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41. 发明申请

US20130224635A1 MASK PATTERN CREATION METHOD, RECORDING MEDIUM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：掩模图形创建方法，记录介质和半导体器件制造方法
公开(公告)号：US20130224635A1
公开(公告)日：2013-08-29
申请号：US13604076
申请日：2012-09-05
申请人： Yoko TAKEKAWA , Masafumi ASANO , Yingkang ZHANG , Kazuhiro TAKAHATA , Tomoko OJIMA
发明人： Yoko TAKEKAWA , Masafumi ASANO , Yingkang ZHANG , Kazuhiro TAKAHATA , Tomoko OJIMA
IPC分类号： G03F1/68 , G03F7/20 , G03F1/72
CPC分类号： G03F7/0002
摘要： According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.
摘要翻译：根据一个实施例，掩模图案创建方法包括基于设计图案和关于DSA材料的信息，从设计图案区域提取其中DSA材料被自组装以形成DSA图案的区域。该方法还包括在形成引导图案时，基于设计图案，关于DSA材料的信息，面积以及设计约束，创建导致DSA图案在该区域中形成的引导图案。该方法还包括使用引导图案创建引导图案的掩模图案。

42. 发明申请

US20120205782A1 Imprint Apparatus, Imprint Method, and Process Condition Selection Method 审中-公开
标题翻译：压印装置，压印方法和工艺条件选择方法
公开(公告)号：US20120205782A1
公开(公告)日：2012-08-16
申请号：US13238117
申请日：2011-09-21
申请人： Masafumi ASANO
发明人： Masafumi ASANO
IPC分类号： H01L29/02 , G03B27/42
CPC分类号： B29C43/021 , B29C43/04 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint apparatus of one embodiment includes: a resist dropping unit adapted to drop resist onto a substrate; a patterning unit adapted to pattern the resist into transfer patterns corresponding to the template patterns; and a control unit configured to change a dropping condition for a resist dropping process shot by shot. The control unit is adapted to control, as the dropping condition, the distance to the position of a droplet of the resist to be dropped onto the substrate from a position on the substrate to be pressed with an assessment pattern, the assessment pattern being one of the template patterns that is to be assessed.
摘要翻译：一个实施例的压印装置包括：抗蚀剂下落单元，适于将抗蚀剂落在基底上; 适于将抗蚀剂图案化成对应于模板图案的传送图案的图案形成单元; 以及控制单元，被配置为改变通过镜头拍摄的抗蚀剂落下过程的下降条件。控制单元适于作为下落条件从评估图案的待按压基板上的位置控制到落在基板上的抗蚀剂液滴的位置的距离，评估图案是要评估的模板模式。

43. 发明申请

US20110315077A1 TEMPLATE, MANUFACTURING METHOD, AND PROCESSING METHOD 审中-公开
标题翻译：模板，制造方法和处理方法
公开(公告)号：US20110315077A1
公开(公告)日：2011-12-29
申请号：US13051729
申请日：2011-03-18
申请人： Masafumi ASANO
发明人： Masafumi ASANO
IPC分类号： B05C11/00 , B05D5/00 , B05D3/00 , G03F7/20
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to the embodiments, a template is obtain which is used for imprint of forming a second projection and recess pattern formed of a curing agent on a processing target layer by transferring a first projection and recess pattern onto the curing agent by filling the first projection and recess pattern with the curing agent and curing the curing agent. The template includes the first projection and recess pattern on one surface side of a substrate. The first projection and recess pattern is such that height positions of bottom surfaces of recess portions are approximately the same, and includes two or more types of projection portions whose height from the bottom surfaces of the recess portions is different.
摘要翻译：根据实施方式，获得模板，其通过将第一突起和凹部图案填充到第一突起而将第一突起和凹部图案转印到固化剂上而形成由处理对象层上的固化剂形成的第二突起和凹部图案，具有固化剂的凹凸图案并固化固化剂。模板包括在基板的一个表面侧上的第一突出和凹陷图案。第一突起和凹部图案是使凹部的底面的高度位置大致相同，并且包括从凹部的底面的高度不同的两种以上的突起部。

