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    • 43. 发明申请
    • ENERGY SENSORS FOR LIGHT BEAM ALIGNMENT
    • 用于光束对准的能量传感器
    • WO2013028272A1
    • 2013-02-28
    • PCT/US2012/046093
    • 2012-07-10
    • CYMER, INC. ( A NEVADA CORPORATION)GRAHAM, Matthew, R.CHANG, StevenCROUCH, James, H.FOMENKOV, Igor, V.
    • GRAHAM, Matthew, R.CHANG, StevenCROUCH, James, H.FOMENKOV, Igor, V.
    • H05G2/00
    • G03F7/70033H05G2/003H05G2/008
    • An apparatus includes a drive laser system producing an amplified light beam of pulses that travels along a drive axis; a beam delivery system that directs the amplified light beam of pulses toward a target region; a target material delivery system that provides a target mixture containing a target material in the target region; two or more sensors radially separated from a main axis that crosses the target region, the two or more sensors being configured to detect energy of ultraviolet electromagnetic radiation emitted from a plasma state of the target material when the amplified light beam of pulses intersects the target mixture; and a controller that receives the output from the two or more sensors. The controller is configured to estimate a relative radial alignment between the target mixture and the drive axis within the target region based on an analysis of the detected energy.
    • 一种装置包括驱动激光系统,其产生沿驱动轴线行进的放大的脉冲光束; 射束传送系统,其将放大的脉冲光束朝向目标区域引导; 目标材料输送系统,其在目标区域中提供含有靶材料的目标混合物; 两个或更多个传感器与跨越目标区域的主轴径向分离,两个或更多个传感器被配置为当被放大的脉冲光束与目标混合物相交时,检测从目标材料的等离子体状态发射的紫外电磁辐射的能量 ; 以及接收来自两个或更多个传感器的输出的控制器。 控制器被配置为基于对所检测的能量的分析来估计目标混合物和目标区域内的驱动轴之间的相对径向对准。
    • 47. 发明申请
    • EUV OPTICS
    • EUV光学
    • WO2008020965A2
    • 2008-02-21
    • PCT/US2007/016648
    • 2007-07-24
    • CYMER, INC.FOMENKOV, Igor, V.BOWERING, Norbert, R.
    • FOMENKOV, Igor, V.BOWERING, Norbert, R.
    • G02B5/08
    • G03F7/7015G02B5/0891G02B7/182G21K1/062Y10T29/49982
    • In a first aspect, a method of fabricating an EUV light source mirror is disclosed which may comprise the acts/steps of providing a plurality of discrete substrates; coating each substrate with a respective multilayer coating; securing the coated substrates in an arrangement wherein each coated substrate is oriented to a common focal point; and thereafter polishing at least one of the multilayer coatings. In another aspect, an optic for use with EUV light is disclosed which may comprise a substrate; a smoothing layer selected from the group of materials consisting of Si, C, Si 3 N 4 , B 4 C, SiC and Cr, the smoothing layer material being deposited using highly energetic deposition conditions ^nd a multilayer dielectric coating. In another aspect, a corrosion resistant, multilayer coating for an EUV mirror may comprise alternating layers of Si and a compound material having nitrogen and a 5th period transition metal.
    • 在第一方面中,公开了一种制造EUV光源反射镜的方法,其可以包括提供多个离散衬底的动作/步骤; 用各自的多层涂层涂覆每个基材; 将涂覆的基底固定在一种布置中,其中每个涂覆的基底都朝向共同的焦点; 之后抛光至少一个多层涂层。 另一方面,公开了一种与EUV光一起使用的光学器件,其可以包括衬底; 选自Si,C,Si 3 N 4,B 4 C,SiC和Cr的材料组中的平滑层, 使用高能量沉积条件和多层电介质涂层来沉积平滑层材料。 另一方面,用于EUV反射镜的耐腐蚀多层涂层可以包括Si和具有氮和第五周期过渡金属的化合物材料的交替层。
    • 48. 发明申请
    • SYSTEMS AND METHODS FOR EUV LIGHT SOURCE METROLOGY
    • EUV光源计量系统与方法
    • WO2007008470A2
    • 2007-01-18
    • PCT/US2006/025792
    • 2006-06-29
    • CYMER, INC.FOMENKOV, Igor, V.BOWERING, Norbert, R.HOFFMAN, Jerzy, R.
    • FOMENKOV, Igor, V.BOWERING, Norbert, R.HOFFMAN, Jerzy, R.
    • G01J1/42
    • G03F7/7085B82Y10/00G21K2201/061
    • Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi 2 /Si multi layer mirror.
    • 披露了EUV光源计量系统和方法。 在第一方面,用于测量EUV光源功率输出的系统可以包括沿着EUV光路径设置的光电子源材料,以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面,用于测量EUV光强度的系统可以包括多层反射镜,例如Mo / Si,沿着EUV光路径可弃,以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面,离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。