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41. 发明申请

US20120292672A1 FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION 有权
标题翻译： FINFET集成电路及其制造方法
公开(公告)号：US20120292672A1
公开(公告)日：2012-11-22
申请号：US13111741
申请日：2011-05-19
申请人： Jin CHO
发明人： Jin CHO
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L21/823431 , H01L29/66795 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： FINFET ICs and methods for their fabrication are provided. In accordance with one embodiment a FINFET IC is fabricated by forming in a substrate a region doped with an impurity of a first doping type. The substrate region is etched to form a recess defining a fin having a height and sidewalls and the recess adjacent the fin is filled with an insulator having a thickness less than the height. Spacers are formed on the sidewalls and a portion of the insulator is etched to expose a portion of the sidewalls. The exposed portion of the sidewalls is doped with an impurity of the first doping type, the exposed sidewalls are oxidized, and the sidewall spacers are removed. A gate insulator and gate electrode are formed overlying the fin, and end portions of the fin are doped with an impurity of a second doping type to form source and drain regions.
摘要翻译：提供FINFET IC及其制造方法。根据一个实施例，通过在衬底中形成掺杂有第一掺杂类型的杂质的区域来制造FINFET IC。蚀刻衬底区域以形成限定具有高度和侧壁的翅片的凹部，并且与翅片相邻的凹部填充有厚度小于该高度的绝缘体。隔板形成在侧壁上，并且绝缘体的一部分被蚀刻以暴露侧壁的一部分。侧壁的暴露部分掺杂有第一掺杂类型的杂质，暴露的侧壁被氧化，并且去除侧壁间隔物。栅极绝缘体和栅电极形成在鳍的上方，并且鳍的端部掺杂有第二掺杂类型的杂质以形成源极和漏极区。

42. 发明申请

US20120266172A1 APPARATUS AND METHOD FOR CONTROLLING A VIRTUAL MACHINE 审中-公开
标题翻译：用于控制虚拟机的装置和方法
公开(公告)号：US20120266172A1
公开(公告)日：2012-10-18
申请号：US13446988
申请日：2012-04-13
申请人： Ji-Woong Byun , Jae-Wook Jeo , Seong-Jin Cho , Jong-Hyun Park , Sang-Chul Lee , Hae-II Hyun
发明人： Ji-Woong Byun , Jae-Wook Jeo , Seong-Jin Cho , Jong-Hyun Park , Sang-Chul Lee , Hae-II Hyun
IPC分类号： G06F9/455
CPC分类号： G06F9/45516
摘要： The present disclosure relates to an apparatus for controlling a virtual machine in a device. The apparatus comprises a virtualization requesting part and a controlling part. The virtualization requesting part is configured to transmit a first instruction word for controlling the virtual machine to an independent virtualization apparatus. The controlling part is configured to execute an operation corresponding to a second instruction word received from the virtualization apparatus.
摘要翻译：本公开涉及一种用于控制设备中的虚拟机的装置。该装置包括虚拟化请求部分和控制部分。虚拟化请求部分被配置为向独立虚拟化设备发送用于控制虚拟机的第一指令字。控制部被配置为执行与从虚拟化装置接收的第二指令字对应的动作。

