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31. 发明授权

US07513262B2 Substrate meniscus interface and methods for operation 失效
标题翻译：底物半月板接口和操作方法
公开(公告)号：US07513262B2
公开(公告)日：2009-04-07
申请号：US10817620
申请日：2004-04-01
申请人： Carl Woods
发明人： Carl Woods
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： An apparatus for processing a substrate with a fluid meniscus to be applied to a surface of the substrate is provided which includes a docking surface configured to be placed adjacent to an edge of the substrate where the docking surface is in the same plane as the substrate. The docking surface provides a transition interface to allow the fluid meniscus to enter and exit the surface of the substrate.
摘要翻译：提供一种用于处理具有要施加到基板的表面的流体弯月面的基板的装置，其包括配置成邻近基板的边缘放置的对接表面，其中对接表面位于与基板相同的平面中。对接表面提供过渡界面以允许流体弯液面进入和离开衬底的表面。

32. 发明授权

US07387689B2 Methods for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 失效
标题翻译：使用保持在晶片表面附近的多个入口和出口干燥半导体晶片表面的方法
公开(公告)号：US07387689B2
公开(公告)日：2008-06-17
申请号：US11750960
申请日：2007-05-18
申请人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia
发明人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia
IPC分类号： B08B3/00 , F26B5/04
CPC分类号： H01L21/67051 , B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.
摘要翻译：提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了受控半月板所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

33. 发明授权

US07293571B2 Substrate proximity processing housing and insert for generating a fluid meniscus 有权
标题翻译：基板接近处理壳体和用于产生流体弯液面的插入件
公开(公告)号：US07293571B2
公开(公告)日：2007-11-13
申请号：US10817355
申请日：2004-04-01
申请人： Carl Woods , Michael G. R. Smith , John Parks
发明人： Carl Woods , Michael G. R. Smith , John Parks
IPC分类号： B08B3/00
CPC分类号： B08B3/02 , C25D5/08 , C25D17/00 , C25D17/001 , C25D21/00 , H01L21/02057 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , Y10S134/902
摘要： An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.
摘要翻译：提供了一种用于产生要形成在基板的表面上的流体弯液面的装置，其包括壳体，其中壳体包括靠近基板的基板表面放置的壳体表面。壳体还包括由壳体表面包围的过程配置接收区域。该设备还包括具有插入表面的过程配置插入件，其中该过程配置插入件被限定为适合于壳体的过程配置接收区域内，使得插入表面和壳体表面限定可以靠近衬底的衬底表面。

34. 发明申请

US20070218653A1 METHODS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 失效
标题翻译：使用大量入口和出口将半导体波形表面干燥的方法保持在接近于波长表面的距离
公开(公告)号：US20070218653A1
公开(公告)日：2007-09-20
申请号：US11750960
申请日：2007-05-18
申请人： John de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James Garcia
发明人： John de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James Garcia
IPC分类号： H01L21/02
CPC分类号： H01L21/67051 , B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from conduits in the head when the head is in close proximity to the surface of the substrate and removing the first fluid from the surface of the substrate. The removing is processed just as first fluid is applied to the surface of the substrate, and the removing ensures that the applied first fluid is contained between a surface of the head and the surface of the substrate and the first fluid being applied and removed defines a controlled meniscus. The method further includes moving the controlled meniscus over different regions of the surface of the substrate when movement of the head or the substrate is dictated. The moving of the controlled meniscus enables processing of part or all of the surface of the substrate using the first fluid.
摘要翻译：提供了通过头部处理基板的方法，该头被配置为与基板的表面紧密非接触地放置。一种方法包括当头部紧邻衬底的表面并从衬底的表面去除第一流体时，将第一流体施加到衬底表面上的管道中。当第一流体被施加到基板的表面上时，移除被处理，并且移除确保所施加的第一流体被包含在头部的表面和基底的表面之间，并且被施加和移除的第一流体限定了受控半月板所述方法还包括当限制头部或基底的运动时，将受控弯液面移动到衬底的表面的不同区域上。受控弯液面的移动使得能够使用第一流体处理基板的部分或全部表面。

35. 发明授权

US07240679B2 System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold 有权
标题翻译：用于基底处理的系统，具有弯液面，真空，IPA蒸气，干燥歧管
公开(公告)号：US07240679B2
公开(公告)日：2007-07-10
申请号：US10330897
申请日：2002-12-24
申请人： Carl Woods , John de Larios
发明人： Carl Woods , John de Larios
IPC分类号： B08B3/00 , F26B5/12
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： One of many embodiments of a substrate preparation system is provided which includes a drying system, the drying system including at least one proximity head for drying a substrate. The system also includes a cleaning system for cleaning the substrate.
摘要翻译：提供了一种衬底制备系统的许多实施方案之一，其包括干燥系统，所述干燥系统包括用于干燥衬底的至少一个邻近头。该系统还包括用于清洁基底的清洁系统。

36. 发明授权

US07198055B2 Meniscus, vacuum, IPA vapor, drying manifold 有权
公开(公告)号：US07198055B2
公开(公告)日：2007-04-03
申请号：US10330843
申请日：2002-12-24
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

