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31. 发明申请

US20040009437A1 Method of 193 NM photoresist stabilization by the use of ion implantation 有权
标题翻译：通过使用离子注入方法对193 NM光阻稳定化
公开(公告)号：US20040009437A1
公开(公告)日：2004-01-15
申请号：US10191546
申请日：2002-07-10
发明人： Jun Sung Chun , Mehran Sedigh , Christ Ford
IPC分类号： G03F007/16 , G03F007/20 , G03F007/40 , H01L021/20 , H01L021/36 , H01L021/31 , H01L021/469
CPC分类号： H01L21/31144 , G03F7/405 , H01L21/0273 , H01L21/0274
摘要： A method of forming a photoresist includes forming a photoresist and patterning/developing it according to conventional methods. The photoresist is then subjected to ion implantation. The ions may be selected from the group consisting of argon, boron, boron fluoride, arsenic, phosphorous and nitrogen. The ion implantation during processing of the photoresist provides a stabilized photoresist and helps reduce CD loss, loss of the photoresist and formation of pin holes and striations.
摘要翻译：形成光致抗蚀剂的方法包括根据常规方法形成光致抗蚀剂并对其进行图案化/显影。然后对光致抗蚀剂进行离子注入。离子可以选自氩，硼，氟化硼，砷，磷和氮。在光致抗蚀剂加工期间的离子注入提供了稳定的光致抗蚀剂，并且有助于减少CD损失，光致抗蚀剂的损失以及针孔和条纹的形成。

32. 发明申请

US20040009433A1 Pattern formation method 失效
标题翻译：图案形成方法
公开(公告)号：US20040009433A1
公开(公告)日：2004-01-15
申请号：US10610920
申请日：2003-07-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F007/20 , G03F007/38
CPC分类号： G03F7/26 , G03F7/168
摘要： After forming a resist film from a positive chemically amplified resist material, an insolubilization treatment for making the surface of the resist film insoluble in a developer is carried out. After the insolubilization treatment, pattern exposure is performed by selectively irradiating the resist film with exposing light. Thereafter, the resist film is developed so as to form a resist pattern made of an unexposed portion of the resist film.
摘要翻译：在由正性化学放大抗蚀剂材料形成抗蚀剂膜之后，进行用于使抗蚀剂膜的表面不溶于显影剂的不溶解处理。在不溶解处理之后，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。此后，抗蚀剂膜被显影以形成由抗蚀剂膜的未曝光部分制成的抗蚀剂图案。

33. 发明申请

US20040009431A1 Method of exposing semiconductor device 审中-公开
标题翻译：曝光半导体器件的方法
公开(公告)号：US20040009431A1
公开(公告)日：2004-01-15
申请号：US10298653
申请日：2002-11-19
申请人： MITSUBISHI DENKI KABUSHIKI KAISHA
发明人： Atsushi Amo , Atsushi Hachisuka
IPC分类号： G03F007/20
CPC分类号： G03F7/70066 , G03F1/50 , G03F7/70433
摘要： In a semiconductor exposure apparatus (10), four blinds (3a-3d) movable back and forth in the horizontal direction are provided on a path of light (L), to allow an irradiated region with light (L) on a mask (4) to be limited to an arbitrary rectangular region. On the other hand, a plurality of mask patterns different from each other are formed on the mask (4). When exposing one of the patterns, the blinds (3a-3d) are arranged such that the irradiated region with light (L) is positioned only over the one of the patterns and the periphery of the one of the patterns is shielded. This allows the plurality of mask patterns to be exposed with the single mask (4), achieving a reduction in costs for mask manufacturing and manufacturing time.
摘要翻译：在半导体曝光装置（10）中，在光（L）的路径上设置在水平方向上可前后移动的四个百叶窗（3a-3d），以将掩模（4）上的照明区域（L））被限制在任意的矩形区域。另一方面，在掩模（4）上形成彼此不同的多个掩模图案。当露出图案之一时，百叶窗（3a-3d）被布置成使得具有光（L）的照射区域仅位于图案中的一个上，并且一个图案的周边被屏蔽。这允许多个掩模图案用单个掩模（4）暴露，从而实现了掩模制造和制造时间的成本的降低。

