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41. 发明申请

US20140077240A1 IV MATERIAL PHOTONIC DEVICE ON DBR 审中-公开
标题翻译： IV物理光电器件在DBR上
公开(公告)号：US20140077240A1
公开(公告)日：2014-03-20
申请号：US13621413
申请日：2012-09-17
申请人： Radek Roucka , Michael Lebby , Scott Semans , Andrew Clark
发明人： Radek Roucka , Michael Lebby , Scott Semans , Andrew Clark
IPC分类号： H01L31/0232 , H01L33/46
CPC分类号： H01L31/0232 , H01L31/02165 , H01L31/02327 , H01L31/056 , H01L31/1812 , H01L33/10 , H01L33/34 , H01L33/46 , Y02E10/52
摘要： A photonic structure including a substrate of either crystalline silicon or germanium and a multilayer distributed Bragg reflector (DBR) positioned on the substrate. The DBR includes material substantially crystal lattice matching the DBR to the substrate. The DBR includes a plurality of pairs of layers of material including any combination of IV materials and any rare earth oxide (REO). A photonic device including multilayers of single crystal IV material positioned on the DBR and including material substantially crystal lattice matching the DBR to the photonic device.
摘要翻译：包括晶体硅或锗的衬底和位于衬底上的多层分布式布拉格反射器（DBR）的光子结构。 DBR包括与DBR相匹配的基本晶格的材料。 DBR包括多对材料层，包括IV材料和任何稀土氧化物（REO）的任何组合。一种光子器件，包括位于DBR上的单晶IV材料的多层，并且包括与DBR与光子器件匹配的基本上晶格的材料。

42. 发明授权

US08623747B1 Silicon, aluminum oxide, aluminum nitride template for optoelectronic and power devices 有权
标题翻译：硅，氧化铝，氮化铝模板用于光电和功率器件
公开(公告)号：US08623747B1
公开(公告)日：2014-01-07
申请号：US13717182
申请日：2012-12-17
申请人： Erdem Arkun , Michael Lebby , Andrew Clark
发明人： Erdem Arkun , Michael Lebby , Andrew Clark
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02488 , H01L21/0254 , H01L21/0262
摘要： A method of forming a template on a silicon substrate includes providing a single crystal silicon substrate. The method further includes forming an aluminum oxide coating on the surface of the silicon substrate, the aluminum oxide being substantially crystal lattice matched to the surface of the silicon substrate and epitaxially depositing a layer of aluminum nitride (AlN) on the aluminum oxide coating substantially crystal lattice matched to the surface of the aluminum nitride.
摘要翻译：在硅衬底上形成模板的方法包括提供单晶硅衬底。所述方法还包括在所述硅衬底的表面上形成氧化铝涂层，所述氧化铝与所述硅衬底的表面基本上晶格匹配并在所述氧化铝涂层上外延沉积氮化铝层（AlN）晶格与氮化铝的表面匹配。

43. 发明授权

US08455756B2 High efficiency solar cell using IIIB material transition layers 失效
标题翻译：高效太阳能电池采用IIIB材料过渡层
公开(公告)号：US08455756B2
公开(公告)日：2013-06-04
申请号：US12708969
申请日：2010-02-19
申请人： Michael Lebby , Andrew Clark
发明人： Michael Lebby , Andrew Clark
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/0725 , H01L31/18 , H01L31/1848 , H01L31/1852 , Y02E10/544
摘要： A solar cell including a base of single crystal silicon with a cubic crystal structure and a single crystal layer of a second material with a higher bandgap than the bandgap of silicon. First and second single crystal transition layers are positioned in overlying relationship with the layers graduated from a cubic crystal structure at one surface to a hexagonal crystal structure at an opposed surface. The first and second transition layers are positioned between the base and the layer of second material with the one surface lattice matched to the base and the opposed surface lattice matched to the layer of second material.
摘要翻译：一种太阳能电池，其包括具有立方晶体结构的单晶硅的基底和具有比硅的带隙更高的带隙的第二材料的单晶层。第一和第二单晶过渡层与从一个表面的立方晶体结构分级到在相对表面处的六方晶系结构的层的重叠关系定位。第一和第二过渡层位于基底和第二材料层之间，其中一个表面晶格与基底相匹配，而相对的表面晶格与第二材料层相匹配。

