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31. 发明申请

US20110117686A1 METHOD OF FABRICATING LIGHT EXTRACTOR 有权
标题翻译：制造光提取物的方法
公开(公告)号：US20110117686A1
公开(公告)日：2011-05-19
申请号：US13000604
申请日：2009-06-03
申请人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Methods of fabricating light extractors are disclosed. The method of fabricating an optical construction for extracting light from a substrate includes the steps of: (a) providing a substrate that has a surface; (b) disposing a plurality of structures on the surface of the substrate, where the plurality of structures form open areas that expose the surface of the substrate; (c) shrinking at least some of the structures; and (d) applying an overcoat to cover the shrunk structures and the surface of the substrate in the open areas.
摘要翻译：公开了提取光的方法。制造用于从衬底提取光的光学结构的方法包括以下步骤：（a）提供具有表面的衬底; （b）在所述基板的表面上设置多个结构，其中所述多个结构形成暴露所述基板的表面的敞开区域; （c）收缩至少一些结构物; 和（d）施加外涂层以覆盖开放区域中的收缩结构和基底表面。

32. 发明授权

US08846518B2 Multilayer construction 有权
标题翻译：多层建筑
公开(公告)号：US08846518B2
公开(公告)日：2014-09-30
申请号：US13805825
申请日：2011-06-01
申请人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
发明人： Jun-Ying Zhang , Michael A. Haase , Todd A. Ballen , Terry L. Smith
IPC分类号： H01L21/3205 , H01L21/311 , C23C16/34 , H01L21/306 , H01L33/46 , C23C16/02 , B82Y20/00 , C23C14/02 , H01L21/46 , C23C14/06 , H01S5/347 , G02B6/44 , H01S5/183 , H01L33/28
CPC分类号： H01L33/06 , B82Y20/00 , C23C14/021 , C23C14/0652 , C23C16/0227 , C23C16/345 , G02B6/4439 , H01L21/30604 , H01L21/46 , H01L33/28 , H01L33/46 , H01S5/18369 , H01S5/347
摘要： A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.
摘要翻译：公开了一种多层结构。多层结构包括直接设置在II-VI半导体层上的-II-VI半导体层（110）x和Si3N4层（120）。为了改善Si 3 N 4层（120）的附着力，去除了II-VI半导体层上的自然氧化物。

33. 发明申请

US20110108858A1 STABLE LIGHT SOURCE 有权
标题翻译：稳定的光源
公开(公告)号：US20110108858A1
公开(公告)日：2011-05-12
申请号：US13003491
申请日：2009-07-14
申请人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
发明人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
IPC分类号： H01L31/173
CPC分类号： H05B33/0812 , H01L25/0753 , H01L33/502 , H01L33/507 , H05B33/0857 , Y02B20/343
摘要： Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
摘要翻译：公开了发光系统。发光系统发射具有第一颜色的输出光。发光系统包括响应于第一信号发射第一波长的光的第一电致发光器件。第一波长基本上与第一信号无关。所发射的第一波长光的强度基本上与第一信号成比例。发光系统还包括第一发光元件，其包括第二电致发光器件和第一光转换层。第二电致发光器件响应于第二信号发射第二波长的光。第一光转换层包括半导体势阱，并将第二波长的至少一部分光转换成比第二波长长的第三波长的光。发光系统将第一波长的光与第三波长的光组合，以形成第一颜色的输出光。当第一和第二信号中的一个信号从信号的最大额定值的约50％变化到最大额定值的约100％时，但是第一信号与第二信号的比率基本保持不变，输出的第一颜色光线基本保持不变。

34. 发明授权

US07389025B2 Coupling light into microresonators 有权
标题翻译：将光耦合到微谐振器中
公开(公告)号：US07389025B2
公开(公告)日：2008-06-17
申请号：US11277769
申请日：2006-03-29
申请人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
发明人： Terry L. Smith , Barry J. Koch , Michael A. Haase , Jun-Ying Zhang , Robert W. Wilson , Xudong Fan
IPC分类号： G02B6/26
CPC分类号： G02B6/34 , B82Y20/00 , G01N21/648 , G01N21/7746 , G01N2021/6439 , G02B6/1226 , G02B6/29341
摘要： An optical microresonator device is described including an optical waveguide and an optical microresonator positioned so as to optically couple to the waveguide. The waveguide includes a core and a metal cladding layer on at least part of one boundary of the core.
摘要翻译：描述了一种光学微谐振器装置，其包括光波导和光学微谐振器，其被定位成光耦合到波导。波导包括在芯的一个边界的至少一部分上的芯和金属覆层。

35. 发明授权

US08765611B2 Etching process for semiconductors 失效
标题翻译：半导体蚀刻工艺
公开(公告)号：US08765611B2
公开(公告)日：2014-07-01
申请号：US12917826
申请日：2010-11-02
申请人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
发明人： Michael A. Haase , Terry L. Smith , Jun-Ying Zhang
IPC分类号： H01L21/027
CPC分类号： H01L31/02363 , H01L21/465 , H01L33/0095 , H01L33/22 , H01L2933/0083 , Y02E10/50
摘要： A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.
摘要翻译：提供了蚀刻半导体的方法，例如II-VI或III-V半导体。该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻，去除半导体并用反应气体清洁室。蚀刻掩模包括光致抗蚀剂。使用这种方法，可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

