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41. 发明申请

US20110306743A1 NOVEL CROSSLINKED HEXAARYL BISIMIDAZOLE COMPOUND AND DERIVATIVE THEREOF, METHOD FOR PRODUCING THE COMPOUND AND PRECURSOR COMPOUND TO BE USED IN THE PRODUCTION METHOD 审中-公开
标题翻译：新型交联的十六烷基双嘧啶酮化合物及其衍生物，用于生产在生产方法中使用的化合物和前体化合物的方法
公开(公告)号：US20110306743A1
公开(公告)日：2011-12-15
申请号：US13131863
申请日：2009-11-24
申请人： Jiro Abe , Yuta Kishimoto , Daisuke Kato , Atsushi Kimoto
发明人： Jiro Abe , Yuta Kishimoto , Daisuke Kato , Atsushi Kimoto
IPC分类号： C08F4/04 , C07D403/14 , C07D403/10 , C07D233/64 , C07F7/18
CPC分类号： G03C1/73 , C07D233/58 , C09K9/02 , C09K2211/1044
摘要： Provided is a crosslinked hexaaryl bisimidazole compound which can achieve photochromic characteristics, i.e., visually showing decoloring simultaneously with the stop of light irradiation and enables precise control of color tone, density and so on in coloring. Also provided are a method for producing the aforesaid compound whereby the degrees of freedom in molecular design and synthesis can be increased, and a precursor compound to be used in the production method.
摘要翻译：本发明提供一种交联的六芳基双咪唑化合物，其可以实现光致变色特性，即在光照射停止的同时目视显色脱色，能够精确控制着色中的色调，密度等。还提供了制备上述化合物的方法，由此可以提高分子设计和合成的自由度，以及在制备方法中使用的前体化合物。

42. 发明申请

US20110133413A1 PROPELLER SHAFT APPARATUS 审中-公开
标题翻译：螺旋桨轴装置
公开(公告)号：US20110133413A1
公开(公告)日：2011-06-09
申请号：US12795651
申请日：2010-06-07
申请人： Daisuke Kato , Tomoya Kondoh
发明人： Daisuke Kato , Tomoya Kondoh
IPC分类号： F16J15/32
CPC分类号： F16J15/3232 , F16C19/06 , F16C27/066 , F16C33/76 , F16C2326/06
摘要： In a propeller shaft apparatus in which a propeller shaft is supported by a support mechanism via a bearing, and the bearing is sealed from an external environment by a dust seal attached to an inner periphery of the support mechanism and coming into sliding contact with an outer periphery of the propeller shaft, the dust seal includes at least first and second lips extending to both sides in an axial direction, an inner diameter of a leading end of one lip of the first and second lips is made smaller than an inner diameter of a leading end of the other lip, and a cross sectional area of the one lip is made larger than a cross sectional area of the other lip.
摘要翻译：在螺旋桨轴装置中，传动轴通过轴承被支撑机构支撑，轴承通过安装在支撑机构的内周上的防尘密封件与外部环境密封并与外部的外部滑动接触螺旋桨轴的周边，防尘密封件至少包括沿轴向方向延伸到两侧的第一和第二唇缘，使得第一和第二唇缘的一个唇缘的前端的内径小于另一个唇缘的前端，使一个唇缘的横截面面积大于另一唇的横截面面积。

