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41. 发明申请

US20070192443A1 Contents download system using wireless internet platform and method thereof 审中-公开
标题翻译：使用无线互联网平台的内容下载系统及其方法
公开(公告)号：US20070192443A1
公开(公告)日：2007-08-16
申请号：US11650314
申请日：2007-01-05
申请人： Young-Hyun Kim
发明人： Young-Hyun Kim
IPC分类号： G06F15/16
CPC分类号： H04M1/72552 , H04L65/4084 , H04L67/06 , H04M1/72525 , H04M1/72561
摘要： The present invention relates to a contents download system and method a using wireless internet platform. The contents download system of the present invention includes a contents providing server which stores a transmission log including transmission volume information in contents transmission; a short message server which transforms transmission log information into a short message and transmits it when the transmission log information is received from the contents providing server; and a mobile communication terminal which receives contents from the contents providing server. According to the present invention, more efficient contents retransmission as a result of the interruption of the contents transmission occurred in transmitting the contents is possible.
摘要翻译：本发明涉及一种使用无线互联网平台的内容下载系统和方法。本发明的内容下载系统包括：内容提供服务器，其将包含发送量信息的发送日志存储在内容发送中; 当从内容提供服务器接收到传输日志信息时，将传输日志信息变换为短消息并将其发送的短消息服务器; 以及从内容提供服务器接收内容的移动通信终端。根据本发明，发送内容时发生的内容传输中断的结果是更有效的内容重传是可能的。

42. 发明申请

US20050259708A1 Photonic integrated device using reverse-mesa structure and method for fabricating the same 有权
标题翻译：使用反台面结构的光子集成器件及其制造方法
公开(公告)号：US20050259708A1
公开(公告)日：2005-11-24
申请号：US10991614
申请日：2004-11-18
申请人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
发明人： Byeong-Hoon Park , Yu-Dong Bae , In Kim , Byung-Kwon Kang , Young-Hyun Kim , Sang-Moon Lee
IPC分类号： H01S5/042 , G02B6/12 , H01S3/08 , H01S5/026 , H01S5/22 , H01S5/227 , H01S5/323
CPC分类号： H01S5/026 , H01S5/0264 , H01S5/0265 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/32333
摘要： A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplifier, and a photo detector are integrated, a first conductive clad layer and an active layer sequentially formed on the first conductive substrate in the form of a mesa structure, a second conductive clad layer formed on the active layer in the form of a reverse-mesa structure, an ohmic contact layer formed on the second clad layer in such a manner that the ohmic contact layer has a width narrower than the width of an upper surface of the second conductive clad layer, a current shielding layer filled in a sidewall having a mesa and reverse-mesa structure, and at least one window area formed between the above elements.
摘要翻译：公开了一种使用逆台面结构的光子集成器件及其制造方法。光子集成器件包括第一导电衬底，半导体激光器，光调制器，半导体光放大器和光检测器集成在其上，第一导电覆层和有源层依次形成在第一导电衬底上，的台面结构的第二导电覆盖层，形成在反面台面结构形式的有源层上的第二导电覆层，形成在第二覆盖层上的欧姆接触层，使得欧姆接触层的宽度比第二导电覆层的上表面的宽度，填充在具有台面和反台面结构的侧壁中的电流屏蔽层，以及形成在上述元件之间的至少一个窗口区域。

43. 发明申请

US20140327095A1 MAGNETIC DEVICE 有权
标题翻译：磁性装置
公开(公告)号：US20140327095A1
公开(公告)日：2014-11-06
申请号：US14254858
申请日：2014-04-16
申请人： Young-hyun KIM , Hee-ju SHIN , Woo-jin KIM , Sang-hwan PARK
发明人： Young-hyun KIM , Hee-ju SHIN , Woo-jin KIM , Sang-hwan PARK
IPC分类号： H01L43/02
CPC分类号： H01L43/10 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.
摘要翻译：磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

44. 发明授权

US08772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
标题翻译：磁隧道结设备，存储器，存储器系统和电子设备
公开(公告)号：US08772846B2
公开(公告)日：2014-07-08
申请号：US13398640
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L21/14
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
摘要翻译：本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

45. 发明授权

US08222625B2 Non-volatile memory device including phase-change material 有权
标题翻译：包括相变材料的非易失性存储器件
公开(公告)号：US08222625B2
公开(公告)日：2012-07-17
申请号：US12657715
申请日：2010-01-26
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh , Carl H. Schell , Jonathan D. Maimon , Stephen J. Hudgens
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh , Carl H. Schell , Jonathan D. Maimon , Stephen J. Hudgens
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：包括具有低工作电压和低功耗的相变材料的非易失性存储器件包括下电极; 相变材料层，形成在下电极上，以与下电极电连接，其中相变材料层包括具有由SnXSbYTeZ表示的组成的相变材料，或者替代地，全部或部分由硅和/或铟制成的锡，砷和/或锑的铋，以及碲的硒; 以及形成在所述相变材料层上以与所述相变材料层电连接的上电极。这里，0.001＆nlE; X＆lt; NE; 0.3，0.001＆nlE; Y＆nlE; 0.8,0.1＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

