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41. 发明专利

JP2006087191A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006087191A
公开(公告)日：2006-03-30
申请号：JP2004268103
申请日：2004-09-15
申请人： Denso Corp , 株式会社デンソー
发明人： MASAMITSU KUNIAKI , TEJIMA TAKANORI
IPC分类号： G01R31/26 , H01L21/822 , H01L27/04 , H02M1/00
摘要： PROBLEM TO BE SOLVED: To judge the overheat of not only a semiconductor power element but also a free-wheel diode connected in parallel with it.
SOLUTION: This semiconductor device is equipped with a power part which is composed of an IGBT11 and a free-wheel diode 21 connected in parallel with this IGBT 11, a first diode 12 which detects the temperature of the IGBT11, and a second diode 22 which detects the temperature of the freewheel diode 21. The first and second diodes 12 and 22 are connected in parallel, and the detected temperature voltage Vtemp by it is inputted into a temperature detecting circuit 40, and this temperature-detecting circuit 40 decides overheating, based on the detected temperature voltage Vtemp.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了判断半导体功率元件的过热，以及与其并联连接的续流二极管的过热。解决方案：该半导体器件配备有由与IGBT11并联连接的IGBT11和续流二极管21构成的功率部，检测IGBT11的温度的第一二极管12，以及第二二极管22，其检测续流二极管21的温度。第一和第二二极管12和22并联连接，并且其检测到的温度电压Vtemp被输入到温度检测电路40，并且该温度检测电路40决定基于检测到的温度电压Vtemp过热。版权所有（C）2006，JPO＆NCIPI

42. 发明专利

JP2005244166A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005244166A
公开(公告)日：2005-09-08
申请号：JP2004291397
申请日：2004-10-04
申请人： Denso Corp , 株式会社デンソー
发明人： HIRANO NAOHIKO , MASAMITSU KUNIAKI
IPC分类号： H01L23/40 , H01L21/28 , H01L21/44 , H01L21/50 , H01L21/60 , H01L23/02 , H01L23/34 , H01L23/433 , H01L23/488 , H01L23/492 , H01L25/07
CPC分类号： H01L24/33 , H01L23/4334 , H01L23/488 , H01L24/32 , H01L25/072 , H01L2224/32245 , H01L2224/32257 , H01L2224/32258 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01068 , H01L2924/01082 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/351 , H01L2924/3512 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To prevent adverse effect on heat dissipation characteristics as much as possible even if a solder joint is broken by thermal stress in a semiconductor device where heat sinks are solder jointed to the surface side and the rear surface side of a semiconductor chip and then they are resin molded. SOLUTION: The semiconductor device S1 comprises first and second semiconductor chips 11 and 12, a lower heat sink 20 bonded to the rear surface side of the semiconductor chips 11 and 12 through first solder 51, an upper heat sink 30 bonded to the surface side of the semiconductor chips 11 and 12 through second solder 52, and mold resin 60 sealing both heat sinks 20 and 30 and the semiconductor chips 11 and 12 to wrap in wherein the surface of the semiconductor chips 11 and 12 serves as an element forming surface. Among solder joints by solders 51, 52 and 53, strain value caused by thermal stress of the first solder 51 is highest. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使在将散热器焊接到表面侧和背面侧的半导体器件中，即使在焊接接头被热应力破坏的情况下，尽可能地防止对散热特性的不利影响半导体芯片，然后进行树脂模制。解决方案：半导体器件S1包括第一和第二半导体芯片11和12，通过第一焊料51接合到半导体芯片11和12的后表面侧的下部散热器20，与散热器30接合的上部散热器30 半导体芯片11和12的表面侧通过第二焊料52，以及将散热片20和30以及半导体芯片11和12两者密封的模制树脂60包裹，其中半导体芯片11和12的表面用作元件形成表面。在焊料51,52和53的焊点中，由第一焊料51的热应力引起的应变值最高。版权所有（C）2005，JPO＆NCIPI

