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    • 31. 发明申请
    • 金属パターン及びその製造方法
    • 金属图案及其制造方法
    • WO2005069705A1
    • 2005-07-28
    • PCT/JP2005/000267
    • 2005-01-13
    • 松下電器産業株式会社中川徹
    • 中川徹
    • H05K3/06
    • C25D5/022C23F1/02C23F1/14C23F1/18C23F1/30C23F1/40H01L21/0332H01L21/0337H01L21/32139H01L51/0019H01L51/0022H05K3/061H05K2201/015H05K2201/0239H05K2203/013H05K2203/0582H05K2203/0585H05K2203/122
    •  本発明の金属パターンは、基板の表面に形成され、エッチングされた金属パターン(13')であって、金属パターン(13')の金属膜表面にはフッ化アルキル鎖(CF 3 (CF 2 ) n −:nは自然数)を含む吸着された単分子膜が形成され、前記単分子膜を構成する分子間にメルカプト基(−SH)又はジスルフィド基(−SS−)を有する分子が浸入してマスキング膜(18)が形成されている。こ金属パターンは、フッ化アルキル鎖(CF 3 (CF 2 ) n −:nは自然数)を含む単分子膜を金属膜表面に形成し、前記単分子膜の表面に、メルカプト基(−SH)又はジスルフィド基(−SS−)を有する分子が溶解した溶液を塗布して、前記単分子膜を構成する分子間にメルカプト基(−SH)又はジスルフィド基(−SS−)を有する分子を浸入させてマスキング膜を形成し、エッチング液を前記金属膜表面に曝して前記マスキング膜の無い金属領域をエッチングして得る。
    • 通过在基板表面上形成而蚀刻的金属图案(13'),该金属图案(13')具有通过吸附含有氟化烷基链(CF 3(CF 2)n - n)的单分子膜形成的掩蔽膜(18) (-SH)或二硫代(-SS))的分子渗透到金属膜表面上,并将其分子渗透到构成单分子膜的分子之间的间隙中。 该金属图案通过在金属膜表面上形成含有氟化烷基链(CF 3(CF 2)n - n为自然数)的单分子膜来制造) 用其中溶解有巯基(-SH)或二硫代(-SS-)的分子的溶液涂覆单分子膜的表面,使得具有巯基(-SH)或二硫代(-SS-)的分子渗入第 构成单分子膜的分子,从而形成掩模膜; 并将金属膜表面暴露于蚀刻溶液,从而浪费没有掩蔽膜的金属区域。
    • 34. 发明公开
    • Metallization in semiconductor devices
    • 金属化半导体器件
    • EP0875928A3
    • 1998-12-30
    • EP98104745.9
    • 1998-03-17
    • SIEMENS AKTIENGESELLSCHAFT
    • Tobben, DirkSpuler, BrunoGutsche, MartinWeigand, Peter
    • H01L21/768H01L21/321
    • H05K3/061H01L21/32139H01L21/76838H05K1/0284H05K2201/09018H05K2203/0585
    • A method for forming a plurality of electrically conductive wires on a substrate. The method includes forming a relatively non-planar metal layer over a surface of the substrate. A self-planarizing material is deposited over the metal layer. The self-planarizing material forms a planarization layer over the surface of the metal layer. The planarization layer has a surface relatively planar compared to the relatively non-planar metal layer. A photoresist layer is deposited over the surface of the planarization layer. The photoresist layer is patterned with a plurality of grooves to form a mask with such grooves exposing underling portions of the planarization layer. The photoresist mask is used as a mask to etch grooves in the exposed portions of the planarization layer and thereby form a second mask. The second mask exposes underling portions of the relatively non-planar metal layer. The second mask is used to etch grooves in the relatively non-planar conductive metal layer and thereby form the plurality of electrically conductive wires in the metal layer. The wires are separated from each other by the grooves formed in the relatively non-planar metal layer. The planarization layer is formed by a spinning-on an organic polymer, for example an organic polymer having silicon, or a flowable oxide, or a hydrogensilsequioxane, or divinyl-siloxane-benzocyclobutene. The metal layer is etched using reactive ion etching. The planarization layer is removed using a wet chemical etch.
    • 35. 发明公开
    • Method of forming fine patterns
    • 维尔法赫恩·赫尔斯滕
    • EP0410274A2
    • 1991-01-30
    • EP90113687.9
    • 1990-07-17
    • DAI NIPPON INSATSU KABUSHIKI KAISHA
    • Takeuchi, Satoshi, c/o DAI NIPPON INSATSU K.K.
    • H05K3/06C23F1/02
    • B41M1/00B41M3/00C23F1/02C25D5/022H05K3/0082H05K3/061H05K3/064H05K2203/0117H05K2203/0537H05K2203/0551H05K2203/0585H05K2203/0726H05K2203/135
    • A fine pattern is formed by the following steps. A prescribed mask pattern of an electrically insulative material (3, 5, 8) is formed on an electroconductive surface of a base plate (2) of a printing plate (1), so that the part, other than the mask pattern, of the printing plate becomes an electroconductive printing pattern part . Then, the printing plate (1) is electrolized and the electrodeposition substance (14) is deposited on the electroconductive printing pattern part of the printing plate (1). Then, the deposited substance (14) is transferred onto the surface of a printing object (20) such as a plate of glass or plastic, for forming a pattern thereon. Thereafter, the surface of the printing object (20) is etched with the electrodeposited substance (14) thus transferred as an erosion resistant material.
    • 通过以下步骤形成精细图案。 在印版(1)的基板(2)的导电表面上形成电绝缘材料(3,5,8)的规定的掩模图案,使得除了掩模图案之外的部分 印版成为导电印刷图案部分。 然后,在含有电沉积物质的电解质(11)中进行电解,该电解质(11)作为成分,印刷板作为一个电极(1)和相对的电极(12)都浸没在电解质(11)中,使得 电沉积物质(14)沉积在印版(1)的导电印刷图案部分上。 此后,将印版(1)从电解质(11)中取出,洗涤并干燥。 然后,将沉积物质(14)转印到诸如玻璃或塑料的印刷对象(20)的表面上,以在其上形成图案。 此后,用作为耐腐蚀材料转印的电沉积物质(14)蚀刻印刷对象(20)的表面。 将电沉积物质(14)从印版(1)转印到印刷对象(20)的表面上,随后蚀刻印刷物体表面,能够准确地再现印刷对象上的精细图案 。