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41. 发明授权

US06617600B1 Radiation shield device and method 有权
标题翻译：辐射屏蔽装置及方法
公开(公告)号：US06617600B1
公开(公告)日：2003-09-09
申请号：US09505595
申请日：2000-02-16
申请人： Andrew M. Hawryluk , Joe Gortych , Yu Chue Fong
发明人： Andrew M. Hawryluk , Joe Gortych , Yu Chue Fong
IPC分类号： G21F100
CPC分类号： B23K26/706
摘要： A radiation shield device (100) and method, the apparatus comprising either an absorbing shield (130), a scattering shield (200) or an absorbing and scattering shield (300) arranged in a processing tool (50) that irradiates a workpiece (70) with high-irradiance radiation (80) from a light source (78). The processing tool has a tool portion (66) having an irradiance damage threshold (IDT). The radiation shield device is designed to intercept a portion of the high-irradiance radiation that would otherwise be incident the tool portion, and to ensure that radiation exiting the particular shield comprising the radiation shield device and incident the tool portion has an irradiance below the tool portion irradiance damage threshold. The method includes using the radiation shield device in processing a workpiece using a processing tool.
摘要翻译：一种辐射屏蔽装置（100）和方法，该装置包括布置在照射工件（70）的处理工具（50）中的吸收屏蔽（130），散射屏蔽（200）或吸收和散射屏蔽（300））具有来自光源（78）的高辐照度辐射（80）。处理工具具有具有辐照损伤阈值（IDT）的工具部分（66）。辐射屏蔽装置被设计成拦截否则将入射到工具部分的高辐射辐射的一部分，并且确保离开包括辐射屏蔽装置并入射到工具部分的特定屏蔽的辐射在工具下方具有辐照度部分辐照损伤阈值。该方法包括使用辐射屏蔽装置使用加工工具处理工件。

42. 发明授权

US06495390B2 Thermally induced reflectivity switch for laser thermal processing 有权
标题翻译：用于激光热处理的热感应反射开关
公开(公告)号：US06495390B2
公开(公告)日：2002-12-17
申请号：US09940102
申请日：2001-08-27
申请人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
发明人： Andrew M. Hawryluk , Somit Talwar , Yun Wang , Michael O. Thompson
IPC分类号： H01L2100
CPC分类号： B23K26/18 , B23K26/009 , H01L21/268 , H01L21/324
摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region. The reflectivity of the reflectivity switch layer changes from a low reflectivity state to a high reflectivity state at a critical temperature so as to limit the amount of radiation absorbed by the absorber layer by reflecting the incident radiation. This, in turn, limits the amount of heat transferred to the process region from the absorber layer.
摘要翻译：一种用于通过使用热诱导反射率开关层（60）从激光辐射（10）曝光来控制传送到工件（W）的处理区域（30）的热量的方法，装置和系统。本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。吸收层的一部分覆盖工艺区域。吸收层吸收激光辐射并将吸收的辐射转化成热。反射开关层（60）沉积在吸收层顶部。反射开关层可以包括一个或多个薄膜层，并且优选地包括热绝缘体层和过渡层。覆盖处理区域的反射开关层的部分具有对应于处理区域的温度的温度。反射率开关层的反射率在临界温度从低反射率状态变为高反射率状态，以通过反射入射辐射来限制吸收层吸收的辐射量。这反过来限制了从吸收层传递到处理区域的热量。

43. 发明授权

US06303917B1 Radiant energy monitoring apparatuses including a calibration operation and related methods 有权
标题翻译：辐射能量监测装置，包括校准操作和相关方法
公开(公告)号：US06303917B1
公开(公告)日：2001-10-16
申请号：US09311935
申请日：1999-05-14
申请人： Andrew M. Hawryluk
发明人： Andrew M. Hawryluk
IPC分类号： G01J132
CPC分类号： H01L22/26 , G01J1/32
摘要： The invented apparatus can be used to monitor the radiant energy delivered to a substrate for treatment thereof. The radiant energy can be laser light or light generated by a flash-lamp, for example. The apparatus includes an energy-tapping member such as a beam splitter, that is positioned between a source and optical element(s) used to generate and modify radiant energy, and a substrate to be treated with the radiant energy. The energy-tapping member receives radiant energy from the source and optical element(s), and divides the radiant energy from the source and optical element(s) into two portions. The first portion of radiant energy travels from the energy-tapping member to the substrate for treatment thereof. The apparatus includes an energy sensor such as a photodiode, arranged to receive the second portion of radiant energy. The energy sensor generates a signal indicative of the radiant energy supplied to the substrate. The energy-tapping member is preferably positioned optically downstream from the optical element(s) as the last or near last element encountered by the radiant energy. As so positioned, thermal or mechanical drifts in the optical element(s) have little or no impact on the ability of the invented apparatus to determine the amount of radiant energy supplied to the substrate. The apparatus can include a processing unit coupled to receive the sensor signal, which integrates the sensor signal to generate a signal indicative of the amount of radiant energy supplied to the substrate. The processing unit can also generate a visual display of the amount of radiant energy supplied to the substrate. The invention also includes related methods.
摘要翻译：本发明的装置可用于监测传送到基板的辐射能以进行处理。辐射能可以是例如由闪光灯产生的激光或光。该装置包括位于用于产生和修改辐射能的源和光学元件之间的诸如分束器的能量攻丝构件以及将被辐射能量处理的衬底。能量敲击构件从源和光学元件接收辐射能，并且将来自源和光学元件的辐射能分成两部分。辐射能的第一部分从能量攻丝构件移动到基板以进行处理。该装置包括能量传感器，例如光电二极管，被布置成接收辐射能的第二部分。能量传感器产生指示供应给基板的辐射能的信号。能量攻丝构件优选地作为辐射能量遇到的最后或最后一个元件光学地位于光学元件的下游。如此定位，光学元件中的热或机械漂移对本发明设备确定供应到基板的辐射能量的能力几乎没有影响或没有影响。该装置可以包括耦合以接收传感器信号的处理单元，该传感器信号对传感器信号进行积分，以产生指示供应给基板的辐射能量的信号。处理单元还可以产生供应到基板的辐射能量的视觉显示。本发明还包括相关方法。

