专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US06713323B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06713323B2
公开(公告)日：2004-03-30
申请号：US10058158
申请日：2002-01-29
申请人： Shunpei Yamazaki , Osamu Nakamura , Takashi Hamada , Satoshi Murakami
发明人： Shunpei Yamazaki , Osamu Nakamura , Takashi Hamada , Satoshi Murakami
IPC分类号： H01L21339
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device is manufactured by a method in which the number of heat treatments at a high temperature (600° C. or higher) is reduced to thereby achieve a process at a low temperature (600° C. or lower), and a simplified process and improvement in throughput are realized. An impurity region to which a rare gas element (also called a rare gas) is added is formed on a semiconductor film of a crystalline structure by using a mask. Gettering is performed in such a manner that a metallic element contained in the semiconductor film is caused to segregate in the impurity region by heat treatment. The impurity region is thereafter used as a source or drain region.
摘要翻译：通过如下方法制造半导体器件：在高温（600℃以上）下进行热处理的数量减少，从而达到低温（600℃以下）的工序，简化了实现了吞吐量的处理和改进。通过使用掩模，在结晶结构的半导体膜上形成添加稀有气体元素（也称为稀有气体）的杂质区域。以使得包含在半导体膜中的金属元素通过热处理在杂质区域中分离的方式进行吸气。此后，杂质区域用作源区或漏区。

42. 发明授权

US06599785B2 Method of manufacturing a semiconductor device 有权
公开(公告)号：US06599785B2
公开(公告)日：2003-07-29
申请号：US10078414
申请日：2002-02-21
申请人： Takashi Hamada , Yasuyuki Arai
发明人： Takashi Hamada , Yasuyuki Arai
IPC分类号： H01L2100
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： TFT structures optimal for driving conditions of a pixel portion and driving circuits are obtained using a small number of photo masks. First through third semiconductor films are formed on a first insulating film. First shape first, second, and third electrodes are formed on the first through third semiconductor films. The first shape first, second, third electrodes are used as masks in first doping treatment to form first concentration impurity regions of one conductivity type in the first through third semiconductor films. Second shape first, second, and third electrodes are formed from the first shape first, second, and third electrodes. A second concentration impurity region of the one conductivity type which overlaps the second shape second electrode is formed in the second semiconductor film in second doping treatment. Also formed in the second doping treatment are third concentration impurity regions of the one conductivity type which are placed in the first and second semiconductor films. Fourth and Fifth concentration impurity regions having the other conductivity type that is opposite to the one conductivity type are formed in the third semiconductor film in third doping treatment.

43. 发明授权

US6092228A Message receiving apparatus and message transmitting and receiving method 失效
标题翻译：消息接收装置和消息发送和接收方法
公开(公告)号：US6092228A
公开(公告)日：2000-07-18
申请号：US782165
申请日：1997-01-14
申请人： Noriko Tanaka , Hiroshi Uranaka , Takashi Hamada
发明人： Noriko Tanaka , Hiroshi Uranaka , Takashi Hamada
IPC分类号： H04W88/02 , H04W88/18 , G06F11/00
CPC分类号： H04W88/185 , H04W88/022
摘要： A signal 101 from a transmitting station includes: an address 102 specific to a message receiving apparatus; a specific message 103 that is an advance notice indicating receipt of a large-volume message; and a message main body 105. The message receiving apparatus includes: a receiving section 11 that outputs a data string by demodulating the signal 101; a decoder 13 that subjects the data string to an error correcting process, converts the corrected data string into a message, and makes an address collation; an analyzer 14 that analyzes the message and outputs a control signal to a total control section 16 if the analyzed message is a specific message; a buffer 15 that stores a message main body; and the total control section 16 that stops a peripheral device section 17 in accordance with signals obtained from the decoder and the analyzer and controls display by sending a message in the buffer 15 to the peripheral device section 17.
摘要翻译：来自发送站的信号101包括：特定于消息接收装置的地址102; 作为指示接收大容量消息的提前通知的特定消息103; 和消息主体105.消息接收装置包括：接收部分11，通过解调信号101来输出数据串; 对数据串进行纠错处理的解码器13将校正后的数据串变换为消息，进行地址整理; 如果分析的消息是特定消息，则分析器14分析消息并将控制信号输出到总控制部分16; 存储消息主体的缓冲器15; 以及总控制部分16，其根据从解码器和分析器获得的信号停止外围设备部分17，并通过在缓冲器15中向外围设备部分17发送消息来控制显示。

