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41. 发明申请

WO2004024452A3 PROCESS FOR MAKING DENSE MIXED METAL Si3N4 TARGETS 审中-公开
标题翻译：制造DENSE MIXED金属Si3N4目标的工艺
公开(公告)号：WO2004024452A3
公开(公告)日：2005-06-09
申请号：PCT/US0327145
申请日：2003-08-27
申请人： TOSOH SMD INC , SMATHERS DAVID B , VALENT FRANCIS S , REGAN MICHAEL J , HEWLETT PACKARD CO
发明人： SMATHERS DAVID B , VALENT FRANCIS S , REGAN MICHAEL J
IPC分类号： B32B9/00 , B32B15/04 , B41J20060101 , C04B35/64 , C23C14/34
CPC分类号： C23C14/3414 , B22F2998/10 , B22F2999/00 , C22C29/16 , C22C32/0047 , C22C32/0068 , B22F1/0003 , B22F3/15 , B22F3/14 , B22F2201/10
摘要： A composition and method for fabricating high-density Ta-Al-O, Ta-Si-N, and W-Si-N sputtering targets, having particular usefulness for the sputtering of heater layers for ink jet printers. Compositions in accordance with the invention comprise a metal component, Si3N4, and a sintering aid so that the targets will successfully sputter without cracking, etc. The components are combined in powder form and pressure consolidated under heated conditions for a time sufficient to form a consolidated blend having an actual density of greater that about 95% of the theoretical density. The consolidated blend may then be machined so as to provide the final desired target shape.
摘要翻译：用于制造高密度Ta-Al-O，Ta-Si-N和W-Si-N溅射靶的组合物和方法，对于用于喷墨打印机的加热器层的溅射特别有用。根据本发明的组合物包括金属组分Si 3 N 4和烧结助剂，使得靶材将成功地溅射而不会破裂等。组分以粉末形式组合并在加热条件下加压固化足以形成固结的时间混合物具有大于理论密度的约95％的实际密度。然后可以加工固结的混合物以提供最终期望的目标形状。

42. 发明申请

WO2005007920A3 SPUTTERING TARGET ASSEMBLY HAVING LOW CONDUCTIVITY BACKING PLATE AND METHOD OF MAKING SAME 审中-公开
标题翻译：具有低电导率背板的溅射目标组件及其制造方法
公开(公告)号：WO2005007920A3
公开(公告)日：2005-05-12
申请号：PCT/US2004022615
申请日：2004-07-13
申请人： TOSOH SMD INC , BAILEY ROBERT S , HOLCOMB MELVIN K
发明人： BAILEY ROBERT S , HOLCOMB MELVIN K
IPC分类号： B21D39/03 , C23C20060101 , C23C14/34
CPC分类号： C23C14/3407 , C23C14/3414 , H01J37/3426 , H01J37/3435 , Y10T29/49826
摘要： A target and backing plate assembly (10) and method of making the same. The backing plate (14) is made of a material having an electrical conductivity less than or equal to 45 % IACS and is selected from the group consisting of Al alloys, Cu alloys, magnesium, magnesium alloys, molybdenum, molybdenum alloys, zinc, zinc alloys, nickel and nickel alloys. The target (12) is bonded to the backing plate (14).
摘要翻译：目标和背板组件（10）及其制造方法。背板（14）由导电率小于或等于45％IACS的材料制成，并且选自Al合金，Cu合金，镁，镁合金，钼，钼合金，锌，锌合金，镍和镍合金。靶（12）结合到背板（14）上。

43. 发明申请

WO2004024978A1 NON-PLANAR SPUTTER TARGETS HAVING CRYSTALLOGRAPHIC ORIENTATIONS PROMOTING UNIFORM DEPOSITION 审中-公开
标题翻译：具有促进均匀沉积的晶体学方向的非平面溅射靶
公开(公告)号：WO2004024978A1
公开(公告)日：2004-03-25
申请号：PCT/US2003/028418
申请日：2003-09-12
申请人： TOSOH SMD, INC. , BAILEY, Robert, S. , HOLCOMB, Melvin, K. , SMATHERS, David, B. , WIEMELS, Timothy
发明人： BAILEY, Robert, S. , HOLCOMB, Melvin, K. , SMATHERS, David, B. , WIEMELS, Timothy
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3414 , H01J37/34 , H01J37/3426 , Y10T29/49805
摘要： A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface (25) that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate is disclosed. A closed dome (22) end of the sputter target (20) is comprised of a first crystallographic orientation and sidewalls (24) of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result. There are vectors (α, β1, β2) in the target.
摘要翻译：公开了一种在溅射靶表面（25）的部分中具有不同晶体取向的非平面溅射靶，其促进从靶表面溅射到衬底上的更理想的沉积和密度图案。溅射靶（20）的封闭圆顶（22）端部由第一结晶取向组成，溅射靶的侧壁（24）由不同于圆顶的晶体取向构成。优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。液压成形操作导致不同的晶体取向，同时最小化或理想地省略了热的应用。因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。目标中有载体（alpha，beta1，beta2）。

