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31. 发明申请

US20080066797A1 Selective light absorbing semiconductor surface 有权
标题翻译：选择性光吸收半导体表面
公开(公告)号：US20080066797A1
公开(公告)日：2008-03-20
申请号：US11825558
申请日：2007-07-05
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Zara Taliashvili
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Zara Taliashvili
IPC分类号： H01L35/16
CPC分类号： H01L31/055 , H01L31/02363 , Y02E10/52
摘要： A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished. In a further embodiment of the present invention said grating is formed on the entrance and exit surfaces of one or more layers of a single or multi-junction solar cell. In this embodiment said grating is characterized by indents of depth λ/4 and width >λ, where λ is the wavelength of solar radiation incident on the layer under consideration.
摘要翻译：公开了选择性光吸收半导体表面。所述半导体表面的特征在于存在包括尺寸的光栅的凹陷或突起，以增强所选择的辐射频率的吸收。在本发明的优选实施例中，为了进行光频率下变换，所述光栅形成在掺杂半导体的表面上。半导体被掺杂以便在导电带和价带之间的禁区内产生能级。入射辐射激发电子从价态衰减到禁带的元稳定新创能量的价带到导带。从那里，电子返回价带，伴随着辐射频率低于入射辐射的辐射。因此，光频率下变换被有效且快速地实现。在本发明的另一实施例中，所述光栅形成在单结或多结太阳能电池的一层或多层的入射表面和出射表面上。在该实施例中，所述光栅的特征在于深度为λ/ 4和宽度>λ，其中λ是入射在所考虑的层上的太阳辐射的波长。

32. 发明授权

US07166786B2 Artificial band gap 有权
标题翻译：人造带隙
公开(公告)号：US07166786B2
公开(公告)日：2007-01-23
申请号：US10760697
申请日：2004-01-19
申请人： Avto Tavkhelidze , Jonathan Sidney Edelson , Isaiah Wates Cox , Stuart Harbron
发明人： Avto Tavkhelidze , Jonathan Sidney Edelson , Isaiah Wates Cox , Stuart Harbron
IPC分类号： C03C25/68
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01J1/30 , H01L21/4867 , H01L29/127 , H01L31/0352 , Y10S977/755 , Y10S977/781 , Y10S977/782 , Y10S977/81
摘要： A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.
摘要翻译：公开了一种用于将合适的带隙和电子发射性质诱导到物质中的方法，其中衬底具有对应于电子波干涉的表面结构。使用平版印刷或类似技术，直接用于安装在基板上的金属上，或者用于模具，然后用于印刷金属。在优选实施例中，在金属中形成沟槽或一系列纳米尺寸的沟槽。

33. 发明申请

US20060192196A1 Method of increasing efficiency of thermotunnel devices 失效
标题翻译：提高热电偶装置效率的方法
公开(公告)号：US20060192196A1
公开(公告)日：2006-08-31
申请号：US11289206
申请日：2005-11-28
申请人： Avto Tavkhelidze , Vasiko Svanidze , Magnus Larsson
发明人： Avto Tavkhelidze , Vasiko Svanidze , Magnus Larsson
IPC分类号： H01L29/08
CPC分类号： H01L29/88 , F25B2321/003 , H01L35/00 , Y10S257/93
摘要： The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum or silicon nitride, and placing the insulator between the collector electrode and the emitter electrode.
摘要翻译：本发明包括一种隧穿装置，其中集电极被修改，使得能量较高的电子从发射电极到集电极的隧道效应得到增强。在一个实施例中，集电极与布置在集电极和发射极之间的绝缘体层，优选为铝或氮化硅接触。本发明还包括一种用于增强高能电子从发射电极到集电极的隧穿的方法，所述方法包括使集电极与绝缘体（优选为铝或氮化硅）接触并将绝缘体放置在集电极之间的步骤电极和发射极。

