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1. 发明专利

JP2015018896A 金属酸化物薄膜及びその製造方法、並びにその製造方法に用いる金属酸化物薄膜形成用塗布溶液有权
标题翻译：金属氧化物薄膜及其生产方法，以及用于形成用于生产方法的金属氧化物薄膜的涂层溶液
公开(公告)号：JP2015018896A
公开(公告)日：2015-01-29
申请号：JP2013144296
申请日：2013-07-10
申请人：富士フイルム株式会社 , Fujifilm Corp
发明人： TAKADA MASAHIRO , KIKUCHI MAKOTO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50
CPC分类号： H01L21/02565 , G02F2001/13685 , H01L21/02554 , H01L21/02628 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869
摘要：【課題】大気圧下において、低温且つ容易に製造可能な緻密な金属酸化物薄膜、及びその製造方法、並びにその製造方法に用いる塗布溶液を提供する。【解決手段】本発明の金属酸化物薄膜は、X線光電子分光分析によって得られるXPSスペクトルにおいて、結合エネルギーが402eV以上405eV以下の範囲に窒素の1s電子に帰属するピークを有し、且つ、酸素の1s電子に帰属する金属-酸素結合のピークエネルギーのピーク面積をピーク分離によって求めた時に下記式(1)を満足する。0.9
摘要翻译：要解决的问题：提供在大气压下在低温下容易制造的致密金属氧化物薄膜，并提供其制备方法和用于制备方法的涂布溶液。解决方案：金属氧化物薄膜由X射线光电子能谱得到的XPS光谱中，具有归属于具有402-405eV范围内的键能的氮的1s电子的高分子峰，并且当金属 - 氧键的峰值能量的峰面积归因于通过峰分离获得氧的1s电子，满足下式（1）。 0.9

2. 发明专利

JP2013041944A Thin film transistor, manufacturing method of the same, display device, image sensor, x-ray sensor and x-ray digital imaging equipment 有权
标题翻译：薄膜晶体管，其制造方法，显示器件，图像传感器，X射线传感器和X射线数字成像设备
公开(公告)号：JP2013041944A
公开(公告)日：2013-02-28
申请号：JP2011177234
申请日：2011-08-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , SUZUKI MASAYUKI , TANAKA ATSUSHI
IPC分类号： H01L29/786 , C23C14/08 , C23C14/34 , C23C14/58 , G02F1/1368 , H01L21/363 , H01L27/144 , H01L27/146
CPC分类号： H01L29/7869 , C23C14/08 , C23C14/086 , C23C14/3464 , G02F1/1368 , G02F2001/13685 , H01L21/02381 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/14658 , H01L27/3262
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor which can be formed at 400°C and under, and supports high field effect mobility of 30 cm/Vs and over and low off-current causing normally-off at the same time.SOLUTION: A thin film transistor 1 comprises: a gate electrode 16; a gate insulation film 15 contacting the gate electrode; an oxide semiconductor layer 12 including a first region A1 represented as In(x)Zn(1-x)O(y) (0.4≤x≤0.5,y>0), and a second region A2 represented as In(a)Ga(b)Zn(c)O(d) (b/(a+b)>0.250, c>0, d>0) and located farther than the first region with respect to the gate electrode, and arranged opposed to the gate electrode via the gate insulation film; and a source electrode 13 and a drain electrode 14 arranged at a distance from each other and capable of being conducted via the oxide semiconductor layer.
