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31. 发明申请

US20140228612A1 PROCESS AND DEVICE FOR REDUCING RADIOACTIVE MATERIAL OF OBJECT CONTAINING RADIOACTIVE MATERIAL TO SAFE LEVEL IN LIVING ENVIRONMENT 有权
标题翻译：将放射性物质放射性物质放射生物用于生活环境安全水平的方法和装置
公开(公告)号：US20140228612A1
公开(公告)日：2014-08-14
申请号：US14236884
申请日：2012-08-03
申请人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
发明人： Shigeto Hayafuji , Takeshi Kamaya , Hiroshi Hayakawa , Yasuhiro Jinbo , Kaname Mogami , Kenji Takeshita , Masanori Aritomi , Kunio Yoshikawa , Saburo Kikuchi , Akio Ishido
IPC分类号： G21F9/30 , F16K5/06
CPC分类号： F16K5/06 , G21F9/28 , G21F9/30
摘要： Provided are a process and device for reducing radioactive material of an object containing the radioactive material to a safe level in a living environment.Included are a step of performing at least a step of carrying out a heating process on the object, into which radioactive material is absorbed and/or adsorbed from an environment or which absorbs and/or adsorbs radioactive material from an environment, in a state where temperature is less than or equal to the critical temperature of water and pressure is greater than or equal to the saturated vapor pressure of water, or a step of abruptly releasing the pressure; and a step of separating, after the above step, into liquid and solid.
摘要翻译：提供了一种用于将包含放射性物质的物体的放射性物质还原到生活环境中的安全水平的方法和装置。包括对在物体上进行放热物质的吸收和/或从环境中吸收和/或从环境中吸收和/或吸附放射性物质或从环境中吸收和/或吸附放射性物质的步骤的至少一个步骤，温度小于或等于水的临界温度，压力大于或等于水的饱和蒸汽压，或突然释放压力的步骤; 以及在上述步骤之后分离成液体和固体的步骤。

32. 发明授权

US08426295B2 Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device 有权
标题翻译：微晶硅膜的制造方法和半导体器件的制造方法
公开(公告)号：US08426295B2
公开(公告)日：2013-04-23
申请号：US13267257
申请日：2011-10-06
申请人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
发明人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi , Yoshitaka Yamamoto
IPC分类号： H01L21/336
CPC分类号： H01L29/78696 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/28008 , H01L29/04 , H01L29/6675
摘要： To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.
摘要翻译：提供具有高结晶度和高膜密度的微晶硅膜的制造方法。在本发明的微晶硅膜的制造方法中，在第一条件下，在绝缘膜上形成包含混晶相的第一微晶硅膜，在第二条件下形成第二微晶硅膜。第一条件和第二条件是使用含硅和含氢气体的沉积气体作为第一源气体和第二源气体的条件。在第一条件下以第一气体的供给和第二气体的供给交替进行的方式供给第一源气体。

33. 发明授权

US08410486B2 Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08410486B2
公开(公告)日：2013-04-02
申请号：US13102386
申请日：2011-05-06
申请人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi
发明人： Sachiaki Tezuka , Yasuhiro Jinbo , Toshinari Sasaki , Hidekazu Miyairi
IPC分类号： H01L29/10
CPC分类号： H01L29/78648 , C23C16/24 , H01L21/02422 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： A method for manufacturing a semiconductor device having favorable electric characteristics with high productivity is provided. A first microcrystalline semiconductor film is formed over an oxide insulating film under a first condition that mixed phase grains with high crystallinity are formed at a low particle density. After that, a second microcrystalline semiconductor film is stacked over the first microcrystalline semiconductor film under a second condition that a space between the mixed phase grains are filled by the crystal growth of the mixed phase grains of the first microcrystalline semiconductor film.
摘要翻译：提供了一种制造具有高生产率的良好电特性的半导体器件的方法。在氧化物绝缘膜上形成第一微晶半导体膜，第一条件是以低的颗粒密度形成具有高结晶度的混相晶粒。之后，在第一微晶半导体膜上，通过第一微晶半导体膜的混晶相的晶体生长填充混合相晶粒之间的间隔，在第一微晶半导体膜上层叠第二微晶半导体膜。