34. 发明授权

US08574663B2 Surface pairs 有权
标题翻译：表面对
公开(公告)号：US08574663B2
公开(公告)日：2013-11-05
申请号：US11667882
申请日：2005-11-17
申请人： Avto Tavkhelidze , Misha Vepkhvadze
发明人： Avto Tavkhelidze , Misha Vepkhvadze
IPC分类号： B05D5/12
CPC分类号： H01J1/30 , H01J9/022 , Y10T428/24917
摘要： The present invention is a method for fabricating an electrode pair precursor which comprises the steps of creating on one surface of a substrate one or more indents of a depth less than approximately 10 nm and a width less than approximately 1 μm; depositing a layer of material on the top of this structured substrate to forming a first electrode precursor; depositing another layer the first electrode precursor to form a second electrode precursor; and finally forming a third layer on top of the second electrode precursor.
摘要翻译：本发明是一种用于制造电极对前体的方法，其包括以下步骤：在衬底的一个表面上形成一个或多个深度小于约10nm和宽度小于约1μm的凹痕; 在该结构化衬底的顶部上沉积一层材料以形成第一电极前体; 沉积另一层第一电极前体以形成第二电极前体; 最后在第二电极前体的顶部形成第三层。

35. 发明授权

US08330192B2 Method for modification of built in potential of diodes 有权
标题翻译：修改二极管内置电位的方法
公开(公告)号：US08330192B2
公开(公告)日：2012-12-11
申请号：US11883011
申请日：2006-01-24
申请人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
发明人： Avto Tavkhelidze , Amiran Bibilashvili , Rodney T. Cox
IPC分类号： H01L29/80
CPC分类号： H01L29/861 , H01L29/872 , H01L31/03529 , H01L33/24 , Y02E10/50
摘要： In broad terms the present invention is a semiconductor junction comprising a first material (102) and a second material (104), in which a surface of one or both of the junction materials has a periodically repeating structure that causes electron wave interference resulting in a change in the way electron energy levels within the junction are distributed.
摘要翻译：在广义上，本发明是包括第一材料（102）和第二材料（104）的半导体结，其中一个或两个接合材料的表面具有周期性重复的结构，其导致电子波干扰，导致改变连接处电子能级的分布方式。

36. 发明申请

US20090072219A1 MOS transistor on the basis of quantum interferance effect 审中-公开
标题翻译： MOS晶体管在量子干涉效应的基础上
公开(公告)号：US20090072219A1
公开(公告)日：2009-03-19
申请号：US12283378
申请日：2008-09-11
申请人： Avto Tavkhelidze
发明人： Avto Tavkhelidze
IPC分类号： H01L29/06
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/125 , H01L29/66439 , H01L29/775 , H01L49/006
摘要： A new type of Metal Oxide Semiconductor (MOS) transistor that works on the basis of the Quantum Interference Depression (QID) effect is disclosed. QID occurs inside an n-type semiconductor source-drain electrode of special geometry. Due to QID the Fermi level of said semiconductor increases locally inside the source drain electrode, thereby creating a localised potential energy barrier in the path of electrons moving from source to drain regions. The height of the barrier depends on the degree of QID. QID is in turn regulated by the gate voltage via the charge depletion and hence change in effective dimensions of the special geometry of the semiconductor electrode. A gate voltage modulated potential energy barrier and is thus formed whereby current in said MOS transistor is controlled.
摘要翻译：公开了基于量子干涉抑制（QID）效应工作的新型金属氧化物半导体（MOS）晶体管。 QID发生在特殊几何形状的n型半导体源极 - 漏极电极内部。由于QID，所述半导体的费米能级在源漏电极内局部增加，从而在从源极到漏极区域移动的电子的路径中产生局部势能势垒。屏障的高度取决于QID的程度。 QID又通过电荷耗尽由栅极电压调节，因此也改变了半导体电极的特殊几何形状的有效尺寸。栅电压调制势垒，由此形成，从而控制所述MOS晶体管中的电流。

37. 发明申请

US20080224124A1 Transistor on the basis of new quantum interference effect 有权
标题翻译：晶体管在新的量子干涉效应的基础上
公开(公告)号：US20080224124A1
公开(公告)日：2008-09-18
申请号：US12075943
申请日：2008-03-13
申请人： Avto Tavkhelidze
发明人： Avto Tavkhelidze
IPC分类号： H01L29/06
CPC分类号： H01L29/66977 , B82Y10/00 , H01L29/1033 , H01L29/1037 , H01L29/4232
摘要： A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion (“island”) and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states.
摘要翻译：一种量子干涉晶体管，包括在金属膜和突起之间具有突起的薄金属膜和薄的绝缘层。由于膜和突起的几何形状引起的量子干涉，在突起下方的区域中形成势垒。施加在电隔离的突起（“岛”）和薄膜之间的电压导致岛的电子波函数的变化，这又导致金属膜在整个区域内的费米能级的变化突出。因此，取决于施加的电压，势垒可能存在或可能不存在，从而为本发明提供了在开态和闭态之间切换的晶体管状特性。

