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41. 发明授权

US07234228B2 Method of fabricating novel seed layers for fabricating spin valve heads 有权
标题翻译：制造旋转阀头的新种子层的方法
公开(公告)号：US07234228B2
公开(公告)日：2007-06-26
申请号：US10308597
申请日：2002-12-03
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Trong
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Trong
IPC分类号： G11B5/187 , G11B5/39
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种形成具有新型种子层和合成反铁磁固定层的底部自旋阀传感器元件的方法。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

42. 发明授权

US07211447B2 Structure and method to fabricate high performance MTJ devices for MRAM applications 失效
标题翻译：制造用于MRAM应用的高性能MTJ器件的结构和方法
公开(公告)号：US07211447B2
公开(公告)日：2007-05-01
申请号：US11080868
申请日：2005-03-15
申请人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
发明人： Cheng T. Horng , Ru-Ying Tong , Mao-Min Chen , Liubo Hong , Min Li
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A method of forming a high performance MTJ in an MRAM array is disclosed. A Ta/Ru capping layer in a bottom conductor is sputter etched to remove the Ru layer and form an amorphous Ta capping layer. A key feature is a subsequent surface treatment of the Ta capping layer in a transient vacuum chamber where a self-annealing occurs and a surfactant layer is formed on the Ta surface. The resulting smooth and flat Ta surface promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2.
摘要翻译：公开了一种在MRAM阵列中形成高性能MTJ的方法。溅射蚀刻底部导体中的Ta / Ru覆盖层以去除Ru层并形成无定形Ta覆盖层。一个关键的特征是在瞬态真空室中Ta覆盖层的后续表面处理，其中发生自退火并且在Ta表面上形成表面活性剂层。所得到的平滑且平坦的Ta表面促进在表面活性剂层上随后形成的MTJ层中的光滑和平坦的表面。对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。

43. 发明授权

US06993827B2 Method of making a bottom spin valve 失效
标题翻译：制造底部旋转阀的方法
公开(公告)号：US06993827B2
公开(公告)日：2006-02-07
申请号：US10460086
申请日：2003-06-12
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/187
CPC分类号： G11B5/3906 , G11B7/0053 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (
摘要翻译：提供底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例及其制造方法。在一个实施例中，传感器具有超薄（<20埃）单自由层和复合高电导层（HCL），提供高输出，低矫顽力和正磁致伸缩。在第二实施例中，传感器具有复合自由层和单个HCL，其也具有高输出，低矫顽力和正磁致伸缩。这些传感器能够读取超过60Gb / in <2>的密度。

44. 发明授权

US06857180B2 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor 失效
标题翻译：用于制造图案化合成纵向交换偏置GMR传感器的方法
公开(公告)号：US06857180B2
公开(公告)日：2005-02-22
申请号：US10104802
申请日：2002-03-22
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong , Yun-Fei Li , You Feng Zheng , Simon Liao , Kochan Ju , Cherng Chyi Han
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3143 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
摘要翻译：提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

45. 发明授权

US06522507B1 Single top spin valve heads for ultra-high recording density 失效
标题翻译：单顶旋转阀头用于超高记录密度
公开(公告)号：US06522507B1
公开(公告)日：2003-02-18
申请号：US09570017
申请日：2000-05-12
申请人： Cheng T. Horng , Min Li , Ru-Ying Tong
发明人： Cheng T. Horng , Min Li , Ru-Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3163 , G11B5/3903 , Y10T29/49044
摘要： A method for fabricating a single top spin valve head that is capable of reading ultra-high density recordings. Said top spin valve has a CoFe free layer for high GMR ratio, which is grown on a NiCr/Ru layer to provide better magnetic properties and has a ferromagnetically coupled CoFe/NiCr/CoFe laminated pinned layer for thermal stability and robustness.
摘要翻译：一种能够读取超高密度记录的单顶旋转阀头的制造方法。所述顶部自旋阀具有用于高GMR比的CoFe自由层，其在NiCr / Ru层上生长以提供更好的磁性，并具有用于热稳定性和鲁棒性的铁磁耦合CoFe / NiCr / CoFe层压钉扎层。

46. 发明授权

US10312433B2 Reduction of capping layer resistance area product for magnetic device applications 有权
公开(公告)号：US10312433B2
公开(公告)日：2019-06-04
申请号：US13441158
申请日：2012-04-06
申请人： Guenole Jan , Ru-Ying Tong
发明人： Guenole Jan , Ru-Ying Tong
IPC分类号： H01L29/82 , H01L21/02 , H01L43/12 , H01L43/08 , H01F10/32 , H01F41/30 , G11C11/16
摘要： A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.

47. 发明授权

US08860156B2 Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM 有权
标题翻译： STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
公开(公告)号：US08860156B2
公开(公告)日：2014-10-14
申请号：US13609780
申请日：2012-09-11
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
摘要翻译：公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

48. 发明授权

US08710603B2 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
标题翻译：具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用
公开(公告)号：US08710603B2
公开(公告)日：2014-04-29
申请号：US13408555
申请日：2012-02-29
申请人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

49. 发明授权

US08508006B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US08508006B2
公开(公告)日：2013-08-13
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

50. 发明申请

US20120299134A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 有权
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20120299134A1
公开(公告)日：2012-11-29
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L21/46
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

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