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41. 发明申请

US20100126668A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体处理装置和方法
公开(公告)号：US20100126668A1
公开(公告)日：2010-05-27
申请号：US12696323
申请日：2010-01-29
申请人： Akira KOSHIISHI , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira KOSHIISHI , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23F1/08
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

42. 发明申请

US20090242127A1 PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻装置和方法以及计算机可读存储介质
公开(公告)号：US20090242127A1
公开(公告)日：2009-10-01
申请号：US12411001
申请日：2009-03-25
申请人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
发明人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01J37/32697
摘要： A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching.
摘要翻译：等离子体蚀刻装置包括处理容器; 将目标基板安装在处理容器中的下电极; 设置在所述处理容器中以与所述下电极平行地面对的上电极; 处理气体供给单元，被配置为将处理气体供应到上部和下部电极之间的处理空间; 第一射频电源单元，被配置为向下部电极施加用于产生处理气体的等离子体的第一射频功率; 覆盖所述下电极的顶表面周边部分的朝向所述基板的径向外侧突出的聚焦环; DC电源，被配置为输出可变DC电压; 以及根据等离子体蚀刻的处理条件将直流电源连接到焦点环和上部电极中的任一个或两者的直流电压供给网络。

43. 发明申请

US20070227665A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20070227665A1
公开(公告)日：2007-10-04
申请号：US11694126
申请日：2007-03-30
申请人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki Matsumoto , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , H01L21/465
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32706 , H01J37/32935
摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
摘要翻译：等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

44. 发明申请

US20060066247A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060066247A1
公开(公告)日：2006-03-30
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01J7/24
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a variable DC power supply to apply a DC voltage to the upper electrode, so as to cause the absolute value of a self-bias voltage on the surface thereof to be large enough to obtain a suitable sputtering effect on the surface, and to increase the plasma sheath length on the upper electrode side to generate predetermined pressed plasma.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体，以对晶片W进行等离子体蚀刻。该装置还包括用于向上电极施加直流电压的可变直流电源，使得其表面上的自偏压的绝对值足够大以在表面上获得合适的溅射效应，并且增加上电极侧的等离子体鞘长度以产生预定的按压等离子体。

45. 发明申请

US20060037704A1 Plasma Processing apparatus and method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037704A1
公开(公告)日：2006-02-23
申请号：US11192041
申请日：2005-07-29
申请人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
发明人： Manabu Iwata , Chishio Koshimizu , Yohei Yamazawa
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32183
摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.
摘要翻译：用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

46. 发明申请

US20060037701A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037701A1
公开(公告)日：2006-02-23
申请号：US11156559
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

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