43. 发明申请

US20090022314A1 INFORMATION PROCESSING DEVICE, READ TERMINAL, NON-PUBLIC INFORMATION READ SYSTEM, NON-PUBLIC INFORMATION READ METHOD, INFORMATION PROCESSING PROGRAM, AND NON-PUBLIC INFORMATION READ PROGRAM 审中-公开
标题翻译：信息处理设备，阅读终端，非公开信息阅读系统，非公开信息阅读方法，信息处理程序和非公开信息阅读程序
公开(公告)号：US20090022314A1
公开(公告)日：2009-01-22
申请号：US11815603
申请日：2006-02-09
申请人： Teruyuki Wada , Kazuhiko Yanagawa , Takeharu Ozawa , Daisuke Kato
发明人： Teruyuki Wada , Kazuhiko Yanagawa , Takeharu Ozawa , Daisuke Kato
IPC分类号： H04N1/419
CPC分类号： G06K17/00 , H04L9/3226
摘要： In a personal information access system 1, a bar-code information output 106 of an information processing device 10 makes bar-code information by associating personal information with term information defining a valid period of the personal information, a password, and terminal-identification information unique to an access terminal 20 permitted to gain access, and the bar-code information is printed on a paper medium M. The access terminal 20 displays only the personal information permitted to output by an output controller 204, on a display part 205. When the personal information is bar-coded with the valid period being set, in addition to encryption, the security level of personal information is synergistically enhanced and it is feasible to ensure prevention of leakage of personal information to third parties.
摘要翻译：在个人信息访问系统1中，信息处理装置10的条形码信息输出106通过将个人信息与定义个人信息的有效期限，密码和终端识别信息的术语信息相关联来产生条形码信息访问终端20是唯一允许访问的，并且条形码信息被打印在纸媒体M上。接入终端20仅在显示部分205上显示由输出控制器204允许输出的个人信息。当个人信息是按照有效期设定的，除了加密之外，个人信息的安全级别协同增强，确保个人信息泄漏到第三方是可行的。

44. 发明申请

US20080031065A1 SEMICONDUCTOR MEMORY DEVICE WITH COLUMN TO BE SELECTED BY BIT LINE SELECTION SIGNAL 审中-公开
标题翻译：具有通过位线选择信号选择的列的半导体存储器件
公开(公告)号：US20080031065A1
公开(公告)日：2008-02-07
申请号：US11865398
申请日：2007-10-01
申请人： Yasuyuki KAJITANI , Daisuke Kato , Mariko Kaku
发明人： Yasuyuki KAJITANI , Daisuke Kato , Mariko Kaku
IPC分类号： G11C7/02
CPC分类号： G11C11/4087 , G11C7/08 , G11C11/4091 , G11C29/808 , G11C2207/002
摘要： A sense amplifier bank contains sense amplifier circuits, data line pairs and selection circuits. The selection circuits set one of a connection status and a disconnection status between a bit line pair and the data line pair in accordance with a bit line selection signal. A control circuit controls the bit line selection signal supplied to the selection circuits. A global bit line selection signal line is connected to the control circuit, and receives the bit line section signal therefrom. Drive circuits, input portions of which are connected to the global bit line selection signal line, drive the bit line selection signal supplied to the global bit line selection signal line and output it, and the drive circuits are arranged within the sense amplifier bank. A local bit line selection signal line supplies the bit line selection signal driven by the drive circuit to the selection circuit.
摘要翻译：读出放大器组包含读出放大器电路，数据线对和选择电路。选择电路根据位线选择信号设置位线对和数据线对之间的连接状态和断开状态之一。控制电路控制提供给选择电路的位线选择信号。全局位线选择信号线连接到控制电路，并从其接收位线部分信号。驱动电路，其输入部分连接到全局位线选择信号线，驱动提供给全局位线选择信号线的位线选择信号并将其输出，驱动电路被布置在读出放大器组内。局部位线选择信号线将由驱动电路驱动的位线选择信号提供给选择电路。

45. 发明授权

US07251176B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07251176B2
公开(公告)日：2007-07-31
申请号：US11490234
申请日：2006-07-21
申请人： Yasuyuki Kajitani , Daisuke Kato
发明人： Yasuyuki Kajitani , Daisuke Kato
IPC分类号： G11C7/02
CPC分类号： G11C29/50008 , G11C7/08 , G11C7/12 , G11C7/18 , G11C7/22 , G11C11/4074 , G11C11/4076 , G11C11/4085 , G11C11/4091 , G11C11/4094 , G11C11/4097 , G11C2207/002 , G11C2207/005 , G11C2207/065 , G11C2207/2281 , G11C2207/229 , H01L27/0207 , H01L27/10897
摘要： A semiconductor memory device includes a memory cell array which has a plurality of memory cells, a plurality of first bit line pairs which transfer data among the memory cells, a plurality of second bit line pairs disposed corresponding to the plurality of first bit line pairs, a plurality of variable resistance elements disposed to connect the plurality of first bit line pairs to the plurality of second bit line pairs, a plurality of data line pairs disposed corresponding to the plurality of second bit line pairs, a plurality of input/output gates which transfer data between the plurality of second bit line pairs and the plurality of data line pairs, a plurality of sense amplifier circuits which amplify data transferred to the plurality of second bit line pairs, and a bit line isolation control circuit which controls resistance values of the plurality of variable resistance elements.
摘要翻译：一种半导体存储器件包括具有多个存储单元的存储单元阵列，在存储单元之间传送数据的多个第一位线对，对应于多个第一位线对设置的多个第二位线对，设置成将多个第一位线对连接到多个第二位线对的多个可变电阻元件，对应于多个第二位线对设置的多个数据线对，多个输入/输出门，在所述多个第二位线对和所述多个数据线对之间传送数据，放大传送到所述多个第二位线对的数据的多个读出放大器电路以及控制所述多个第二位线对的电阻值的位线隔离控制电路多个可变电阻元件。