44. 发明授权

US5745286A Forming aspheric optics by controlled deposition 失效
标题翻译：通过控制沉积形成非球面光学
公开(公告)号：US5745286A
公开(公告)日：1998-04-28
申请号：US542758
申请日：1995-10-13
申请人： Andrew M. Hawryluk
发明人： Andrew M. Hawryluk
IPC分类号： G02B3/02 , G02B5/10 , G02B5/08 , G02B1/10
CPC分类号： G02B3/02 , G02B5/10
摘要： An aspheric optical element formed by depositing material onto a spherical surface of an optical element by controlled deposition to form an aspheric surface of desired shape. A reflecting surface, single or multi-layer, can then be formed on the aspheric surface by evaporative or sputtering techniques. Aspheric optical elements are suitable for deep ultra-violet (UV) and x-ray wavelengths. The reflecting surface may, for example, be a thin (.about.100 nm) layer of aluminum, or in some cases the deposited modifying layer may function as the reflecting surface. For certain applications, multi-layer reflective surfaces may be utilized, such as chromium-carbon or tungsten-carbon multi-layer, with the number of layers and thickness being determined by the intended application.
摘要翻译：通过控制沉积将材料沉积到光学元件的球形表面上以形成所需形状的非球面形成的非球面光学元件。然后可以通过蒸发或溅射技术在非球面上形成单层或多层的反射表面。非球面光学元件适用于深紫外（UV）和x射线波长。反射表面可以例如是铝（DIFFERENCE 100nm）的薄层，或者在一些情况下，沉积的修饰层可以用作反射表面。对于某些应用，可以使用多层反射表面，例如铬碳或钨 - 碳多层，层数和厚度由预期应用确定。

45. 发明授权

US09490128B2 Non-melt thin-wafer laser thermal annealing methods 有权
标题翻译：非熔化薄晶片激光热退火方法
公开(公告)号：US09490128B2
公开(公告)日：2016-11-08
申请号：US13595873
申请日：2012-08-27
申请人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
发明人： Yun Wang , Andrew M. Hawryluk , Xiaoru Wang , Xiaohua Shen
IPC分类号： H01L21/268 , H01L27/146 , H01L21/02 , H01L21/285
CPC分类号： H01L21/268 , H01L21/02107 , H01L21/28518 , H01L27/14634 , H01L27/1469
摘要： Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.
摘要翻译：公开了薄半导体晶片的退火方法。该方法允许对薄半导体晶片的一侧进行高温退火，而不会损坏或过热晶片另一侧或嵌入晶片内的热敏电子器件特征。在低于晶片的熔点的温度下进行退火，使得在退火过程中不会发生显着的掺杂剂再分布。该方法可用于活化掺杂剂或形成欧姆接触。

46. 发明授权

US08781213B2 Optical alignment systems for forming LEDs having a rough surface 失效
标题翻译：用于形成具有粗糙表面的LED的光学对准系统
公开(公告)号：US08781213B2
公开(公告)日：2014-07-15
申请号：US13302308
申请日：2011-11-22
申请人： Robert L. Hsieh , Khiem Nguyen , Warren W. Flack , Andrew M. Hawryluk
发明人： Robert L. Hsieh , Khiem Nguyen , Warren W. Flack , Andrew M. Hawryluk
IPC分类号： G06K9/00 , G03F9/00 , H01L33/22
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λLED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σS. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.
摘要翻译：公开了一种用于在光刻制造具有LED波长λLED的LED的晶片时对准晶片的对准系统。该系统包括晶片。晶片具有粗糙的对准标记，均方根（RMS）表面粗糙度S。该系统具有配置为用掩模版对准标记的图像叠加掩模版对准标记的图像的透镜。粗糙的对准标记图像由波长λA为约2＆Sgr; S至约8＆Sgr; S的对准光形成。图像传感器检测叠加图像。图像处理单元处理检测到的叠加图像以测量晶片和标线片之间的对准偏移。