摘要翻译：解决的问题：为了提供可以在400℃以下形成的薄膜晶体管，并且支持30cm×SP POS =“POST”> 2 / Vs的高场效应迁移率，过电流和低电流同时导致正常关断。解决方案：薄膜晶体管1包括：栅电极16; 与栅电极接触的栅极绝缘膜15; 包含以In（x）Zn（1-x）O（y）（0.4≤x≤0.5，y> 0）表示的第一区域A1的氧化物半导体层12和以In（a）Ga表示的第二区域A2 （b）Zn（c）O（d）（b /（a + b）> 0.250，c> 0，d> 0），并且相对于栅电极位于比第一区更远的位置，电极通过栅极绝缘膜; 以及源极电极13和漏极电极14，其彼此间隔一定距离并且能够经由氧化物半导体层传导。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013030681A Method of manufacturing semiconductor element, and method of manufacturing field-effect transistor 有权
标题翻译：制造半导体元件的方法和制造场效应晶体管的方法
公开(公告)号：JP2013030681A
公开(公告)日：2013-02-07
申请号：JP2011167092
申请日：2011-07-29
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MOCHIZUKI FUMIHIKO , TAKADA MASAHIRO , ONO MASASHI , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/316 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L27/14614 , H01L27/14632 , H01L27/14659 , H01L27/14687 , H01L27/148 , H01L27/3262 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To stabilize element characteristics during light irradiation.SOLUTION: The method includes: a first step of depositing a semiconductor film containing an oxide semiconductor as a main body; a second step of depositing a first insulating film on a surface of the semiconductor film after the first step; a third step of performing heat treatment under an oxidizing atmosphere after the second step; and a fourth step of depositing a second insulating film on a surface of the first insulating film after the third step. At the second and third steps, when a thickness of the first insulating film is defined as Z (nm), a heat treatment temperature at the third step is defined as T(°C) and a diffusion distance of oxygen into the first insulating film and the semiconductor film is defined as L (nm), the thickness of the first insulating film and the heat treatment temperature are adjusted so as to satisfy the relational expression: 0
摘要翻译：要解决的问题：在光照射期间稳定元件特性。解决方案：该方法包括：沉积包含氧化物半导体作为主体的半导体膜的第一步骤; 在第一步骤之后在半导体膜的表面上沉积第一绝缘膜的第二步骤; 在第二步骤之后在氧化气氛下进行热处理的第三步骤; 以及在第三步骤之后在第一绝缘膜的表面上沉积第二绝缘膜的第四步骤。在第二和第三步骤中，当将第一绝缘膜的厚度定义为Z（nm）时，将第三步骤的热处理温度定义为T（℃）和氧向第一绝缘膜的扩散距离并且将半导体膜定义为L（nm），调整第一绝缘膜的厚度和热处理温度以满足关系式：0 -6 ×T 3 -0.0092×T 2 + 3.6×T-468±0.1。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011243745A Method of manufacturing thin film transistor, thin film transistor, image sensor, x-ray sensor, and x-ray digital photographing device 有权
标题翻译：制造薄膜晶体管，薄膜晶体管，图像传感器，X射线传感器和X射线数字摄影装置的方法
公开(公告)号：JP2011243745A
公开(公告)日：2011-12-01
申请号：JP2010114674
申请日：2010-05-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKADA MASAHIRO , ONO MASASHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , H01L21/336 , H01L27/14 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor that suppresses variance in electric characteristics as a result of a heat treatment when the thin film transistor having an oxide semiconductor layer is manufactured, and is suitable for, especially, fabrication of a large-area device.SOLUTION: The method of manufacturing the thin film transistor which has, on a substrate 11, the oxide semiconductor layer 12, a source electrode 13, a drain electrode 14, a gate insulating film 15, and a gate electrode includes a process of forming the oxide semiconductor layer that has a laminate structure of three or more layers, adjacent ones of which differ in composition, and includes at least one low-resistance layer 12B, having smaller specific resistance than a layer 12C arranged closest to the gate electrode and a layer 12A arranged farthest away from the gate electrode, between the layer arranged closest to the gate electrode and the layer arranged farthest away from the gate electrode, and a process of carrying out a heat treatment after forming the oxide semiconductor layer.
