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31. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

32. 发明授权

US06190937B1 Method of producing semiconductor member and method of producing solar cell 失效
标题翻译：制造半导体元件的方法和太阳能电池的制造方法
公开(公告)号：US06190937B1
公开(公告)日：2001-02-20
申请号：US08999132
申请日：1997-12-29
申请人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Katsumi Nakagawa , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C30B19/12 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02625 , H01L21/02628 , H01L21/02664 , H01L21/2007 , H01L21/3063 , H01L21/76251 , H01L29/66772 , H01L29/78654 , H01L31/068 , H01L31/0687 , H01L31/1804 , H01L33/0062 , H01L2221/68368 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： To accomplish both higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.
摘要翻译：为了在半导体元件中实现更高的晶体性能和更低的成本，并且以低成本生产具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件：（a）形成多孔（b）将多孔层浸渍在其中溶解有用于形成要生长的半导体层的元素的熔融溶液中，在高温还原气氛下，将晶体半导体层生长在多孔层的表面，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

33. 发明授权

US6156624A Method for production of SOI substrate by pasting and SOI substrate 失效
标题翻译：通过粘贴和SOI衬底生产SOI衬底的方法
公开(公告)号：US6156624A
公开(公告)日：2000-12-05
申请号：US832859
申请日：1997-04-04
申请人： Kenji Yamagata , Takao Yonehara , Tadashi Atoji , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Tadashi Atoji , Kiyofumi Sakaguchi
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/786 , H01L21/306
CPC分类号： H01L21/2007 , H01L21/76251 , Y10S438/977
摘要： This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO.sub.2 surface and a second substrate possessing a Si surface on the SiO.sub.2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.
摘要翻译：本发明解决了在其周边部分产生空隙的粘贴SOI衬底的问题，从而减少了从其导出的器件的数量。本发明涉及制备通过在SiO 2表面和Si表面上粘贴具有SiO 2表面的第一Si衬底和具有Si表面的第二衬底而获得的SOI衬底的方法，该方法包括：将第二Si的Si表面从而在将第一Si衬底和第二Si衬底粘贴在一起之前对Si表面赋予疏水性。

34. 发明授权

US06103598A Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06103598A
公开(公告)日：2000-08-15
申请号：US678694
申请日：1996-07-11
申请人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/76243
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
摘要翻译：提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

35. 发明授权

US5856229A Process for production of semiconductor substrate 失效
公开(公告)号：US5856229A
公开(公告)日：1999-01-05
申请号：US863717
申请日：1997-05-27
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L21/762 , H01L21/02 , H01L21/20 , H01L23/12 , H01L23/15 , H01L27/12 , H01L21/76
CPC分类号： H01L21/76245 , H01L21/76259 , Y10S438/96 , Y10S438/977
摘要： A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

36. 发明授权

US5755914A Method for bonding semiconductor substrates 失效
标题翻译：半导体衬底接合方法
公开(公告)号：US5755914A
公开(公告)日：1998-05-26
申请号：US675844
申请日：1996-07-05
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/02 , H01L21/20 , H01L27/12
CPC分类号： H01L21/2007 , H01L2224/83894 , Y10S148/012 , Y10S148/135
摘要： A semiconductor substrate comprises a plurality of substrates to be bonded, wherein a bond promotion layer into which silicon atoms are implanted is provided in an interface between the substrates to be bonded, and the substrates are bonded to each other with the interposition of the bond promotion layer.
摘要翻译：半导体衬底包括多个待接合的衬底，其中在待结合的衬底之间的界面中提供注入有硅原子的键促进层，并且通过插入键促进来将衬底彼此接合层。\！

37. 发明授权

US5530266A Liquid crystal image display unit and method for fabricating semiconductor optical member 失效
标题翻译：液晶图像显示单元及制造半导体光学元件的方法
公开(公告)号：US5530266A
公开(公告)日：1996-06-25
申请号：US242047
申请日：1994-05-13
申请人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
发明人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
IPC分类号： G02F1/1362 , H01L27/12 , H01L27/092 , H01L27/105
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , H01L27/1233 , G02F2001/136281 , G02F2202/105 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.
摘要翻译：在对可见光区域的光不透明的基板上形成的液晶图像显示单元，其特征在于，除去所述基板上的液晶像素部下方的部分，使得所述光透过所述液晶像素部分。