44. 发明申请

US20120147906A1 LASER COOLING OF MODIFIED SOI WAFER 有权
标题翻译：改性SOI硅片的激光冷却
公开(公告)号：US20120147906A1
公开(公告)日：2012-06-14
申请号：US12966394
申请日：2010-12-13
申请人： David L. Williams , Andrew Clark , Michael Lebby
发明人： David L. Williams , Andrew Clark , Michael Lebby
IPC分类号： H01S3/30 , H01L21/30
CPC分类号： H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A laser cooling system includes a substrate, an REO layer of single crystal rare earth oxide including at least one rare earth element positioned on the surface of the substrate, and an active layer of single crystal semiconductor material positioned on the REO layer to form a semiconductor-on-insulator (SOI) device. Light guiding structure is at least partially formed by the REO layer so as to introduce energy elements into the REO layer and produce cooling by anti-Stokes fluorescence. The active layer of single crystal semiconductor material is positioned on the REO layer in proximity to the light guiding structure so as to receive the cooling.
摘要翻译：激光冷却系统包括基板，包括位于基板表面上的至少一个稀土元素的单晶稀土氧化物的REO层和位于REO层上以形成半导体的单晶半导体材料的有源层绝缘体（SOI）器件。导光结构至少部分地由REO层形成，以便将能量元素引入REO层并通过反斯托克斯荧光产生冷却。单晶半导体材料的有源层位于靠近导光结构的REO层上，以便接收冷却。

45. 发明授权

US08049100B2 Multijunction rare earth solar cell 有权
标题翻译：多功能稀土太阳能电池
公开(公告)号：US08049100B2
公开(公告)日：2011-11-01
申请号：US12619621
申请日：2009-11-16
申请人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
发明人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
IPC分类号： H01L31/055 , H01L31/028
CPC分类号： H01L31/0725 , H01L21/02381 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02507 , H01L21/02532 , H01L31/0745 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Examples of device structures utilizing layers of rare earth oxides to perform the tasks of strain engineering in transitioning between semiconductor layers of different composition and/or lattice orientation and size are given. A structure comprising a plurality of semiconductor layers separated by transition layer(s) comprising two or more rare earth compounds operable as a sink for structural defects is disclosed.
摘要翻译：给出了利用稀土氧化物层执行应变工程在不同组成和/或晶格取向和尺寸的半导体层之间转换中的任务的装置结构的实例。公开了一种结构，其包括由过渡层分离的多个半导体层，所述过渡层包括可操作为用于结构缺陷的汇的两种或更多种稀土化合物。

46. 发明授权

US08039737B2 Passive rare earth tandem solar cell 有权
标题翻译：被动稀土串联太阳能电池
公开(公告)号：US08039737B2
公开(公告)日：2011-10-18
申请号：US12619549
申请日：2009-11-16
申请人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
发明人： Andrew Clark , Robin Smith , Richard Sewell , Scott Semans , F. Erdem Arkun , Michael Lebby
IPC分类号： H01L31/055 , H01L31/028
CPC分类号： H01L31/0687 , H01L31/055 , Y02E10/52 , Y02E10/544
摘要： The use of rare-earth (RE+O, N, P) based materials to transition between two semiconductor materials is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacings enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. Disclosed embodiments include tandem solar cells.
摘要翻译：公开了使用稀土（RE + O，N，P）基材料在两种半导体材料之间的转变。基于稀土的氧化物，氮化物和磷化物提供了宽范围的晶格间距，使得能够与IV族，III-V族和II-VI族化合物的压缩，拉伸或无应力晶格匹配。公开的实施例包括串联太阳能电池。

47. 发明申请

US20100112736A1 FULL COLOR DISPLAY 有权
标题翻译：全彩色显示
公开(公告)号：US20100112736A1
公开(公告)日：2010-05-06
申请号：US12568620
申请日：2009-09-28
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01L21/18 , H01L33/00
CPC分类号： H01L27/156 , H01L33/105 , H01L33/343 , H01L33/44
摘要： A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color.
摘要翻译：包括红色，绿色和蓝色发光二极管的全色显示器，每个发光二极管包括具有至少一层单晶稀土材料的发光区域，每个发光二极管中的稀土材料具有至少一个辐射跃迁，并且在红色发光二极管中产生约640nm的发射波长的稀土材料，绿色发光二极管中的540nm，以及蓝色发光二极管中的460nm。通常，通过选择具有产生所选颜色的辐射波长的辐射跃迁的稀土来确定每个LED的颜色。在稀土具有多于一个辐射跃迁的情况下，可以使用调整后的反射镜来选择所需的颜色。