摘要翻译：要解决的问题：提供一种制造薄膜晶体管的方法，该薄膜晶体管在制造具有氧化物半导体层的薄膜晶体管时，作为热处理的结果而抑制电特性的变化，并且特别适用于，制造大面积的装置。解决方案：在衬底11上具有氧化物半导体层12，源电极13，漏电极14，栅极绝缘膜15和栅电极的薄膜晶体管的制造方法包括：形成具有三层以上层叠结构的氧化物半导体层，其相邻组成不同，并且包括至少一层低电阻层12B，其比比最靠近栅电极布置的层12C具有更小的电阻率以及布置在距离栅电极最远的层之间，最靠近栅电极布置的层与最远离栅电极的层布置的层12A以及在形成氧化物半导体层之后进行热处理的工序。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011243631A Electronic device manufacturing method, thin film transistor, and electro-optic device and sensor 有权
标题翻译：电子器件制造方法，薄膜晶体管和电光器件和传感器
公开(公告)号：JP2011243631A
公开(公告)日：2011-12-01
申请号：JP2010112122
申请日：2010-05-14
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , C23C14/08 , H01L21/316 , H01L21/336 , H01L21/363
摘要： PROBLEM TO BE SOLVED: To reduce interfacial defects easily.SOLUTION: An electronic device manufacturing method comprises: a first deposition step for depositing on a substrate a first layer, which contains an oxide having oxygen nonstoichiometric properties, in a vacuum deposition chamber shut off from the atmosphere; a second deposition step for depositing on the first layer a second layer made of the same material as or a different material from that of the first layer; and a partial pressure control step for holding the first layer in a chamber shut off from the atmosphere, which includes the vacuum deposition chamber, under a higher oxygen partial pressure than that inside the vacuum deposition chamber in the first deposition step for a period after the first deposition step till the second deposition step.
摘要翻译：要解决的问题：容易地减少界面缺陷。解决方案：一种电子器件制造方法，包括：第一沉积步骤，用于在真空沉积室中与大气隔绝的情况下在衬底上沉积含有具有氧非化学计量特性的氧化物的第一层; 第二沉积步骤，用于在第一层上沉积由与第一层相同或不同材料制成的第二层; 以及分压控制步骤，用于在第一沉积步骤中在比第一沉积步骤中在比真空沉积室内的氧分压更高的氧分压下将第一层保持在与包括真空沉积室的气氛隔绝的室中，持续一段时间第一沉积步骤直到第二沉积步骤。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010013327A Microstructure of perovskite-type oxide single crystal and method for manufacturing the same, composite piezoelectric material, laminated piezoelectric vibrator, ultrasonic probe, and ultrasonic diagnostic apparatus 审中-公开
标题翻译：单晶氧化物单晶的微结构及其制造方法，复合压电材料，层叠压电振动器，超声波探头和超声波诊断装置
公开(公告)号：JP2010013327A
公开(公告)日：2010-01-21
申请号：JP2008175746
申请日：2008-07-04
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： YUYA SHIGENORI , SUZUKI MASAYUKI , TAKADA MASAHIRO
IPC分类号： C30B29/32 , A61B8/00 , C01G33/00 , C30B1/02 , C30B29/30 , H01L41/083 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/257 , H01L41/27 , H01L41/317 , H01L41/333 , H01L41/335 , H01L41/37 , H01L41/39
CPC分类号： B06B1/0629 , C30B1/02 , C30B29/32 , H01L41/083 , H01L41/18 , H01L41/183 , H01L41/333 , H01L41/37 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a perovskite-type oxide single crystal structure, in which shapes of a microstructure are maintained and the structure is uniformly single-crystallized by inducing solid phase epitaxy to single-crystallize a precursor part to obtain a single crystal structure. SOLUTION: The method includes: a step S1 of forming a coating layer on a surface of a seed single crystal substrate, the coating layer containing the same metallic components as those in a predetermined perovskite-type oxide; a step S2 of forming a joint body having a microstructured precursor of the perovskite-type oxide adhered to a surface of the coating layer; and a step S3 of heat-treating the joint body to induce a solid phase epitaxy, and thereby, single-crystallizing the precursor. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造钙钛矿型氧化物单晶结构的方法，其中保持了微观结构的形状，并且通过引发固相外延将结构均匀地单结晶以将前体单晶化部分获得单晶结构。解决方案：该方法包括：在种子单晶衬底的表面上形成涂层的步骤S1，该涂层含有与预定的钙钛矿型氧化物相同的金属组分; 形成具有附着在涂层表面的钙钛矿型氧化物的微结构化前体的接合体的台阶S2; 以及对接头体进行热处理以引起固相外延的步骤S3，从而使前体单结晶。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2007287948A Surface machining method and surface workpiece 审中-公开
标题翻译：表面加工方法和表面工作
公开(公告)号：JP2007287948A
公开(公告)日：2007-11-01
申请号：JP2006114034
申请日：2006-04-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKADA MASAHIRO , SUZUKI MASAYUKI
IPC分类号： H01L21/306 , C04B41/91
摘要： PROBLEM TO BE SOLVED: To improve the surface smoothness of an object to be machined simply and to a high level.
