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31. 发明授权

US06677244B2 Specimen surface processing method 有权
标题翻译：试样表面处理方法
公开(公告)号：US06677244B2
公开(公告)日：2004-01-13
申请号：US10135516
申请日：2002-05-01
申请人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
发明人： Tetsuo Ono , Yasuhiro Nishimori , Takashi Sato , Naoyuki Kofuji , Masaru Izawa , Yasushi Goto , Ken Yoshioka , Hideyuki Kazumi , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takafumi Tokunaga , Motohiko Yoshigai
IPC分类号： H01L21302
CPC分类号： H01J37/32082 , H01L21/32136
摘要： A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.
摘要翻译：用于蚀刻具有栅极氧化膜的样品的等离子体处理方法包括使用电磁波在真空室中产生等离子体，向样品施加rf偏置功率，在样品的充电电压达到击穿之前关闭rf偏置功率电压，在样品的充电电压基本上下降之后接通rf偏置功率，并且重复接通和关断rf偏置功率以处理样品。关闭时间至少比准时更长。

32. 发明授权

US08427177B2 Capacitance sensor 有权
标题翻译：电容传感器
公开(公告)号：US08427177B2
公开(公告)日：2013-04-23
申请号：US12912580
申请日：2010-10-26
申请人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
发明人： Heewon Jeong , Kiyoko Yamanaka , Yasushi Goto , Toshiaki Nakamura , Masahide Hayashi
IPC分类号： G01R27/26 , G01R27/08
CPC分类号： G01P21/00 , G01C19/5719 , G01P15/125 , G01P2015/0814
摘要： A technique in which a false detection and a wrong diagnosis can be suppressed in a capacitance sensor represented by an acceleration sensor is provided. A first capacitative element and a second capacitative element, which configure a capacitance detection unit, and a third capacitative element and a fourth capacitative element, which configure a forced oscillation generation unit, are electrically separated from each other. That is, the diagnosis movable electrode that configures the third capacitative element and the fourth capacitative element is formed integrally with the movable part. On the other hand, the diagnosis fixed electrode and the diagnosis fixed electrode are electrically separated from the detection fixed electrode and the detection fixed electrode.
摘要翻译：提供了一种在由加速度传感器表示的电容传感器中可以抑制错误检测和错误诊断的技术。构成电容检测单元的第一电容元件和第二电容元件以及配置强制振荡产生单元的第三电容元件和第四电容元件彼此电分离。也就是说，构成第三电容元件和第四电容元件的诊断可移动电极与可动部一体地形成。另一方面，诊断固定电极和诊断固定电极与检测固定电极和检测固定电极电分离。

33. 发明申请

US20130020880A1 Energy Storage Circuit 审中-公开
标题翻译：储能电路
公开(公告)号：US20130020880A1
公开(公告)日：2013-01-24
申请号：US13541827
申请日：2012-07-05
申请人： Kengo ASAI , Atsushi Isobe , Kenichi Osada , Yasushi Goto , Hideaki Takano
发明人： Kengo ASAI , Atsushi Isobe , Kenichi Osada , Yasushi Goto , Hideaki Takano
IPC分类号： H02M3/06
CPC分类号： H02J7/34 , H01G5/38 , H01G5/40 , H01H59/0009
摘要： An energy storage circuit includes a first capacitor connected with a power generating element via a first diode and a second capacitor connected with the power generating element via a second diode and a switch. The conduction state of the switch is controlled using the potential difference between its second and third electrodes (driving voltage V). The driving voltage when the switch enters its conductive state is higher than the driving voltage when the switch enters its non-conductive state.
摘要翻译：能量存储电路包括经由第一二极管与发电元件连接的第一电容器和经由第二二极管和开关与发电元件连接的第二电容器。使用其第二和第三电极之间的电位差（驱动电压V）来控制开关的导通状态。当开关进入其导通状态时的驱动电压高于开关进入非导通状态时的驱动电压。