43. 发明申请

US20120248465A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20120248465A1
公开(公告)日：2012-10-04
申请号：US13180322
申请日：2011-07-11
申请人： Jin-Baek Choi , Ji-Young Choung , Joon-Gu Lee , Se-Jin Cho , Won-Jong Kim , Hee-Joo Ko , Yeon-Hwa Lee , Young-Woo Song , Jong-Hyuk Lee
发明人： Jin-Baek Choi , Ji-Young Choung , Joon-Gu Lee , Se-Jin Cho , Won-Jong Kim , Hee-Joo Ko , Yeon-Hwa Lee , Young-Woo Song , Jong-Hyuk Lee
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L51/5218 , H01L27/3246 , H01L51/5215 , H01L51/5265 , H01L2251/5315
摘要： An organic light emitting diode display capable of reducing the shortening of image stacking lifetime caused by the residue of the barrier ribs produced during the forming of the barrier ribs is provided. The display includes: a substrate; a first pixel electrode formed on the substrate; barrier ribs formed on the substrate, and having an opening exposing the first pixel electrode; a second pixel electrode formed on the first pixel electrode; an organic light emitting member formed on the second pixel electrode; an organic light emitting member formed on the second pixel electrode; a common electrode formed on the organic light emitting member; and a thin film encapsulation member covering the common electrode. The width of the second pixel electrode is greater than the exposure width of the first pixel electrode exposed through the opening of the barrier ribs.
摘要翻译：提供一种有机发光二极管显示器，其能够减少在障壁形成期间产生的障壁残留物引起的图像堆叠寿命缩短。显示器包括：基板; 形成在所述基板上的第一像素电极; 形成在所述基板上的阻挡肋，并且具有暴露所述第一像素电极的开口; 形成在所述第一像素电极上的第二像素电极; 形成在所述第二像素电极上的有机发光部件; 形成在所述第二像素电极上的有机发光部件; 形成在有机发光部件上的公共电极; 以及覆盖公共电极的薄膜封装构件。第二像素电极的宽度大于通过隔壁的开口暴露的第一像素电极的曝光宽度。

44. 发明申请

US20120235144A1 ORGANIC LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机发光二极管装置及其制造方法
公开(公告)号：US20120235144A1
公开(公告)日：2012-09-20
申请号：US13207218
申请日：2011-08-10
申请人： Ji-Young Choung , Jin-Baek Choi , Joon-Gu Lee , Se-Jin Cho , Hee-Joo Ko , Yeon-Hwa Lee , Won-Jong Kim , Young-Woo Song , Jong-Hyuk Lee
发明人： Ji-Young Choung , Jin-Baek Choi , Joon-Gu Lee , Se-Jin Cho , Hee-Joo Ko , Yeon-Hwa Lee , Won-Jong Kim , Young-Woo Song , Jong-Hyuk Lee
IPC分类号： H01L33/36 , H01L33/40 , H01L33/16
CPC分类号： H01L51/5231 , H01L27/3244 , H01L2251/5315
摘要： An organic light emitting diode device includes a substrate, a thin film transistor on the substrate, a first pixel electrode electrically connected to the thin film transistor, a pixel defining layer on the first pixel electrode and partitioning a light emitting region, a second pixel electrode contacting the first pixel electrode at the light emitting region, a light emitting layer contacting the second pixel electrode at the light emitting region, and a common electrode on the light emitting layer; and a method of manufacturing the same is provided.
摘要翻译：一种有机发光二极管装置，包括基板，基板上的薄膜晶体管，电连接到薄膜晶体管的第一像素电极，第一像素电极上的像素限定层和分配发光区域，第二像素电极在发光区域处接触第一像素电极，在发光区域接触第二像素电极的发光层和发光层上的公共电极; 并提供其制造方法。

45. 发明授权

US08214848B2 Method and apparatus for installing printer drivers of image forming apparatuses in printing environment employing universal printer driver 有权
标题翻译：在使用通用打印机驱动程序的打印环境中安装图像形成装置的打印机驱动程序的方法和装置
公开(公告)号：US08214848B2
公开(公告)日：2012-07-03
申请号：US12142101
申请日：2008-06-19
申请人： Don-seon Lee , Soung-jin Cho
发明人： Don-seon Lee , Soung-jin Cho
IPC分类号： G06F3/00
CPC分类号： G06F3/1204 , G06F3/122 , G06F3/1225 , G06F3/1284 , G06F3/1285
摘要： A method of installing printer drivers of image forming apparatuses in an environment that employs a universal printer driver is provided. Accordingly, it is possible to provide an environment for using printer drivers of image forming apparatuses that is convenient to a user by deleting printer drivers of image forming apparatuses that were previously installed by using the universal printer driver and by installing printer drivers of image forming apparatuses corresponding to a predetermined standard.
摘要翻译：提供了一种在采用通用打印机驱动程序的环境中安装图像形成装置的打印机驱动程序的方法。因此，可以通过删除先前通过使用通用打印机驱动程序安装的图像形成装置的打印机驱动程序和通过安装图像形成装置的打印机驱动程序来提供使用对用户方便的图像形成装置的打印机驱动程序的环境对应于预定标准。