SOLUTION: In a surface machining method, a reactive substance 2 having a reactivity for an object to be machined 1 is brought into contact with a surface of the object to be machined 1 and they reacts therebetween for surface machining of the object to be machined 1. As a reactive substance, the reactive substance 2 having a reactivity for the object to be machined 1 under heating conditions is used (however, an active seed activated by plasma irradiation is excluded), and the reaction is executed at a temperature in which the reactive substance 2 reacts with the object to be machined 1.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：简单地提高待加工物体的表面平滑度和高水平。解决方案：在表面加工方法中，将具有对待加工物体1的反应性的反应物质2与待加工物体1的表面接触，并且它们之间在其间进行反应，以对物体进行表面加工被加工1.作为反应性物质，使用在加热条件下具有对待加工对象物1的反应性的反应性物质2（但不排除通过等离子体照射而活化的活性种子），反应在温度其中反应物质2与待加工物体1反应1.版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007254723A Eu-CONTAINING INORGANIC COMPOUND, LUMINESCENT COMPOSITION CONTAINING THE SAME AND ILLUMINANT, SOLID-STATE LASER APPARATUS AND LIGHT EMITTING DEVICE 审中-公开
标题翻译：含Eu的无机化合物，含有其的发光组合物和发光体，固态激光装置和发光装置
公开(公告)号：JP2007254723A
公开(公告)日：2007-10-04
申请号：JP2007039098
申请日：2007-02-20
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： SUZUKI MASAYUKI , TAKADA MASAHIRO , MORI JUNICHI , ISODA TOMOTAKE
IPC分类号： C09K11/80 , C01F7/00 , C01F17/00 , C04B35/44 , C09K11/62 , C09K11/64 , H01S3/06 , H01S3/094
CPC分类号： H01S3/109 , C01F17/0025 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/84 , C01P2004/03 , C04B35/50 , C04B2235/3224 , C09K11/7792 , H01S3/0606 , H01S3/08095 , H01S3/09408 , H01S3/09415 , H01S3/1603 , H01S3/1643 , H01S3/1685 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To optimize an amount of Eu dope in a garnet type Eu-containing inorganic compound having a polycrystalline structure by elucidating relation between the amount of the Eu dope and light emission characteristics. SOLUTION: The Eu-containing inorganic compound has the polycrystalline structure in which Eu is doped and treated to be a solid solution to the parent garnet type compound and contains >0.5 mole% to ≤50.0 mole% amount of the Eu dope occupying octadentate sites of the garnet structure. The amount of the Eu dope occupying the sites of the octadentate garnet structure is preferably 5.0-30.0 mole%. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过阐明Eu掺杂量与发光特性之间的关系，优化具有多晶结构的石榴石型Eu含量无机化合物中的Eu掺杂量。解决方案：含Eu的无机化合物具有多晶结构，其中Eu被掺杂并处理为母体石榴石型化合物的固溶体，并且含有0.5重量％至≤50.0摩尔％的Eu掺杂量石榴石结构的八面体位置。占据八边形石榴石结构部位的Eu掺杂量优选为5.0〜3.0.0摩尔％。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2012059860A Thin film transistor and method of manufacturing the same, and device with thin film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及具有薄膜晶体管的器件
公开(公告)号：JP2012059860A
公开(公告)日：2012-03-22
申请号：JP2010200570
申请日：2010-09-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , H01L27/14 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured at low temperature and exhibits high electron field-effect mobility.SOLUTION: In the thin film transistor having an active layer which comprises an oxide semiconductor layer, the active layer includes a first area Ahaving a first electron affinity χin the film thickness direction from the gate electrode side, and a second area Ahaving a second electron affinity χsmaller than the first electron affinity χ. A well type potential where the first area Ais a well layer, and the second area Aand a gate insulating film are a barrier layer is constituted. Here, the active layer comprises the oxide semiconductor layer consisting of a(InO).b(GaO).c(ZnO), and b/(a+b) of the second area Ais larger than b/(a+b) of the first area A.