34. 发明授权

US08044703B2 Diversity signal processing system and a producing method thereof 有权
标题翻译：分集信号处理系统及其制作方法
公开(公告)号：US08044703B2
公开(公告)日：2011-10-25
申请号：US12109091
申请日：2008-04-24
申请人： Hiroaki Kenjyo , Tadashi Miyazaki , Yasushi Goto , Naotaka Oda , Toshifumi Sato
发明人： Hiroaki Kenjyo , Tadashi Miyazaki , Yasushi Goto , Naotaka Oda , Toshifumi Sato
IPC分类号： G06F11/16
CPC分类号： G06F11/183
摘要： Each of APRM units equipped for each of the diversity channels has printed circuit boards having circuit patterns thereon and a circuit description elements installed on the printed circuit board. The circuit description elements are FPGA elements manufactured by mutually different providers for example and implemented an electric circuit described in a hardware description language by a configuration tool. The circuit description elements can be implemented mutually different descriptions of the electric circuit, or can be implemented the electric circuit by mutually different configuration tools. Also, the printed circuit boards for the diversity channels can be different from each other.
摘要翻译：为每个分集通道配备的每个APRM单元具有其上具有电路图案的印刷电路板和安装在印刷电路板上的电路描述元件。电路描述元件是由相互不同的提供商制造的FPGA元件，并且通过配置工具实现了以硬件描述语言描述的电路。电路描述元件可以实现相互不同的电路描述，或者可以通过相互不同的配置工具来实现电路。此外，用于分集通道的印刷电路板可以彼此不同。

35. 发明申请

US20100091270A1 Optical property measurement apparatus 有权
标题翻译：光学性能测量仪器
公开(公告)号：US20100091270A1
公开(公告)日：2010-04-15
申请号：US12587518
申请日：2009-10-07
申请人： Takeshi Matsumoto , Shiniji Yamamoto , Kenji Imura , Kazuya Kiyoi , Yoshiyuki Nagashima , Yasushi Goto
发明人： Takeshi Matsumoto , Shiniji Yamamoto , Kenji Imura , Kazuya Kiyoi , Yoshiyuki Nagashima , Yasushi Goto
IPC分类号： G01J1/42
CPC分类号： G01J3/02 , G01J3/0291 , G01J3/506
摘要： An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured.
摘要翻译：光学特性测量装置包括：主体，其包括面对显示部分的平面形状表面; 接收从通过所述平面形状表面形成的开口指向的光的光学传感器; 以及支撑部，其设置在所述平面形状表面的一侧，并且在所述显示部和所述平面形状表面之间保持恒定的距离; 其特征在于，在测量所述光学特性时，所述遮光部被设置成包围所述平面形状面的开口的周向区域，并遮蔽来自所述显示部的测量对象区域以外的区域的光的入射。

36. 发明授权

US07451656B2 Semiconductor device embedded with pressure sensor and manufacturing method thereof 有权
标题翻译：嵌入压力传感器的半导体器件及其制造方法
公开(公告)号：US07451656B2
公开(公告)日：2008-11-18
申请号：US11878243
申请日：2007-07-23
申请人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
发明人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
IPC分类号： G01L9/00 , G01L9/16
CPC分类号： G01L9/0073
摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.
摘要翻译：提供了一种用于促进嵌入压力传感器的半导体器件的尺寸减小，性能改进和可靠性改进的方法。在嵌入压力传感器的半导体装置中，最上部布线的一部分用作压力检测单元的下部电极。形成在下电极上的氧化硅膜的一部分是空腔。在氧化硅膜上形成的硅化钨膜上形成氮化硅膜。氮化硅膜具有填充孔或孔的功能，并且抑制水分从外部浸入到嵌入压力传感器的半导体器件中。氮化硅膜和硅化钨膜的叠层膜形成压力传感器的膜片。

