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31. 发明授权

US4304131A Friction bearing for rotor pivot of liquid counter 失效
标题翻译：液体计数器转子枢轴摩擦轴承
公开(公告)号：US4304131A
公开(公告)日：1981-12-08
申请号：US94102
申请日：1979-11-14
申请人： Wolfgang Klein , Klaus Tocha
发明人： Wolfgang Klein , Klaus Tocha
IPC分类号： F16C33/20 , G01F1/10 , G01F15/00
CPC分类号： G01F1/10 , F16C33/20
摘要： A liquid counter having a rotor pivot operating in a stream of cryogenic medium includes a friction bearing for the rotor pivot loosely mounted in a housing while the liquid counter is operative but arrested in the housing both radially and axially.
摘要翻译：具有在低温介质流中操作的转子枢轴的液体计数器包括一个摩擦轴承，该摩擦轴承用于松动地安装在壳体中的转子枢轴，同时液体计数器可操作，但在径向和轴向上均在壳体中停留。

32. 发明授权

US4271932A Elevator guide shoe 失效
标题翻译：电梯导轨鞋
公开(公告)号：US4271932A
公开(公告)日：1981-06-09
申请号：US938900
申请日：1978-09-01
申请人： Wolfgang Klein
发明人： Wolfgang Klein
IPC分类号： B66B7/04 , B66B7/02
CPC分类号： B66B7/047 , B66B7/048
摘要： A guide shoe for an elevator has a rigid holding shoe for attachment to the elevator car. A U-shaped recess in the holding shoe accommodates a laminated slide member having a liner adapted to resist frictional wear and attack by lubricants and an intermediate layer between the liner and the holding shoe of cellular elastomeric material.
摘要翻译：用于电梯的导靴具有用于附接到电梯轿厢的刚性保持鞋。保持靴中的U形凹部容纳具有适于抵抗摩擦磨损和润滑剂侵蚀的衬垫的层压滑动构件以及衬垫和多孔弹性体材料的保持鞋之间的中间层。

33. 发明授权

US08685636B2 Heparin-insensitive method for determining direct coagulation factor inhibitors 有权
标题翻译：用于确定直接凝血因子抑制剂的肝素不敏感方法
公开(公告)号：US08685636B2
公开(公告)日：2014-04-01
申请号：US13366746
申请日：2012-02-06
申请人： Konrad Braun , Wolfgang Klein , Norbert Zander , Michael Timme
发明人： Konrad Braun , Wolfgang Klein , Norbert Zander , Michael Timme
IPC分类号： A01N1/02 , A61K38/36
CPC分类号： G01N33/86 , C12Q1/56 , G01N2500/02
摘要： The invention is in the field of coagulation diagnostics and relates to a heparin-insensitive method for determining direct coagulation factor inhibitors in a sample, in particular direct thrombin and factor Xa inhibitors.
摘要翻译：本发明在凝血诊断领域，涉及用于确定样品中直接凝血因子抑制剂的肝素不敏感方法，特别是直接凝血酶和因子Xa抑制剂。

34. 发明授权

US08530968B2 Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same 有权
公开(公告)号：US08530968B2
公开(公告)日：2013-09-10
申请号：US13599636
申请日：2012-08-30
申请人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
发明人： Wolfgang Klein , Hans Taddiken , Winfried Bakalski
IPC分类号： H01L23/62
CPC分类号： H01L23/60 , H01L27/0259 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

35. 发明授权

US08470612B2 Integrated circuits with magnetic core inductors and methods of fabrications thereof 有权
公开(公告)号：US08470612B2
公开(公告)日：2013-06-25
申请号：US12900277
申请日：2010-10-07
申请人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
发明人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
IPC分类号： H01L27/22
CPC分类号： H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