44. 发明申请

WO2004024972A3 SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY 审中-公开
公开(公告)号：WO2004024972A3
公开(公告)日：2004-03-25
申请号：PCT/US2003/026465
申请日：2003-08-26
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y.
发明人： IVANOV, Eugene, Y.
IPC分类号： C23C14/34
摘要： A target (1) and backing plate (10) assembly and method of making the same. The target (1) and backing plate (10) assembly provides a mechanical interlock between the target (1) and backing plate (10) in addition to diffusion bonding between dissimilar materials comprising the target (1) and backing plate (10). An interlayer may also be used between the target (1) and backing plate (10). A plurality of ridges, or other salient surface features (3,4) on one of the target (1) and backing plate (10) are joined to corresponding members or channels (13, 14) on the other of the target and backing plate. The dissimilar materials of the target (1) and backing plate (10) fill negative angled cavities(13, 14) formed by the plurality of ridges (3, 4) and corresponding channels or members (13, 14) of the target (1) and backing plate (10) to accommodate the diffusion bonded dissimilar materials. A target (1) and backing plate (10) assembly with increased strength results.

45. 发明申请

WO2004001094A1 SPUTTER TARGET MONITORING SYSTEM 审中-公开
标题翻译：爆炸物目标监测系统
公开(公告)号：WO2004001094A1
公开(公告)日：2003-12-31
申请号：PCT/US2003/019740
申请日：2003-06-10
申请人： TOSOH SMD, INC. , POOLE, John, E. , WICKERSHAM, Charles, E., Jr.
发明人： POOLE, John, E. , WICKERSHAM, Charles, E., Jr.
IPC分类号： C23C14/34
CPC分类号： H01J37/32935 , C23C14/34 , C23C14/54 , H01J37/34 , H01J37/3444 , H01J37/3482
摘要： A sputtering target monitoring sytem (20) for monitoring the status of a sputtering source target (22) during the sputtering process. The collection of data is initiated based on measured voltages in the sputtering source target (22), whereas the arcing count is determined based on current spikes or interruptions to the current in the sputtering source target (22) during the sputtering process. The real time data collected during the sputtering process is recorded and displayed in table or graphical format at any time during the sputtering process. Thus, problems in the sputtering process, or in the sputtering source (22), including an approaching end of life of the target may be easily ascertained. Alarms, messages or other indicators may be used to alert operators to problems or conditions during the sputtering process.
摘要翻译：一种用于在溅射过程中监测溅射源靶（22）的状态的溅射靶监测系统（20）。基于溅射源目标（22）中的测量电压来启动数据的收集，而基于溅射过程期间溅射源目标（22）中的电流的电流尖峰或中断来确定电弧计数。在溅射过程中随时记录和显示溅射过程中收集的实时数据，并以表格或图形格式显示。因此，可以容易地确定溅射工艺或溅射源（22）中包括目标寿命终止的问题。报警，消息或其他指示器可用于提醒操作员在溅射过程中的问题或条件。

46. 发明申请

WO2003106733A1 TARGET AND METHOD OF DIFFUSION BONDING TARGET TO BACKING PLATE 审中-公开
标题翻译：扩散接头目标和方法对背板的影响
公开(公告)号：WO2003106733A1
公开(公告)日：2003-12-24
申请号：PCT/US2003/018440
申请日：2003-06-11
申请人： TOSOH SMD, INC. , IVANOV, Eugene, Y. , CONARD, Harry, W.
发明人： IVANOV, Eugene, Y. , CONARD, Harry, W.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , B23K20/021 , C23C14/3407 , C23C14/3414
摘要： Sputter target assemblies (10) and methods of making the sputter target assemblies in which the HIP processes conventionally used are minimized, or eliminated, while producing higher yields of sputter target assemblies in less time. In one instance the sputter target assemblies include a single, or multiple, layered interlayer (14, 16) between the target and backing plate (18) in order to achieve intermetallic diffusion bonds between adjacent layers during a single HIP process. A mechanical interlock between the target (12) and backing plate is also achieved preferably during a single HIP process. In another instance, the target and backing plate are welded directly together by electron beam welding, and the interlayer and HIP process are omitted. In either case, the process for making the sputter target assembly is shortened, rendering it less expensive and subject to less failures, while achieving assemblies having robust strength.
摘要翻译：溅射靶组件（10）和制造其中常规使用的HIP工艺的溅射靶组件的方法被最小化或消除，同时在较短时间内产生更高产量的溅射靶组件。在一个实例中，溅射靶组件包括在靶材和背板（18）之间的单层或多层分层的中间层（14,16），以便在单个HIP工艺期间实现相邻层之间的金属间扩散接合。目标（12）和背板之间的机械互锁优选地也是在单个HIP过程期间实现的。在另一种情况下，目标板和背板通过电子束焊接直接焊接在一起，并且省略了中间层和HIP工艺。在任一种情况下，制造溅射靶组件的工艺被缩短，使得它更便宜并且经受更少的故障，同时实现具有强大强度的组件。