37. 发明申请

US20070262401A1 Semiconductor device embedded with pressure sensor and manufacturing method thereof 有权
公开(公告)号：US20070262401A1
公开(公告)日：2007-11-15
申请号：US11878243
申请日：2007-07-23
申请人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
发明人： Natsuki Yokoyama , Shuntaro Machida , Yasushi Goto
IPC分类号： H01L29/84
CPC分类号： G01L9/0073
摘要： The method for promoting the size reduction, the performance improvement and the reliability improvement of a semiconductor device embedded with pressure sensor is provided. In a semiconductor device embedded with pressure sensor, a part of an uppermost wiring is used as a lower electrode of a pressure detecting unit. A part of a silicon oxide film formed on the lower electrode is a cavity. On a tungsten silicide film formed on the silicon oxide film, a silicon nitride film is formed. The silicon nitride film has a function to fill a hole or holes and suppress immersion of moisture from outside to the semiconductor device embedded with pressure sensor. A laminated film of the silicon nitride film and the tungsten silicide film forms a diaphragm of the pressure sensor.

38. 发明授权

US07259104B2 Sample surface processing method 失效
标题翻译：样品表面处理方法
公开(公告)号：US07259104B2
公开(公告)日：2007-08-21
申请号：US10671608
申请日：2003-09-29
申请人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
发明人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01J37/32082 , H01L21/32136 , H01L21/32139
摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
摘要翻译：具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤：在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压，以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

39. 发明申请

US20070102831A1 Device and method of manufacturing the same 审中-公开
标题翻译：装置及其制造方法
公开(公告)号：US20070102831A1
公开(公告)日：2007-05-10
申请号：US10583862
申请日：2003-12-24
申请人： Shuntaro Machida , Natsuki Yokoyama , Yasushi Goto
发明人： Shuntaro Machida , Natsuki Yokoyama , Yasushi Goto
IPC分类号： H01L21/66 , H01L23/28
CPC分类号： H01L21/78 , H01L2224/48091 , H01L2924/10253 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： The present invention has a object to enhance the yield and facilitate bonding in a device provided with micro-mechanical elements formed by a MEMS technique. According to the inveniton, when a first wafer having a plurality of areas in which micro-mechanical elements and pads are formed and a second wafer in which an aperture is formed are to be glued together, the aperture is shared by the pads in the plurality of areas. This makes it possible for individual chips, into which the wafer is cut out, to be bonded with a conventionally used wire bonder because a sufficient aperture is provided above the pads. Further according to the invention, at the step of dicing two glued wafers into individual chips, the two wafers are separately cut. This enables chipping of the wafers to be reduced and the yield at the dicing step to be enhanced.
摘要翻译：本发明的目的是提高在通过MEMS技术形成的微机械元件的装置中的产量和促进结合。根据本发明，当具有其中形成有微机械元件和焊盘的多个区域的第一晶片和其中形成有孔的第二晶片将被胶合在一起时，该孔由多个焊盘共享的地区。这使得可以用常规使用的引线接合器将切割出晶片的各个芯片结合，因为在焊盘上方设置足够的孔。此外，根据本发明，在将两个胶合晶片切割成单个芯片的步骤中，两个晶片被分开切割。这样可以削减晶片的碎裂并提高切割步骤的成品率。

40. 发明申请

US20070018761A1 Switch, semiconductor device, and manufacturing method thereof 失效
标题翻译：开关，半导体器件及其制造方法
公开(公告)号：US20070018761A1
公开(公告)日：2007-01-25
申请号：US11472355
申请日：2006-06-22
申请人： Kiyoko Yamanaka , Yasushi Goto
发明人： Kiyoko Yamanaka , Yasushi Goto
IPC分类号： H01H51/22
CPC分类号： H01H1/0036 , B81B2207/07 , B81C1/00246 , B81C2203/0136 , B81C2203/0735 , H01H59/0009
摘要： It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.
摘要翻译：实现可以安装有CMOS电路并具有机械和电气的高可靠性的接触点的MEMS开关的目的。在构成MEMS开关的悬臂梁和与其相对的固定触头2的接触表面处形成具有与CMOS工艺兼容的绝缘体。当使用开关时，通过向拉入电极和悬臂梁施加电压来移动悬臂梁。在悬臂梁与固定触点接触之后，超过绝缘体击穿场强的电压被施加到绝缘体上，导致电介质击穿。通过改变绝缘体一次，保护开关接触点的机械疲劳浓度点，并且实现接触点，其中电信号通过由电介质击穿形成的电流路径传输。

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