44. 发明授权

US08055366B2 Simulation model creating method, mask data creating method and semiconductor device manufacturing method 失效
标题翻译：模拟模型创建方法，掩模数据创建方法和半导体器件制造方法
公开(公告)号：US08055366B2
公开(公告)日：2011-11-08
申请号：US12406828
申请日：2009-03-18
申请人： Shoji Mimotogi , Masafumi Asano
发明人： Shoji Mimotogi , Masafumi Asano
IPC分类号： G06F19/00 , G06F17/50 , G06F1/00 , G06G7/48 , G06K9/00
CPC分类号： G03F7/70641 , G03F1/36 , G03F1/68
摘要： A simulation model creating method computes, for measurement results of a line width of a resist pattern formed with varied an exposure amount and focus value, a permissible fluctuation range of the pattern line width from a distribution of the exposure amount and a distribution of the focus value; computes difference values between the measurement results and corresponding approximation values on a fitting function which has the exposure amount and focus value as parameters; compares the difference values with the permissible fluctuation range; deletes any measurement values for which the difference value is larger than the permissible fluctuation range, and recomputes the fitting function accordingly; and deletes measurement values outside a permissible fluctuation range of a pattern line width of the mask, and creates a simulation model.
摘要翻译：仿真模型创建方法针对由曝光量和聚焦值变化形成的抗蚀剂图案的线宽的测量结果，计算曝光量的分布和焦点分布的图案线宽度的容许波动范围值; 在具有曝光量和聚焦值作为参数的拟合函数上计算测量结果与相应近似值之间的差值; 将差值与允许的波动范围进行比较; 删除差值大于允许波动范围的任何测量值，并相应地重新计算拟合功能; 并将测量值删除在掩模的图案线宽度的允许波动范围之外，并创建仿真模型。

45. 发明申请

US20110245956A1 Method and system for managing semiconductor manufacturing device 审中-公开
标题翻译：用于管理半导体制造装置的方法和系统
公开(公告)号：US20110245956A1
公开(公告)日：2011-10-06
申请号：US13067542
申请日：2011-06-08
申请人： Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
发明人： Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32221 , G05B2219/45031 , Y02P90/22
摘要： A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.
摘要翻译：管理系统包括设定质量控制值变化的可变周期的可变周期设定部。然后，检索单元检索夹着可变周期的事件。这些事件可以是半导体制造装置的维护和/或校正值的改变。分析周期设定单元设定用于分析由检索单元检索的事件之间的质量控制值的变化原因的分析期间。

46. 发明授权

US07883824B2 Method for evaluating lithography apparatus and method for controlling lithography apparatus 失效
标题翻译：评估光刻设备的方法和控制光刻设备的方法
公开(公告)号：US07883824B2
公开(公告)日：2011-02-08
申请号：US12405710
申请日：2009-03-17
申请人： Masafumi Asano , Kenji Yoshida , Masahiro Kanno
发明人： Masafumi Asano , Kenji Yoshida , Masahiro Kanno
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70641 , G03F7/70625
摘要： An evaluation method for lithography apparatus including a coating unit, an exposure unit, a heating unit and a development unit, the evaluation method including forming an evaluation resist pattern by using the lithography apparatus, the evaluation resist pattern including first and second evaluation patterns, the first and second evaluation patterns having different peripheral environments, measuring dimensions of the first and second evaluation patterns to obtain a dimensional difference between the first and second resist evaluation patterns, estimating an exposure dose of a resist when the resist is exposed by the exposure unit, the estimating the exposure dose being performed based on the dimensional difference between the first and second resist evaluation patterns, and estimating an effective heating temperature of the resist when the resist is heated by the heating unit, the estimating the effective heating temperature being performed based on the estimated exposure dose and the dimensional difference.
摘要翻译：一种包括涂布单元，曝光单元，加热单元和显影单元的光刻设备的评估方法，所述评估方法包括通过使用光刻设备形成评估抗蚀剂图案，所述评估抗蚀剂图案包括第一和第二评估图案，第一和第二评估图案具有不同的外围环境，测量第一和第二评估图案的尺寸以获得第一和第二抗蚀剂评估图案之间的尺寸差异，当抗蚀剂被曝光单元曝光时估计抗蚀剂的曝光剂量，基于第一和第二抗蚀剂评估图案之间的尺寸差来估计正在进行的曝光剂量，以及当加热单元加热抗蚀剂时估计抗蚀剂的有效加热温度，基于估计暴露剂量和t 他的尺寸差异。

47. 发明申请

US20100166289A1 FEATURE-QUANTITY EXTRACTING METHOD, DESIGNED-CIRCUIT-PATTERN VERIFYING METHOD, AND COMPUTER PROGRAM PRODUCT 审中-公开
标题翻译：特征提取方法，设计电路图形验证方法和计算机程序产品
公开(公告)号：US20100166289A1
公开(公告)日：2010-07-01
申请号：US12646677
申请日：2009-12-23
申请人： Masaki SATAKE , Masafumi Asano , Satoshi Tanaka , Taiga Uno
发明人： Masaki SATAKE , Masafumi Asano , Satoshi Tanaka , Taiga Uno
IPC分类号： G06K9/46 , G06T7/00
CPC分类号： G03F1/44 , G03F7/705
摘要： Feature-quantity extraction parameters used by feature-quantity extraction functions for calculating feature quantities used as explanatory variables of a resist model for predicting a resist image are set. The feature-quantity extraction functions, for which the feature-quantity extraction parameters are set, are caused to act on optical images of a pattern of a photomask to calculate feature quantities from the optical images.
摘要翻译：设置用于计算用作预测抗蚀剂图像的抗蚀剂模型的解释变量的特征量的特征量提取函数所使用的特征量提取参数。使特征量提取参数被设置的特征量提取功能作用于光掩模图案的光学图像，以计算来自光学图像的特征量。