34. 发明申请

US20040009417A1 Method for making fine prints from oscillations in fresnel diffraction patterns in ultra high resolution lithography 审中-公开
$Method for making fine prints from oscillations in fresnel diffraction patterns in ultra high resolution lithography$
标题翻译：用于以超高分辨率光刻技术在菲涅耳衍射图案中的振荡进行精细打印的方法
公开(公告)号：US20040009417A1
公开(公告)日：2004-01-15
申请号：US10418680
申请日：2003-04-21
发明人： Antony J. Bourdillon
IPC分类号： G03F007/20 , G03F007/26 , G21K005/00 , G03F001/00
CPC分类号： G03F7/70325 , G03F7/7035 , G03F7/70466
摘要： This method of Fresnel oscillations takes advantage of oscillation effects within Fresnel patterns to produce finer resolution than can be printed in the prior art. Selected patterns are printed by selecting the mask-wafer gap for a given wavelength, or range of wavelengths, and given mask feature size. Following the principles of the coherence and with an optimization of bandwidth, the method of Fresnel oscillations employs paradigms or simulations in mask shapes to print specified patterns. By these methods, exposure times and throughput are optimized, consistent with required resolution in printing. Mask-wafer gaps and clear mask feature sizes are kept large. With multiple exposures, fine oscillation patterns in two dimensions can be printed with demagnification factors down to 20X the size of clear mask features.
摘要翻译：菲涅尔振荡的这种方法利用菲涅耳图案中的振荡效应来产生比现有技术中可印刷的更精细的分辨率。通过选择给定波长或波长范围的掩模 - 晶片间隙以及给定掩模特征尺寸来打印所选择的图案。按照相干原理和带宽优化，菲涅尔振荡的方法采用掩模形状的范例或模拟来打印指定的图案。通过这些方法，优化曝光时间和产量，与印刷中所需的分辨率一致。掩模晶片间隙和透明掩模特征尺寸保持较大。通过多次曝光，两个维度的精细振荡图案可以打印成具有降低到清晰掩模特征尺寸的20倍的缩小因子。

35. 发明申请

US20040008298A1 Photo-patterned light polarizing films 有权
标题翻译：光图案偏光膜
公开(公告)号：US20040008298A1
公开(公告)日：2004-01-15
申请号：US10615954
申请日：2003-07-10
申请人： The Hong Kong University of Science and Technology
发明人： Hoi-Sing Kwok , Wing-Chiu Yip , Vladimir Chigrinov , Vladimir Kozenkov
IPC分类号： G02F001/1335 , G02F001/1337 , G02F001/03 , C09K019/00 , G03F007/008 , G03F007/016 , G03F007/34 , G03F007/20
CPC分类号： G02B5/3033 , G02B5/3016 , G02F1/133528 , G02F2001/133538 , G03F7/0007 , Y10T428/10 , Y10T428/1041
摘要： This invention relates to methods for preparing photo-patterned mono- or polychromatic, polarizing films. The polarizer can be pixelated into a number of small regions wherein some of the regions have one orientation of the principal neutral or color absorbing axis; and some other of the said regions have another orientation of the principal neutral or color absorbing axis. The axis orientation is determined by the polarization vector of actinic radiation and the multi-axes orientation is possible by a separated masked exposure. This polarizer can be placed on the interior substrate surface of the LCD cell.
摘要翻译：本发明涉及制备光刻图案的单色或多色偏光膜的方法。偏振器可以像素化成许多小区域，其中一些区域具有主要中性色或吸收轴的一个取向; 并且所述区域中的一些其它区域具有主要中性色或吸收轴的另一取向。轴取向由光化辐射的偏振矢量确定，并且通过分离的掩蔽曝光可以实现多轴取向。该偏振器可以放置在LCD单元的内部衬底表面上。

