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41. 发明专利

JP2009290113A Semiconductor device and manufacturing method thereof, sensor, and electro-optic device 有权
标题翻译：半导体器件及其制造方法，传感器和电光器件
公开(公告)号：JP2009290113A
公开(公告)日：2009-12-10
申请号：JP2008143255
申请日：2008-05-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/288 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L51/50
CPC分类号： H01L21/28194 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To increase the resistance of only a channel region of an inorganic semiconductor film formed in a low resistance state after forming the inorganic semiconductor film, in a method of manufacturing a semiconductor device. SOLUTION: On a substrate 10, a gate electrode 20, a gate insulation film 30, and an inorganic oxide film 40 are formed in order. Then, a source electrode 62 and a drain electrode 63 are so formed as to cover part of the inorganic oxide film 40. Carrier density in a portion of a region of the inorganic oxide film 40 not covered by the electrodes which is used as a channel region 44 of the semiconductor device is reduced by oxidation treatment. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在半导体器件的制造方法中，为了增加在形成无机半导体膜之后在低电阻状态下形成的无机半导体膜的沟道区域的电阻。解决方案：在基板10上依次形成栅极电极20，栅极绝缘膜30和无机氧化物膜40。然后，源电极62和漏极63形成为覆盖无机氧化物膜40的一部分。无机氧化物膜40的未被被用作沟道的电极覆盖的区域的一部分中的载流子密度通过氧化处理来减少半导体器件的区域44。版权所有（C）2010，JPO＆INPIT

42. 发明专利

JP2009290111A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2009290111A
公开(公告)日：2009-12-10
申请号：JP2008143253
申请日：2008-05-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI , NANGU MAKI
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L21/268 , H01L21/02554 , H01L21/02664 , H01L21/02686 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To improve a characteristic of a semiconductor device by using a low-temperature process, in a semiconductor device using a ZnO film for an active layer. SOLUTION: In an active layer formation process of the semiconductor device using a ZnO film 40 for an active layer, laser annealing L1 is executed to the ZnO film 40 by a pulse laser of ultraviolet light to reduce resistance thereof, and a specific resistance value of a channel part of the ZnO film 40 excessively reduced in resistance then is increased to a value ≥10 3 Ω cm by an oxidation treatment. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过使用低温处理来提高半导体器件的特性，在使用用于有源层的ZnO膜的半导体器件中。解决方案：在使用用于有源层的ZnO膜40的半导体器件的有源层形成工艺中，通过紫外光的脉冲激光对ZnO膜40执行激光退火L1以降低其电阻，并且具体然后通过氧化处理将电阻过度降低的ZnO膜40的通道部分的电阻值增加到≥10 3 <Ω>Ωcm的值。版权所有（C）2010，JPO＆INPIT

43. 发明专利

JP2009224737A Insulating film formed of metal oxide mainly containing gallium oxide, and manufacturing method thereof 审中-公开
标题翻译：主要含有氧化铝的金属氧化物的绝缘膜及其制造方法
公开(公告)号：JP2009224737A
公开(公告)日：2009-10-01
申请号：JP2008070670
申请日：2008-03-19
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： H01L21/316 , C09D5/25 , C09D185/00 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To form an insulating film formed of metal oxide mainly containing oxide gallium of good quality at low temperatures on a substrate with low heat resistance.
SOLUTION: A solution containing a gallium alkoxide compound is applied to the substrate 2 to form a film of the gallium alkoxide compound. Energy 3 necessary to dissolve an organic substance contained in the film is provided to the film, and the film is changed into a metal oxide film 4 mainly containing the gallium oxide.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：在低耐热性的基板上，在低温下形成由主要含有质量好的氧化镓的金属氧化物形成的绝缘膜。解决方案：将含有烷氧基铝化合物的溶液施加到基材2上以形成烷氧基铝化合物的膜。提供了将膜中含有的有机物质溶解所需的能量3，将膜变成主要含有氧化镓的金属氧化物膜4。版权所有（C）2010，JPO＆INPIT