36. 发明授权

US08748911B2 Stable light source 有权
标题翻译：稳定的光源
公开(公告)号：US08748911B2
公开(公告)日：2014-06-10
申请号：US13003491
申请日：2009-07-14
申请人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
发明人： Michael A. Haase , James A. Thielen , Catherine A. Leatherdale , Billy L. Weaver , Terry L. Smith
IPC分类号： H01L29/18
CPC分类号： H05B33/0812 , H01L25/0753 , H01L33/502 , H01L33/507 , H05B33/0857 , Y02B20/343
摘要： Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.
摘要翻译：公开了发光系统。发光系统发射具有第一颜色的输出光。发光系统包括响应于第一信号发射第一波长的光的第一电致发光器件。第一波长基本上与第一信号无关。所发射的第一波长光的强度基本上与第一信号成比例。发光系统还包括第一发光元件，其包括第二电致发光器件和第一光转换层。第二电致发光器件响应于第二信号发射第二波长的光。第一光转换层包括半导体势阱，并将第二波长的至少一部分光转换成比第二波长长的第三波长的光。发光系统将第一波长的光与第三波长的光组合，以形成第一颜色的输出光。当第一和第二信号中的一个信号从信号的最大额定值的约50％变化到最大额定值的约100％时，但是第一信号与第二信号的比率基本保持不变，输出的第一颜色光线基本保持不变。

37. 发明授权

US08461568B2 Re-emitting semiconductor construction with enhanced extraction efficiency 有权
标题翻译：重新发射半导体结构，提高了提取效率
公开(公告)号：US08461568B2
公开(公告)日：2013-06-11
申请号：US13264924
申请日：2010-04-30
申请人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
发明人： Zhaohui Yang , Yasha Yi , Catherine A. Leatherdale , Michael A. Haase , Terry L. Smith
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers forms a re-emitting semiconductor construction (RSC). The stack includes an active region that converts light at a first wavelength to light at a second wavelength, the active region including at least one potential well. The stack also includes an inactive region extending from an outer surface of the stack to the active region. Depressions are formed in the stack that extend from the outer surface into the inactive region. An average depression depth is at least 50% of a thickness of the inactive region or at least 50% of a nearest potential well distance. The depressions may have at least a 40% packing density in plan view. The depressions may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层形成再发射半导体结构（RSC）。堆叠包括将第一波长的光转换成第二波长的光的有源区，该有源区包括至少一个势阱。堆叠还包括从堆叠的外表面延伸到活动区域的无效区域。在堆叠中形成凹陷，其从外表面延伸到非活性区域。平均凹陷深度为无活性区域的厚度的至少50％或最近的潜在井距离的至少50％。在平面图中，凹陷可以具有至少40％的包装密度。凹陷部也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

38. 发明申请

US20120188519A1 PROJECTION AND DISPLAY SYSTEM 审中-公开
标题翻译：投影和显示系统
公开(公告)号：US20120188519A1
公开(公告)日：2012-07-26
申请号：US13392635
申请日：2010-08-30
申请人： Stephen J. Willett , Martin B. Wolk , Terry L. Smith , Roy A. Auerbach , Michael A. Haase , Steven G. Saxe , Tommie W. Kelley
发明人： Stephen J. Willett , Martin B. Wolk , Terry L. Smith , Roy A. Auerbach , Michael A. Haase , Steven G. Saxe , Tommie W. Kelley
IPC分类号： G03B21/14
CPC分类号： G03B21/204 , H04N9/3129 , H04N9/3138
摘要： A projection system and a display that incorporates the projection system are provided. The projection system includes at least one electroluminescent device that emits a first wavelength of light, at least one semiconductor multilayer stack that downconverts the first wavelength of light to a second wavelength of light, and a scanning optical element that transmits the light along a scanned direction. The electroluminescent device can be part of an array of electroluminescent devices, and can be monolithic. The semiconductor multilayer stack can be part of an array of semiconductor multilayer stacks, and can also be monolithic. The scanning optical element can be positioned to scan the electroluminescent device across the semiconductor multilayer stack, or it can be positioned to scan the downconverted light after it has left the semiconductor multilayer stack.
摘要翻译：提供了投影系统和包括投影系统的显示器。投影系统包括发射第一波长的光的至少一个电致发光器件，将至少一个将第一波长的光变换为第二波长的光的半导体多层叠层，以及沿扫描方向透射光的扫描光学元件。电致发光器件可以是电致发光器件的阵列的一部分，并且可以是单片的。半导体多层堆叠可以是半导体多层堆叠的阵列的一部分，并且也可以是整体的。扫描光学元件可以定位成跨越半导体多层堆叠扫描电致发光器件，或者可以将扫描光学元件定位成在其离开半导体多层堆叠之后扫描下变换的光。

39. 发明申请

US20110101402A1 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：US20110101402A1
公开(公告)日：2011-05-05
申请号：US13000592
申请日：2009-06-10
申请人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
发明人： Jun-Ying Zhang , Terry L. Smith , Michael A. Haase
IPC分类号： H01L33/00
CPC分类号： H01L33/50 , H01L33/08 , H01L33/44 , H01L2933/0091
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。外涂层具有大于第二折射率的第三折射率。

40. 发明申请

US20110101382A1 LIGHT CONVERTING CONSTRUCTION 有权
标题翻译：光转换结构
公开(公告)号：US20110101382A1
公开(公告)日：2011-05-05
申请号：US13000608
申请日：2009-06-03
申请人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
发明人： Terry L. Smith , Michael A. Haase , Jun-Ying Zhang
IPC分类号： H01L31/173 , H01L31/0232
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了光转换结构。光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。结构化外涂层具有大于第二折射率的第三折射率。

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