专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07405416B2 Method and apparatus for EUV plasma source target delivery 有权
标题翻译：用于EUV等离子体源目标传递的方法和装置
公开(公告)号：US07405416B2
公开(公告)日：2008-07-29
申请号：US11067124
申请日：2005-02-25
申请人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
发明人： J. Martin Algots , Igor V. Fomenkov , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Oscar Hemberg , Alexander N. Bykanov , Dennis W. Cobb
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006
摘要： An EUV plasma formation target delivery system and method is disclosed which may comprise: a target droplet formation mechanism comprising a magneto-restrictive or electro-restrictive material, a liquid plasma source material passageway terminating in an output orifice; a charging mechanism applying charge to a droplet forming jet stream or to individual droplets exiting the passageway along a selected path; a droplet deflector intermediate the output orifice and a plasma initiation site periodically deflecting droplets from the selected path, a liquid target material delivery mechanism comprising a liquid target material delivery passage having an input opening and an output orifice; an electromotive disturbing force generating mechanism generating a disturbing force within the liquid target material, a liquid target delivery droplet formation mechanism having an output orifice; and/or a wetting barrier around the periphery of the output orifice.
摘要翻译：公开了一种EUV等离子体形成靶递送系统和方法，其可以包括：目标液滴形成机构，其包括磁阻或电子限制材料，终止于输出孔的液体等离子体源材料通道; 将电荷施加到液滴形成喷射流或沿着选定路径离开通道的各个液滴的充电机构; 在输出孔之间的液滴偏转器和等离子体引发位置周期性地偏转来自所选择的路径的液滴;液体靶材料输送机构，包括具有输入开口和输出孔的液体靶材料输送通道; 产生在液体目标材料内的干扰力的电动干扰力产生机构，具有输出孔的液体目标传送液滴形成机构; 和/或围绕输出孔周边的润湿屏障。

42. 发明授权

US07180083B2 EUV light source collector erosion mitigation 有权
标题翻译： EUV光源收集器侵蚀减轻
公开(公告)号：US07180083B2
公开(公告)日：2007-02-20
申请号：US11238828
申请日：2005-09-28
申请人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov
发明人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov
IPC分类号： A61N5/06 , G01J3/10 , H05G2/00
CPC分类号： G03F7/70916 , B82Y10/00 , G01J1/429 , G03F7/70033 , G03F7/70175 , G03F7/70983 , G21K1/062 , G21K2201/067 , H05G2/003
摘要： An EUV light source collector erosion mitigation system and method is disclosed which may comprise a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma; a replacement material generator positioned to deliver replacement material comprising the capping material to the collector outer surface at a rate sufficient to replace the capping material removed due to the removing interaction. The replacement material generator may comprise a plurality of replacement material generators positioned to respectively deliver replacement material to a selected portion of the collector outer surface, which may comprise a sputtering mechanism sputtering replacement capping material onto the collector outer surface.
摘要翻译：公开了一种EUV光源收集器侵蚀缓解系统和方法，其可以包括收集器，其包括多层反射镜收集器，该多层反射镜收集器包括由封装材料构成的收集器外表面，该封盖材料由于与EUV发光等离子体中产生的材料的去除相互作用而被去除 ; 替代材料发生器定位成将包含封盖材料的替换材料以足以代替由于去除相互作用而去除的封盖材料的速率传送到收集器外表面。替代材料发生器可以包括多个替换材料发生器，其被定位成分别将替代材料递送到集电器外表面的选定部分，其可以包括溅射机构将溅射替换封盖材料涂覆到集电器外表面上。