44. 发明专利

JP2009033003A Thin-film element and its manufacturing method, and semiconductor device 审中-公开
标题翻译：薄膜元件及其制造方法和半导体器件
公开(公告)号：JP2009033003A
公开(公告)日：2009-02-12
申请号：JP2007197000
申请日：2007-07-30
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , AZUMA KOHEI , UMEDA KENICHI , SUNAKAWA HIROSHI , KODA KATSUHIRO
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/20 , H01L21/288 , H01L21/3205 , H01L29/786
CPC分类号： H01L29/78603 , H01L29/66757 , Y10T428/24802
摘要： PROBLEM TO BE SOLVED: To expand material selectivity while manufacturing a thin-film element provided with a good-quality inorganic film without damaging a resin substrate by using a direct writing technology in a method of manufacturing a thin-film-element. SOLUTION: A thin-film element 1 is manufactured by executing the following steps: a step (A) for preparing a substrate 10; a step (B) for forming a thermal buffer layer 50 on the substrate 10; a step (D) for forming a film 30a to be annealed, which is made of a non-single crystal film, into a pattern shape on the substrate 10 provided with the thermal buffer layer 50; and a step (E) for forming an inorganic film 30 by annealing the film 30a to be annealed while using short-wavelength light L. There is provided a step (C) between the step (B) and the step (D). In the step (C), a light-cutting layer 20 for preventing the substrate 10 from being damaged by the short-wavelength light L while reducing an arrival rate of the short-wavelength light L at the substrate 10 is formed at least at a non-patterned part 10r where the film 30a to be annealed is not formed on the substrate 10 provided with the thermal buffer layer 50. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在制造具有优质无机膜的薄膜元件的同时，通过在薄膜元件的制造方法中使用直接写入技术不破坏树脂基板来扩大材料选择性。解决方案：通过执行以下步骤制造薄膜元件1.用于制备基板10的步骤（A）; 用于在衬底10上形成热缓冲层50的步骤（B）; 在由设置有热缓冲层50的基板10上形成图案形状的由非单晶膜构成的退火膜30a的工序（D）以及用于通过使使用短波长光L退火的退火薄膜30a来形成无机膜30的步骤（E）。提供了步骤（B）和步骤（D）之间的步骤（C）。在步骤（C）中，至少形成有用于防止基板10被短波长光L损坏同时降低基板10处的短波长光L的到达速率的光切割层20 未图案化部分10r，其中在被设置有热缓冲层50的基板10上未形成待退火的膜30a。（C）2009年，JPO和INPIT

45. 发明专利

JP2009005082A Imaging element and imaging apparatus 审中-公开
标题翻译：成像元件和成像设备
公开(公告)号：JP2009005082A
公开(公告)日：2009-01-08
申请号：JP2007163993
申请日：2007-06-21
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： HAYASHI MASAYUKI , TAKADA SHUNJI , OZEKI KATSUHISA , TANAKA ATSUSHI , NOMURA KIMIATSU , NAKAYAMA MASAYA , FUJIMOTO KIYOSHI
IPC分类号： H04N5/33 , G02F1/13 , H01L31/10 , H01L31/12 , H04N5/335 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To provide a sheet-like imaging element which has a light emitting area and a light receiving area mixed, and is optimal for medical use.
SOLUTION: The present invention relates to a sheet-like imaging element 2 having a light emitting area 2b and a light receiving area 2a mixed in a plane view, and comprising: a sheet-like translucent substrate 23, a photoelectric converting element 25 formed in the light receiving area 2a above a front side of the translucent substrate 23; a translucent part 24 through which light is transmitted, formed in the light emitting area 2b above the front side of the translucent substrate 23; and a light emitting sheet 22 for making light incident from a rear side of the translucent substrate 23 through the translucent substrate 23 to the translucent part 24, wherein the translucent substrate 23 is adapted to transmit infrared light therethrough, the photoelectric converting element 25 is adapted to detect infrared light, the translucent part 23 is adapted to transmit infrared light therethrough, and the light emitting sheet 22 is adapted to make infrared light incident to the translucent part 24.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供混合有发光区域和受光面积的片状摄像元件，是医疗用途最佳的片状摄像元件。解决方案：本发明涉及一种具有在平面图中混合的发光区域2b和光接收区域2a的片状成像元件2，包括：片状半透明基板23，光电转换元件 25形成在透光性基板23的前侧上方的受光部2a中; 在透光性基板23的前侧上方的发光区域2b中形成有透光的透光部24; 以及发光片22，用于使从透光性基板23的背面入射到透光性基板23的光透过部24，其中透光性基板23适于透过红外光，光电转换元件25适于为了检测红外光，半透明部分23适于透过红外光，并且发光片22适于使红外光入射到半透明部分24.版权所有（C）2009，JPO＆INPIT