44. 发明授权

US5636081A Magnetic disc apparatus and magnetic disc 失效
标题翻译：磁盘装置和磁盘
公开(公告)号：US5636081A
公开(公告)日：1997-06-03
申请号：US307996
申请日：1994-09-16
申请人： Teruyoshi Higashiya , Tuneyuki Hasegawa , Masayuki Katsumoto , Yuichi Otani , Mituhiko Oguchi , Hiroyuki Sugimoto , Tetsuji Higashijima , Takashi Hamada , Kinya Eguchi , Hideaki Amano
发明人： Teruyoshi Higashiya , Tuneyuki Hasegawa , Masayuki Katsumoto , Yuichi Otani , Mituhiko Oguchi , Hiroyuki Sugimoto , Tetsuji Higashijima , Takashi Hamada , Kinya Eguchi , Hideaki Amano
IPC分类号： G11B33/12 , G11B5/012 , G11B5/72 , G11B5/725 , G11B25/04 , G11B33/14 , G11B17/00
CPC分类号： G11B5/012 , G11B33/1446 , G11B33/1453
摘要： A magnetic disc apparatus includes a casing for defining a sealed space, a magnetic disc disposed within the space, a spindle to which the magnetic disc is fixed, a motor for rotating the spindle, a flying head slider for writing and/or reading information in and/or from the magnetic disc and a carriage for translating the flying head slider. The magnetic disc apparatus incorporates an organic chemical compound capable of suppressing siloxane from being chemically changed to silicon oxide. The organic chemical compound contains at least one of monoalkyl-substituted benzene, dialkyl-substituted benzene, trialkyl-substituted benzene, fatty acid, fatty ester, alkyl ester of aromatic acid, thiazoles and phenols.
摘要翻译：磁盘装置包括用于限定密封空间的壳体，设置在该空间内的磁盘，固定有磁盘的主轴，用于旋转主轴的电动机，用于将信息写入和/或读取信息的飞头滑块和/或来自磁盘和用于平移飞头滑块的滑架。磁盘装置包含能够抑制硅氧烷化学改变为氧化硅的有机化合物。有机化合物包含单烷基取代的苯，二烷基取代的苯，三烷基取代的苯，脂肪酸，脂肪酸酯，芳族酸的烷基酯，噻唑和酚中的至少一种。

45. 发明申请

US20140103385A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20140103385A1
公开(公告)日：2014-04-17
申请号：US14054021
申请日：2013-10-15
申请人： Kaoru HATANO , Takashi HAMADA , Kikuo MIYATA , Hiromitsu KATSUI , Shoji OKAZAKI
发明人： Kaoru HATANO , Takashi HAMADA , Kikuo MIYATA , Hiromitsu KATSUI , Shoji OKAZAKI
IPC分类号： H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L27/3209 , H01L27/322 , H01L27/3246 , H01L33/005 , H01L51/5044 , H01L51/5278 , H01L2924/0002 , H01L2924/00
摘要： Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode.
摘要翻译：抑制包括串联元件的发光装置中的串扰现象的发生。发光装置包括：绝缘层上的下电极; 在下部电极之间的部分上的隔板，其包括在每个下部电极的端部上方的突出部分; 每个下电极和隔板上的第一发光单元; 在所述第一发光单元上方的中间层; 在所述中间层上方的第二发光单元; 以及位于第二发光单元上的上电极。突出部分和每个下电极之间的距离大于下电极上的第一发光单元和中间层的总厚度。

46. 发明授权

US08633051B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08633051B2
公开(公告)日：2014-01-21
申请号：US12859446
申请日：2010-08-19
申请人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Hikaru Tamura , Kazuko Yamawaki , Takashi Hamada , Shunpei Yamazaki
IPC分类号： H01L31/0232 , H01L21/71
CPC分类号： G09F9/33 , H01L31/0203 , H01L31/02325
摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.
摘要翻译：目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

47. 发明申请

US20120129280A1 Method of Manufacturing Light Emitting Device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20120129280A1
公开(公告)日：2012-05-24
申请号：US13360896
申请日：2012-01-30
申请人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
发明人： Shunpei Yamazaki , Takashi Hamada , Satoshi Seo
IPC分类号： H01L33/02
CPC分类号： H01L33/005 , H01L27/3211 , H01L51/0005 , H01L51/0021 , H01L51/56 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided.
摘要翻译：提供一种制造发光器件的方法，其需要低成本，容易并且具有高生产量。制造发光器件的方法的特征在于：将含有发光材料的溶液在减压下喷射到阳极或阴极; 溶液中的溶剂挥发，直到溶液到达阳极或阴极; 并且剩余的发光材料沉积在阳极或阴极上以形成发光层。在施加溶液后，不需要用于降低膜厚度的燃烧步骤。因此，可以提供需要低成本且容易但具有高生产量的制造方法。

48. 发明申请

US20120007094A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120007094A1
公开(公告)日：2012-01-12
申请号：US13226803
申请日：2011-09-07
申请人： Takashi HAMADA , Yasuyuki ARAI
发明人： Takashi HAMADA , Yasuyuki ARAI
IPC分类号： H01L33/08
CPC分类号： H01L27/124 , G02F1/13454 , H01L27/1214 , H01L27/127 , H01L29/42384
摘要： A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape.
摘要翻译：半导体器件包括薄膜晶体管。薄膜晶体管包括在基板上的半导体膜，其中半导体膜包括一对第一区域，插入在该对第一区域之间的一对第二区域和插入在该对第二区域之间的沟道形成区域。一对第二区域中的杂质浓度小于该对第一区域中的杂质浓度。薄膜晶体管包括绝缘膜，其中绝缘膜的一部分设置在半导体膜上。薄膜晶体管在该部分上包括导电膜，并且导电膜包括锥形。

49. 发明申请

US20110043513A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20110043513A1
公开(公告)日：2011-02-24
申请号：US12915086
申请日：2010-10-29
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , G09G3/20
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

50. 发明授权

US07843408B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US07843408B2
公开(公告)日：2010-11-30
申请号：US10803190
申请日：2004-03-18
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式