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    • 42. 发明公开
    • 액정표시장치용 어레이 기판 및 그의 제조방법
    • LCD装置的阵列面板及其制造方法
    • KR1020030057693A
    • 2003-07-07
    • KR1020010087769
    • 2001-12-29
    • 엘지디스플레이 주식회사
    • 권오남조규철
    • G02F1/1333
    • PURPOSE: An array panel for an LCD(Liquid Crystal Display) device and a manufacturing method thereof are provided to improve yield rate by reducing the number of masks and enhancing the process efficiency. CONSTITUTION: A semiconductor layer(120) composed of a first active layer(120a) and an ohmic contact layer(120b) is formed by using a gate insulating film(118). Data lines(124), source and drain electrodes(126,128) and data pads(130) are formed by using pure amorphous silicon, impurity amorphous silicon and a second metal material. A drain contact hole(131), a second active layer(136) and a passivation layer(138) are sequentially formed by a third mask process. Then, the whole part of the gate line is exposed, and the gate insulating film is removed. A gate pad electrode(142), a pixel electrode(140) and a data pad electrode(144) are formed after a transparent conductive material is deposited.
    • 目的:提供一种用于LCD(液晶显示器)的阵列面板及其制造方法,通过减少掩模的数量和提高处理效率来提高成品率。 构成:通过使用栅极绝缘膜(118)形成由第一有源层(120a)和欧姆接触层(120b)构成的半导体层(120)。 通过使用纯非晶硅,杂质非晶硅和第二金属材料形成数据线(124),源极和漏极(126,128)和数据焊盘(130)。 通过第三掩模处理顺序地形成漏极接触孔(131),第二有源层(136)和钝化层(138)。 然后,露出栅极线的整个部分,去除栅极绝缘膜。 在沉积透明导电材料之后形成栅极焊盘电极(142),像素电极(140)和数据焊盘电极(144)。
    • 43. 发明公开
    • 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
    • 用于制造金属线和薄膜晶体管(TFT)的蚀刻和方法
    • KR1020030046851A
    • 2003-06-18
    • KR1020010077119
    • 2001-12-06
    • 엘지디스플레이 주식회사
    • 조규철채기성황용섭
    • H01L21/3063
    • H01L21/32134C23F1/18C23F1/26G02F1/133351H01L29/458H01L29/4908H01L29/66765
    • PURPOSE: An etchant and a method for manufacturing a metal line and a TFT(Thin Film Transistor) using the same are provided to be capable of simultaneously etching a copper layer and a titanium layer. CONSTITUTION: The first and second metal layer(33,34) are sequentially formed on a TFT substrate(30). At this time, a titanium layer is used for the first metal layer(33) and a copper layer is used for the second metal layer(34), wherein the titanium layer improves the attaching force between the copper layer and the TFT substrate. A gate electrode(32) is formed by simultaneously carrying out a wet etching process at the first and second metal layer(33,34). At this time, the wet etching process is carried out by using an etchant obtained by mixing H2O2, F, and one selected from a group consisting of carboxylic acid, CH3COONH4, CH3COONa, CH3COOK, CH3COOH, and CH3COO.
