极和第二绝缘栅极FET的源极，以及第二绝缘栅FET的栅极和第一绝缘栅FET的源极分别连接，从而防止产生负电阻。

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