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41. 发明授权

US06064477A Method of and apparatus for inspecting reticle for defects 失效
标题翻译：用于检查掩模版的缺陷的方法和装置
公开(公告)号：US06064477A
公开(公告)日：2000-05-16
申请号：US644740
申请日：1996-05-10
申请人： Shunichi Matsumoto , Hiroaki Shishido
发明人： Shunichi Matsumoto , Hiroaki Shishido
IPC分类号： G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , G03F1/32 , G03F1/84 , H01L21/027 , H01L21/30 , H01L21/66
CPC分类号： G01N21/94 , G01N21/956 , G01N21/95607 , G01N21/95623 , G03F1/84
摘要： A reticle inspecting apparatus for inspecting a reticle for defects has a transparent of translucent substrate, a circuit pattern formed on the front surface of the substrate, and a phase shifter formed of a light-transmissive film on the front surface of the substrate. In the apparatus, a detection optical system is disposed so as not to gather directly reflected light and directly transmitted light and so as to gather scattered light and diffracted light which has been scattered and diffracted, respectively, by the reticle. This detection optical system enables separation of the gathered light by direction of illumination using detectors and spatial filters disposed respectively on Fourier transform planes to intercept light diffracted by straight edges of the circuit pattern, so as to form images of gathered light on the detectors. A signal processing system having a signal processing unit calculates defects on the basis of the output signals of the detectors and displays the calculated data on a display.
摘要翻译：用于检查掩模版用于缺陷的掩模版检查装置具有透光性的基板，形成在基板的前表面的电路图案，以及在基板的前表面上由透光膜形成的移相器。在该装置中，检测光学系统被设置成不会直接聚集反射光并直接透射光，以分散散射光和被散射和衍射的衍射光。该检测光学系统能够使用分别设置在傅立叶变换平面上的检测器和空间滤光器的照明方向来分离收集的光以截取由电路图案的直边衍射的光，从而在检测器上形成聚光的图像。具有信号处理单元的信号处理系统基于检测器的输出信号计算缺陷，并将计算出的数据显示在显示器上。

42. 发明授权

US5410400A Foreign particle inspection apparatus 失效
标题翻译：国外颗粒检测仪器
公开(公告)号：US5410400A
公开(公告)日：1995-04-25
申请号：US902819
申请日：1992-06-23
申请人： Hiroaki Shishido , Minori Noguchi
发明人： Hiroaki Shishido , Minori Noguchi
IPC分类号： G01N21/94 , G01N21/956 , G01N21/88
CPC分类号： G01N21/94 , G01N21/95623
摘要： A foreign particle inspection apparatus includes a detection optical system (4) for condensing scattered light generated by slant illumination (2) by an optical system (41) with a NA of more than 0.4 from the rear side of a sample using a transparent or semitransparent substrate having an opaque circuit pattern. The circuit pattern, such as a reticle, etc., has a phase shift film for improving the patterning resolution, for shielding diffracted light from the circuit pattern by a spatial filter (44) mounted on the Fourier transform plane, and for forming images on a detector (51). A circuit (113) is also provided for correcting detected values of the detector according to uneven illumination, and a circuit for obtaining the added value of detected values of 2 by 2 pixels. A circuit (114) is provided for obtaining the maximum value of four added values which are shifted pixel by pixel in the four directions around each detector pixel. A circuit (112) is provided for storing the detected result in a memory where the substrate sample is divided into blocks every several hundreds pixels. By this arrangement small foreign particles of the order of submicrons adhered on the substrate can be separated and detected easily and stably from the circuit pattern principally using a simple optical structure.
摘要翻译：外来粒子检查装置包括检测光学系统（4），用于通过光学系统（41）将由倾斜照明（2）产生的散射光从样品的后侧以大于0.4的NA聚集，所述检测光学系统使用透明或半透明衬底具有不透明的电路图案。诸如掩模版等的电路图案具有用于改善图形分辨率的相移膜，用于通过安装在傅里叶变换平面上的空间滤光器（44）屏蔽来自电路图案的衍射光，并且用于在检测器（51）。还提供一种用于根据不均匀照明校正检测器的检测值的电路（113），以及用于获得2×2像素的检测值的相加值的电路。提供电路（114），用于获得围绕每个检测器像素的四个方向逐个像素移位的四个相加值的最大值。提供了一种电路（112），用于将检测结果存储在存储器中，其中衬底样品被分成几百个像素的块。通过这种布置，主要使用简单的光学结构，可以从电路图案容易且稳定地分离和稳定地分离和检测附着在基板上的亚微米级的小的外来颗粒。