    • 目的:提供一种用于制造金属线的蚀刻剂和制造方法以及使用其的TFT(薄膜晶体管),以能够同时蚀刻铜层和钛层。 构成:第一和第二金属层(33,34)依次形成在TFT基板(30)上。 此时,第一金属层(33)使用钛层,第二金属层(34)使用铜层,钛层改善了铜层与TFT基板之间的附着力。 通过在第一和第二金属层(33,34)同时进行湿式蚀刻工艺来形成栅电极(32)。 此时,通过使用通过混合H 2 O 2,F和从由羧酸,CH 3 COONH 4,CH 3 COONa,CH 3 COOK,CH 3 COOH和CH 3 COO组成的组中选择的一种获得的蚀刻剂来进行湿蚀刻工艺。
    • 44. 发明公开
    • 구리용 레지스트 제거용 조성물
    • 可兼容的电阻去除组合物
    • KR1020030030399A
    • 2003-04-18
    • KR1020010062527
    • 2001-10-10
    • 엘지디스플레이 주식회사주식회사 동진쎄미켐
    • 채기성황용섭조규철권오남이경묵김병욱이상대유종순
    • C23F1/10
    • C11D11/0047C11D7/263C11D7/3218C11D7/3263C11D7/3281C11D7/5013G03F7/425Y10S134/902
    • PURPOSE: A Cu-compatible resist removing composition is provided which reduces product defects due to defects of copper wiring by removing resist cleanly and preventing corrosion of the copper wiring formed at the lower part of the resist. CONSTITUTION: The Cu-compatible resist removing composition comprises 10 to 30 wt.% of first composition that is a compound selected from the group consisting of N-methylethanolamine, N-ethylethanolamine, diethylethanolamine, and dimethylethanolamine; 10 to 80 wt.% of second composition that is a compound selected from the group consisting of ethyleneglycol ethylether, ethyleneglycol butylether, ethyleneglycol methylether, diethyleneglycol methylether, diethyleneglycol ethylether, and diethyleneglycol propylether; and 10 to 80 wt.% of third composition that is a compound selected from the group consisting of N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, and N,N-dimethylimidazole, wherein the second composition is a glycol ether based solution having a molecular weight of 150 or less.
    • 目的:提供一种Cu兼容的抗蚀剂去除组合物,其通过清除抗蚀剂并防止形成在抗蚀剂下部的铜布线的腐蚀而减少由于铜布线的缺陷导致的产品缺陷。 构成:Cu兼容抗蚀剂去除组合物包含10至30重量%的第一组合物,其为选自N-甲基乙醇胺,N-乙基乙醇胺,二乙基乙醇胺和二甲基乙醇胺的化合物; 10至80重量%的第二组合物,其为选自乙二醇乙醚,乙二醇丁醚,乙二醇甲基醚,二甘醇甲基醚,二乙二醇乙醚和二甘醇丙基醚的化合物; 和10〜80重量%的第三组合物,其为选自N-甲基-2-吡咯烷酮,N,N-二甲基乙酰胺,N,N-二甲基甲酰胺和N,N-二甲基咪唑的化合物,其中第二 组合物是分子量为150以下的基于二醇醚的溶液。
    • 45. 发明授权
    • 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판
    • 식각용액식각용액으로패턴된구리배선을가지는전자기기용어레레기식각
    • KR100379824B1
    • 2003-04-11
    • KR1020000079355
    • 2000-12-20
    • 엘지디스플레이 주식회사
    • 조규철채기성
    • H01L21/306
    • H01L29/66765C09K13/04C09K13/06C23F1/18C23F1/26H01L21/32134H01L29/458
    • A method of forming an array substrate for use in a thin film transistor liquid crystal display (TFT-LCD) device includes forming a first metal layer on a substrate, patterning the first metal layer to form a gate line and a gate electrode extended from the gale line, forming a gate insulation layer on the substrate to cover the patterned first metal layer, forming an active layer on the gate insulation layer and over the gate electrode, forming an ohmic contact layer on the active layer, forming a second metal layer on the gate insulation layer to rover the ohmic contact layer and the active layer, forming a third copper metal layer on the second metal layer, simultaneously patterning the second metal layer and the third copper metal layer to form a double-layered data line, a double-layered source electrode and a double-layered drain electrode using an etchant that includes hydrogen peroxide (H2O2), a H2O2 stabilizer, and a neutral salt, and forming a pixel electrode contacting the double-layered drain electrode.