46. 发明申请

US20120018824A1 MAGNETIC MEMORY LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME 有权
标题翻译：磁记忆层和磁记忆体装置，包括它们
公开(公告)号：US20120018824A1
公开(公告)日：2012-01-26
申请号：US13170870
申请日：2011-06-28
申请人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
发明人： Woo-chang LIM , Young-hyun Kim , Jun-ho Jeong , Hee-ju Shin
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the crystal direction with respect to a surface of the second seed layer.
摘要翻译：磁存储层和包括该磁存储器的磁存储器件，所述磁存储层包括第一晶种层; 在所述第一种子层上的第二种子层，所述第二种子层相对于所述第一种子层的表面根据晶体方向生长; 以及在所述第二种子层上的主磁性层，所述主磁性层相对于所述第二晶种层的表面根据所述晶体方向生长。

47. 发明申请

US20110049459A1 NON-VOLATILE MEMORY DEVICE INCLUDING PHASE-CHANGE MATERIAL 有权
标题翻译：非易失性存储器件，包括相变材料
公开(公告)号：US20110049459A1
公开(公告)日：2011-03-03
申请号：US12697667
申请日：2010-02-01
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Heo-ju Shin , Jin-ho Oh
IPC分类号： H01L45/00 , G06F12/00
CPC分类号： H01L45/124 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电连接到相变材料层。相变材料层包括含有由式（I）A（IIXIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

48. 发明申请

US20110049458A1 Non-volatile memory device including phase-change material 有权
标题翻译：包括相变材料的非易失性存储器件
公开(公告)号：US20110049458A1
公开(公告)日：2011-03-03
申请号：US12657715
申请日：2010-01-26
申请人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh
发明人： Dong-ho Ahn , Hideki Horii , Soon-oh Park , Young-hyun Kim , Hee-ju Shin , Jin-ho Oh
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/141 , H01L45/144
摘要： A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.
摘要翻译：包括具有低工作电压和低功耗的相变材料的非易失性存储器件包括下电极; 相变材料层，形成在下电极上，以与下电极电连接，其中相变材料层包括具有由SnXSbYTeZ表示的组成的相变材料，或者替代地，全部或部分由硅和/或铟制成的锡，砷和/或锑的铋，以及碲的硒; 以及形成在所述相变材料层上以与所述相变材料层电连接的上电极。这里，0.001＆nlE; X＆lt; NE; 0.3，0.001＆nlE; Y＆nlE; 0.8,0.1＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

49. 发明授权

US07361286B2 Method of detecting etching end-point 失效
标题翻译：腐蚀终点检测方法
公开(公告)号：US07361286B2
公开(公告)日：2008-04-22
申请号：US11222136
申请日：2005-09-08
申请人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
发明人： Young-Hyun Kim , Yu-Dong Bae , Jung-Kee Lee , In Kim
IPC分类号： G01L21/50 , G01R31/00
CPC分类号： H01L22/34 , H01L22/20
摘要： A method of detecting an etching end-point includes the steps of: forming a mask on a pattern area of an etching object; forming an etching indicator on an etching area of the etching object, which is not covered by the mask; etching the etching object using the mask; and evaluating the size of a remaining object covered by the mask using the etching indicator.
摘要翻译：检测蚀刻端点的方法包括以下步骤：在蚀刻对象的图案区域上形成掩模; 在蚀刻对象的蚀刻区域上形成蚀刻指示器，其不被掩模覆盖; 使用掩模蚀刻蚀刻对象; 以及使用蚀刻指示器评估由掩模覆盖的剩余物体的尺寸。

50. 发明授权

US07142343B2 Electro-absorptive optical modulator module having monolithic integrated photo detector 有权
标题翻译：具有单片集成光电检测器的吸收光调制器模块
公开(公告)号：US07142343B2
公开(公告)日：2006-11-28
申请号：US10837938
申请日：2004-05-03
申请人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
发明人： In Kim , Young-Hyun Kim , Byung-Kwon Kang
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： H01S5/12 , H01S5/0264 , H01S5/0265 , H01S5/106 , H01S5/1064 , H01S5/1203
摘要： An electro-absorptive optical modulator module monolithic-integrated on a semiconductor substrate, which includes a distributed feedback laser having a grating for oscillating light and to output the oscillated light through a first end and a second end of the module. An electro-absorptive modulator modulates a first light output through the first end of the distributed feedback laser, and an optical detector provides detection of a second light output through the second end of the module. The optical detector is formed opposite to the second end of the distributed feedback laser on the semiconductor substrate. A first inner window permits attenuation of the intensity of the second light and electrically insulates the distributed feedback laser and the optical detector from each other, with the first inner window being arranged between the distributed feedback laser and the optical detector.
摘要翻译：一种单片集成在半导体衬底上的电吸收光调制器模块，其包括具有用于振荡光的光栅的分布式反馈激光器，并且通过模块的第一端和第二端输出振荡的光。电吸收调制器通过分布式反馈激光器的第一端调制第一光输出，并且光学检测器提供通过模块的第二端的第二光输出的检测。光检测器形成在半导体衬底上与分布反馈激光器的第二端相对。第一内部窗口允许衰减第二光的强度并使分布式反馈激光器和光学检测器彼此电绝缘，其中第一内部窗口布置在分布式反馈激光器和光学检测器之间。

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