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1. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

2. 发明申请

US20130183791A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, SOLAR CELL HAVING SAME, AND METHOD FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底，具有该表面的太阳能电池及其制造方法
公开(公告)号：US20130183791A1
公开(公告)日：2013-07-18
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

3. 发明申请

US20050161160A1 Dry etching method and apparatus 审中-公开
公开(公告)号：US20050161160A1
公开(公告)日：2005-07-28
申请号：US11082732
申请日：2005-03-18
申请人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
发明人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01L21/02019 , H01J37/321 , H01J37/32935 , H01L21/30621
摘要： A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.

4. 发明授权

US06893971B2 Dry etching method and apparatus 失效
标题翻译：干蚀刻方法和设备
公开(公告)号：US06893971B2
公开(公告)日：2005-05-17
申请号：US10197465
申请日：2002-07-18
申请人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
发明人： Hiroshi Tanabe , Tomohiro Okumura , Hiroshi Imai
IPC分类号： H01J37/32 , H01L21/306 , H01L21/302
CPC分类号： H01L21/02019 , H01J37/321 , H01J37/32935 , H01L21/30621
摘要： A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.
摘要翻译：提供了能够在基于InP的化合物半导体的衬底上快速进行深蚀刻制造的干蚀刻方法和装置。蚀刻气体从反应室进入并排出，使得室的内部被控制在预定压力以下。然后通过对平面螺旋放电线圈或扁平天线施加至少13.56MHz的高频功率来在反应室中产生等离子体，该平面天线设置成面对放置在基板电极中的基于InP的化合物半导体衬底反应室，并且蚀刻基板，同时控制到达基板的等离子体和离子能量的密度。

5. 发明授权

US5372648A Plasma CVD system 失效
标题翻译：等离子体CVD系统
公开(公告)号：US5372648A
公开(公告)日：1994-12-13
申请号：US54137
申请日：1993-04-30
申请人： Shigeyuki Yamamoto , Yuichiro Yamada , Ryuzoh Hohchin , Hiroshi Tanabe , Tomohiro Okumura
发明人： Shigeyuki Yamamoto , Yuichiro Yamada , Ryuzoh Hohchin , Hiroshi Tanabe , Tomohiro Okumura
IPC分类号： C23C16/46 , C23C16/44 , C23C16/48 , C23C16/50 , C23C16/509 , C23C16/56 , H01L21/31
CPC分类号： C23C16/56 , C23C16/4401 , C23C16/481 , C23C16/5093
摘要： A plasma CVD system has a processing chamber having a thin film forming section, and a transfer section communicating with the thin film forming section through a connecting opening. The system includes a thin film forming device, located in the thin film forming section, for producing plasma to form a thin film on a substrate at the connecting opening, a transfer device, located in the transfer section, for bringing a substrate holding member into and out of the processing chamber, and a heat transfer plate which does not project beyond the edge of the substrate when moved into abutment against a rear face of the substrate held by the substrate holding member to move the substrate from the substrate holding member towards the thin film forming section. The heat transfer plate also conducts heat to the substrate.
摘要翻译：等离子体CVD系统具有具有薄膜形成部的处理室和通过连接口与薄膜形成部连通的转印部。该系统包括薄膜形成装置，位于薄膜形成部分中，用于产生等离子体以在连接开口处的基板上形成薄膜，位于转印部分中的转印装置，用于将基板保持件置于并且处理室中的传热板，以及当移动抵靠基板保持构件保持的基板的后表面时不会突出超过基板边缘的传热板，以将基板从基板保持构件移向薄膜形成部。传热板也将热量传导到基板。

6. 发明授权

US09397242B2 Silicon substrate having textured surface, and process for producing same 有权
标题翻译：具有纹理表面的硅衬底及其制造方法
公开(公告)号：US09397242B2
公开(公告)日：2016-07-19
申请号：US14006357
申请日：2012-03-28
申请人： Yasushi Taniguchi , Shigeru Sankawa, Sr. , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
发明人： Yasushi Taniguchi , Shigeru Sankawa, Sr. , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
IPC分类号： H01L31/0236 , H01L21/306 , H01L29/04
CPC分类号： H01L31/02363 , H01L21/30604 , H01L29/045 , Y02E10/50
摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
摘要翻译：本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

7. 发明申请

US20140020750A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, AND PROCESS FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底及其生产方法
公开(公告)号：US20140020750A1
公开(公告)日：2014-01-23
申请号：US14006357
申请日：2012-03-28
申请人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
发明人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
IPC分类号： H01L31/0236 , H01L21/306 , H01L29/04
CPC分类号： H01L31/02363 , H01L21/30604 , H01L29/045 , Y02E10/50
摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
摘要翻译：本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