34. 发明授权

US08283667B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08283667B2
公开(公告)日：2012-10-09
申请号：US12547119
申请日：2009-08-25
申请人： Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Erika Takahashi , Takayuki Kato , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78618
摘要： A thin film transistor is provided, which includes a gate electrode layer over a substrate, a gate insulating layer over the gate electrode layer, a layer including an amorphous semiconductor over the gate insulating layer, a pair of crystal regions over the layer including the amorphous semiconductor, and source and drain regions over and in contact with the pair of crystal regions. The source and drain regions include a microcrystalline semiconductor layer to which an impurity imparting one conductivity type is added.
摘要翻译：提供一种薄膜晶体管，其包括在衬底上的栅极电极层，栅极电极层上的栅极绝缘层，在栅极绝缘层上包括非晶半导体的层，包括非晶形的层上的一对晶体区域半导体以及与该对晶体区域接触的源极和漏极区域。源区和漏区包括添加有赋予一种导电类型的杂质的微晶半导体层。

35. 发明授权

US08242002B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08242002B2
公开(公告)日：2012-08-14
申请号：US13222076
申请日：2011-08-31
申请人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L21/20
CPC分类号： H01L21/02678 , B23K26/0732 , B23K26/0738 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1218 , H01L27/1285
摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.
摘要翻译：在玻璃基板上形成包含半导体膜的层，并加热。玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶形成半导体膜。作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

36. 发明授权

US08110442B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08110442B2
公开(公告)日：2012-02-07
申请号：US11819027
申请日：2007-06-25
申请人： Yasuhiro Jinbo
发明人： Yasuhiro Jinbo
IPC分类号： H01L21/78
CPC分类号： H01L27/1266 , H01L27/1255 , H01L29/78603
摘要： A method of manufacturing a thin TFT over a flexible substrate is provided. In formation of a TFT on a surface of a substrate having heat resistance, a liquid repellent film is formed selectively on a surface of the substrate, and an organic film is formed thereover. An element such as a TFT is formed over the organic film. Since the liquid repellent film is formed over the substrate, adhesion between the substrate and the organic film is low; therefore, the element which is formed can be peeled off from the substrate easily. Further, since the element is not transferred to another substrate, a semiconductor device which is thinner than conventional ones can be manufactured. In order to form the liquid repellent film selectively, light exposure of a front surface or a back surface of the substrate provided with a mask, a droplet discharging method, or the like is used.
摘要翻译：提供了一种在柔性基板上制造薄TFT的方法。在具有耐热性的基板的表面上形成TFT时，在基板的表面上选择性地形成疏液膜，并在其上形成有机膜。在有机膜上形成诸如TFT的元件。由于在衬底上形成疏液膜，因此衬底和有机膜之间的粘合力低; 因此，可以容易地将形成的元件从基板剥离。此外，由于元件不被转移到另一基板，所以可以制造比以往更薄的半导体器件。为了选择性地形成防液膜，使用设置有掩模的基板的前表面或后表面的曝光，液滴喷射方法等。

37. 发明授权

US08017508B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08017508B2
公开(公告)日：2011-09-13
申请号：US12887597
申请日：2010-09-22
申请人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L21/20
CPC分类号： H01L21/02678 , B23K26/0732 , B23K26/0738 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1218 , H01L27/1285
摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.
摘要翻译：在玻璃基板上形成包含半导体膜的层，并加热。玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶形成半导体膜。作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

