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    • 41. 发明申请
    • Shielded, asymmetric magnets for use in magnetic resonance imaging
    • 用于磁共振成像的屏蔽非对称磁体
    • US20060255805A1
    • 2006-11-16
    • US11390913
    • 2006-03-28
    • Stuart CrozierFeng Liu
    • Stuart CrozierFeng Liu
    • G01V3/00
    • G01R33/3815G01R33/381G01R33/421
    • Magnetic resonance systems are provided which employ a shielded, asymmetric magnet to produce an offset dsv. The magnets include at least a first coil C1, which carries current in a first direction, and two coils C2 and C3, which are located at least in part within the internal envelope EC1 defined by the first coil and which carry current in an opposite direction to the first coil. The magnets are shielded by a shielding coil C4, which carries current in a direction opposite to that of the first coil, and/or a ferromagnetic structure (FS). The magnets can include additional coils, such as a fifth coil C5 at the magnet's distal end. The magnets can be used in, for example, orthopedic imaging.
    • 提供了使用屏蔽的不对称磁体产生偏移dsv的磁共振系统。 磁体包括至少第一线圈C 1,其沿第一方向承载电流,以及两个线圈C 2和C 3 3,其中 至少部分地位于由第一线圈限定的内部包络E C1 C1中,并且沿与第一线圈相反的方向承载电流。 这些磁体由与第一线圈相反的方向的电流和/或铁磁结构(FS)的屏蔽线圈C 4屏蔽。 磁体可以包括附加的线圈,例如磁体远端处的第五线圈C 5。 磁体可用于例如矫形成像。
    • 47. 发明申请
    • Resilient application layer overlay framework for converged communication over internet protocol networks
    • 用于通过互联网协议网络进行融合通信的弹性应用层覆盖框架
    • US20050198320A1
    • 2005-09-08
    • US10953033
    • 2004-09-29
    • Wu ChouFeng Liu
    • Wu ChouFeng Liu
    • G06F15/16
    • H04L65/1006H04L67/02H04L69/30
    • Methods and apparatus for providing converged communication services in a communication system are disclosed. A first endpoint of the system communicates with at least a second endpoint of the system via session initiation protocol (SIP). At least a portion of the SIP communication is controlled utilizing an application layer overlay framework which permits substantially simultaneous operation of the first endpoint in two application layer protocols, the two application layer protocols including SIP and web services protocol. The web services protocol may illustratively comprise an application layer web services transport protocol such as SOAP/HTTP. The application overlay framework comprises a web services interface, with the web services interface being configured to permit access to information associated with the SIP communication by one or more communication service applications of the system.
    • 公开了在通信系统中提供融合通信业务的方法和装置。 系统的第一端点经由会话发起协议(SIP)与系统的至少第二端点通信。 使用应用层覆盖框架控制SIP通信的至少一部分,其允许在两个应用层协议中实现第一端点的基本上同时的操作,所述两个应用层协议包括SIP和web服务协议。 web服务协议可以说明性地包括诸如SOAP / HTTP的应用层web服务传输协议。 应用覆盖框架包括Web服务接口,其中web服务接口被配置为允许通过系统的一个或多个通信服务应用访问与SIP通信相关联的信息。
    • 49. 发明授权
    • Chemical mechanical planarization of low dielectric constant materials
    • 低介电常数材料的化学机械平面化
    • US06736992B2
    • 2004-05-18
    • US10145649
    • 2002-05-14
    • Fan ZhangFeng LiuDan Towery
    • Fan ZhangFeng LiuDan Towery
    • C09K1300
    • C09K3/1472C09G1/02C09K3/1436C09K3/1463H01L21/31053H01L21/31058
    • The present invention relates to apparatus, procedures and compositions for avoiding and reducing damage to low dielectric constant materials and other soft materials, such as Cu and Al, used in fabricating semiconductor devices. Damage reduction can be achieved by decreasing the role of mechanical abrasion in the CMP of these materials and increasing the role of chemical polishing, which can also improve material removal rates. Increasing the role of chemical polishing can be accomplished by creating a polishing slurry, which contains components that interact chemically with the surface to be polished. This slurry may or may not also contain soft abrasive particles, which replace the hard abrasive particles of conventional slurries. Use of soft abrasive particles can reduce the role of mechanical abrasion in the CMP process. Use of this slurry in CMP can reduce surface scratches and device damage.
    • 本发明涉及用于避免和减少用于制造半导体器件的低介电常数材料和其它软材料(例如Cu和Al)的损伤的装置,程序和组合物。 通过减少这些材料的CMP中的机械磨损的作用并增加化学抛光的作用可以减少损伤,这也可以提高材料去除率。 增加化学抛光的作用可以通过产生抛光浆料来实现,抛光浆料含有与待抛光表面化学反应的组分。 该浆料可以含有也可以不含有软磨粒,其代替常规浆料的硬磨粒。 使用软磨粒可以减少CMP工艺中机械磨损的作用。 在CMP中使用这种浆料可以减少表面划痕和器件损坏。