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41. 发明授权

US07542248B2 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system 失效
公开(公告)号：US07542248B2
公开(公告)日：2009-06-02
申请号：US11984865
申请日：2007-11-23
申请人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda
发明人： Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , G11C11/15
摘要： There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, if a pinned layer and a free layer have a stacked construction of a magnetic layer and a non-magnetic layer or a stacked construction of a magnetic layer and a magnetic layer, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

42. 发明申请

US20090080239A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090080239A1
公开(公告)日：2009-03-26
申请号：US12233121
申请日：2008-09-18
申请人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/706 , G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.
摘要翻译：磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

43. 发明申请

US20090080238A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME 有权
标题翻译：磁性元件和磁阻随机存取存储器
公开(公告)号：US20090080238A1
公开(公告)日：2009-03-26
申请号：US12211388
申请日：2008-09-16
申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/02 , H01L29/82 , G11C11/14 , G11C7/00
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
摘要翻译：本发明提供一种自旋注入型的低电阻磁阻元件。形成促进结晶的结晶促进层与具有非晶结构的界面磁性层接触，从而从隧道势垒层的侧面促进结晶化，并且调整隧道势垒层与界面磁性层之间的界面。通过这种布置，可以形成具有低电阻以获得期望电流值并且具有高TMR比的磁阻元件。

44. 发明申请

US20080131732A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20080131732A1
公开(公告)日：2008-06-05
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko NAKAYAMA , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

45. 发明授权

US07371320B2 Magnetic separation unit and water purification system 有权
标题翻译：磁选机和净水系统
公开(公告)号：US07371320B2
公开(公告)日：2008-05-13
申请号：US11008193
申请日：2004-12-10
申请人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
发明人： Hiroaki Yoda , Satoshi Yumoto , Minoru Morita
IPC分类号： C02F1/48
CPC分类号： C02F1/488 , B03C1/01 , B03C1/032 , B03C1/0337 , B03C1/034 , B03C2201/18 , C02F1/001 , C02F1/5236 , C02F1/56 , C02F1/66 , C02F11/14 , C02F2301/046
摘要： A magnetic separation unit can prevent any magnetic flocs deposited on an inner wall of a water passing pipe from closing a water channel for stabilizing a magnetic separation performance and reduce cost by a small-diameter portion of the water passing pipe. The magnetic separation unit has an air-core solenoid type magnet provided around the water passing pipe guiding, from a lower side, treated water including magnetic flocs in which contaminants and magnetic particles are flocculated, a rotating disc type magnetic filter case provided above the air-core solenoid type magnet for attracting the magnetic flocs in the treated water supplied from the water passing pipe and flushing means for flushing the matrixes to which the magnetic flocs are attracted. The water passing pipe has a small-diameter pipe positioned in the air-core solenoid type magnet, and an enlarged pipe enlarged from the small-diameter pipe toward a water passing part of the rotating disc type magnetic filter case.
摘要翻译：磁分离单元可以防止沉积在水通过管的内壁上的任何磁性絮凝物关闭水通道以稳定磁分离性能，并且通过水通过管的小直径部分降低成本。磁分离单元具有设置在水通过管周围的空心螺线管型磁体，从下侧引导包括污染物和磁性颗粒絮凝的磁性絮凝物的处理水，设置在空气上方的旋转盘型磁性过滤器壳体用于吸引从通水管供给的处理水中的磁絮凝物的芯螺线管型磁体和用于冲洗磁絮凝物所吸收的基体的冲洗装置。通水管具有位于空心螺线管型磁体中的小直径管，并且从小直径管朝向旋转盘型磁性过滤器壳体的水通过部分扩大的管。

46. 发明申请

US20080088980A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20080088980A1
公开(公告)日：2008-04-17
申请号：US11832203
申请日：2007-08-01
申请人： Eiji KITAGAWA , Toshihiko Nagase , Masatoshi Yoshikawa , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
发明人： Eiji KITAGAWA , Toshihiko Nagase , Masatoshi Yoshikawa , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08 , Y10S977/935
摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.
摘要翻译：磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

47. 发明申请

US20080043519A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY HAVING SAID MAGNETIC MEMORY ELEMENT, AND METHOD FOR DRIVING MAGNETIC MEMORY 有权
标题翻译：磁记忆元件，具有磁性记忆元件的磁记忆，以及用于驱动磁记忆的方法
公开(公告)号：US20080043519A1
公开(公告)日：2008-02-21
申请号：US11829408
申请日：2007-07-27
申请人： Eiji KITAGAWA , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Eiji KITAGAWA , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.
摘要翻译：当执行读取时，可以防止无意写入。用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

48. 发明授权

US07266011B2 Magneto-resistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07266011B2
公开(公告)日：2007-09-04
申请号：US11368496
申请日：2006-03-07
申请人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.
摘要翻译：磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

49. 发明申请

US20070116558A1 Pressure test method of double suction volute pump 有权
标题翻译：双吸涡旋泵的压力试验方法
公开(公告)号：US20070116558A1
公开(公告)日：2007-05-24
申请号：US11599488
申请日：2006-11-15
申请人： Tomohiro Naruse , Hideki Akiniwa , Hiroaki Yoda , Minoru Hiroshima
发明人： Tomohiro Naruse , Hideki Akiniwa , Hiroaki Yoda , Minoru Hiroshima
IPC分类号： F04D29/44
CPC分类号： F04D1/006 , F04D15/0088 , F04D29/167
摘要： According to the present invention, along the right and left sides of a rotary shaft, flat faces that serve as sealing faces are formed at the circumferential edges, on the suction chamber side, of semicircular division plates, which define suction chambers and a discharge chamber of a volute casing that is divided into two segments. Two disc plates are prepared as pressure test tools, and are positioned on the right and left sides of the rotary shaft so that they contact the flat faces that are formed around the circumferential edges of the division plates near the suction chambers. The two disc plates are then securely connected to a member in the axial direction. In addition, a bolt fastening structure, which is axially tightened by the member that connects the disc plates axially, is provided in at least one axial direction.
摘要翻译：根据本发明，沿着旋转轴的左右两侧，形成有作为密封面的平面形成在半圆形分隔板的吸入室侧的周缘部，形成吸入室和排出室的蜗壳，分为两段。制备两个盘片作为压力测试工具，并且位于旋转轴的左侧和右侧，使得它们接触形成在吸附室附近的分隔板周边的平面。然后，两个盘片在轴向上牢固地连接到构件。此外，在至少一个轴向方向上设置有由轴向连接盘片的构件轴向紧固的螺栓紧固结构。

50. 发明授权

US07145796B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07145796B2
公开(公告)日：2006-12-05
申请号：US10933323
申请日：2004-09-03
申请人： Yoshiaki Fukuzumi , Hiroaki Yoda
发明人： Yoshiaki Fukuzumi , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/228
摘要： A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.
摘要翻译：半导体集成电路器件包括磁阻效应元件和插头。磁阻效应元件包括其磁化方向固定的第一磁性层和其磁化方向可改变的第二磁性层。插塞形成为在第二磁性层的膜厚度方向上穿过第二磁性层，并用于向第二磁性层施加写入磁场。

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