46. 发明申请

US20060216695A1 Diluent for norovirus or sapovirus specimen and method for detecting virus 有权
标题翻译：稀释剂用于诺如病毒或者玻璃体病毒标本和病毒检测方法
公开(公告)号：US20060216695A1
公开(公告)日：2006-09-28
申请号：US10551548
申请日：2004-03-31
申请人： Kunio Kamata , Daisuke Kato
发明人： Kunio Kamata , Daisuke Kato
IPC分类号： C12Q1/70
CPC分类号： G01N33/56983 , G01N33/52
摘要： The present invention relates to a diluent for a Norovirus or Sapovirus specimen, the diluent containing an alkaline buffer of pH 9.0 to 10.0, and to a method for detecting a Norovirus or a Sapovirus through use of the diluent. According to the present invention, a Norovirus or a Sapovirus can be detected in a Norovirus- or Sapovirus-containing specimen such as stool, vomit, body fluid, blood, body tissue, or food, in a convenient manner without use of a special machine such as a centrifuge, with an improved detection sensitivity, and with complete elimination of non-specific factors.
摘要翻译：本发明涉及用于诺如病毒或曙红病毒标本的稀释剂，含有pH 9.0至10.0的碱性缓冲液的稀释剂以及通过使用稀释剂检测诺如病毒或唾液病毒的方法。根据本发明，在不使用特殊机器的情况下，可以在含有诺如病毒或札幌病毒的样本例如粪便，呕吐物，体液，血液，身体组织或食物中以方便的方式检测诺如病毒或札幌病毒例如离心机，具有改进的检测灵敏度，并完全消除非特异性因素。

47. 发明申请

US20050122802A1 Semiconductor storage device formed to optimize test technique and redundancy technology 失效
标题翻译：形成半导体存储设备，以优化测试技术和冗余技术
公开(公告)号：US20050122802A1
公开(公告)日：2005-06-09
申请号：US11040851
申请日：2005-01-20
申请人： Daisuke Kato , Takashi Taira , Kenji Ishizuka , Yohji Watanabe , Munehiro Yoshida
发明人： Daisuke Kato , Takashi Taira , Kenji Ishizuka , Yohji Watanabe , Munehiro Yoshida
IPC分类号： G11C8/02 , G11C29/00 , G11C29/26 , G11C7/00
CPC分类号： G11C29/785 , G11C29/26 , G11C29/787 , G11C2029/2602
摘要： There is provided a semiconductor storage device in which only a defective element is replaced by a row redundant element to compensate for a defect if at least one of a plurality of elements is defective in a case where the plurality of elements in a memory cell array are simultaneously activated. The semiconductor storage device includes an array control circuit which is configured to interrupt the operation of the defective element by preventing a word line state signal from being received based on a signal to determine whether a row redundancy replacement process is performed or not. The word line state signal is input to the plurality of memory blocks in the cell array unit via a single signal line.
摘要翻译：提供了一种半导体存储装置，其中只有一个缺陷元件被行冗余元件代替，以便在存储单元阵列中的多个元件是多个元件中的多个元件中的至少一个元件是有缺陷的情况下补偿缺陷同时激活。半导体存储装置包括阵列控制电路，其被配置为通过基于信号来防止接收到字线状态信号来中断故障元件的操作，以确定是否执行行冗余替换处理。字线状态信号通过单个信号线输入到单元阵列单元中的多个存储块。