47. 发明申请

WO2002081767A2 A METHOD FOR DETERMINING A CRITICAL SIZE FOR AN ALUMINUM OXIDE INCLUSION IN AN ALUMINUM OR AN ALUMINUM ALLOY SPUTTER TARGET 审中-公开
标题翻译：用于确定铝或铝合金溅射目标中包含的关键尺寸的方法
公开(公告)号：WO2002081767A2
公开(公告)日：2002-10-17
申请号：PCT/US2002/010516
申请日：2002-04-04
申请人： TOSOH SMD, INC. , WICKERSHAM, Charles, E., Jr. , POOLE, John, E. , LEYBOVICH, Alexander , ZHU, Lin
发明人： WICKERSHAM, Charles, E., Jr. , POOLE, John, E. , LEYBOVICH, Alexander , ZHU, Lin
IPC分类号： C23C
CPC分类号： H01J37/3426 , C23C14/3414
摘要： The present invention relates to a method for determining a critical size for a diameter of an Al 2 O 3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al 2 O 3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al 2 O 3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al 2 O 3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.
摘要翻译：本发明涉及一种用于确定Al或Al合金溅射靶（42）中的Al 2 O 3夹杂物（38）的直径的临界尺寸的方法，以防止溅射期间的电弧。该方法包括提供具有氩等离子体的溅射装置。在Al或Al合金溅射靶的选择溅射环境下，溅射中等离子体具有已知厚度的等离子体护套，其具有不含Al 2 O 3的不含杂质的溅射表面。当对于所选择的溅射环境已知护套的厚度时，可以基于护套的厚度确定Al 2 O 3夹杂物（38）的临界尺寸。更具体地，Al或Al合金溅射靶（42）中的Al 2 O 3夹杂物（38）的直径必须小于在所选择的溅射环境下溅射期间等离子体护套的厚度以抑制电弧。

48. 发明申请

WO1993016830A1 METHOD FOR PRODUCING SPUTTERING TARGET FOR DEPOSITION OF TITANIUM, ALUMINUM AND NITROGEN 审中-公开
标题翻译：生产用于沉积钛，铝和氮的溅射靶的方法
公开(公告)号：WO1993016830A1
公开(公告)日：1993-09-02
申请号：PCT/US1993000530
申请日：1993-01-21
申请人： TOSOH SMD, INC.
发明人： TOSOH SMD, INC. , DITTMAR, Mark, B. , SCHEIDERER, Paul, E.
IPC分类号： B22F01/02
CPC分类号： C23C14/3414 , C22C32/0068 , C23C14/0641
摘要： Dual phase sputter targets consisting essentially of TiN and Al, methods of manufacture thereof, and cathodic sputtering methods using such targets are disclosed. The targets are prepared by blending TiN and Al powders followed by compaction to full density. The thus compacted materials are optionally sintered and are then formed into the desired target shape. The targets are used in cathodic sputtering processes to form opaque, dark colored decorative and wear resistant coatings.
摘要翻译：公开了基本上由TiN和Al组成的双相溅射靶，其制造方法和使用这种靶的阴极溅射方法。通过混合TiN和Al粉末然后压实成全密度制备靶材。这样压实的材料可选地被烧结，然后形成所需的目标形状。目标用于阴极溅射工艺以形成不透明，深色装饰和耐磨涂层。

49. 发明授权

US10792788B2 Optimized textured surfaces and methods of optimizing 有权
公开(公告)号：US10792788B2
公开(公告)日：2020-10-06
申请号：US15029674
申请日：2014-10-08
申请人： Tosoh SMD, Inc.
发明人： David B. Smathers , Joseph W. Buckfeller , John Holeman , Justin K. Reed
IPC分类号： C23C14/34 , B24C1/08 , B24C1/00 , C23C14/56 , H01J37/34
摘要： Methods for treating texturized surfaces of sputter targets in order to improve adhesion and retention of deposited particles thereon. The target surfaces may first be texturized by a precursor texturizing method such as bead blasting, grit blasting, plasma spraying, or a twin-wire-arc spraying (TWAS) method. The thus textured surface is then sprayed or blasted with ice particles to form an optimized textured surface. The ice particles may comprise sublimable particles such as frozen carbon dioxide or dry ice. Also, argon may be used as exemplary ice particles.

50. 发明申请

US20200240006A1 METHOD OF MAKING A TANTALUM SPUTTER TARGET AND SPUTTER TARGETS MADE THEREBY 审中-公开
公开(公告)号：US20200240006A1
公开(公告)日：2020-07-30
申请号：US16849050
申请日：2020-04-15
申请人： Tosoh SMD, Inc.
发明人： Eugene Y. Ivanov , Matthew Fisher , Alex Kuhn
IPC分类号： C23C14/34 , B21B15/00 , H01J37/34 , B21B1/02 , C22C27/02 , C22F1/18
摘要： Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {100} banding factors.

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