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41. 发明授权

US6136664A Filling of high aspect ratio trench isolation 失效
标题翻译：填充高纵横比沟槽隔离
公开(公告)号：US6136664A
公开(公告)日：2000-10-24
申请号：US908296
申请日：1997-08-07
申请人： Laertis Economikos , David Edward Kotecki , Jack A. Mandelman
发明人： Laertis Economikos , David Edward Kotecki , Jack A. Mandelman
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76227
摘要： A method of forming a trench isolation on a semiconductor substrate comprising the steps of forming a trench in the substrate, partially filling the trench with a first layer of polysilicon, oxidizing the first layer of polysilicon, partially filling the trench with at least a second layer of polysilicon, and oxidizing the second layer of polysilicon. By utilizing the method of the present invention, formation of voids and defects in a trench isolation having a high aspect ratio can be prevented.
摘要翻译：一种在半导体衬底上形成沟槽隔离的方法，包括以下步骤：在衬底中形成沟槽，用第一多晶硅层部分地填充沟槽，氧化第一多晶硅层，用至少第二层部分地填充沟槽的多晶硅，并氧化第二层多晶硅。通过利用本发明的方法，可以防止形成具有高纵横比的沟槽隔离中的空隙和缺陷。

42. 发明授权

US6037193A Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity 失效
标题翻译：使用低导热性的插入件密封高导热性的基板
公开(公告)号：US6037193A
公开(公告)日：2000-03-14
申请号：US792073
申请日：1997-01-31
申请人： Mario J. Interrante , Laertis Economikos , Lester Wynn Herron
发明人： Mario J. Interrante , Laertis Economikos , Lester Wynn Herron
IPC分类号： H01L23/02 , H01L23/10 , H01L23/28
CPC分类号： H01L23/10 , H01L2224/16 , H01L2924/00014 , H01L2924/01079 , H01L2924/09701 , H01L2924/16152 , H01L2924/163
摘要： The present invention relates generally to a new process for hermetically sealing of a high thermally conductive substrate, such as, an aluminum nitride substrate, using a low thermally conductive interposer and structure thereof. More particularly, the invention encompasses a hermetic cap which is secured to an aluminum nitride substrate using the novel thermal interposer. The novel thermal interposer basically comprises of layers of relatively high thermal conductive metallic materials sandwiching a core layer of low thermal conductive metallic material.
摘要翻译：本发明一般涉及一种使用低导热插入件及其结构对诸如氮化铝衬底的高导热衬底进行气密密封的新方法。更具体地，本发明包括使用新型热插入件固定到氮化铝衬底的密封帽。新型热插入件基本上由具有较高导热金属材料的层组成，夹层有低导热金属材料的芯层。

43. 发明授权

US5536605A Method of repairing apertured laser metal mask 失效
标题翻译：修复多孔激光金属掩模的方法
公开(公告)号：US5536605A
公开(公告)日：1996-07-16
申请号：US446356
申请日：1995-05-22
申请人： Rajesh S. Patel , Laertis Economikos
发明人： Rajesh S. Patel , Laertis Economikos
IPC分类号： G03F1/20 , G03F1/72 , G03F9/00
CPC分类号： G03F1/72 , G03F1/20
摘要： A repaired laser ablation mask is disclosed capable of withstanding laser fluences in the range from about 200 mJ/cm.sup.2 to at least 500 mJ/cm.sup.2. The repaired mask comprises a single or multiple layers of apertured metal, such as, aluminum, on a quartz substrate. The laser mask repair technique and structure are also disclosed. The thickness of the metal layer, such as, aluminum layer, is in the range from about 2 microns to about 6 microns. A laser projection etching technique is also disclosed for using the repaired ablation mask.
摘要翻译：所公开的修复的激光烧蚀掩模能够承受在约200mJ / cm 2至至少500mJ / cm 2范围内的激光能量密度。被修复的掩模包括在石英衬底上的单层或多层有孔金属，例如铝。还公开了激光掩模修复技术和结构。金属层（例如铝层）的厚度在约2微米至约6微米的范围内。还公开了使用修复的消融掩模的激光投影蚀刻技术。

