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41. 发明申请

US20060057821A1 Low temperature methods of etching semiconductor substrates 有权
标题翻译：低温半导体衬底蚀刻方法
公开(公告)号：US20060057821A1
公开(公告)日：2006-03-16
申请号：US11208490
申请日：2005-08-22
申请人： Sun-Ghil Lee , Yu-Gyun Shin , Jong-Wook Lee , Deok-Hyung Lee , In-Soo Jung , Young-Eun Lee
发明人： Sun-Ghil Lee , Yu-Gyun Shin , Jong-Wook Lee , Deok-Hyung Lee , In-Soo Jung , Young-Eun Lee
IPC分类号： H01L21/30
CPC分类号： H01L29/66636 , H01L21/3065 , H01L21/32135 , H01L29/165 , H01L29/66628
摘要： Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.
摘要翻译：蚀刻半导体衬底的方法可以包括提供相对于半导体衬底具有化学反应性的第一气体，并且在提供第一气体的同时，提供不同于第一气体的第二气体。更具体地，第二气体的分子可以包括氢原子，第二气体可以降低第一气体与半导体衬底发生化学反应的温度。第一和第二气体的混合物可以设置在邻近半导体衬底处以蚀刻半导体衬底。

42. 发明申请

US20050248035A1 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same 审中-公开
标题翻译：具有接触插塞和应力缓冲垫片的半导体器件及其制造方法
公开(公告)号：US20050248035A1
公开(公告)日：2005-11-10
申请号：US11092524
申请日：2005-03-29
申请人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
发明人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
IPC分类号： H01L21/28 , H01L21/8234 , H01L23/48 , H01L23/52 , H01L27/06 , H01L29/40
CPC分类号： H01L29/7842 , H01L21/823425 , H01L21/823475 , H01L27/0688
摘要： A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

43. 发明授权

US07998851B2 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same 有权
标题翻译：具有接触插塞和应力缓冲垫片的半导体器件及其制造方法
公开(公告)号：US07998851B2
公开(公告)日：2011-08-16
申请号：US12715599
申请日：2010-03-02
申请人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
发明人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
IPC分类号： H01L21/36
CPC分类号： H01L29/7842 , H01L21/823425 , H01L21/823475 , H01L27/0688
摘要： A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

44. 发明授权

US08481416B2 Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same 有权
标题翻译：具有接触插塞和应力缓冲垫片的半导体器件及其制造方法
公开(公告)号：US08481416B2
公开(公告)日：2013-07-09
申请号：US13205461
申请日：2011-08-08
申请人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
发明人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
IPC分类号： H01L21/20
CPC分类号： H01L29/7842 , H01L21/823425 , H01L21/823475 , H01L27/0688
摘要： A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

45. 发明申请

US20110300704A1 SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS WITH STRESS BUFFER SPACERS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有应力缓冲垫片的接触片的半导体器件及其制造方法
公开(公告)号：US20110300704A1
公开(公告)日：2011-12-08
申请号：US13205461
申请日：2011-08-08
申请人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
发明人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
IPC分类号： H01L21/283
CPC分类号： H01L29/7842 , H01L21/823425 , H01L21/823475 , H01L27/0688
摘要： A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

46. 发明申请

US20100159689A1 SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS WITH STRESS BUFFER SPACERS AND METHODS OF FABRICATING THE SAME 有权
标题翻译：具有应力缓冲垫片的接触片的半导体器件及其制造方法
公开(公告)号：US20100159689A1
公开(公告)日：2010-06-24
申请号：US12715599
申请日：2010-03-02
申请人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
发明人： Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee , Sun-Ghil Lee , In-Soo Jung , Young-Eun Lee , Deok-Hyung Lee
IPC分类号： H01L21/768
CPC分类号： H01L29/7842 , H01L21/823425 , H01L21/823475 , H01L27/0688
摘要： A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底上的无机绝缘层，延伸穿过无机绝缘层以接触半导体衬底的接触插塞和设置在节点接触插塞和无机绝缘层之间的应力缓冲间隔件。该器件还包括设置在无机绝缘层上并具有沿着无机绝缘层延伸以接触接触插塞的源极/漏极区域的薄膜晶体管（TFT）。该器件还可以包括插入无机绝缘层和半导体衬底之间的蚀刻停止层。

47. 发明授权

US08453894B2 Carrier for use with both younger and older infants 有权
标题翻译：与年龄较大的婴儿一起使用的载体
公开(公告)号：US08453894B2
公开(公告)日：2013-06-04
申请号：US13478688
申请日：2012-05-23
申请人： In-Soo Jung , In Youl Lee
发明人： In-Soo Jung , In Youl Lee
IPC分类号： A47D13/02
CPC分类号： A47D13/025
摘要： A carrier for use with both younger and older infants, is capable of placing the legs of younger infants having a smaller build and older infants having a bigger build into a desired M-shaped leg posture. A means for opening and closing the leg space formed in a back support web body of the carrier, adapts the carrier for continued use as the younger infants grow into older infants.
摘要翻译：与年龄较大的婴儿一起使用的载体能够将具有较小构造的较小婴儿的腿和具有较大构造的较大的婴儿的腿放置成所需的M形腿部姿势。用于打开和关闭形成在载体的背部支撑纤维网体中的腿部空间的装置，使得载体随着年龄较小的婴儿长大而适应继续使用。

