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41. 发明授权

US07858537B2 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US07858537B2
公开(公告)日：2010-12-28
申请号：US11517456
申请日：2006-09-08
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/324 , H01L21/477
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
摘要翻译：在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频功率，将硼引入到衬底表面附近。

42. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

43. 发明申请

US20070074813A1 Method and apparatus for plasma doping 审中-公开
标题翻译：等离子体掺杂的方法和装置
公开(公告)号：US20070074813A1
公开(公告)日：2007-04-05
申请号：US11603146
申请日：2006-11-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： C23F1/00
CPC分类号： H01J37/32412 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/3299 , H01L21/2236
摘要： A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
摘要翻译：一种用于杂质注入的方法，其中将基板放置在设置在其中将被引入真空的室内的台上，并且还提供注入杂质。将第一高频电力施加到等离子体发生元件，从而产生等离子体，使得腔室中的杂质注入基板。此外，第二高频电力被施加到桌子上。检测到的是室内等离子体的状态，以及表中的电压或电流。控制器根据检测到的等离子体的状态和/或检测到的电压或电流来控制第一和第二高频电源中的至少一个，从而控制待植入的杂质的注入浓度。

44. 发明授权

US08624340B2 Plasma processing apparatus and method thereof 失效
标题翻译：等离子体处理装置及其方法
公开(公告)号：US08624340B2
公开(公告)日：2014-01-07
申请号：US13215276
申请日：2011-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
发明人： Tomohiro Okumura , Ichiro Nakayama , Hiroshi Kawaura , Tetsuya Yukimoto
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01L21/02667 , H05H1/28 , H05H1/34 , H05H1/3405
摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
摘要翻译：在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。等离子体喷射口形成在割炬单元的最下部。当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

45. 发明申请

US20060169673A1 Plasma processing method and apparatus 失效
公开(公告)号：US20060169673A1
公开(公告)日：2006-08-03
申请号：US11397626
申请日：2006-04-05
申请人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
发明人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , C23F4/00 , Y02E50/30
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.

46. 发明申请

US20050145340A1 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050145340A1
公开(公告)日：2005-07-07
申请号：US11067628
申请日：2005-02-28
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.
摘要翻译：等离子体处理方法包括通过在将真空室内的气体供给到真空室内部的同时排出真空室的内部来将真空室的内部压力控制到规定的压力。在控制真空室内部的压力的同时，将高频功率供给到在另一端开放的第一导体的一端，并被配置为涡流。另外，将第二导体的一端接地，该第二导体在另一端开放，并被构造为涡流。最后，来自第一导体和第二导体的电磁波辐射到真空室中，在真空室中产生等离子体并处理放置在真空室内的电极上的衬底。

47. 发明授权

US06875307B2 Method and apparatus for plasma processing 失效
公开(公告)号：US06875307B2
公开(公告)日：2005-04-05
申请号：US10060350
申请日：2002-02-01
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.

48. 发明授权

US5916820A Thin film forming method and apparatus 失效
标题翻译：薄膜形成方法和装置
公开(公告)号：US5916820A
公开(公告)日：1999-06-29
申请号：US518307
申请日：1995-08-23
申请人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
发明人： Tomohiro Okumura , Ichiro Nakayama , Yuichiro Yamada , Naoki Suzuki
IPC分类号： C23C14/34 , C23C16/04 , C23C16/507 , C23C16/509 , H01L21/205 , H01L21/3105 , H01L21/316 , H01L21/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/045 , C23C16/507 , C23C16/5096 , H01J37/321 , H01L21/02164 , H01L21/02274 , H01L21/31055 , H01L21/31612 , H01J2237/3327
摘要： A thin film forming method for forming a thin film on a surface of a substrate having a stepped portion due to a difference in level, includes steps of performing first thin film deposition with plasma generated in a processing chamber by applying high-frequency voltages to electrodes, performing thin film shaping with plasma generated in the processing chamber by applying a high-frequency voltage to a coil, and performing second thin film deposition with plasma generated in the processing chamber by applying high-frequency voltages to the electrodes.
摘要翻译：在由于电平差异而在具有阶梯部分的基板的表面上形成薄膜的薄膜形成方法包括以下步骤：通过向电极施加高频电压来在处理室中产生的等离子体进行第一薄膜沉积通过向线圈施加高频电压来对处理室中产生的等离子体进行薄膜成形，并且通过向电极施加高频电压来对处理室中产生的等离子体进行第二薄膜沉积。

49. 发明授权

US09105803B2 Polycrystalline-type solar cell panel and process for production thereof 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US09105803B2
公开(公告)日：2015-08-11
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

50. 发明授权

US08450819B2 Plasma doping method and apparatus thereof 有权
标题翻译：等离子体掺杂方法及其装置
公开(公告)号：US08450819B2
公开(公告)日：2013-05-28
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

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