43. 发明授权

US07154928B2 Laser output beam wavefront splitter for bandwidth spectrum control 有权
标题翻译：激光输出光束波前分离器，用于带宽频谱控制
公开(公告)号：US07154928B2
公开(公告)日：2006-12-26
申请号：US10875662
申请日：2004-06-23
申请人： Richard L. Sandstrom , Daniel J. W. Brown , Alexander I. Ershov , Igor V. Fomenkov , William N. Partlo
发明人： Richard L. Sandstrom , Daniel J. W. Brown , Alexander I. Ershov , Igor V. Fomenkov , William N. Partlo
IPC分类号： H01S3/22 , H01S3/223
CPC分类号： H01S3/0812 , G03F7/70025 , G03F7/70575 , H01S3/08059 , H01S3/097 , H01S3/1055 , H01S3/1305
摘要： Apparatus/method providing bandwidth control in narrow band short pulse duration gas discharge laser output light pulse beam producing systems, producing a beam comprising pulses at selected pulse repetition races, e.g., comprising a dispersive bandwidth selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the beam containing the respective pulse on the optic; a tuning mechanism operative to select at least one angle of incidence of the beam containing the respective pulse upon the optic; the tuning mechanism comprising a plurality of incidence angle selection elements each defining an angle of incidence for a different spatially separated but not temporally separated portion of the pulse to return from the optic a laser light pulse comprising a plurality of spatially separated but not temporally separated portions, each having one of at least two different selected center wavelengths.
摘要翻译：在窄带短脉冲持续时间气体放电激光输出光脉冲光束产生系统中提供带宽控制的装置/方法，产生包括选定的脉冲重复轨迹的脉冲的波束，例如包括色散带宽选择光学器件，用于为每个脉冲选择至少一个中心波长至少部分地由在光学元件上包含相应脉冲的光束的入射角确定; 调谐机构，用于选择在光学元件上包含相应脉冲的光束的至少一个入射角; 所述调谐机构包括多个入射角选择元件，每个入射角选择元件限定所述脉冲的不同的空间分离但不是时间上分离的部分的入射角，以从所述光学器件返回包括多个空间分离但不时间分离的部分的激光脉冲每个具有至少两个不同选择的中心波长中的一个。

44. 发明授权

US07141806B1 EUV light source collector erosion mitigation 有权
标题翻译： EUV光源收集器侵蚀减轻
公开(公告)号：US07141806B1
公开(公告)日：2006-11-28
申请号：US11237649
申请日：2005-09-27
申请人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
发明人： William N. Partlo , Alexander I. Ershov , Igor V. Fomenkov , David W. Myers , William Oldham
IPC分类号： G01J1/00
CPC分类号： G21K1/062 , B82Y10/00 , H05G2/003 , H05G2/005
摘要： An EUV light source collector erosion mitigation method and apparatus for a collector comprising a multilayered mirror collector comprising a collector outer surface composed of a capping material subject to removal due to a removing interaction with materials created in an EUV light-creating plasma, is disclosed which may comprise including within an EUV plasma source material a replacement material. The replacement material may comprise the same material as the capping material of the multilayered mirror. The replacement material may comprise a material that is essentially transparent to light in a selected band of EUV light, e.g., a spectrum of EUV light generated in a plasma of a plasma source material. The replacement material may comprise a material not susceptible to being etched by an etching material used to remove deposited plasma source material from the collector, e.g., a halogen etchant.
摘要翻译：公开了一种用于收集器的EUV光源收集器侵蚀缓解方法和装置，其包括多层反射镜收集器，其包括由由与在EUV发光等离子体中产生的材料的去除相互作用而被去除的封盖材料组成的收集器外表面。可以包括在EUV等离子体源材料内包括替换材料。替代材料可以包括与多层反射镜的封盖材料相同的材料。替代材料可以包括对EUV光的选定频带中的光基本上透明的材料，例如在等离子体源材料的等离子体中产生的EUV光的光谱。替代材料可以包括不易被蚀刻材料蚀刻的材料，用于从集电体例如卤素蚀刻剂去除沉积的等离子体源材料。

45. 发明授权

US07061961B2 Very narrow band, two chamber, high rep-rate gas discharge laser system 有权
公开(公告)号：US07061961B2
公开(公告)日：2006-06-13
申请号：US11199691
申请日：2005-08-09
申请人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
发明人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scot T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号： H01S3/22
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output light pulse beam pulse produced by said gas discharge laser system by controlling the timing of the occurrence of the gas discharge between the first pair of electrodes and the occurrence of the gas discharge between the second pair of electrodes.