48. 发明授权

US07643526B1 Spontaneous/stimulated light emitting μ-cavity device 失效
标题翻译：自发/受激发光的mu腔装置
公开(公告)号：US07643526B1
公开(公告)日：2010-01-05
申请号：US11472087
申请日：2006-06-21
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01S3/16
CPC分类号： H01S3/0627 , H01S3/0604 , H01S3/08009 , H01S3/09 , H01S3/16
摘要： A light emitting device with a μ-cavity including a first spacer of single crystal dielectric material and an active area including single crystal erbium dielectric material positioned on the first spacer. The erbium dielectric material and the single crystal dielectric material of the first spacer are substantially crystal lattice matched at their juncture. A second spacer of single crystal dielectric material is positioned on the active area. The erbium dielectric material and the single crystal dielectric material of the second spacer are substantially crystal lattice matched at the second surface. The high-κ erbium dielectric provides a high gain κ-cavity that emits increased amounts of light in either spontaneous or stimulated modes of operation.
摘要翻译：一种具有包括单晶介质材料的第一间隔物的μ腔的发光器件和包括位于第一间隔物上的单晶铒介电材料的有源区。铒电介质材料和第一间隔物的单晶介电材料在其接合处基本上晶格匹配。单晶介质材料的第二间隔物位于有源区上。铒电介质材料和第二间隔物的单晶介电材料在第二表面上基本上晶格匹配。高kappa铒电介质提供高增益κ空腔，其在自发或刺激的操作模式中发射增加量的光。

49. 发明申请

US20090291535A1 STACKED TRANSISTORS AND PROCESS 有权
标题翻译：堆叠晶体管和工艺
公开(公告)号：US20090291535A1
公开(公告)日：2009-11-26
申请号：US12534011
申请日：2009-07-31
申请人： Petar B. Atanackovic , Michael Lebby
发明人： Petar B. Atanackovic , Michael Lebby
IPC分类号： H01L29/786
CPC分类号： H01L21/8221 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L27/0688 , H01L27/1203
摘要： A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material.
摘要翻译：在公共半导体衬底上水平堆叠晶体管的方法是通过提供单晶体，一般为硅的半导体衬底来启动的。在单晶半导体基板上形成多个晶体管，并封装在二氧化硅等绝缘层中。通过多个晶体管之间的绝缘层形成一个或多个开口，以暴露单晶半导体衬底的表面。在单晶半导体衬底的暴露表面上外延生长单晶稀土绝缘体材料层。在单晶稀土绝缘体材料层上外延生长单层半导体材料（通常为硅）层。在单晶半导体材料层上形成混合晶体管。

50. 发明授权

US07605531B1 Full color display including LEDs with rare earth active areas and different radiative transistions 有权
标题翻译：全彩显示屏，包括具有稀土活性区域和不同辐射传输的LED
公开(公告)号：US07605531B1
公开(公告)日：2009-10-20
申请号：US11257517
申请日：2005-10-25
申请人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
发明人： Michael Lebby , Vijit Sabnis , Petar B. Atanackovic
IPC分类号： H01J1/62 , H01J63/04 , H01L31/00
CPC分类号： H01L27/156 , H01L33/105 , H01L33/343 , H01L33/44
摘要： A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color.
摘要翻译：包括红色，绿色和蓝色发光二极管的全色显示器，每个发光二极管包括具有至少一层单晶稀土材料的发光区域，每个发光二极管中的稀土材料具有至少一个辐射跃迁，并且在红色发光二极管中产生约640nm的发射波长的稀土材料，绿色发光二极管中的540nm，以及蓝色发光二极管中的460nm。通常，通过选择具有产生所选颜色的辐射波长的辐射跃迁的稀土来确定每个LED的颜色。在稀土具有多于一个辐射跃迁的情况下，可以使用调整后的反射镜来选择所需的颜色。

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