46. 发明申请

US20120161813A1 SWITCH APPARATUS FOR FIELD PROGRAMMABLE GATE ARRAY 审中-公开
标题翻译：用于现场可编程门阵列的开关装置
公开(公告)号：US20120161813A1
公开(公告)日：2012-06-28
申请号：US13305446
申请日：2011-11-28
申请人： Han Jin CHO , Young Hwan BAE
发明人： Han Jin CHO , Young Hwan BAE
IPC分类号： H03K19/177
CPC分类号： H03K19/17748 , H03K19/0008
摘要： A switch apparatus of a Field Programmable Gate Array (FPGA) includes a pass transistor configured to switch and transfer an input signal to a logic cell according to a value of a configuration memory, and a voltage maintaining unit connected between the configuration memory and a gate of the pass transistor and configured to delay a drop of a gate voltage.
摘要翻译：现场可编程门阵列（FPGA）的开关装置包括：传输晶体管，被配置为根据配置存储器的值来切换输入信号并将其传送到逻辑单元;以及电压保持单元，连接在配置存储器和门并且被配置为延迟栅极电压的下降。

47. 发明申请

US20120155077A1 LIGHT EMITTING DIODE FLOODLIGHT 审中-公开
标题翻译：发光二极管荧光灯
公开(公告)号：US20120155077A1
公开(公告)日：2012-06-21
申请号：US13038780
申请日：2011-03-02
申请人： Sang Ok KIM , Byung Oh KIM , Min Jin CHO , In Su LEE
发明人： Sang Ok KIM , Byung Oh KIM , Min Jin CHO , In Su LEE
IPC分类号： F21V29/00 , F21V21/00 , F21V13/02
CPC分类号： F21V7/048 , F21S8/036 , F21V7/09 , F21V15/01 , F21V21/116 , F21V21/30 , F21V23/007 , F21V23/02 , F21V29/507 , F21V29/713 , F21V29/74 , F21Y2107/40 , F21Y2115/10
摘要： A light emitting diode floodlight includes a hollow housing, a lens, a cover, a light source, an illumination reflector, an intermediate portion, and a power source. The cover is coupled to the end of the housing and configured to hold and support the lens. The light source has a pyramidal frustum-shaped portion installed at an opposite end of the housing. The illumination reflector is installed within the housing so as to surround a periphery of the pyramidal frustum-shaped portion of the light source. The intermediate portion is connected to a first heat sink of the light source and has a second heat sink on an outer peripheral surface thereof. The power source has a power supply electrically connected to the light source.
摘要翻译：发光二极管泛光灯包括中空壳体，透镜，盖子，光源，照明反射器，中间部分和电源。盖子耦合到壳体的端部并且被配置为保持和支撑透镜。光源具有安装在壳体的相对端的锥形截头锥形部分。照明反射器安装在壳体内，以便围绕光源的锥体截头锥形部分的周边。中间部分连接到光源的第一散热器，并且在其外周表面上具有第二散热器。电源具有电连接到光源的电源。

48. 发明申请

US20120103589A1 HEAT DISSIPATION DEVICE FOR POWER CONVERSION MODULE 有权
标题翻译：电源转换模块的散热装置
公开(公告)号：US20120103589A1
公开(公告)日：2012-05-03
申请号：US13037803
申请日：2011-03-01
申请人： Young Ho Sohn , Kyu Bum Han , Young Jin Cho , Seog Moon Choi
发明人： Young Ho Sohn , Kyu Bum Han , Young Jin Cho , Seog Moon Choi
IPC分类号： F28F7/00
CPC分类号： H05K7/209 , H05K7/20409
摘要： Disclosed herein is a heat dissipation device for a power conversion module. The device includes a casing, a high-heat-dissipation heat sink and a circuit board. The casing includes a heat-dissipation fin unit which has heat dissipation fins arranged at positions spaced apart from each other by predetermined intervals. The casing has a mounting space therein. The high-heat-dissipation heat sink is installed in the mounting space of the casing. The circuit board is coupled to a lower surface of the casing. Therefore, the weight and size of the heat dissipation device can be reduced. In addition, the heat sink and the casing having the heat dissipation fins dissipate heat at the same time, thus enhancing the heat dissipation efficiency. Moreover, in an optimal design, the high-heat-dissipation heat sink is located at a position corresponding to a part which generates high heat so that the heat dissipation efficiency can be maximized.
摘要翻译：这里公开了一种用于电力转换模块的散热装置。该装置包括壳体，高散热散热器和电路板。壳体包括散热翅片单元，其散热片布置在彼此间隔预定间隔的位置处。壳体在其中具有安装空间。高散热散热器安装在外壳的安装空间中。电路板耦合到壳体的下表面。因此，可以减小散热装置的重量和尺寸。此外，散热片和具有散热片的壳体同时散热，从而提高散热效率。此外，在最佳设计中，高散热散热器位于与产生高热量的部分相对应的位置，从而可以使散热效率最大化。