46. 发明专利

JP2008091512A Laser annealing technique, semiconductor film, semiconductor device, and electrooptical device 有权
标题翻译：激光退火技术，半导体膜，半导体器件和电子器件
公开(公告)号：JP2008091512A
公开(公告)日：2008-04-17
申请号：JP2006269032
申请日：2006-09-29
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： KURAMACHI TERUHIKO , SUNAKAWA HIROSHI , HIIRO HIROYUKI , TANAKA ATSUSHI
IPC分类号： H01L21/268 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a laser annealing technique that can highly crystallize the entire surface of an amorphous semiconductor film, hardly has granular crystal sections on nearly the entire surface of the amorphous semiconductor film, and can form a lateral crystal film without any joints, to provide a semiconductor film that has high crystallinity and is ideal as an active layer, or the like of a thin-film transistor (TFT) by using the technique, and to provide a semiconductor device, such as the TFT using the semiconductor film, and an electrooptical device. SOLUTION: Laser annealing is executed under conditions where a granular crystal part and an amorphous part are melted and a lateral crystal part is not melted. Further, laser annealing is executed by changing laser beam irradiation time in the granular crystal part from that in the amorphous part so that ¾EA-EP¾ COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以使非晶半导体膜的整个表面高度结晶的激光退火技术，在非晶半导体膜的几乎整个表面上几乎不具有粒状晶体区域，并且可以形成横向晶体膜没有任何接头，通过使用该技术提供具有高结晶度并且是薄膜晶体管（TFT）的有源层等的理想的半导体膜，并且提供半导体器件，例如使用半导体膜和电光装置。解决方案：激光退火在晶粒部分和非晶部分熔化并且横向晶体部分不熔化的条件下进行。此外，通过将粒状晶体部分中的激光束照射时间从非晶部分中的激光束照射时间改变，使得满足每个单位面积的吸收光能量，从而满足¾EA-EP¾<¾EA-EPs¾...（1）来执行激光退火在非晶部分的激光束的激光束是在与非晶部分相同的激光束照射条件下施加激光束时，颗粒状晶体部分处的激光束的每单位面积的吸收光能量，EP是实际的吸收光能量在颗粒状晶体部分的每单位激光束面积。版权所有（C）2008，JPO＆INPIT

47. 发明专利

JP2008071788A Laser annealing apparatus, semiconductor film substrate, element substrate and electrooptical apparatus 有权
标题翻译：激光退火设备，半导体膜基板，元件基板和电子设备
公开(公告)号：JP2008071788A
公开(公告)日：2008-03-27
申请号：JP2006246545
申请日：2006-09-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , KURAMACHI TERUHIKO
IPC分类号： H01L21/268 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To selectively and efficiently execute dehydrogenation processing and crystallization processing for a predetermined region of a hydrogenated amorphous semiconductor film. SOLUTION: A laser annealing apparatus 100 is provided with one or more laser oscillation sources, a first laser source 120 for irradiating a hydrogenated amorphous semiconductor film 20 with a first laser beam X to reduce hydrogen concentration of a region irradiated with the first laser beam X, and one or more laser oscillation sources not serving as the laser oscillation source of the first laser source 120. The apparatus 100 is provided with a second laser source 130 for irradiating at least one part of the region of the semiconductor film 20 irradiated with the first laser beam X with a second laser beam Y to crystallize the region irradiated with the second laser beam Y; and a relative scanning means 150 for relatively scanning the first and second laser beams X and Y simultaneously or independently for the semiconductor film 20. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：选择性地和有效地对氢化非晶半导体膜的预定区域进行脱氢处理和结晶处理。激光退火装置100设置有一个或多个激光振荡源，第一激光源120，用于用第一激光束X照射氢化非晶半导体膜20，以减少被第一激光束照射的区域的氢浓度激光束X以及不用作第一激光源120的激光振荡源的一个或多个激光振荡源。设备100设置有用于照射半导体膜20的至少一部分区域的第二激光源130 用第二激光束Y用第一激光束X照射以使被第二激光束Y照射的区域结晶化; 以及用于同时或独立地为半导体膜20相对扫描第一和第二激光束X和Y的相对扫描装置150.版权所有（C）2008，JPO＆INPIT

