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41. 发明授权

US09012334B2 Formation of a tantalum-nitride layer 有权
标题翻译：形成氮化钽层
公开(公告)号：US09012334B2
公开(公告)日：2015-04-21
申请号：US13396311
申请日：2012-02-14
申请人： Sean M. Seutter , Michael X. Yang , Ming Xi
发明人： Sean M. Seutter , Michael X. Yang , Ming Xi
IPC分类号： H01L21/469 , C23C16/455 , C23C16/34 , C23C16/56 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45553 , C23C16/34 , C23C16/4554 , C23C16/56 , H01L21/28562 , H01L21/28568 , H01L21/76844 , H01L21/76862
摘要： A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
摘要翻译：公开了一种在衬底上形成材料的方法。在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度等离子体退火工艺。随后在氮化钽层上沉积含金属的层。

42. 发明授权

US07867914B2 System and method for forming an integrated barrier layer 有权
标题翻译：用于形成集成阻挡层的系统和方法
公开(公告)号：US07867914B2
公开(公告)日：2011-01-11
申请号：US11770735
申请日：2007-06-29
申请人： Ming Xi , Michael Yang , Hui Zhang
发明人： Ming Xi , Michael Yang , Hui Zhang
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
摘要翻译：描述了在基板上形成集成阻挡层的装置和方法。整合的阻挡层至少包括第一难熔金属层和第二难熔金属层。使用包括化学气相沉积（CVD）步骤和循环沉积步骤的双模式沉积工艺形成集成阻挡层。双模式沉积工艺可以在单个处理室中进行。

43. 发明授权

US07779784B2 Apparatus and method for plasma assisted deposition 有权
标题翻译：用于等离子体辅助沉积的装置和方法
公开(公告)号：US07779784B2
公开(公告)日：2010-08-24
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要翻译：本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。该方法的一个实施方案包括在单个室中执行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

44. 发明申请

US20100099270A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20100099270A1
公开(公告)日：2010-04-22
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： H01L21/302 , G06F17/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

45. 发明授权

US07695563B2 Pulsed deposition process for tungsten nucleation 失效
标题翻译：钨成核的脉冲沉积工艺
公开(公告)号：US07695563B2
公开(公告)日：2010-04-13
申请号：US11621040
申请日：2007-01-08
申请人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
发明人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
IPC分类号： C30B25/14
CPC分类号： H01L21/28562 , C23C16/14 , C23C16/45523 , C23C16/45525 , C30B25/02 , C30B29/02
摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.
摘要翻译：在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层处理。该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。在实施例中，还原气体可以含有乙硼烷或硅烷。

46. 发明申请

US20090056626A1 APPARATUS FOR CYCLICAL DEPOSITING OF THIN FILMS 失效
标题翻译：用于循环沉积薄膜的装置
公开(公告)号：US20090056626A1
公开(公告)日：2009-03-05
申请号：US12261487
申请日：2008-10-30
申请人： RANDHIR P.S. THAKUR , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
发明人： RANDHIR P.S. THAKUR , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
IPC分类号： H01L21/30
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量给所述室的反应区域的阀的操作同步的排气系统。

47. 发明授权

US07396565B2 Multiple precursor cyclical deposition system 失效
标题翻译：多前体循环沉积系统
公开(公告)号：US07396565B2
公开(公告)日：2008-07-08
申请号：US10913888
申请日：2004-08-06
申请人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
发明人： Michael Xi Yang , Hyungsuk Alexander Yoon , Hui Zhang , Hongbin Fang , Ming Xi
IPC分类号： C23C16/40
CPC分类号： C23C16/45544 , C23C16/45531 , C23C16/45561
摘要： Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
摘要翻译：本发明的实施方案涉及利用三种或更多种前体的循环沉积的装置和方法，其中至少两种前体至少部分重叠的衬底结构。在衬底结构上沉积三元材料层的一个实施例包括提供至少一个循环的气体以沉积三元材料层。一个周期包括引入第一前体的脉冲，引入第二前体的脉冲，以及引入第三前体的脉冲，其中第二前体的脉冲和第三前体的脉冲至少部分重叠。在一个方面，三元材料层包括但不限于钨硼硅（W x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x Si x <<）（TaSi x N y），氮化硅（TaSi x N y N y），氮氧化硅（SiO 2） N x Y）和氧化铪氧化铪（HfSi x O y y）。在一个方面，三元材料层的组成可以通过在循环之间改变第二前体与第三前体的流动比来调节。

48. 发明授权

US07384867B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07384867B2
公开(公告)日：2008-06-10
申请号：US11206491
申请日：2005-08-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

49. 发明申请

US20080014352A1 SYSTEM AND METHOD FOR FORMING AN INTEGRATED BARRIER LAYER 有权
标题翻译：用于形成集成障碍层的系统和方法
公开(公告)号：US20080014352A1
公开(公告)日：2008-01-17
申请号：US11770735
申请日：2007-06-29
申请人： MING XI , Michael Yang , Hui Zhang
发明人： MING XI , Michael Yang , Hui Zhang
IPC分类号： C23C16/00
CPC分类号： H01L21/76846 , H01L21/28562 , H01L28/75 , H01L28/84 , H01L28/90
摘要： An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.
摘要翻译：描述了在基板上形成集成阻挡层的装置和方法。整合的阻挡层至少包括第一难熔金属层和第二难熔金属层。使用包括化学气相沉积（CVD）步骤和循环沉积步骤的双模式沉积工艺形成集成阻挡层。双模式沉积工艺可以在单个处理室中进行。

50. 发明申请

US20070218688A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 失效
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20070218688A1
公开(公告)日：2007-09-20
申请号：US11749016
申请日：2007-05-15
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfredq Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

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