44. 发明授权

US5491319A Laser ablation apparatus and method 失效
标题翻译：激光消融装置及方法
公开(公告)号：US5491319A
公开(公告)日：1996-02-13
申请号：US359228
申请日：1994-12-19
申请人： Laertis Economikos , Robert Hannon , Richard P. Surprenant
发明人： Laertis Economikos , Robert Hannon , Richard P. Surprenant
IPC分类号： B23K26/06
CPC分类号： B23K26/066
摘要： A laser ablation apparatus and method removes undesired portions of a workpiece. An industrial laser generates a beam of optical energy and directs the beam at the workpiece. A mechanism in the path of the beam for shapes the cross-section of the beam and includes first and second linear actuators on opposite sides of the beam path. Each of the actuators includes a plurality of linear members, with each linear member being adjacent to and in contact with another linear member, and means for individually inserting and retracting each of said members into and out of said beam path a desired distance to thereby shape the beam so as to ablate only undesired portions of the workpiece.
摘要翻译：激光烧蚀装置和方法去除工件的不期望的部分。工业激光产生光束并将光束引导到工件处。梁的路径中的机构，用于使梁的横截面成形，并且包括在光束路径的相对侧上的第一和第二线性致动器。每个致动器包括多个线性构件，每个线性构件与另一直线构件相邻并与其接触;以及用于将每个所述构件单独地插入和退出所述梁路径并使其离开所需距离的装置，从而形成梁，以便仅烧蚀工件的不期望的部分。

45. 发明授权

US5384953A Structure and a method for repairing electrical lines 失效
标题翻译：电线修复的结构和方法
公开(公告)号：US5384953A
公开(公告)日：1995-01-31
申请号：US94633
申请日：1993-07-21
申请人： Laertis Economikos , Richard P. Surprenant
发明人： Laertis Economikos , Richard P. Surprenant
IPC分类号： H01L23/12 , H01L21/48 , H05K1/09 , H05K3/00 , H05K3/22 , H05K3/02
CPC分类号： H01L21/485 , H05K3/225 , H01L2924/0002 , H05K1/095 , H05K2201/09063 , H05K2201/10234 , H05K2203/0769 , H05K2203/107 , H05K2203/121 , H05K2203/1338 , H05K2203/173 , H05K3/0017 , Y10T29/49155 , Y10T29/49718 , Y10T29/49746
摘要： The present invention relates generally to a new structure and a method for repairing electrical lines, and more particularly, the invention encompasses a structure and a method for repairing electrical lines on a ceramic or a semiconductor substrate. On a substrate that has an open or an electrical discontinuity, one or more trenches or grooves are made next to the open, or discontinuity and using standard deposition process one or more metals are deposited in the open to provide or restore electrical continuity while the excess deposition material is allowed to drain or propagate into the trench.
摘要翻译：本发明一般涉及一种用于修复电线的新结构和方法，更具体地，本发明包括用于修复陶瓷或半导体衬底上的电线的结构和方法。在具有开放或电气不连续性的基板上，在开放或不连续的旁边制造一个或多个沟槽或凹槽，并且使用标准沉积工艺，一个或多个金属沉积在开口中以提供或恢复电连续性，同时过量允许沉积材料排出或传播到沟槽中。

46. 发明授权

US5321886A Applying conductive lines to integrated circuits 失效
公开(公告)号：US5321886A
公开(公告)日：1994-06-21
申请号：US68037
申请日：1993-05-28
申请人： Pedro A. Chalco , Matthew F. Cali , Laertis Economikos , James L. Speidell
发明人： Pedro A. Chalco , Matthew F. Cali , Laertis Economikos , James L. Speidell
IPC分类号： H01L23/12 , G02F1/13 , H01L21/768 , H05K3/00 , H05K3/02 , H05K3/20 , H05K3/22 , H05K3/28 , H05K3/46
CPC分类号： H05K3/225 , H01L21/76886 , G02F1/1309 , H05K2201/0394 , H05K2201/1028 , H05K2203/0769 , H05K2203/107 , H05K2203/173 , H05K3/0017 , H05K3/027 , H05K3/20 , H05K3/28 , Y10T29/49124 , Y10T29/49155 , Y10T29/49742
摘要： A conductive line is applied to a substrate by aligning the conductive line in juxtaposition with a selected area of the substrate; bonding the conductive line to the substrate; and detaching the conductive line from a carrier in which the conductive line is suspended. The carrier has a carrier opening defined by sidewalls, and conductive material is suspended by the sidewalls of the carrier opening so as to be embedded within the carrier opening, and form the conductive line.