43. 发明专利

JP2002110893A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002110893A
公开(公告)日：2002-04-12
申请号：JP2000305228
申请日：2000-10-04
申请人： DENSO CORP
发明人： FUKUDA YUTAKA , NAKASE YOSHIMI , MASAMITSU KUNIAKI , MAKINO TOMOATSU
IPC分类号： H01L23/29 , H01L23/36 , H01L25/04 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces the concentration of stress on a bonding member connecting a semiconductor chip and a conductor member due to thermal stress. SOLUTION: An E heat sink 3 is bonded by solder to the top surfaces 1a and 2a of semiconductor chips 1 and 2, a 2nd conductor 5 is bonded by solder 4 to the backsides 1b and 2b, and a 3rd conductor member 6 is bonded by solder to the top surface 3a of the E heat sink 3. The E heat sink 3 is provided with a step part 3c to have a thin part 3d, and the bonding area between the E heat sink 3 and 3rd semiconductor member 6 is smaller than that between the E heat sink 3 and semiconductor chips 1 and 2. The respective members 1 to 8 are sealed with resin so that the backside 5b of the 2nd conductor member 5 and the top surface 6a of the 3rd conductor member 6 are exposed.

44. 发明专利

JP2004006967A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2004006967A
公开(公告)日：2004-01-08
申请号：JP2003281272
申请日：2003-07-28
申请人： DENSO CORP
发明人： MASAMITSU KUNIAKI , HIRAI YASUYOSHI
IPC分类号： H01L23/40 , H01L23/29 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which heat dissipation and electrical conductance are improved, and different semiconductor chips can be easily accommodated. SOLUTION: A pair of heat sinks are arranged so as to sandwich superficially arranged Si chips 1a, 1b. The main electrodes of the Si chips 1a, 1b are contacted to the respective heat sinks 2, 3, which are made of a metal mainly composed of Cu or Al, via bonding material 4 to secure thermal contacts as well as electrical contacts. Projections 2a are formed on one of the heat sinks 2 at positions that correspond to the facing Si chips 1a, 1b, wherein the top ends of the projections 2a are connected to the main electrodes. The Si chips 1a, 1b and each of the heat sinks 2, 3 are sealed with resin. COPYRIGHT: (C)2004,JPO

45. 发明专利

JP2003110064A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003110064A
公开(公告)日：2003-04-11
申请号：JP2002196140
申请日：2002-07-04
申请人： DENSO CORP
发明人： HIRANO NAOHIKO , TEJIMA TAKANORI , MASAMITSU KUNIAKI , YAGI KENJI , NAKASE YOSHIMI , OKURA YASUTSUGU , NOMURA KAZUHITO , FUKUDA YUTAKA
IPC分类号： H01L23/29
摘要： PROBLEM TO BE SOLVED: To prevent an element from being broken when large thermal stress operates on a semiconductor device, and to improve long-term reliability in the semiconductor device. SOLUTION: A semiconductor device 1 is equipped with a semiconductor chip 2 and a pair of heat sinks 3 and 4 for radiating from both the surfaces of the semiconductor chip 2. Nearly the whole of the semiconductor device 1 is molded by resin 7. When the thickness of the semiconductor chip 2 is set to t1, and the thickness of at least one heat sink 3 in the pair of heat sinks 3 and 4 is set to t2, t2/t1>=5 should be satisfied. It is confirmed that element breakdown does not occur even if large thermal stress operates on the semiconductor device 1 by trial manufacture and experiments.

46. 发明专利

JP2001284510A MANUFACTURING METHOD OF ELECTRICAL EQUIPMENT 失效
公开(公告)号：JP2001284510A
公开(公告)日：2001-10-12
申请号：JP2000097912
申请日：2000-03-30
申请人： DENSO CORP
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/12 , H01L23/29 , H01L23/40
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing method of an electrical equipment, which can reduce the thicknesses of bonding members to the utmost. SOLUTION: A semiconductor element 1 and a heat dissipation block 4 are mounted on the surface 3a on one side of the surfaces of a second he at dissipation member 3 via soldering pastes and a soldering paste is kept pasted on the block 4. After jigs 6 for regulating the distance between a first heat dissipation member 2 and the member 3 are arranged on the surface 3a on one side of the surfaces of the members 3, the member 2 is mounted on the jigs 6 in such a way as to come into contact with the soldering paste on the block 4 and the jigs 6 and a weight 8 is mounted on the surface of the member 2. After that, the soldering pastes are subjected to reflow to harden the soldering pastes, whereby the element 1, the members 2 and 3 and the block 4 which were stacked with solders 5, are bonded to each other.