43. 发明申请

US20130230795A1 PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：US20130230795A1
公开(公告)日：2013-09-05
申请号：US13854439
申请日：2013-04-01
申请人： Hiroyuki IWASHITA , Atsushi KOMINATO , Masahiro HASHIMOTO , Hiroaki SHISHIDO
发明人： Hiroyuki IWASHITA , Atsushi KOMINATO , Masahiro HASHIMOTO , Hiroaki SHISHIDO
IPC分类号： G03F1/50
CPC分类号： G03F1/50 , G03F1/46 , G03F1/54
摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.
摘要翻译：光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。光掩模坯料具有形成在其上的透光性基板和遮光膜。遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为前表面抗反射层在2nm的范围内变化。选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。

44. 发明授权

US08404406B2 Photomask blank and method for manufacturing the same 有权
标题翻译：光掩模坯料及其制造方法
公开(公告)号：US08404406B2
公开(公告)日：2013-03-26
申请号：US12935519
申请日：2009-03-31
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G03F1/22
CPC分类号： G03F1/32 , G03F1/50
摘要： The present invention provides a photomask blank in which a light-shielding film consisting of a plurality of layers is provided on a light transmissive substrate, wherein a layer that is provided to be closest to the front surface is made of CrO, CrON, CrN, CrOC or CrOCN, and wherein the atom number density of the front-surface portion of the light-shielding film is 9×1022 to 14×1022 atms/cm3.
摘要翻译：本发明提供了一种光掩模坯料，其中由多层构成的遮光膜设置在透光基板上，其中设置成最靠近前表面的层由CrO，CrON，CrN， CrOC或CrOCN，其中遮光膜的前表面部分的原子数密度为9×1022〜14×1022atms / cm3。

45. 发明申请

US20130059236A1 MASK BLANK, TRANSFER MASK AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：掩模层，转移掩模和制造半导体器件的工艺
公开(公告)号：US20130059236A1
公开(公告)日：2013-03-07
申请号：US13605125
申请日：2012-09-06
申请人： Hiroaki SHISHIDO , Osamu NOZAWA , Atsushi KOMINATO
发明人： Hiroaki SHISHIDO , Osamu NOZAWA , Atsushi KOMINATO
IPC分类号： G03F1/00 , B32B17/06 , G03F7/20
CPC分类号： C03C17/3411 , C03C17/3423 , C03C17/3435 , G03F1/38
摘要： The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
摘要翻译：本发明的掩模坯料包括玻璃基板和形成在玻璃基板的主表面上的薄膜，该薄膜包括含有钽并且基本上不含氢的材料，掩模坯料在主体之间具有侵入抑制膜玻璃基板的表面和抑制氢从玻璃基板侵入薄膜的薄膜。

46. 发明授权

US08329364B2 Phase shift mask blank and phase shift mask 有权
标题翻译：相移掩模空白和相移掩模
公开(公告)号：US08329364B2
公开(公告)日：2012-12-11
申请号：US13001365
申请日：2009-06-25
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G06F1/22
CPC分类号： G03F1/58 , G03F1/32
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a lower layer, an interlayer and an upper layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 60 nm or less; the lower layer is made of a film containing a metal and has a first etching rate; the upper layer is made of a film containing a metal and has a third etching rate; the interlayer is made of a film containing the same metal as that contained in the lower layer or the upper layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the interlayer is 30% or less of the thickness of the entire light-shielding film.
摘要翻译：本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中从靠近透光基底的一侧依次层叠下层，中间层和上层; 整个遮光膜的厚度为60nm以下; 下层由含有金属的膜制成，具有第一蚀刻速率; 上层由含有金属的膜制成，具有第三蚀刻速率; 中间层由含有与下层或上层相同的金属的膜制成，具有比第一蚀刻速度和第三蚀刻速度低的第二蚀刻速率; 并且中间层的厚度为整个遮光膜的厚度的30％以下。

47. 发明申请

US20110244375A1 MASK BLANK, TRANSFER MASK, METHODS OF MANUFACTURING THE SAME AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：掩模布，转印掩模，制造方法和制造半导体器件的方法
公开(公告)号：US20110244375A1
公开(公告)日：2011-10-06
申请号：US13076254
申请日：2011-03-30
申请人： Osamu NOZAWA , Hiroaki SHISHIDO , Toshiyuki SUZUKI
发明人： Osamu NOZAWA , Hiroaki SHISHIDO , Toshiyuki SUZUKI
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/50 , G03F1/54 , G03F1/58
摘要： In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.
摘要翻译：在用于制造转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层。高氧化层位于与透明基板侧相反的一侧。