36. 发明申请

US20040000427A1 Process for creating vias for circuit assemblies 失效
标题翻译：为电路组件创建通孔的工艺
公开(公告)号：US20040000427A1
公开(公告)日：2004-01-01
申请号：US10184387
申请日：2002-06-27
发明人： Alan E. Wang , Kevin C. Olson
IPC分类号： H05K001/03 , H05K001/09 , B32B003/10 , H05K001/11 , H01R012/04 , B21B001/00 , B21C027/00 , B21D028/00 , G03F007/20 , G03F007/30 , G03F007/40
CPC分类号： H05K3/44 , H05K1/056 , H05K3/002 , H05K3/0052 , H05K3/4641 , H05K3/4644 , H05K2201/0166 , H05K2201/0909 , H05K2201/0919 , H05K2201/09554 , H05K2203/135 , Y10T29/49126 , Y10T29/49156 , Y10T29/49167 , Y10T428/12361 , Y10T428/24322
摘要： Provided is a process for creating vias for a circuit assembly including the steps of (a) applying a curable coating composition to a substrate, some or all of which is electrically conductive, to form an uncured coating thereon; (b) applying a resist over the uncured coating; (c) imaging the resist in predetermined locations; (d) developing the resist to expose predetermined areas of the uncured coating; (e) removing the exposed areas of the uncured coating; and (f heating the coated substrate of step (e) to a temperature and for a time sufficient to cure the coating. Also disclosed is a process of fabricating a circuit assembly.
摘要翻译：提供了一种用于创建电路组件的通孔的方法，包括以下步骤：（a）将可固化涂料组合物施加到基底上，其中一些或全部导电，以在其上形成未固化的涂层; （b）在未固化的涂层上涂覆抗蚀剂; （c）在预定位置对抗蚀剂进行成像; （d）显影抗蚀剂以暴露未固化涂层的预定区域; （e）去除未固化涂层的暴露区域; 和（f）将步骤（e）的涂布基材加热到足以固化涂层的温度和时间。还公开了一种制造电路组件的方法。

37. 发明申请

US20030235789A1 Photolithography process for Mask ROM coding 审中-公开
标题翻译：掩模ROM编码的光刻工艺
公开(公告)号：US20030235789A1
公开(公告)日：2003-12-25
申请号：US10065711
申请日：2002-11-12
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Ching-Yu Chang
IPC分类号： G03F007/16 , G03F007/20 , G03F007/40
CPC分类号： H01L27/112 , G03F7/0035 , H01L21/0273 , H01L21/0334 , H01L27/1126
摘要： A photolithography process for Mask ROM coding is described. A substrate is provided having a memory array thereon. A first photoresist layer is formed on the substrate with first line/pace patterns, which include trenches having different lengths. A second photoresist layer is formed on the substrate with second line/pace patterns. The second line/space patterns comprise a plurality of linear patterns and linear spaces that are arranged regularly, and have an orientation different from that of the first line/space pattern. Consequently, a plurality of uniform coding windows are defined by the first line/space patterns and the second line/space patterns.
摘要翻译：描述了用于掩模ROM编码的光刻工艺。提供了其上具有存储器阵列的衬底。第一光致抗蚀剂层以第一线/脚步图案形成在衬底上，其包括具有不同长度的沟槽。第二光致抗蚀剂层以第二线/脚步图形形成在衬底上。第二线/空间图形包括多个线性图案和线性空间，其被定期布置，并且具有与第一线/空间图案不同的取向。因此，多个均匀编码窗口由第一行/空间图案和第二行/空格图形定义。