48. 发明授权

US07742834B2 Management system of semiconductor fabrication apparatus, abnormality factor extraction method of semiconductor fabrication apparatus, and management method of the same 失效
标题翻译：半导体制造装置的管理系统，半导体制造装置的异常因子提取方法及其管理方法
公开(公告)号：US07742834B2
公开(公告)日：2010-06-22
申请号：US11727824
申请日：2007-03-28
申请人： Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
发明人： Hiroshi Matsushita , Junji Sugamoto , Masafumi Asano
IPC分类号： G06F19/00 , G05B13/02 , H01L21/00 , G01N37/00
CPC分类号： G05B19/41875 , G05B2219/32075 , G05B2219/32222 , G05B2219/45031 , Y02P90/22
摘要： According to the present, there is proved a semiconductor fabrication apparatus management system having:a sensor which monitors and outputs a plurality of apparatus parameters of a semiconductor fabrication apparatus which fabricates a semiconductor device;a measurement unit which measures a dimensional value of the semiconductor device, and outputs the dimensional value as dimensional data;an apparatus parameter storage unit which stores the apparatus parameters;a dimensional data storage unit which stores the dimensional data;an apparatus parameter controller which calculates predicted dimensional data by extracting the dimensional data from the dimensional data storage unit, and controls at least one of the plurality of apparatus parameters on the basis of the predicted dimensional data; andan abnormality factor extraction unit which analyzes correlations between the controlled apparatus parameter and other apparatus parameters, and extracts an abnormal apparatus parameter on the basis of a calculated correlation coefficient.
摘要翻译：根据现在，已经证明了一种半导体制造装置管理系统，其具有：监视并输出制造半导体装置的半导体制造装置的多个装置参数的传感器; 测量单元，其测量半导体器件的尺寸值，并将该尺寸值作为尺寸数据输出; 装置参数存储单元，其存储所述装置参数; 存储尺寸数据的尺寸数据存储单元; 装置参数控制器，其通过从所述尺寸数据存储单元提取所述尺寸数据来计算预测尺寸数据，并且基于所述预测尺寸数据来控制所述多个装置参数中的至少一个; 以及异常因子提取单元，其分析受控设备参数和其他设备参数之间的相关性，并且基于计算的相关系数提取异常设备参数。

49. 发明授权

US07655369B2 Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device 失效
公开(公告)号：US07655369B2
公开(公告)日：2010-02-02
申请号：US11646480
申请日：2006-12-28
申请人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
发明人： Masafumi Asano , Tadahito Fujisawa , Satoshi Tanaka
IPC分类号： G03C5/00 , G03F9/00 , G03F1/00
CPC分类号： G03F7/70466 , G03F1/44 , G03F1/70 , G03F7/70625
摘要： A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask.

50. 发明申请

US20090305148A1 PATTERN DATA CREATING METHOD, PHOTOMASK FABRICATING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：图案数据创建方法，光电子制造方法和制造半导体器件的方法
公开(公告)号：US20090305148A1
公开(公告)日：2009-12-10
申请号：US12472040
申请日：2009-05-26
申请人： Masafumi ASANO
发明人： Masafumi ASANO
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/36 , G03F1/68
摘要： A pattern data creating method according to an embodiment of the present invention creates data of a mask pattern to be arranged on a photomask. The method includes creating a test mask pattern by moving positions of plural edges in a given mask pattern according to a predetermined probability density distribution, the test mask pattern having dimension values which are different from dimension values of the given mask pattern, obtaining dimension values of a wafer pattern, which are measured by exposing a wafer with a test mask on which the test mask pattern is arranged, forming the wafer pattern on the wafer by the exposure, and measuring the dimension values of the wafer pattern on the wafer, obtaining a relationship between the dimension values of the wafer pattern and the dimension values of the test mask pattern, and creating, by using the relationship, the mask pattern having dimension values by which a wafer pattern having predetermined dimension values is formed.
摘要翻译：根据本发明的实施例的图案数据创建方法创建要布置在光掩模上的掩模图案的数据。该方法包括通过根据预定概率密度分布移动给定掩模图案中的多个边缘的位置来创建测试掩模图案，该测试掩模图案具有与给定掩模图案的尺寸值不同的尺寸值，获得尺寸值通过利用其上配置有测试掩模图案的测试掩模使晶片曝光来测量晶片图案，通过曝光在晶片上形成晶片图案，并测量晶片上的晶片图案的尺寸值，获得晶片图案的尺寸值与测试掩模图案的尺寸值之间的关系，以及通过使用该关系创建具有形成具有预定尺寸值的晶片图案的尺寸值的掩模图案。

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