47. 发明授权

US08858300B2 Applying different pressures through sub-pad to fixed abrasive CMP pad 有权
标题翻译：通过子垫将不同的压力施加到固定的磨料CMP垫上
公开(公告)号：US08858300B2
公开(公告)日：2014-10-14
申请号：US12702333
申请日：2010-02-09
申请人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
发明人： Glenn L. Cellier , Laertis Economikos , Timothy M. McCormack , Rajasekhar Venigalla
IPC分类号： B24B5/00 , B24B37/00 , B24B37/16 , B24B37/24 , B24B37/22
CPC分类号： B24B37/16 , B24B37/22 , B24B37/245
摘要： A chemical mechanical polishing (CMP) system includes a rotating polishing table including a platen providing at least two pressure zones having different pressures; a sub-pad positioned on the platen, the sub-pad including a plurality of openings allowing for transmission of the different pressures therethrough; a fixed abrasive pad positioned on the sub-pad; and a pressure-creating system sealingly coupled to the platen for creating a different pressure in the at least two pressure zones, wherein the different pressures create topography on the fixed abrasive pad. A sub-pad and related method are also provided.
摘要翻译：化学机械抛光（CMP）系统包括旋转抛光台，其包括提供具有不同压力的至少两个压力区的压板; 位于所述压板上的子垫，所述子垫包括允许通过其传递不同压力的多个开口; 定位在子垫上的固定磨料垫; 以及密封地联接到所述压板的压力产生系统，用于在所述至少两个压力区域中产生不同的压力，其中所述不同压力在所述固定磨料垫上产生形貌。还提供了一个子垫和相关方法。

48. 发明授权

US08792080B2 Method and system to predict lithography focus error using simulated or measured topography 有权
标题翻译：使用模拟或测量地形预测光刻焦点误差的方法和系统
公开(公告)号：US08792080B2
公开(公告)日：2014-07-29
申请号：US13014803
申请日：2011-01-27
申请人： Brian Christopher Sapp , Choongyeun Cho , Lawrence A. Clevenger , Laertis Economikos , Bernhard R. Liegl , Kevin S. Petrarca , Roger Allan Quon
发明人： Brian Christopher Sapp , Choongyeun Cho , Lawrence A. Clevenger , Laertis Economikos , Bernhard R. Liegl , Kevin S. Petrarca , Roger Allan Quon
IPC分类号： G03B27/52 , G03F7/20 , G03F9/00
CPC分类号： G03F7/7065 , G03F7/70066 , G03F7/705 , G03F7/70525 , G03F7/70641 , G03F9/7026 , G06F17/5009 , G06F17/5081
摘要： A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.
摘要翻译：公开了使用芯片形貌数据来预测光刻聚焦误差的方法和系统。可以测量或模拟地形数据的芯片地形数据。平面最适合地形数据，并计算残差。然后，残差用于对聚焦误差进行预测。金属与电介质的密度比也可用作确定预测的聚焦误差的因素。

49. 发明申请

US20130063173A1 METHOD OF REPAIRING PROBE PADS 有权
标题翻译：修复探针垫的方法
公开(公告)号：US20130063173A1
公开(公告)日：2013-03-14
申请号：US13615368
申请日：2012-09-13
申请人： John H. Zhang , Laertis Economikos , Robin Van Den Nieuwenhuizen , Wei-Tsu Tseng
发明人： John H. Zhang , Laertis Economikos , Robin Van Den Nieuwenhuizen , Wei-Tsu Tseng
IPC分类号： G01R1/04
CPC分类号： H01L22/20 , H01L22/14 , H01L24/05 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要： A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.
摘要翻译：一种方法，其包括在衬底上形成第一电平的有源电路，形成电连接到所述第一电平有源电路的第一探针焊盘，其中所述第一探针焊盘具有第一表面，所述第一探针焊盘与所述第一探针焊盘接触，所述第一探针焊盘的位于所述第一表面上方的部分，以及在所述第一探针焊盘上执行化学机械抛光，以在所述第一表面上方平坦化所述第一探针焊盘的所述部分。该方法还包括形成覆盖在第一探针焊盘上的第二电平有源电路，形成电连接到第二电平有源电路的第二探针焊盘，使第二探针焊盘与移位探针焊盘的一部分的探针尖接触，以及化学机械地抛光第二探针垫以除去所移动的部分。

50. 发明授权

US07993498B2 Apparatus and method of electrolytic removal of metals from a wafer surface 有权
标题翻译：从晶片表面电解去除金属的装置和方法
公开(公告)号：US07993498B2
公开(公告)日：2011-08-09
申请号：US11834971
申请日：2007-08-07
申请人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
发明人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
IPC分类号： C25D17/00
CPC分类号： B23H5/08
摘要： An apparatus and method designed to remove metals from a wafer surface using an electrolytic removal process. The apparatus includes a conductive pad having a plurality of alternating cathodes and anodes provided with a power source. The conductive pad is structured and configured to contact all metal islands on a surface of the wafer. Gaps are provided between pairs of the plurality of alternating cathodes and anodes.
摘要翻译：一种设计用于使用电解去除工艺从晶片表面去除金属的设备和方法。该装置包括具有多个具有电源的交替阴极和阳极的导电焊盘。导电焊盘被构造和配置成接触晶片表面上的所有金属岛。在多个交替阴极和阳极的成对之间提供间隙。

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