38. 发明授权

US5463975A Process for producing crystal 失效
标题翻译：水晶生产工艺
公开(公告)号：US5463975A
公开(公告)日：1995-11-07
申请号：US90626
申请日：1993-07-12
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： C30B25/00 , C30B23/02 , C30B25/02 , C30B25/10 , C30B25/18 , C30B33/00 , C30B33/02 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/84 , H01L27/12 , C30B1/08
CPC分类号： C30B25/18 , C30B23/02 , C30B25/02 , C30B25/105 , H01L21/0237 , H01L21/02532 , H01L21/02639 , H01L21/02647
摘要： A process for producing a crystal comprises the step of applying crystal forming treatment on a light-transmissive substrate having a non-nucleation surface (S.sub.NDS) of a small nucleation density and a nucleation surface (S.sub.NDL) of a nucleation density (ND.sub.L) greater than the nucleation density (N.sub.DS) of said non-nucleation surface (S.sub.NDS) and formed of an amorphous material (M.sub.L) different from the material (M.sub.S) forming the non-nucleation surface (S.sub.NDS) at a small area sufficient to effect crystal growth from only a single nucleus to form a single crystal nucleus on the nucleation surface (S.sub.NDL), thereby growing a single crystal from the single nucleus, and the step of reducing the crystal defects of the crystal in the vicinity of the interface with the substrate by irradiation of light from the side of the substrate.
摘要翻译：制造晶体的方法包括以下步骤：对具有小成核密度的非成核面（SNDS）和成核密度（NDL）的成核面（SNDL）的透光性基板进行结晶化处理，所述非成核表面（SNDS）的成核密度（NDS）由不同于形成非成核表面（SNDS）的材料（MS）的非晶材料（ML）形成，并且在不足以实现晶体生长的小面积上形成仅在核成核面（SNDL）上形成单晶核，由此从单个核生长单晶，以及通过照射降低与基板界面附近的晶体的晶体缺陷的步骤的光从基板的一侧。

39. 发明授权

US5458755A Anodization apparatus with supporting device for substrate to be treated 失效
标题翻译：具有待处理基板的支撑装置的阳极氧化装置
公开(公告)号：US5458755A
公开(公告)日：1995-10-17
申请号：US148341
申请日：1993-11-08
申请人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
发明人： Yasutomo Fujiyama , Mitsuhiro Ishii , Senju Kanbe , Takao Yonehara , Toru Takisawa , Akira Okita , Kiyofumi Sakaguchi , Takanori Watanabe , Kazuo Kokumai
IPC分类号： C25D5/02 , C25D17/08 , C25D17/06 , C25D21/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/004 , C25D17/06 , C25D5/022
摘要： An anodization apparatus for anodizing the surface of a semiconductor substrate by supporting the semiconductor substrate between a pair of electrodes in an electrolytic solution and applying a voltage across the pair of electrodes. The anodization apparatus includes an elastic sealing member for supporting a peripheral portion of the semiconductor substrate such that a surface portion of a semiconductor substrate remains exposed, a support jig which includes a tapered hollow portion for supporting the sealing member, and a device for introducing a fluid of gas or liquid into the tapered hollow portion. When the fluid is introduced, the sealing member is pressed against and brought into hermetic contact with the tapered hollow portion and with the entire peripheral portion of the semiconductor substrate such that the electrolytic solution is separated into electrically isolated parts by coordination between the semiconductor substrate, the sealing member, and the support jig. Anodization of the semiconductor substrate may then be carried out, such as by producing a porous silicon layer on the surface of the semiconductor substrate.
摘要翻译：一种阳极氧化装置，用于通过将半导体衬底支撑在电解液中的一对电极之间并在一对电极之间施加电压来阳极氧化半导体衬底的表面。阳极氧化装置包括用于支撑半导体衬底的周边部分使得半导体衬底的表面部分保持露出的弹性密封构件，包括用于支撑密封构件的锥形中空部分的支撑夹具，以及用于引入气体或液体的流体进入锥形中空部分。当引入流体时，密封构件被挤压并与锥形中空部分和半导体衬底的整个周边部分气密接触，使得电解溶液通过半导体衬底之间的配合被分离成电隔离部分，密封构件和支撑夹具。然后可以进行半导体衬底的阳极氧化，例如通过在半导体衬底的表面上产生多孔硅层。

40. 发明授权

US5439843A Method for preparing a semiconductor substrate using porous silicon 失效
标题翻译：使用多孔硅制备半导体衬底的方法
公开(公告)号：US5439843A
公开(公告)日：1995-08-08
申请号：US301263
申请日：1994-09-06
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Mamoru Miyawaki
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Mamoru Miyawaki
IPC分类号： H01L21/20 , H01L21/306 , H01L21/762 , H01L31/18
CPC分类号： H01L31/1892 , H01L21/02381 , H01L21/0245 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01L21/30604 , H01L21/76251 , H01L21/76256 , Y02E10/50 , Y10S438/96
摘要： A semiconductor substrate comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.
摘要翻译：半导体衬底包括绝缘层和形成在所述绝缘层上的化合物半导体单晶薄膜，所述绝缘层的热膨胀系数在所述单晶薄膜的热膨胀系数的60％-140％的范围内。

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