46. 发明授权

US06625191B2 Very narrow band, two chamber, high rep rate gas discharge laser system 有权
公开(公告)号：US06625191B2
公开(公告)日：2003-09-23
申请号：US10012002
申请日：2001-11-30
申请人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
发明人： David S. Knowles , Daniel J. W. Brown , Herve A. Besaucele , David W. Myers , Alexander I. Ershov , William N. Partlo , Richard L. Sandstrom , Palash P. Das , Stuart L. Anderson , Igor V. Fomenkov , Richard C. Ujazdowski , Eckehard D. Onkels , Richard M. Ness , Scott T. Smith , William G. Hulburd , Jeffrey Oicles
IPC分类号： H01S322
CPC分类号： G01J1/4257 , G03F7/70025 , G03F7/70041 , G03F7/70333 , G03F7/70483 , G03F7/70575 , G03F7/70933 , H01S3/005 , H01S3/0057 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/0387 , H01S3/0404 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1055 , H01S3/1305 , H01S3/134 , H01S3/137 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2333 , H01S3/2366
摘要： An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses. The master oscillator is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.

47. 发明授权

US06590922B2 Injection seeded F2 laser with line selection and discrimination 失效
公开(公告)号：US06590922B2
公开(公告)日：2003-07-08
申请号：US09879311
申请日：2001-06-12
申请人： Eckehard D. Onkels , Richard L. Sandstrom , Richard M. Ness , William N. Partlo , Alexander I. Ershov , Choonghoon Oh
发明人： Eckehard D. Onkels , Richard L. Sandstrom , Richard M. Ness , William N. Partlo , Alexander I. Ershov , Choonghoon Oh
IPC分类号： H01S322
CPC分类号： G03F7/70575 , G03F7/70025 , G03F7/70041 , G03F7/70483 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/082 , H01S3/0835 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/10092 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2258 , H01S3/2325 , H01S3/2366
摘要： A narrow band F2 laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed beam at a first narrow wavelength range corresponding to a first natural emission line of the F2 laser system. This beam is injected into the gain medium of the second laser subsystem in a first direction where the beam is amplified to produce a narrow band pulsed output beam. The seed laser subsystem also produces a second pulsed beam at a second wavelength range corresponding to a second natural emission line of the F2 laser. This line is injected into the gain medium of the second laser subsystem in a second direction opposite said first direction. The second beam is amplified in the gain medium of the second laser subsystem depleting the gain medium of gain potential at the second wavelength range. (This amplified second beam is preferably wasted.) With the gain potential at the second undesired wavelength the range thus reduced the portion of light at the second wavelength range in the output beam is greatly reduced.

48. 发明授权

US06480275B2 High resolution etalon-grating monochromator 有权
标题翻译：高分辨率标准光栅单色仪
公开(公告)号：US06480275B2
公开(公告)日：2002-11-12
申请号：US09772293
申请日：2001-01-29
申请人： Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith
发明人： Richard L. Sandstrom , Alexander I. Ershov , William N. Partlo , Igor V. Fomenkov , Scott T. Smith
IPC分类号： G01J318
CPC分类号： G01J3/12 , G01J1/4257 , G01J3/22 , G01J3/26 , G01J9/02
摘要： A high resolution etalon-grating monochromator. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.034 pm (FWHM) and about 0.091 pm (95 percent integral). The bandwidth of a laser beam can be measured very accurately by a directing portion of the laser beam into the monochromator and scanning the laser wavelength over a range which includes the monochromator slit wavelength.
摘要翻译：高分辨率标准光栅单色仪。优选的实施例在紫外范围内呈现非常狭窄的狭缝功能，并且对于测量用于集成电路光刻的窄带准分子激光器的带宽是非常有用的。来自激光的光被聚焦成漫射器，并且离开扩散器的漫射光照射标准具。将其从标准具出射的光的一部分收集并引导到位于标准具的边缘图案处的狭缝中。通过狭缝的光线被准直，并且准直光照射位于大约Littrow配置中的光栅，其根据波长散发光。表示对应于所选择的标准具条纹的波长的调度光的一部分通过第二狭缝并由光检测器监视。当标准具和光栅调谐到相同的精确波长时，定义狭缝功能，其极窄，例如约0.034μm（FWHM）和约0.091μm（95％积分）。激光束的带宽可以通过激光束的引导部分进入单色仪并且在包括单色器狭缝波长的范围内扫描激光波长而被非常精确地测量。