48. 发明申请

US20090130826A1 Method of Forming a Semiconductor Device Having a Strained Silicon Layer on a Silicon-Germanium Layer 审中-公开
标题翻译：在硅锗层上形成具有应变硅层的半导体器件的方法
公开(公告)号：US20090130826A1
公开(公告)日：2009-05-21
申请号：US12330796
申请日：2008-12-09
申请人： Young-Pil Kim , Sun-Ghil Lee , Yu-Gyun Shin , Jong-Wook Lee , In-Soo Jung
发明人： Young-Pil Kim , Sun-Ghil Lee , Yu-Gyun Shin , Jong-Wook Lee , In-Soo Jung
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L29/1054 , H01L29/66651 , H01L29/78
摘要： A method of forming a semiconductor device having a strained silicon (Si) layer on a silicon germanium (SiGe) layer is provided. The method includes preparing a silicon substrate. A SiGe layer is formed on the silicon substrate. At least a part of the SiGe layer has a first dislocation density. A strained Si layer having a second dislocation density lower than the first dislocation density is formed on the SiGe layer.
摘要翻译：提供了在硅锗（SiGe）层上形成具有应变硅（Si）层的半导体器件的方法。该方法包括制备硅衬底。在硅衬底上形成SiGe层。至少一部分SiGe层具有第一位错密度。在SiGe层上形成具有低于第一位错密度的第二位错密度的应变Si层。

49. 发明授权

US07867841B2 Methods of forming semiconductor devices with extended active regions 有权
标题翻译：形成具有扩展活性区域的半导体器件的方法
公开(公告)号：US07867841B2
公开(公告)日：2011-01-11
申请号：US11968242
申请日：2008-01-02
申请人： Dong-Chan Lim , Byeong-Yun Nam , Soo-Ik Jang , In-Soo Jung
发明人： Dong-Chan Lim , Byeong-Yun Nam , Soo-Ik Jang , In-Soo Jung
IPC分类号： H01L21/8238
CPC分类号： H01L21/76283 , H01L21/84 , H01L27/10873 , H01L27/1203
摘要： A method of forming a semiconductor device can include forming a trench in a semiconductor substrate to define an active region. The trench is filled with a first device isolation layer. A portion of the first device isolation layer is etched to recess a top surface of the first device isolation layer below an adjacent top surface of the active region of the semiconductor substrate and to partially expose a sidewall of the active region. The exposed sidewall of the active region is epitaxially grown to form an extension portion of the active region that extends partially across the top surface of the first device isolation layer in the trench. A second device isolation layer is formed on the recessed first device isolation layer in the trench. The second device isolation layer is etched to expose a top surface of the extension portion of the active region and leave a portion of the second device isolation layer between extension portions of active regions on opposite sides of the trench. An interlayer dielectric is formed on the semiconductor substrate and the second device isolation layer. A conductive contact is formed extending through the interlayer dielectric layer and directly contacting at least a portion of both the active region and the extension portion of the active region overlying the second device isolation layer.
摘要翻译：形成半导体器件的方法可以包括在半导体衬底中形成沟槽以限定有源区。沟槽填充有第一器件隔离层。第一器件隔离层的一部分被蚀刻以将第一器件隔离层的顶表面凹陷在半导体衬底的有源区的相邻顶表面下方并且部分地暴露有源区的侧壁。有源区的暴露的侧壁被外延生长以形成有源区的延伸部分，部分地延伸穿过沟槽中的第一器件隔离层的顶表面。第二器件隔离层形成在沟槽中凹陷的第一器件隔离层上。蚀刻第二器件隔离层以暴露有源区的延伸部分的顶表面，并且将第二器件隔离层的一部分留在沟槽的相对侧上的有源区的延伸部分之间。在半导体衬底和第二器件隔离层上形成层间电介质。形成延伸穿过层间介电层并且直接接触覆盖在第二器件隔离层上的有源区域和有源区域的延伸部分的至少一部分的导电接触。

50. 发明授权

US07082641B1 Systems and methods for replaceable luggage handle 有权
标题翻译：更换行李箱的系统和方法
公开(公告)号：US07082641B1
公开(公告)日：2006-08-01
申请号：US10712614
申请日：2003-11-12
申请人： In-Soo Jung , Byung Ki Choi
发明人： In-Soo Jung , Byung Ki Choi
IPC分类号： B25G1/04
CPC分类号： A45C13/262 , Y10T16/451 , Y10T16/455
摘要： A transport device comprises a replaceable telescoping handle. Replacement is achieved by including a release and retaining mechanism in a base to which the telescoping handle is installed. A user can obtain a replacement telescoping handle, release and remove a broken telescoping handle using the release and retaining mechanism, and then install the replacement telescoping handle.
摘要翻译：运输装置包括可更换的伸缩手柄。通过将释放和保持机构包括在安装有伸缩手柄的基座中来实现替换。用户可以使用释放和保持机构获得更换的伸缩手柄，释放和拆下断开的伸缩手柄，然后安装更换的伸缩手柄。

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