49. 发明授权

US08153549B2 Catalyst for treating exhaust gas and device for treating exhaust gas using the same 有权
标题翻译：用于处理废气的催化剂和使用其的处理废气的装置
公开(公告)号：US08153549B2
公开(公告)日：2012-04-10
申请号：US11665475
申请日：2004-11-01
申请人： Jin Cho , Kenji Tanikawa
发明人： Jin Cho , Kenji Tanikawa
IPC分类号： B01J23/00 , B01J21/00 , B01J20/00
CPC分类号： B01J37/0018 , B01D53/945 , B01J23/40 , B01J23/42 , B01J23/464 , B01J23/63 , B01J35/10 , B01J37/0219 , B01J37/0234 , B01J37/0244 , F01N3/28 , Y02T10/22
摘要： A catalyst for treating an exhaust gas has at least a carrier and plural layers formed on the carrier, wherein at least one layer of the above plural layers has an interstice in the layer, and at least one layer of the above plural layers contains a catalyst component. The above catalyst for treating an exhaust gas allows the enhancement of the diffusion of an exhaust gas in a catalyst layer, which results in the improvement of catalyst efficiency.
摘要翻译：用于处理废气的催化剂至少在载体上形成载体和多层，其中上述多层中的至少一层在该层中具有空隙，并且至少一层上述多层含有催化剂零件。用于处理废气的上述催化剂允许增加催化剂层中的废气的扩散，这导致催化剂效率的提高。

50. 发明授权

US08143660B2 Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same 失效
标题翻译：具有高介电常数的氧化膜的制造方法，使用该方法形成的电介质膜的电容器及其制造方法
公开(公告)号：US08143660B2
公开(公告)日：2012-03-27
申请号：US10797046
申请日：2004-03-11
申请人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Burn-seok Seo , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/108
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45525 , C23C16/45529 , C23C16/45531 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/022 , H01L21/02205 , H01L21/02304 , H01L21/3142 , H01L21/31616 , H01L21/31645
摘要： Provided are a method for manufacturing a high k-dielectric oxide film, a capacitor having a dielectric film formed using the method, and a method for manufacturing the capacitor. A high k-dielectric oxide film is manufactured by (a) loading a semiconductor substrate in an ALD apparatus, (b) depositing a reaction material having a predetermined composition rate of a first element and a second element on the semiconductor substrate, and (c) forming a first high k-dielectric oxide film having the two elements on the semiconductor substrate by oxidizing the reaction material such that the first element and the second element are simultaneously oxidized. In this method, the size of an apparatus is reduced, productivity is enhanced, and manufacturing costs are lowered. Further, the high k-dielectric oxide film exhibits high dielectric constant and low leakage current and trap density. Thus, a capacitor including the high k-dielectric oxide film as a dielectric film also exhibits low leakage current and trap density.
摘要翻译：提供一种制造高k电介质氧化膜的方法，具有使用该方法形成的电介质膜的电容器和制造该电容器的方法。（a）在ALD装置中加载半导体衬底，（b）在半导体衬底上沉积具有第一元素和第二元素的预定组成比的反应材料，制备高k电介质氧化物膜，和（c ）通过氧化反应材料形成具有两个元件的第一高k电介质氧化物膜，以使第一元件和第二元件同时被氧化。在该方法中，装置的尺寸减小，生产率提高，制造成本降低。此外，高k电介质氧化膜表现出高的介电常数和低的漏电流和阱密度。因此，包括作为电介质膜的高k电介质氧化膜的电容器也具有低泄漏电流和阱密度。

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