48. 发明授权

US06856561B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US06856561B2
公开(公告)日：2005-02-15
申请号：US10657790
申请日：2003-09-08
申请人： Daisuke Kato , Munehiro Yoshida , Yohji Watanabe
发明人： Daisuke Kato , Munehiro Yoshida , Yohji Watanabe
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/808 , G11C29/785
摘要： A semiconductor memory device has a cell array, first normal elements each defined within the cell array as a group of memory cells arranged in a first direction of the cell array, second normal elements each defined within the cell array as a group of memory cells arranged in a second direction of the cell array, each the second normal element selecting a memory cells in operative association with a corresponding one of the first normal elements, first redundant elements disposed for replacement of defective first normal elements within the cell array, and second redundant elements disposed for replacement of defective second normal elements within the cell array. There are defined within the cell array first/second repair regions as a group of first/second normal elements with permission of replacement by each first/second redundant element.
摘要翻译：半导体存储器件具有单元阵列，每个在单元阵列内定义的第一法向元件作为沿单元阵列的第一方向布置的一组存储单元，每个在单元阵列内被定义为一组存储单元，每个存储单元被布置在所述单元阵列的第二方向上，每个所述第二普通元件选择与所述第一正常元件中的对应的一个操作关联的存储器单元，用于替换所述单元阵列内的有缺陷的第一正常元件的第一冗余元件和所述第二冗余元件用于替换电池阵列内的有缺陷的第二正常元件的元件。在单元阵列第一/第二修复区域内被定义为具有允许由每个第一/第二冗余元件替换的第一/第二正常元素的组。

49. 发明授权

US06741509B2 Semiconductor storage device formed to optimize test technique and redundancy technology 失效
标题翻译：形成半导体存储设备，以优化测试技术和冗余技术
公开(公告)号：US06741509B2
公开(公告)日：2004-05-25
申请号：US10053524
申请日：2002-01-16
申请人： Daisuke Kato , Takashi Taira , Kenji Ishizuka , Yohji Watanabe
发明人： Daisuke Kato , Takashi Taira , Kenji Ishizuka , Yohji Watanabe
IPC分类号： G11C700
CPC分类号： G11C29/785 , G11C29/26 , G11C29/787 , G11C2029/2602
摘要： There is provided a semiconductor storage device in which only a defective element is replaced by a row redundant element to compensate for a defect if at least one of a plurality of elements is defective in a case where the plurality of elements in a memory cell array are simultaneously activated. The semiconductor storage device includes an array control circuit which is configured to interrupt the operation of the defective element by preventing a word line state signal from being received based on a signal to determine whether a row redundancy replacement process is performed or not. The word line state signal is input to the plurality of memory blocks in the cell array unit via a single signal line.
摘要翻译：提供了一种半导体存储装置，其中只有一个缺陷元件被行冗余元件代替，以便在存储单元阵列中的多个元件是多个元件中的多个元件中的至少一个元件是有缺陷的情况下补偿缺陷同时激活。半导体存储装置包括阵列控制电路，其被配置为通过基于信号来防止接收到字线状态信号来中断故障元件的操作，以确定是否执行行冗余替换处理。字线状态信号通过单个信号线输入到单元阵列单元中的多个存储块。

50. 发明授权

US06674678B2 Sense amplifier control circuit of semiconductor memory device 有权
标题翻译：半导体存储器件的感应放大器控制电路
公开(公告)号：US06674678B2
公开(公告)日：2004-01-06
申请号：US10267949
申请日：2002-10-09
申请人： Daisuke Kato
发明人： Daisuke Kato
IPC分类号： G11C702
CPC分类号： G11C7/065 , G11C11/4091 , G11C2207/065 , H01L27/10897
摘要： A sense amplifier section of a semiconductor memory device includes a memory cell array and a plurality of bit line pairs arranged in a column direction of the memory cell array. The sense amplifier section is configured to control the transfer of data to or from the memory cell array via the bit line pairs. The sense amplifier section includes an array of layout units respectively including circuit portions of sense amplifiers, wherein the layout units are disposed in the array of layout units at intervals smaller than intervals of the bit line pairs.
摘要翻译：半导体存储器件的读出放大器部分包括存储单元阵列和布置在存储单元阵列的列方向上的多个位线对。感测放大器部分被配置为控制经由位线对向/从存储器单元阵列传送数据。感测放大器部分包括分别包括读出放大器的电路部分的布局单元的阵列，其中布局单元以比位线对的间隔小的间隔布置在布局单元的阵列中。

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