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41. 发明授权

US07674715B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07674715B2
公开(公告)日：2010-03-09
申请号：US12335983
申请日：2008-12-16
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

42. 发明授权

US07465665B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07465665B2
公开(公告)日：2008-12-16
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

43. 发明申请

US20060292874A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20060292874A1
公开(公告)日：2006-12-28
申请号：US11468156
申请日：2006-08-29
申请人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred Mak , Jeong Byun , Lawrence Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

44. 发明授权

US07101795B1 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 有权
$Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer$
标题翻译：使用顺序沉积技术沉积难熔金属层以形成成核层的方法和装置
公开(公告)号：US07101795B1
公开(公告)日：2006-09-05
申请号：US09678266
申请日：2000-10-03
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统特征是使用顺序沉积技术成核基底，其中衬底连续地暴露于第一和第二反应气体，然后使用气相沉积形成层，以使成核层包含在第一和第二反应气体之一中的化合物的大量沉积。

45. 发明授权

US06849545B2 System and method to form a composite film stack utilizing sequential deposition techniques 有权
标题翻译：使用顺序沉积技术形成复合膜堆的系统和方法
公开(公告)号：US06849545B2
公开(公告)日：2005-02-01
申请号：US09885609
申请日：2001-06-20
申请人： Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
发明人： Alfred W. Mak , Mei Chang , Jeong Soo Byun , Hua Chung , Ashok Sinha , Moris Kori
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/28562
摘要： A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.
摘要翻译：一种在基板上形成用于铜触点的层叠阻挡层的系统和方法。衬底连续地暴露于第一和第二反应气体以形成粘附层。然后，粘附层连续地暴露于第三和第四反应气体，形成与粘合层相邻的阻挡层。随后在阻挡层附近沉积铜层。

46. 发明授权

US06270859B1 Plasma treatment of titanium nitride formed by chemical vapor deposition 失效
公开(公告)号：US06270859B1
公开(公告)日：2001-08-07
申请号：US09049856
申请日：1998-03-27
申请人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
发明人： Jun Zhao , Ashok Sinha , Avi Tepman , Mei Chang , Lee Luo , Alex Schreiber , Talex Sajoto , Stefan Wolff , Charles Dornfest , Michal Danek
IPC分类号： C23C1634
摘要： A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.

47. 发明授权

US06189482B1 High temperature, high flow rate chemical vapor deposition apparatus and related methods 失效
标题翻译：高温，高流量化学气相沉积装置及相关方法
公开(公告)号：US06189482B1
公开(公告)日：2001-02-20
申请号：US08799415
申请日：1997-02-12
申请人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
发明人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/52 , H01J37/32082 , H01J2237/2001 , H01J2237/3321
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

48. 发明授权

US6123864A Etch chamber 失效
标题翻译：蚀刻室
公开(公告)号：US6123864A
公开(公告)日：2000-09-26
申请号：US327126
申请日：1994-10-21
申请人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
发明人： Simon W. Tam , Semyon Sherstinsky , Mei Chang , Alan Morrison , Ashok Sinha
IPC分类号： H01L21/687 , H05H1/00
CPC分类号： H01L21/68721 , H01L21/68785 , H01J2237/022
摘要： A conventional plasma etch chamber is modified to reduce particulate generation in the chamber that contaminates the chamber and substrates mounted on a pedestal support being processed therein. A clamping ring cover in the chamber is made of ceramic. Grooves are machined into the cover and metal antennas can be mounted in the grooves to act as a getter for particles and pre-particle, non-volatile contaminants in the chamber. The clamping ring for the substrate being processed is also made of ceramic. Fewer particles are generated by ion bombardment using ceramic versus prior art clamping rings made of aluminum. Further, the cylinder clamping ring support which surrounds the pedestal support is fitted with a plurality of openings or windows to allow escape of purge gases that carry particles through the windows and into the adjoining exhaust system of the chamber and thus also away from the substrate being processed. Markedly fewer particles are deposited onto substrates using the modified plasma etch chamber of the invention than was found for unmodified chambers.
摘要翻译：修改常规等离子体蚀刻室以减少腔室中的颗粒产生，从而污染安装在其中处理的基座支撑件上的腔室和基底。腔室中的夹紧环盖由陶瓷制成。槽被加工成盖子，并且金属天线可以安装在凹槽中，以用作在室中的颗粒和预颗粒，非挥发性污染物的吸气剂。用于被处理的基板的夹紧环也由陶瓷制成。通过使用陶瓷的离子轰击产生的较少的颗粒与由铝制成的现有技术的夹紧环产生。此外，围绕基座支撑件的气缸夹紧环支撑装配有多个开口或窗口，以允许通过窗口携带颗粒的吹扫气体逸出并进入室的相邻排气系统，并且因此也远离基板处理。使用本发明的改进的等离子体蚀刻室，显着减少颗粒沉积到基板上，而不是未修改的室。