37. 发明申请

US20060207636A1 Multi-menisci processing apparatus 失效
标题翻译：多功能加工设备
公开(公告)号：US20060207636A1
公开(公告)日：2006-09-21
申请号：US11437891
申请日：2006-05-18
申请人： James Garcia , Mike Ravkin , Carl Woods , Fred Redeker , John de Larios
发明人： James Garcia , Mike Ravkin , Carl Woods , Fred Redeker , John de Larios
IPC分类号： B08B3/00 , B08B3/12
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process window. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.
摘要翻译：提供了基板制备装置。该装置包括构造成安装在基板制造设备中的壳体。壳体包括用于制备晶片表面的歧管。歧管被配置为在歧管的第一部分中包括第一过程窗口。第一流体弯液面能够在第一过程窗口内被定义。还包括在歧管的第二部分中的第二处理窗口。能够在第二过程窗口内限定第二流体弯月面。臂与壳体一体化，并且臂联接到歧管，使得臂在操作期间能够将歧管定位在基板附近。因此，该装置提供了使用单个歧管在基板的表面上形成多重半月板。

38. 发明申请

US20060081270A1 Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus 失效
标题翻译：使用动态液体弯月面处理衬底的斜边缘的方法和系统
公开(公告)号：US20060081270A1
公开(公告)日：2006-04-20
申请号：US11292490
申请日：2005-12-01
申请人： Carl Woods , James Garcia , John de Larios
发明人： Carl Woods , James Garcia , John de Larios
IPC分类号： C23G1/00 , B08B3/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A system and method for processing an edge of a substrate includes an edge roller and a first proximity head. The first proximity head being mounted on the edge roller. The first proximity head capable of forming a meniscus and including a concave portion and multiple ports opening into the concave portion. The concave portion being capable of receiving an edge of a substrate and the ports including at least one process liquid injection port, at least one vacuum port and at least one surface tension control port.
摘要翻译：用于处理衬底的边缘的系统和方法包括边缘辊和第一邻近头。第一接近头安装在边缘辊上。第一接近头部能够形成弯液面并且包括凹入部分和通向凹部的多个端口。所述凹部能够容纳衬底的边缘，并且所述端口包括至少一个处理液体注入端口，至少一个真空端口和至少一个表面张力控制端口。

39. 发明授权

US07722724B2 Methods for substrate processing in cluster tool configurations having meniscus application systems 有权
标题翻译：具有弯液面应用系统的簇工具配置中的衬底处理方法
公开(公告)号：US07722724B2
公开(公告)日：2010-05-25
申请号：US11809618
申请日：2007-05-31
申请人： Carl Woods , John de Larios
发明人： Carl Woods , John de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： Method for processing a substrate are provided. The processing occurs when the substrate is moved between cluster tools. One method includes providing the substrate to a cluster tool, and the cluster tool is configured to move the substrate into a meniscus processing module having at least one proximity head. The proximity head is configured to perform operations including applying a fluid onto a region of a surface of the substrate, such the fluid is continuously flown so as to substantially fill the region between a surface of the proximity head and the surface of the substrate. An operation of removing the fluid from the region by applying a vacuum force through the proximity head is also provided. The applying and removing is operated substantially simultaneously so that the fluid forms a controlled fluid meniscus that remains between the surface of the substrate and the surface of the proximity head when the proximity head is positioned over the substrate. The method can include moving one of the controlled fluid meniscus or the substrate so that the controlled fluid meniscus is caused to contact regions of the surface of the substrate to cause fluid processing of the surface of the substrate when in the meniscus processing module. The method can also include moving the substrate out of the meniscus processing module and into a next module of the of the cluster tool or out of the cluster tool.
摘要翻译：提供了处理基板的方法。当基板在集群工具之间移动时发生处理。一种方法包括将基板提供给集群工具，并且集群工具被配置为将衬底移动到具有至少一个邻近头部的弯液面处理模块中。邻近头部被配置为执行包括将流体施加到基底表面的区域上的操作，使得流体连续流动，以便基本上填充邻近头部的表面和基底表面之间的区域。还提供了通过施加真空力通过邻近头部从该区域去除流体的操作。施加和移除基本同时操作，使得当邻近头位于衬底上方时，流体形成保持在衬底的表面和邻近头部的表面之间的受控流体弯液面。该方法可以包括移动受控流体弯月面或基底之一，使得受控流体弯液面在基板的表面接触时，在弯月面处理模块中引起基底表面的流体处理。该方法还可以包括将基板移出弯液面处理模块并进入集群工具的下一个模块或者从集群工具中移出。

40. 发明申请

US20090260992A1 Wafer Support Apparatus for Electroplating Process and Method for Using the Same 有权
标题翻译：用于电镀工艺的晶片支撑装置及其使用方法
公开(公告)号：US20090260992A1
公开(公告)日：2009-10-22
申请号：US12490239
申请日：2009-06-23
申请人： Carl Woods
发明人： Carl Woods
IPC分类号： C25D5/02 , C25D5/00
CPC分类号： C25D17/06 , C25D5/02 , C25D17/00 , C25D17/001
摘要： A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (“wafer”). The multi-layered wafer support apparatus includes a bottom film layer and a top film layer. The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electrical circuits that are each defined to electrically contact a peripheral top surface of the wafer at diametrically opposed locations about the wafer.
摘要翻译：提供一种用于对半导体晶片（“晶片”）进行电镀处理的多层晶片支撑装置。多层晶片支撑装置包括底部薄膜层和顶部薄膜层。底部薄膜层包括晶片放置区域和围绕晶片放置区域的牺牲阳极。顶部薄膜层被定义为放置在底部薄膜层上。顶部薄膜层包括位于要处理的晶片的表面上的开放区域，即电镀。顶部膜层围绕开放区域的周边在顶部膜层和晶片之间提供液体密封。顶部薄膜层还包括第一和第二电路，每个电路限定为在晶片周围的直径相对的位置处电接触晶片的外围顶表面。

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