48. 发明申请

US20110070533A1 PHOTOMASK BLANK, PHOTOMASK , AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK和制造光电隔离层的方法
公开(公告)号：US20110070533A1
公开(公告)日：2011-03-24
申请号：US12935464
申请日：2009-03-31
申请人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
发明人： Hiroyuki Iwashita , Hiroaki Shishido , Atsushi Kominato , Masahiro Hashimoto
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/54 , G03F1/80
摘要： The present invention provides a photomask blank used for producing a photomask to which an ArF excimer laser light is applied, wherein: a light-shielding film is provided on a light transmissive substrate; the light-shielding film has a laminated structure in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order from the side close to the light transmissive substrate; the thickness of the entire light-shielding film is 70 nm or less; the back-surface antireflection layer is made of a film containing a metal and has a first etching rate; the front-surface antireflection layer is made of a film containing a metal and has a third etching rate; the light-shielding layer is made of a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer and has a second etching rate that is lower than the first etching rate and the third etching rate; and the thickness of the light-shielding layer is 45% or less of the thickness of the entire light-shielding film.
摘要翻译：本发明提供一种用于制造施加了ArF准分子激光的光掩模的光掩模坯料，其中：在透光基板上设置有遮光膜; 遮光膜具有层叠结构，其中背面防反射层，遮光层和前表面抗反射层从靠近透光基板的一侧依次层叠; 整个遮光膜的厚度为70nm以下; 背面抗反射层由含有金属的膜制成，具有第一蚀刻速率; 前表面抗反射层由含有金属的膜制成，具有第三蚀刻速率; 遮光层由含有与背面防反射层或前表面防反射层中所含的金属相同的金属的膜制成，并且具有比第一蚀刻速率和第三蚀刻速率低的第二蚀刻速率 ; 遮光层的厚度为整个遮光膜的厚度的45％以下。

49. 发明授权

US5098191A Method of inspecting reticles and apparatus therefor 失效
标题翻译：检查掩模版及其设备的方法
公开(公告)号：US5098191A
公开(公告)日：1992-03-24
申请号：US424196
申请日：1989-10-19
申请人： Minori Noguchi , Hiroaki Shishido , Mitsuyoshi Koizumi , Nobuyuki Akiyama , Toshihilo Nakata
发明人： Minori Noguchi , Hiroaki Shishido , Mitsuyoshi Koizumi , Nobuyuki Akiyama , Toshihilo Nakata
IPC分类号： G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , G03F1/00 , H01L21/027 , H01L21/30 , H01L21/66
CPC分类号： G03F1/84 , G01N21/95607 , G01N21/95623 , G01N2021/95676 , G01N21/94
摘要： Method of inspecting reticles and an apparatus therefor, where means for holding and transferring an inspected reticle and a standard reticle respectively, means for illuminating light with spatial coherency adjusted onto both reticles respectively, and an objective lens for collecting transmitted light or reflected light from the illuminated body produced by the illuminating, are installed on respective Fourier transformation surfaces of both reticle surfaces, and a light blocking plate for blocking light corresponding to the adjusted spatial coherency is installed, and electric signals obtained are compared thereby a defect or a foreign substance existing on the inspected reticle can be detected.
摘要翻译：检测掩模版的方法及其装置，分别用于保持和传送被检查的掩模版和标准掩模版的装置，用于分别照射调节到两个光罩上的空间一致性的光，以及用于收集透射光或反射光的物镜通过照明产生的照明体安装在两个标线片表面的相应的傅立叶变换表面上，并且安装用于阻挡与调整的空间相干性相对应的光的遮光板，并且比较所获得的电信号，从而存在缺陷或异物可以检测到被检查的掩模版。

50. 发明授权

US08846274B2 Mask blank, transfer mask and process for manufacturing semiconductor devices 有权
标题翻译：掩模空白，传输掩模和制造半导体器件的工艺
公开(公告)号：US08846274B2
公开(公告)日：2014-09-30
申请号：US13605125
申请日：2012-09-06
申请人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
发明人： Hiroaki Shishido , Osamu Nozawa , Atsushi Kominato
IPC分类号： G03F1/00 , G03F1/50
CPC分类号： C03C17/3411 , C03C17/3423 , C03C17/3435 , G03F1/38
摘要： The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
摘要翻译：本发明的掩模坯料包括玻璃基板和形成在玻璃基板的主表面上的薄膜，该薄膜包括含有钽并且基本上不含氢的材料，掩模坯料在主体之间具有侵入抑制膜玻璃基板的表面和抑制氢从玻璃基板侵入薄膜的薄膜。

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