49. 发明授权

US5384008A Process and apparatus for full wafer deposition 失效
标题翻译：用于全晶圆沉积的工艺和设备
公开(公告)号：US5384008A
公开(公告)日：1995-01-24
申请号：US79481
申请日：1993-06-18
申请人： Ashok Sinha , Sasson Somekh
发明人： Ashok Sinha , Sasson Somekh
IPC分类号： C23C16/458 , H01L21/00
CPC分类号： H01L21/02087 , C23C16/4583 , H01L21/0209 , H01L21/68735 , H01L21/32136 , Y10S438/905 , Y10S438/928
摘要： A process and apparatus is described for depositing a layer of material over the entire frontside surface of a semiconductor wafer without leaving residues on the backside of said wafer. A semiconductor wafer is placed on the surface of a first wafer support without contacting the frontside surface of the wafer to thereby permit access by deposition materials to the entire frontside surface of the wafer, and then a layer of material is deposited on the entire frontside surface of the semiconductor wafer. To remove any deposits formed on the backside of the wafer during such a deposition, the coated wafer is then placed generally coaxially on the surface of a generally circular second wafer support which will permit access to the outermost portions of the backside of the wafer. In one embodiment the second wafer support is provided with an annular groove coaxially formed in the surface of the second wafer support which faces the backside of the wafer. This annular groove has an outer diameter larger than the diameter of the wafer and an inner diameter smaller than the outer diameter of that portion of the backside of the wafer not containing deposits thereon from the deposition step, so that all of the backside surface containing such depositions is exposed by the groove. The wafer is then etched to remove from the backside any materials deposited thereon during the deposition step, by permitting etchant materials to contact such backside deposits through the annular groove formed in the second wafer support.
摘要翻译：描述了用于在半导体晶片的整个前侧表面上沉积材料层而不在所述晶片的背面留下残留物的方法和装置。将半导体晶片放置在第一晶片支撑体的表面上，而不接触晶片的前侧表面，从而允许通过沉积材料进入晶片的整个前侧表面，然后在整个前侧表面上沉积一层材料的半导体晶片。为了在这样的沉积期间去除形成在晶片背面的任何沉积物，涂覆的晶片然后大致同轴地放置在大致圆形的第二晶片支撑件的表面上，这将允许进入晶片背面的最外部分。在一个实施例中，第二晶片支撑件设置有同轴地形成在面向晶片背面的第二晶片支撑件的表面中的环形槽。该环形槽的外径大于晶片的直径，内径小于晶片背面部分的外径，该晶片的背面不含有从沉积步骤沉积在其上的部分，所以包含这种凹槽露出沉积物。然后在沉积步骤期间，通过允许蚀刻剂材料通过形成在第二晶片支撑件中的环形槽接触这种背面沉积物，从而将晶片从背面剥离出沉积在其上的任何材料。

50. 发明授权

US08083963B2 Removal of process residues on the backside of a substrate 失效
标题翻译：去除衬底背面的工艺残留物
公开(公告)号：US08083963B2
公开(公告)日：2011-12-27
申请号：US11695918
申请日：2007-04-03
申请人： Gerardo A. Delgadino , Indrajit Lahiri , Teh-Tien Su , Sy-Yuan Brian Shieh , Ashok Sinha
发明人： Gerardo A. Delgadino , Indrajit Lahiri , Teh-Tien Su , Sy-Yuan Brian Shieh , Ashok Sinha
IPC分类号： H01L21/461 , C23F1/00
CPC分类号： H01L21/0209
摘要： A substrate is processed in a process chamber comprising a substrate support having a receiving surface for receiving a substrate so that a front surface of the substrate is exposed within the chamber. An energized process gas is used to process the front surface of the substrate. A peripheral edge of the backside surface of the substrate is cleaned by raising the substrate above the receiving surface of the substrate support to a raised position, and exposing the backside surface of the substrate to an energized cleaning gas.
摘要翻译：衬底在包括衬底支撑件的处理室中进行处理，所述衬底支撑件具有用于接收衬底的接收表面，使得衬底的前表面暴露在腔室内。使用赋能的工艺气体来处理衬底的前表面。通过将基板支撑体的接收表面上方的基板升高到升高位置来清洁基板的背面的周边边缘，并且将基板的背面暴露于通电的清洁气体。

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