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    • 41. 发明授权
    • Heat treatment method for a silicon monocrystal wafer and a silicon monocrystal wafer
    • 硅单晶晶片和硅单晶晶片的热处理方法
    • US06551398B2
    • 2003-04-22
    • US09213017
    • 1998-12-16
    • Takao AbeNorihiro KobayashiMasahiro Kato
    • Takao AbeNorihiro KobayashiMasahiro Kato
    • H01L21324
    • C30B29/06C30B33/00H01L21/3225
    • There is disclosed a heat treatment method for a silicon monocrystal wafer comprising the steps of heat-treating in a reducing atmosphere a silicon monocrystal wafer manufactured by growing a silicon monocrystal ingot by Czochralski method wherein a wafer obtained from a silicon monocrystal ingot having oxygen concentration of 16 ppma or less which is manufactured by pulling at a growth rate of 0.6 mm/min or more, and in which COPs exist in high density is subjected to anneal heat treatment at 1200° C. or above for one second or more through use of a rapid heating/rapid cooling apparatus, or at 1200° C. or above for 30 minutes or more through use of a batchwise heat treatment furnace, and no defect silicon monocrystal wafer obtained with the method. There can be manufactured a silicon monocrystal wafer in which crystal defects existing on the surface of the wafer or at the surface layer portion thereof are minimized, and there can be provided a silicon monocrystal wafer for a device which is excellent in electric characteristics such as oxide dielectric breakdown voltage and electrical reliability.
    • 公开了一种用于硅单晶晶片的热处理方法,包括以下步骤:在还原性气氛中通过采用Czochralski法生长硅单晶锭制造的硅单晶晶片进行热处理,其中从具有氧浓度的硅单晶锭获得的晶片 通过以0.6mm / min以上的生长速度拉伸制造的16ppma以下,其中以高密度存在COP,在1200℃以上进行退火热处理1秒以上,通过使用 快速加热/快速冷却装置,或者通过使用间歇式热处理炉在1200℃以上30分钟以上,并且没有利用该方法获得的缺陷硅单晶晶片。 可以制造其中存在于晶片表面或其表层部分处的晶体缺陷最小化的硅单晶晶片,并且可以提供具有优异电特性的器件的硅单晶晶片,例如氧化物 介电击穿电压和电气可靠性。
    • 45. 发明授权
    • Polygon scanner and production process thereof
    • 多边形扫描仪及其生产工艺
    • US5574591A
    • 1996-11-12
    • US383929
    • 1995-02-06
    • Mitsuo SuzukiYukio ItamiYoshio HashimotoKoji TsukaharaYoshihiro TakahashiTakao Abe
    • Mitsuo SuzukiYukio ItamiYoshio HashimotoKoji TsukaharaYoshihiro TakahashiTakao Abe
    • F16C17/02F16C33/10G02B7/182G02B26/12H02K5/16H02K7/09H02K21/24H02K29/06G02B26/08
    • F16C33/107F16C17/026G02B26/121G02B7/1821H02K21/24H02K29/06H02K5/1677H02K7/09Y10S359/90
    • A polygon scanner has a lighter rotating shaft on which a polygon mirror is mounted, to prevent a positional deviation of the polygon mirror from the rotating shaft in high speed rotation, in which the rotating shaft is supported through a dynamic pressure air bearing on a fixed shaft, in which the polygon mirror and motor constituent members are mounted on the rotating shaft, and in which the rotating shaft and the polygon mirror are made of respective light weight materials matched with each other in coefficient of thermal expansion, for example of aluminum or an aluminum alloy. Further, an anodic oxide film is formed at least on a portion where the rotating shaft could contact with the fixed shaft, and floating means is provided for constantly floating the rotating shaft relative to the fixed shaft upward in an axial direction thereof. A process for producing the polygon scanner comprises making a predetermined masking on a portion where the rotating shaft could contact with the fixed shaft, prior to an anodic oxidation treatment to form an anodic oxide film on the portion, and then performing the anodic oxidation treatment, whereby, during the treatment, forming an anodic oxide film and a pattern of recesses and protrusions for dynamic pressure generation corresponding to a pattern of the masking, which are constituent elements of a dynamic pressure air bearing.
    • 多边形扫描器具有安装有多面镜的较轻的旋转轴,以防止多角镜从高速旋转中的旋转轴的位置偏离,其中旋转轴通过动态压力空气轴承支撑在固定的 轴,其中多面镜和电动机构成部件安装在旋转轴上,并且其中旋转轴和多面镜由相对于热膨胀系数彼此匹配的各种重量轻的材料制成,例如铝或 铝合金。 此外,至少在旋转轴可以与固定轴接触的部分上形成阳极氧化膜,并且设置有浮动装置,用于使旋转轴相对于固定轴在轴向上向上上升。 多边形扫描仪的制造方法,在阳极氧化处理之前,在旋转轴可以与固定轴接触的部分上进行规定的掩模,在该部分上形成阳极氧化膜,然后进行阳极氧化处理, 由此,在处理过程中,形成阳极氧化膜和用于动压产生的凹凸图案,其对应于作为动压空气轴承的组成元件的掩模图案。