36. 发明申请

US20120086102A1 Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof 有权
标题翻译：具有磁芯电感器的集成电路及其制造方法
公开(公告)号：US20120086102A1
公开(公告)日：2012-04-12
申请号：US12900277
申请日：2010-10-07
申请人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
发明人： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
IPC分类号： H01L27/22 , H01L21/00
CPC分类号： H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.
摘要翻译：在一个实施例中，形成半导体器件的方法包括在衬底之内和/或之上形成第一电感线圈。第一电感线圈形成在衬底的顶侧附近。第一沟槽形成在与第一电感线圈相邻的衬底内。至少部分地用磁性填充材料填充第一沟槽。至少第一电感线圈下面的衬底的第一部分变薄。背面磁性层形成在基板的第一部分之下。背面磁性层和磁性填充材料形成第一电感线圈的磁芯区域的至少一部分。

37. 发明授权

US07964494B2 Integrated connection arrangements 有权
标题翻译：集成连接布置
公开(公告)号：US07964494B2
公开(公告)日：2011-06-21
申请号：US12562475
申请日：2009-09-18
申请人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck
发明人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Körner , Andrea Mitchell , Markus Schwerd , Martin Seck
IPC分类号： H01L21/4763
CPC分类号： H01L24/05 , H01L23/53228 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01061 , H01L2924/01068 , H01L2924/01073 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2224/45099
摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.
摘要翻译：提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。内导电结构设置在绝缘层一侧的切口的底部。内部导电结构在接触区域中邻接外部导电结构。接触区域设置在切口的另一侧的外部导电结构。接触区域和接触区域不重叠。切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

38. 发明申请

US20070138544A1 FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT 审中-公开
标题翻译：现场平板晶体管及其生产方法
公开(公告)号：US20070138544A1
公开(公告)日：2007-06-21
申请号：US11469011
申请日：2006-08-31
申请人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
发明人： Franz Hirler , Walter Rieger , Thorsten Meyer , Wolfgang Klein , Frank Pfirsch
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L27/04 , H01L27/0727 , H01L29/0696 , H01L29/0878 , H01L29/404 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/732 , H01L29/735 , H01L29/7803 , H01L29/7808 , H01L29/861
摘要： A field plate trench transistor having a semiconductor body is disclosed. In one embodiment, the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
摘要翻译：公开了一种具有半导体本体的场板沟槽晶体管。在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

39. 发明申请

US20060192289A1 Integrated connection arrangements 有权
公开(公告)号：US20060192289A1
公开(公告)日：2006-08-31
申请号：US11350518
申请日：2006-02-09
申请人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck
发明人： Stefan Drexl , Thomas Goebel , Johann Helneder , Martina Hommel , Wolfgang Klein , Heinrich Korner , Andrea Mitchell , Markus Schwerd , Martin Seck
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L23/53228 , H01L24/03 , H01L24/48 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05181 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01061 , H01L2924/01068 , H01L2924/01073 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2224/45099
摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

40. 发明授权

US06750483B2 Silicon-germanium bipolar transistor with optimized germanium profile 有权
标题翻译：具有优化锗型材的硅锗双极晶体管
公开(公告)号：US06750483B2
公开(公告)日：2004-06-15
申请号：US10200541
申请日：2002-07-22
申请人： Wolfgang Klein , Rudolf Lachner , Wolfgang Molzer
发明人： Wolfgang Klein , Rudolf Lachner , Wolfgang Molzer
IPC分类号： H01L29737
CPC分类号： H01L29/165 , H01L29/7378
摘要： A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.
摘要翻译：硅 - 锗双极晶体管包括硅衬底，其中形成有第一n掺杂发射极区域，与之相邻的第二p掺杂基极区域和与之相邻的第三n掺杂集电极区域。在发射极区域和基极区域之间形成第一空间电荷区域，并且在基极区域和集电极区域之间形成第二空间电荷区域。邻接发射极区域的基极区域和边缘区域与锗合金化。发射极区域中的锗浓度朝向基极区域上升。包含第一空间电荷区的结区中的锗浓度比发射极区域急剧上升或降低，并且在基极区域中其初始地再次比在结区域中急剧上升。

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