    • 形成用于薄膜晶体管液晶显示器(TFT-LCD)器件的阵列基板的方法包括:在基板上形成第一金属层;图案化第一金属层以形成栅极线和从第一金属层延伸的栅电极 在衬底上形成栅极绝缘层以覆盖图案化的第一金属层,在栅极绝缘层上和栅极上形成有源层,在有源层上形成欧姆接触层,在其上形成第二金属层 栅绝缘层漫游欧姆接触层和有源层,在第二金属层上形成第三铜金属层,同时图案化第二金属层和第三铜金属层以形成双层数据线,双层 使用包括过氧化氢(H 2 O 2),H 2 O 2稳定剂和中性盐的蚀刻剂并且形成与d接触的像素电极的双层源电极和双层漏电极 双层漏电极。
    • 47. 发明公开
    • 에칭제를 사용한 전자기기용 기판의 제조방법과 전자기기
    • 使用电子设备制造电子设备的基板的方法
    • KR1020000028870A
    • 2000-05-25
    • KR1019990043017
    • 1999-10-06
    • 엘지디스플레이 주식회사
    • 조규철
    • G02F1/136
    • H01L29/66765C23F1/02C23F1/20H01L21/32134
    • PURPOSE: A method for manufacturing substrate for electronic device using etchant and electronic device is provided to simultaneously perform an etching of each metal film at a same etching ratio with a single etching process by performing an etching of a depositing film using an etchant. CONSTITUTION: A Ti film or a Ti alloy film(10), an Al film or an Al alloy film(11), and a Ti film or a Ti alloy film(10) are successively formed, and a deposit film is formed. A photo mask(37) with a certain pattern is formed on the Ti film or the Ti alloy film(10) located on a gate electrode(5) using a photo lithography, and an entire etching process is performed on the deposit film using an etchant to form a source electrode and a drain electrode. A photo mask(38) with a certain pattern on the Ti film or the Ti alloy film(10) using the photo lithography, and an entire etching process is performed on the deposit film using an etchant to form a lower pad layer.
    • 目的:提供一种使用蚀刻剂和电子器件制造用于电子器件的衬底的方法,以通过使用蚀刻剂进行沉积膜的蚀刻,以单一蚀刻工艺以相同的蚀刻比同时进行每个金属膜的蚀刻。 构成:依次形成Ti膜或Ti合金膜(10),Al膜或Al合金膜(11),Ti膜或Ti合金膜(10),形成沉积膜。 使用光刻法在位于栅电极(5)上的Ti膜或Ti合金膜(10)上形成具有一定图案的光掩模(37),并且使用 蚀刻剂以形成源电极和漏电极。 使用光刻法在Ti膜或Ti合金膜(10)上具有一定图案的光掩模(38),并且使用蚀刻剂对沉积膜进行全蚀刻处理以形成下焊盘层。
    • 49. 发明授权
    • 소프트 몰드의 제조방법
    • 软模制造方法
    • KR101137845B1
    • 2012-04-20
    • KR1020050055197
    • 2005-06-24
    • 엘지디스플레이 주식회사
    • 김진욱조규철
    • G02F1/1335
    • B29C33/40B29C33/3857B29C33/424
    • 본 발명은 소프트 몰드 형성을 위한 마스터 몰드의 사이즈에 상관없이 공정 정합성이 높은 소프트 몰드의 제조방법을 제공하기 위한 것으로, 이와 같은 목적을 달성하기 위한 소프트 몰드의 제조방법은 지그(Zig)의 상부에 마스터 몰드(master mold)를 올려놓는 단계; 상기 지그 내에 프리-폴리머층을 형성하는 단계; 상기 프리-폴리머층상에 백 프레인(back plane)용 기판을 부착시키는 단계; 상기 프리-폴리머층을 선택적으로 경화시켜서 선택적으로 폴리머층을 형성시키는 단계; 상기 지그 및 상기 마스터 몰드로부터 상기 폴리머층 및 상기 프리-폴리머층을 떼어내는 단계; 경화되지 않은 상기 프리-폴리머층을 제거하는 단계를 포함함을 특징으로 한다. 이때 상기 프리-폴리머층은 열 경화 또는 UV 경화 시킬 수 있고, 열 경화는 마이크로웨이브 오븐내에서 진행하고, UV 경화는 투과영역과 차광영역이 정의된 마스크를 이용하여 진행함을 특징으로 한다.
      마스터 몰드, 열 경화, UV 경화