48. 发明专利

JP2012059860A Thin film transistor and method of manufacturing the same, and device with thin film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及具有薄膜晶体管的器件
公开(公告)号：JP2012059860A
公开(公告)日：2012-03-22
申请号：JP2010200570
申请日：2010-09-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , H01L27/14 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured at low temperature and exhibits high electron field-effect mobility.SOLUTION: In the thin film transistor having an active layer which comprises an oxide semiconductor layer, the active layer includes a first area Ahaving a first electron affinity χin the film thickness direction from the gate electrode side, and a second area Ahaving a second electron affinity χsmaller than the first electron affinity χ. A well type potential where the first area Ais a well layer, and the second area Aand a gate insulating film are a barrier layer is constituted. Here, the active layer comprises the oxide semiconductor layer consisting of a(InO).b(GaO).c(ZnO), and b/(a+b) of the second area Ais larger than b/(a+b) of the first area A.
摘要翻译：解决的问题：提供可以在低温下制造并具有高电子场效应迁移率的薄膜晶体管。解决方案：在具有包括氧化物半导体层的有源层的薄膜晶体管中，有源层包括具有第一电子亲和力χ 1 具有第二电子密度χ 2 “POST”> 2 小于第一电子亲和力χ 1 。第一区域A 1 的井型电位是阱层，第二区域A 2 和栅极绝缘膜是构成阻挡层。这里，有源层包括由（In 2 O 3 ）组成的氧化物半导体层b（Ga 2 O 3 ）c（ZnO）和b /（a + b） “> 2 大于第一区域A 1 的b /（a + b）。版权所有（C）2012，JPO＆INPIT

49. 发明专利

JP2010165999A Method for manufacturing thin film transistor and method for manufacturing electro-optical device 有权
标题翻译：制造薄膜晶体管的方法和制造电光器件的方法
公开(公告)号：JP2010165999A
公开(公告)日：2010-07-29
申请号：JP2009009196
申请日：2009-01-19
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TANAKA ATSUSHI , UMEDA KENICHI , MOCHIZUKI FUMIHIKO
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor, wherein an In-Ga-Zn-O group homologous oxide semiconductor is used as an active layer, damage in the active layer is suppressed without forming an etching stopper layer, and resistance of source-drain electrodes can be reduced; and to provide a method for manufacturing an electro-optical device.
SOLUTION: The method for manufacturing the thin film transistor includes: a step of forming an oxide semiconductor film 16 containing In, Ga and Zn; a step of patterning the oxide semiconductor film as an active layer 18; a step of performing heat treatment of the oxide semiconductor film 16 at 500°C and higher; a step of forming a metal film, thereby covering the active layer obtained by patterning the oxide semiconductor film and performing heat treatment; and a step of forming at least one of a source electrode 20A and a drain electrode 20B in contact with the active layer by patterning the metal film by etching.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供使用In-Ga-Zn-O族同源氧化物半导体作为有源层的薄膜晶体管的制造方法，抑制有源层的损伤而不形成蚀刻阻止层，并且可以减少源 - 漏电极的电阻; 并提供一种制造电光装置的方法。解决方案：制造薄膜晶体管的方法包括：形成含有In，Ga和Zn的氧化物半导体膜16的步骤; 图案化氧化物半导体膜作为有源层18的步骤; 在500℃以上进行氧化物半导体膜16的热处理的工序; 形成金属膜的步骤，从而覆盖通过图案化氧化物半导体膜获得的有源层并进行热处理; 以及通过蚀刻图案化金属膜来形成与有源层接触的源极电极20A和漏极电极20B中的至少一个的步骤。版权所有（C）2010，JPO＆INPIT

50. 发明专利

JP2009252821A Inorganic film, manufacturing method therefor, and semiconductor device 有权
标题翻译：无机膜，其制造方法和半导体器件
公开(公告)号：JP2009252821A
公开(公告)日：2009-10-29
申请号：JP2008096030
申请日：2008-04-02
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NANGU MAKI , UMEDA KENICHI , TANAKA ATSUSHI , AZUMA KOHEI
IPC分类号： H01L29/24 , C01G23/00 , C01G39/00 , C01G41/00 , H01L21/20 , H01L21/336 , H01L29/26 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an inorganic film with good quality, having a specific resistance that is suitable for driving a transistor.
SOLUTION: The inorganic film expressed by general formula N
a M
b Q
c O
d (where N refers to Zn or Mg, M refers to Ti, W or Mo, Q refers to In or Fe, and a, b, c and d are positive real numbers) is prepared, by applying a material liquid containing at least one of a N oxide, alkoxide and an organic metal compound, at least one of a M oxide, alkoxide and an organic metal compound, at least one of a Q oxide, alkoxide and an organic metal compound, and an organic solvent on a substrate for forming the film and thermally treating it.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有适合于驱动晶体管的电阻率的高质量的无机膜。
解决方案：由通式N表示的无机膜 N是指Zn或Mg，M是指Ti，W或Mo，Q是指In或Fe，a，b，c和d是正实数），通过涂布含有至少一种 N氧化物，醇盐和有机金属化合物，M氧化物，醇盐和有机金属化合物中的至少一种，Q氧化物，醇盐和有机金属化合物中的至少一种，以及用于形成薄膜和热处理。版权所有（C）2010，JPO＆INPIT

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