摘要翻译：解决的问题：提供可以在低温下制造并具有高电子场效应迁移率的薄膜晶体管。解决方案：在具有包括氧化物半导体层的有源层的薄膜晶体管中，有源层包括具有第一电子亲和力χ 1 具有第二电子密度χ 2 “POST”> 2 小于第一电子亲和力χ 1 。第一区域A 1 的井型电位是阱层，第二区域A 2 和栅极绝缘膜是构成阻挡层。这里，有源层包括由（In 2 O 3 ）组成的氧化物半导体层b（Ga 2 O 3 ）c（ZnO）和b /（a + b） “> 2 大于第一区域A 1 的b /（a + b）。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012049211A Method of manufacturing oxide semiconductor thin film, oxide semiconductor thin film, method of manufacturing thin film transistor, thin film transistor, and device having thin film transistor 有权
标题翻译：氧化物半导体薄膜，氧化物半导体薄膜的制造方法，制造薄膜晶体管的方法，薄膜晶体管和具有薄膜晶体管的器件
公开(公告)号：JP2012049211A
公开(公告)日：2012-03-08
申请号：JP2010187883
申请日：2010-08-25
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKADA MASAHIRO , MOCHIZUKI FUMIHIKO , HAMA IFUMI
IPC分类号： H01L21/203 , G02F1/1368 , H01L21/336 , H01L27/14 , H01L27/146 , H01L29/786 , H01L31/09
摘要： PROBLEM TO BE SOLVED: To manufacture an IGZO-system oxide thin film having a high reproducibility and suitable for producing a large area device, especially a flexible device, without heat treatment at a high temperature of 300°C or higher.SOLUTION: An oxide semiconductor thin film in which In, Ga, Zn, and O are used as main constituent elements, and in which a composition ratio satisfies relationships of 11/20≤Ga/(In+Ga+Zn)≤9/10, 3/4≤Ga/(In+Ga)≤9/10, and Zn/(In+Ga+Zn)≤1/3, is formed in an argon gas atmosphere by the sputtering method without introducing an oxygen gas. Heat treatment at equal to or higher than 100°C and lower than 300°C is performed in an oxidative atmosphere to the formed oxide semiconductor thin film.
摘要翻译：解决的问题：为了制造具有高再现性的IGZO系氧化物薄膜，适合制造大面积的装置，特别是挠性装置，在300℃以上的高温下不进行热处理。解决方案：其中使用In，Ga，Zn和O作为主要组成元素，其组成比满足11 /20≤Ga/（In + Ga + Zn）≤的关系的氧化物半导体薄膜 9/10，3 /4≤Ga/（In + Ga）≤9/ 10，Zn /（In + Ga + Zn）≤1/ 3在氩气气氛中通过溅射法形成，而不引入氧加油站。在氧化气氛中对形成的氧化物半导体薄膜进行等于或高于100℃且低于300℃的热处理。版权所有（C）2012，JPO＆INPIT

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