38. 发明申请

US20070108437A1 Method of fabrication of high temperature superconductors based on new mechanism of electron-electron interaction 审中-公开
标题翻译：基于电子 - 电子相互作用的新机制制造高温超导体的方法
公开(公告)号：US20070108437A1
公开(公告)日：2007-05-17
申请号：US11509111
申请日：2006-08-23
申请人： Avto Tavkhelidze
发明人： Avto Tavkhelidze
IPC分类号： H01L39/22 , H01L29/06 , H01L29/08
CPC分类号： H01L39/223
摘要： The present invention is a superconducting tunnel junction comprising two thin films characterized in that the thin films have an indented surface facing each other and are separated by an insulator layer. Typically, the depth of the indents is in the range of 5 to 10 nm, the width of the indents is in the range of 50 to 200 nm, the thickness of the insulator layer is in the range of 1 to 3 nm, and the thickness of the films is less than electron mean free path of a material comprising said films, and is typically in the range of 50 to 100 nm. Preferably the films are single crystal films or amorphous films.
摘要翻译：本发明是一种包括两个薄膜的超导隧道结，其特征在于，薄膜具有彼此面对并由绝缘体层分开的凹陷表面。通常，凹口的深度在5至10nm的范围内，凹口的宽度在50至200nm的范围内，绝缘体层的厚度在1至3nm的范围内，并且膜的厚度小于包含所述膜的材料的电子平均自由程，并且通常在50至100nm的范围内。优选地，膜是单晶膜或非晶膜。

39. 发明申请

US20060249796A1 Influence of surface geometry on metal properties 有权
公开(公告)号：US20060249796A1
公开(公告)日：2006-11-09
申请号：US11484822
申请日：2006-07-10
申请人： Avto Tavkhelidze , Stuart Harbron
发明人： Avto Tavkhelidze , Stuart Harbron
IPC分类号： H01L29/76
CPC分类号： C30B29/02 , C30B33/00 , Y10T29/49117 , Y10T428/12389 , Y10T428/12993
摘要： The influence of surface geometry on metal properties is studied within the limit of the quantum theory of free electrons. It is shown that a metal surface can be modified with patterned indents to increase the Fermi energy level inside the metal, leading to decrease in electron work function. This effect would exist in any quantum system comprising fermions inside a potential energy box. Also disclosed is a method for making nanostructured surfaces having perpendicular features with sharp edges.

40. 发明申请

US20060038290A1 Process for making electrode pairs 失效
标题翻译：制作电极对的工艺
公开(公告)号：US20060038290A1
公开(公告)日：2006-02-23
申请号：US11254495
申请日：2005-10-20
申请人： Avto Tavkhelidze , Stuart Harbron
发明人： Avto Tavkhelidze , Stuart Harbron
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： H01J9/02 , Y10T29/413 , Y10T29/49128 , Y10T29/49147 , Y10T29/49156
摘要： The present invention is a process for making a matching pair of surfaces, which involves creating a network of channels on one surface of two substrate. The substrates are then coated with one or more layers of materials, the coating extending over the regions between the channels and also partially into the channels. The two coated surfaces are then contacted and pressure is applied, which causes the coatings to be pressed into the network of channels, and surface features on one of the layers of material creates matching surface features in the other, and vice versa. It also results in the formation of a composite. In a final step, the composite is separated, forming a matching pair of surfaces.
摘要翻译：本发明是一种用于制作匹配的一对表面的方法，其涉及在两个基板的一个表面上产生通道网络。然后用一层或多层材料涂覆基材，涂层在通道之间的区域上延伸并且还部分地进入通道。然后将两个涂覆的表面接触并施加压力，这导致涂层被压入通道网络中，并且一层材料上的表面特征在另一层上产生匹配的表面特征，反之亦然。它还导致复合材料的形成。在最后一步中，复合物被分离，形成一对匹配的表面。

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