38. 发明申请

US20030235775A1 Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds 审中-公开
标题翻译：用于深紫外光刻的光致抗蚀剂组合物，其包含光活性化合物的混合物
公开(公告)号：US20030235775A1
公开(公告)日：2003-12-25
申请号：US10170761
申请日：2002-06-13
发明人： Munirathna Padmanaban , Takanori Kudo , Sangho Lee , Ralph R. Dammel , M. Dalil Rahman
IPC分类号： G03F007/004 , G03F007/031 , G03F007/20 , G03F007/38
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/115
摘要： The present invention relates to a novel photoresist that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist. The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, 1 where, R1 and R2 are independently (C1-C6)alkyl, cycloalkyl, cyclohexanone, R5-R9 are independently hydrogen, hydroxyl, (C1-C6)alkyl, C1-C6)aliphatic hydrocarbon containing one or more O atoms, mnull1-5, Xnull is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, 2 where, R3 is hydrogen or (C1-C6)alkyl, R4 is independently hydrogen, (C1-C6)alkyl, (C1-C6)aliphatic hydrocarbon containing one or more O atoms, Y is a single bond or (C1-C6)alkyl, and nnull1-4.
摘要翻译：本发明涉及可以用碱性水溶液显影的新型光致抗蚀剂，并且能够在深紫外线的曝光波长下成像。本发明还涉及用于对新型光致抗蚀剂进行成像的方法。新型光致抗蚀剂包括a）含有酸不稳定基团的聚合物，和b）光活性化合物的新混合物，其中该混合物包含选自结构1和2的较低吸收化合物，以及选自结构4和5的较高吸收化合物其中，R 1和R 2独立地是（C 1 -C 6）烷基，环烷基，环己酮，R 5 -R 9独立地是氢，羟基，含有一个或多个O原子的（C 1 -C 6）烷基，C 1 -C 6） 1-5，X 1是阴离子，Ar选自萘基，蒽基和结构3，其中R3是氢或（C1-C6）烷基，R4独立地是氢，（C1-C6）烷基，含有一个或多个O原子的（C 1 -C 6）脂族烃，Y是单键或（C 1 -C 6）烷基，n = 1-4。

39. 发明申请

US20030232283A1 Method for forming a photoresist pattern on a semiconductor substrate 审中-公开
标题翻译：在半导体衬底上形成光致抗蚀剂图案的方法
公开(公告)号：US20030232283A1
公开(公告)日：2003-12-18
申请号：US10177634
申请日：2002-06-18
发明人： Chen-Cheng Yung , Ming-Chuan Wang , Chang-Hao Yang
IPC分类号： G03F007/16 , G03F007/20 , G03F007/38
CPC分类号： G03F7/094 , G03F7/091 , G03F7/16
摘要： A method for forming photoresist layers on a substrate. First, a first photoresist material is coated on the substrate. Next, a second photoresist material is coated on the first photoresist material before the first photoresist material is baked. Thereafter, the substrate is baked at 100null140null C. for 50null80 seconds to simultaneously form a first photoresist layer and a second photoresist layer thereon. The method further includes a step of cooling the first and the second photoresist layers to room temperature after the baking is performed.
摘要翻译：一种在衬底上形成光致抗蚀剂层的方法。首先，将第一光致抗蚀剂材料涂覆在基板上。接下来，在第一光致抗蚀剂材料被烘烤之前，将第二光致抗蚀剂材料涂覆在第一光致抗蚀剂材料上。此后，将基板在100〜140℃下烘烤50〜80秒，同时在其上形成第一光致抗蚀剂层和第二光致抗蚀剂层。该方法还包括在烘烤完成之后将第一和第二光致抗蚀剂层冷却至室温的步骤。

40. 发明申请

US20030232279A1 Negative resist composition comprising base polymer having epoxy ring and Si-containing crosslinker and patterning method for semiconductor device using the same 失效
标题翻译：包含具有环氧环的基础聚合物和含Si的交联剂的负型抗蚀剂组合物和使用其的半导体器件的图案化方法
公开(公告)号：US20030232279A1
公开(公告)日：2003-12-18
申请号：US10395914
申请日：2003-03-24
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Jun Choi
IPC分类号： G03F007/038 , G03F007/20 , G03F007/38 , G03F007/40
CPC分类号： G03F7/0757 , G03F7/038 , G03F7/0385 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.
摘要翻译：提供了使用该组合物的半导体器件的负型抗蚀剂组合物和图案化方法。一方面，负性抗蚀剂组合物包含具有环氧环取代基的碱溶性基础聚合物，具有多个羟基的含硅交联剂和光酸产生剂。在另一方面，图案化方法包括在双层抗蚀剂工艺中使用负性抗蚀剂组合物以形成精细图案。

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