47. 发明专利

JP2003133329A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003133329A
公开(公告)日：2003-05-09
申请号：JP2002223933
申请日：2002-07-31
申请人： DENSO CORP
发明人： OKURA YASUTSUGU , MASAMITSU KUNIAKI , HIRANO NAOHIKO
IPC分类号： H01L29/41 , H01L21/336 , H01L21/768 , H01L23/29 , H01L23/40 , H01L23/522 , H01L29/417 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To prevent large deformation of an organic protection film, when a large thermal stress is applied to a semiconductor device and to almost surely eliminate short circuiting of a wiring layer. SOLUTION: This semiconductor device is formed by jointing heat sinks 4 with a semiconductor element 1 on its both sides. If the thickness of a wiring layer 2 provided on the surface of the semiconductor element 1 is defined as t1, and if the thickness of an organic protection film 3 formed as to cover a wiring layer 2 is defined as t2, the two values have the relation t1 / deg.C. By making the semiconductor have such a structure, the short circuiting of the wiring layer 2 can almost surely prevented, according to the result of trial manufacture and experiment, etc.

48. 发明专利

JP2003124406A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003124406A
公开(公告)日：2003-04-25
申请号：JP2002228272
申请日：2002-08-06
申请人： DENSO CORP
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/29 , H01L23/31 , H01L23/34
摘要： PROBLEM TO BE SOLVED: To prevent a resin from being peeled when thermal stress acts and improve a reliability. SOLUTION: A semiconductor device 11 radiates heat through a pair of heat radiating plates 13 and 14 from both the surfaces of a heat generating element 12. Substantially, the entire part of the device is formed by molding a resin 18. A solder layer for connecting the heat generating element 12 to the heat radiating plates 13 and 14 is provided. A polyamide resin 16 applied to the surfaces of the heat radiating plates 13 and 14 is provided for improving an adhesion to the resin 18. The thickness of application of the polyamide resin 16 is about 20% or less as low as the thickness dimension of the solder layer.

49. 发明专利

JP2002329804A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002329804A
公开(公告)日：2002-11-15
申请号：JP2001132283
申请日：2001-04-27
申请人： DENSO CORP
发明人： MASAMITSU KUNIAKI
IPC分类号： H01L23/12 , H01L23/34
摘要： PROBLEM TO BE SOLVED: To prevent deterioration due to thermal stress as much as possible by relaxing stress applied to the joining sections of a heat-generating element and a heat sink. SOLUTION: A semiconductor device 11 is constituted in such a manner that a recessed section 13b in which the heat-generating element 12 is housed is formed to the heat sink 13, an underside electrode 16 is formed to the heat- generating element 12, a top-face peripheral electrode 19 is formed on the heat- generating element 12, a metallic annular member 15 placed on the heat sink 13 and the top-face peripheral electrode 19 on the heat-generating element 12 is shaped, and the recessed section 13b of the heat sink 13 and the underside electrode 16 on the heat-generating element 12 are soldered while the heat sink 13 and the top-face peripheral electrode 19 and the annular member 15 on the heat-generating element 12 are soldered. Since the semiconductor device is configured so that approximately the whole of the heat-generating element 12 is soldered to the heat sink 13 and the annular member 15 in this case, the restraint of the heat-generating element 12 is strengthened largely.

50. 发明专利

JP2001156225A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001156225A
公开(公告)日：2001-06-08
申请号：JP33311999
申请日：1999-11-24
申请人： DENSO CORP
发明人： MASAMITSU KUNIAKI , HIRAI YASUYOSHI
IPC分类号： H05K7/20 , H01L23/36 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, with which heat radiation or electric conductivity can be improved and various semiconductor chips can be easily housed. SOLUTION: A pair of heat radiating members 2 and 3 are located so as to sandwich planar located Si chips 1a and 1b, and the main electrodes of the Si chips 1a and 1b and the respective heat radiating members 2 and 3 mainly composed of metals of Cu or Al are connected through a bonding member 4 so as to electrically and thermally connect them. On the heat radiating member 2 on one side, a protruding part 2a is formed corresponding to the confronted Si chips 1a and 1b and the top end of that protruding part 2a and the main electrode are connected. Then, the Si chips 1a and 1b and the respective heat radiating members 2 and 3 are sealed with resins.

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