47. 发明申请

US20140097171A1 Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication 有权
标题翻译：在集成电路制造中具有降低图案密度效应的超快速激光退火
公开(公告)号：US20140097171A1
公开(公告)日：2014-04-10
申请号：US13646673
申请日：2012-10-06
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L21/428 , B23K26/18 , B23K26/12 , B23K26/08 , B23K26/06
CPC分类号： B23K26/127 , B23K26/0006 , B23K26/034 , B23K26/0608 , B23K26/0622 , B23K26/0738 , B23K26/0853 , B23K26/18 , B23K26/354 , B23K2103/56 , H01L21/268 , H01L21/28035 , H01L21/324
摘要： Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature Tnonmelt that is within about 400° C. of the melt temperature Tmelt. The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.
摘要翻译：公开了以降低集成电路制造中的图案密度效应的方式进行超快速激光退火的系统和方法。该方法包括在衬底的图案化表面上扫描至少一个第一激光束。至少一个第一激光束被配置为将图案化表面加热到熔融温度Tmelt在约400℃以内的非熔融温度Tnonmelt。该方法还包括在图案化表面上并相对于第一激光束扫描至少一个第二激光束。所述至少一个第二激光束是脉冲的并且被配置为将图案化表面从由至少一个第一激光束提供的非熔化温度加热至熔融温度。

48. 发明申请

US20140049978A1 LED-based photolithographic illuminator with high collection efficiency 有权
标题翻译：基于LED的光刻照明器，收集效率高
公开(公告)号：US20140049978A1
公开(公告)日：2014-02-20
申请号：US13588750
申请日：2012-08-17
申请人： David G. Stites , Andrew M. Hawryluk
发明人： David G. Stites , Andrew M. Hawryluk
IPC分类号： F21V5/04
CPC分类号： G03F7/201 , G03F7/70391 , H01L25/0753 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/−2%.
摘要翻译：公开了一种具有高收集效率的基于LED的光刻照明器。照明器利用一系列LED，其中每个LED具有LED管芯和散热器。将LED管芯成像到均质棒的输入端上，以基本上覆盖输入端，而不包括LED的非发光散热片部分。使用微透镜阵列对LED管芯进行成像。照明器的收集效率优于50％，光均质器输出端的照明均匀度在+/- 2％以内。

49. 发明授权

US08592309B2 Laser spike annealing for GaN LEDs 有权
标题翻译： GaN LED激光尖峰退火
公开(公告)号：US08592309B2
公开(公告)日：2013-11-26
申请号：US12590360
申请日：2009-11-06
申请人： Yun Wang , Andrew M. Hawryluk
发明人： Yun Wang , Andrew M. Hawryluk
IPC分类号： H01L21/44
CPC分类号： H01L33/0095 , H01L33/007 , H01L33/025 , H01L33/42
摘要： Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.
摘要翻译：公开了在形成氮化镓（GaN）发光二极管（LED）以及使用LSA形成的GaN LED中执行激光尖峰退火（LSA）的方法。一种示例性方法包括在衬底上形成具有n-GaN层的GaN多层结构和夹持有源层的p-GaN层。该方法还包括通过在p-GaN层上扫描激光束来执行LSA。所述方法还包括在所述GaN多层结构顶部形成透明导电层，以及向所述n-GaN层向所述透明导电层添加p接触和n接触。所得GaN LED具有增强的输出功率，较低的导通电压和降低的串联电阻。

50. 发明申请

US20120223062A1 Minimization of Surface Reflectivity 审中-公开
标题翻译：最小化表面反射率
公开(公告)号：US20120223062A1
公开(公告)日：2012-09-06
申请号：US13472383
申请日：2012-05-15
申请人： Andrew M. Hawryluk
发明人： Andrew M. Hawryluk
IPC分类号： H01L21/268 , B23K26/00
CPC分类号： H01L21/268 , B23K26/0738 , B23K26/0853 , B23K26/352 , B23K26/354 , B23K2101/40 , H01L21/28044
摘要： Apparatuses and methods are provided for processing a surface of a substrate. The substrate may have a surface pattern that exhibits directionally and/or orientationally different reflectivities relative to radiation of a selected wavelength and polarization. The apparatus may include a radiation source that emits a photonic beam of the selected wavelength and polarization directed toward the surface at orientation angle and incidence angle selected to substantially minimize substrate surface reflectivity variations and/or minimize the maximum substrate surface reflectivity during scanning. Also provided are methods and apparatuses for selecting an optimal orientation and/or incidence angle for processing a surface of a substrate.
摘要翻译：提供了用于处理基底表面的装置和方法。衬底可以具有相对于所选波长和偏振的辐射呈现方向和/或取向不同的反射率的表面图案。该装置可以包括发射所选波长的光子束的辐射源，并且以定向角和入射角定位朝向表面的极化，其被选择为基本上最小化衬底表面反射率变化和/或最小化扫描期间的最大衬底表面反射率。还提供了用于选择用于处理衬底的表面的最佳取向和/或入射角的方法和装置。

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