8. 发明授权

US08628863B2 Indenopyrene compound and organic light-emitting device using the compound 有权
标题翻译：茚并芘化合物和使用该化合物的有机发光装置
公开(公告)号：US08628863B2
公开(公告)日：2014-01-14
申请号：US13127637
申请日：2009-11-06
申请人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
发明人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
IPC分类号： H01L51/54 , C07C25/22 , C07C13/62 , C07C211/61 , C07D213/16 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04
CPC分类号： C07C25/22 , C07C13/62 , C07C211/61 , C07C2603/18 , C07C2603/24 , C07C2603/26 , C07C2603/40 , C07C2603/48 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D213/06 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , H01L51/0054 , H01L51/0058 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/5092 , H05B33/10
摘要： Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.
摘要翻译：本发明提供一种具有高亮度，高纯度，高效率的光输出的有机发光装置。有机发光器件包括在阳极和阴极之间的有机层，其中阳极和阴极中的一个是透明电极或半透明电极，并且至少一层有机层包含至少一种具有特定结构的茚并芘化合物。

9. 发明申请

US20120186263A1 POWER GENERATION PLANT 有权
标题翻译：发电厂
公开(公告)号：US20120186263A1
公开(公告)日：2012-07-26
申请号：US13354698
申请日：2012-01-20
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： F02C7/22
CPC分类号： F02C3/22 , F02C3/20 , F02C3/30 , F02C7/14 , F02C7/22
摘要： A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.
摘要翻译：包括燃气轮机11的发电厂10; 燃料气体冷却器13; 以及将从燃料气体压缩机12的中间阶段抽出的燃料气体引导到燃料气体冷却器13的抽出管线24; 第一电平检测器61，其检测在燃料气体冷却器13的底部积聚的冷却水位是否达到预定水平; 以及控制器，其基于从第一电平检测器61发送的检测信号停止燃气轮机11，并且输出用于停止向喷嘴44和45供应冷却剂的冷却剂泵53的命令信号。

10. 发明授权

US08151572B2 Method of starting and stopping gas turbine and start-and-stop control device 有权
标题翻译：启动和停止燃气轮机和启停控制装置的方法
公开(公告)号：US08151572B2
公开(公告)日：2012-04-10
申请号：US12442338
申请日：2007-09-19
申请人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
发明人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
IPC分类号： F02C7/22 , F02C7/26
CPC分类号： F02C9/40 , F01D19/00 , F01D21/00 , F02C7/232 , F02C7/26
摘要： An object of the present invention is to provide a method of starting and stopping a gas turbine and a start-and-stop control device, which are capable of solving a problem of a failure in normally igniting a fuel gas due to a purge gas (nitrogen gas) remaining in a fuel gas pipe and thereby igniting the fuel gas stably. For this purpose, the start-and-stop control device performs control at the time of starting the gas turbine by sequentially performing: first exhaust gas duct purge for pushing out a fuel gas remaining in an exhaust gas duct with compressed air from a compressor; fuel gas pipe purge for pushing out nitrogen gas remaining in a fuel gas pipe between a fuel gas shutoff valve and a combustor at the time of stopping the gas turbine by the fuel gas by opening a fuel gas shutoff valve; and second exhaust gas duct purge for pushing out the fuel gas remaining in the exhaust gas duct at the time of the fuel gas pipe purge by the compressed air from the compressor, and then the fuel gas is supplied to the combustor by opening the fuel gas shutoff valve again and ignited.
摘要翻译：本发明的目的是提供一种启动和停止燃气轮机和起动和停止控制装置的方法，其能够解决由于吹扫气体而导致的燃料气体的正常点燃故障的问题（氮气）残留在燃料气体管中，从而稳定地点燃燃料气体。为此，启动和停止控制装置在启动燃气轮机时，通过依次执行以下步骤来执行控制：第一废气管道吹扫，用于从压缩机推出压缩空气中的残留在废气管道中的燃料气体; 用于通过打开燃料气体截止阀，在燃料气体停止燃气轮机时，在燃料气体切断阀和燃烧器之间排出残留在燃料气体管道中的氮气的燃料气体管道吹扫; 以及第二废气管道吹扫，用于在通过来自压缩机的压缩空气吹扫燃料气体管道时推出残留在排气管道中的燃料气体，然后通过打开燃料气体将燃料气体供应到燃烧器关闭阀再次点火。

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