38. 发明授权

US07867907B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07867907B2
公开(公告)日：2011-01-11
申请号：US11869951
申请日：2007-10-10
申请人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Akihisa Shimomura , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/1288 , B23K26/0661 , B23K26/0732 , G03F7/20 , G03F7/70291 , H01L27/1214 , H01L29/66757 , H01L29/66765 , H01L29/78633
摘要： The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
摘要翻译：本发明提供一种方法，通过该方法，可以在不使用抗蚀剂的情况下简单且准确地进行薄膜处理。此外，本发明提供了一种以低成本制造半导体器件的方法。在衬底上形成第一层，在第一层上形成剥离层，用剥离层侧的激光束选择性地照射剥离层，以减少剥离层的一部分的粘附性。接下来，去除粘合性降低的部分中的剥离层，并且将剥离层的左部用作掩模以选择性地蚀刻第一层。

39. 发明授权

US07611930B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07611930B2
公开(公告)日：2009-11-03
申请号：US12186001
申请日：2008-08-05
申请人： Shunpei Yamazaki , Sachiaki Teduka , Makoto Furuno , Satoshi Toriumi , Yasuhiro Jinbo , Koji Dairiki
发明人： Shunpei Yamazaki , Sachiaki Teduka , Makoto Furuno , Satoshi Toriumi , Yasuhiro Jinbo , Koji Dairiki
IPC分类号： H01L21/84
CPC分类号： H01L29/04 , H01L21/0262 , H01L27/1222 , H01L27/127 , H01L29/41733 , H01L29/66765 , H01L29/78696
摘要： In a case of forming a bottom-gate thin film transistor, a step of forming a microcrystalline semiconductor film over a gate insulating film by a plasma CVD method, and a step of forming an amorphous semiconductor film over the microcrystalline semiconductor film are performed. In the step of forming the microcrystalline semiconductor film, the pressure in the reaction chamber is set at or below 10−5 Pa once, the substrate temperature is set in the range of 120° C. to 220° C., plasma is generated by introducing hydrogen and a silicon gas, hydrogen plasma is made to act on a reaction product formed on a surface of the gate insulating film to perform removal while performing film formation. Moreover, the plasma is generated by applying a first high-frequency electric power of an HF band a second high-frequency electric power of a VHF band superimposed on each other.
摘要翻译：在形成底栅极薄膜晶体管的情况下，进行通过等离子体CVD法在栅极绝缘膜上形成微晶半导体膜的步骤，以及在微晶半导体膜上形成非晶半导体膜的步骤。在形成微晶半导体膜的步骤中，反应室中的压力设定为10-5Pa以下，基板温度设定在120℃〜220℃的范围内，等离子体由引入氢气和硅气体，使氢等离子体作用于形成在栅极绝缘膜的表面上的反应产物，以在进行成膜的同时进行除去。此外，通过施加VHF频带的第一高频电力，VHF频带的第二高频电力彼此叠加而产生等离子体。

40. 发明申请

US20090140250A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090140250A1
公开(公告)日：2009-06-04
申请号：US12325439
申请日：2008-12-01
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L21/67017 , H01L21/67207 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66742 , H01L29/66765 , H01L29/78678 , H01L29/78687 , H01L29/78696
摘要： An object is to reduce off-current of a thin film transistor. Another object is to improve electric characteristics of a thin film transistor. Further, it is still another object to improve image quality of a display device using the thin film transistor. An aspect of the present invention is a thin film transistor including a semiconductor film formed over a gate electrode and in an inner region of the gate electrode which does not reach an end portion of the gate electrode, with a gate insulating film interposed therebetween, a film covering at least a side surface of the semiconductor film, and a pair of wirings over the film covering the side surface of the semiconductor film; in which an impurity element serving as a donor is added to the semiconductor film.
摘要翻译：目的是减少薄膜晶体管的截止电流。另一个目的是改善薄膜晶体管的电特性。此外，还有另一个目的是提高使用薄膜晶体管的显示装置的图像质量。本发明的一个方面是一种薄膜晶体管，它包括半导体膜，该半导体膜形成在栅电极之上，并且在栅电极的内部区域中，其不到达栅电极的端部，栅极绝缘膜介于它们之间，至少覆盖半导体膜的侧面的膜，以及覆盖半导体膜的侧面的膜上的一对配线; 其中作为供体的杂质元素被添加到半导体膜。

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