49. 发明授权

US06381257B1 Very narrow band injection seeded F2 lithography laser 失效
标题翻译：非常窄带注入种子F2光刻激光
公开(公告)号：US06381257B1
公开(公告)日：2002-04-30
申请号：US09473795
申请日：1999-12-28
申请人： Alexander I. Ershov , Eckehard D. Onkels , Palash P. Das , William N. Partlo , Thomas Hofmann
发明人： Alexander I. Ershov , Eckehard D. Onkels , Palash P. Das , William N. Partlo , Thomas Hofmann
IPC分类号： H01S322
CPC分类号： H01S3/10092 , G03F7/70025 , G03F7/70041 , G03F7/70483 , G03F7/70575 , H01S3/03 , H01S3/036 , H01S3/0385 , H01S3/08004 , H01S3/08009 , H01S3/0943 , H01S3/097 , H01S3/09705 , H01S3/0971 , H01S3/139 , H01S3/223 , H01S3/225 , H01S3/2258 , H01S3/2308 , H01S3/2325 , H01S3/2333 , H01S3/2366
摘要： A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.
摘要翻译：可调式注入种子非常窄的F2光刻激光。激光器将现有技术的长寿命可靠光刻激光器的模块化设计特征与特殊技术相结合，以产生在第一增益介质中操作的种子束，该光束用于在第二增益介质中刺激窄带激光，以产生非常窄的带状激光束适用于集成电路光刻。在优选实施例中，使用两个可调谐的标准具输出耦合器来使F2激光器窄带化，种子激光器的输出在F2放大器中被放大。

50. 发明授权

US5991324A Reliable. modular, production quality narrow-band KRF excimer laser 失效
标题翻译：可靠。模块化，生产质量好的窄带KRF准分子激光器
公开(公告)号：US5991324A
公开(公告)日：1999-11-23
申请号：US41474
申请日：1998-03-11
申请人： David S. Knowles , James H. Azzola , Herve A. Besaucele , Palash P. Das , Alexander I. Ershov , Igor V. Fomenkov , Tibor Juhasz , Robert G. Ozarski , William N. Partlo , Daniel A. Rothweil , Richard L. Sandstrom , Richard C. Ujazdowski , Tom A. Watson , Richard M. Ness
发明人： David S. Knowles , James H. Azzola , Herve A. Besaucele , Palash P. Das , Alexander I. Ershov , Igor V. Fomenkov , Tibor Juhasz , Robert G. Ozarski , William N. Partlo , Daniel A. Rothweil , Richard L. Sandstrom , Richard C. Ujazdowski , Tom A. Watson , Richard M. Ness
IPC分类号： H01S3/038 , G03F7/20 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/1055 , H01S3/139 , H01S3/225 , H01S3/22
CPC分类号： G01J9/0246 , G03F7/70025 , G03F7/70041 , G03F7/70358 , G03F7/70558 , G03F7/70575 , H01S3/02 , H01S3/03 , H01S3/036 , H01S3/0971 , H01S3/1055 , H01S3/225 , H01S3/1392
摘要： A reliable, modular, production quality narrow-band KrF excimer laser capable of producing 10 mJ laser pulses at 1000 Hz with a bandwidth of about 0.6 pm or less. The present invention is especially suited to long-term round-the-clock operation in the lithographic production of integrated circuits. Improvements over prior art lasers include a single upstream preionizer tube and acoustic baffles. A preferred embodiment includes reduced fluorine concentration, an anode support bar shaped to reduce aerodynamic reaction forces on blower bearings, a modified pulse power system providing faster pulse rise time, an output coupler with substantially increased reflectivity, a line narrowing module with CaF prism beam expanders, a more accurate wavemeter, a laser computer controller programmed with new and improved pulse energy control algorithm.
摘要翻译：一种可靠，模块化，生产质量好的窄带KrF准分子激光器，能够以1000Hz的频率产生10mJ的激光脉冲，带宽约为0.6μm或更小。本发明特别适用于集成电路的平版印刷生产中的长期全天候操作。现有技术的激光器的改进包括单个上游预分解器管和声学挡板。优选的实施例包括减少的氟浓度，阳极支撑杆形状以减小鼓风机轴承上的空气动力反作用力，改进的脉冲电源系统提供更快的脉冲上升时间，输出耦合器具有显着增加的反射率，具有CaF棱镜扩束器的线窄化模块，更准确的波长计，激光计算机控制器编程，具有新的改进的脉冲能量控制算法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式