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31. 发明授权

US07508003B2 Production of a GaN bulk crystal substrate and a semiconductor device formed thereon 有权
标题翻译：生产GaN体晶衬底及其上形成的半导体器件
公开(公告)号：US07508003B2
公开(公告)日：2009-03-24
申请号：US11408656
申请日：2006-04-20
申请人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
发明人： Seiji Sarayama , Masahiko Shimada , Hisanori Yamane , Hirokazu Iwata
IPC分类号： H01L27/15 , H01L29/167 , H01L33/00 , C01B21/06
CPC分类号： C30B7/105 , C09K11/62 , C30B7/00 , C30B9/00 , C30B11/00 , C30B15/00 , C30B29/403 , C30B29/406 , H01L29/2003 , H01L29/7783 , Y10T117/1092 , Y10T117/1096 , Y10T428/2982
摘要： A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
摘要翻译：晶体具有1cm或更大的直径，并且对应于带边缘，在360nm波长处的阴极发光光谱中显示出最强峰。

32. 发明授权

US07220311B2 Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride 有权
公开(公告)号：US07220311B2
公开(公告)日：2007-05-22
申请号：US10702776
申请日：2003-11-07
申请人： Hirokazu Iwata , Seiji Sarayama
发明人： Hirokazu Iwata , Seiji Sarayama
IPC分类号： C30B9/02
CPC分类号： C30B29/403 , C30B9/00 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.

33. 发明申请

US20060244346A1 Piezoelectric substrate, piezoelectric resonating element and surface-mount piezoelectric oscillator 有权
标题翻译：压电基板，压电谐振元件和表面贴装压电振荡器
公开(公告)号：US20060244346A1
公开(公告)日：2006-11-02
申请号：US11475815
申请日：2006-06-26
申请人： Hirokazu Iwata
发明人： Hirokazu Iwata
IPC分类号： H01L41/08
CPC分类号： H03H9/0547 , H03H3/04 , H03H9/1021 , H03H9/17 , H03H2003/022 , H03H2003/0485
摘要： In the case where an ultraminiature piezoelectric substrate, which has a resonating portion formed by making a concavity by etching in the surface of the piezoelectric substrate made of an anisotropic crystal material, is mass-produced by batch operation using a large-area piezoelectric substrate wafer, an annular portion surrounding each concavity is formed sufficiently thick to prevent cracking from occurring when the wafer is severed. A piezoelectric substrate 2 of an anisotropic piezoelectric crystal material has a thin resonating portion 4 and a thick annular portion 5 integrally surrounding the outer marginal edge of the resonating portion to form a concavity 3 in at least one of major surfaces of the substrate; the inner wall 5a of the annular portion in the one crystal orientation slopes gently more than the inner wall in the other crystal orientation perpendicular to said one crystal orientation, and the piezoelectric substrate is longer in said one crystal orientation than in the other crystal orientation.
摘要翻译：在通过使用大面积压电基板晶片的批量操作来批量生产具有通过在由各向异性晶体材料制成的压电基板的表面中通过蚀刻形成凹陷而形成的谐振部分的超微压电基板的情况下围绕每个凹部的环形部分形成得足够厚以防止当晶片断开时发生裂纹。各向异性压电晶体材料的压电基片2具有薄的谐振部分4和一个围绕谐振部分的外边缘的厚的环形部分5，以在基片的至少一个主表面中形成凹陷3; 在一个晶体取向中的环形部分的内壁5a在垂直于所述一个晶体取向的另一个晶体取向中比内壁平缓地倾斜，并且压电基片在所述一个晶体取向上比在另一个晶体取向上更长。

34. 发明授权

US06949140B2 Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device 有权
标题翻译：晶体生长方法，晶体生长装置，III族氮化物晶体和III族氮化物半导体器件
公开(公告)号：US06949140B2
公开(公告)日：2005-09-27
申请号：US10308149
申请日：2002-12-03
申请人： Seiji Sarayama , Hirokazu Iwata , Masahiko Shimada , Hisanori Yamane , Masato Aoki
发明人： Seiji Sarayama , Hirokazu Iwata , Masahiko Shimada , Hisanori Yamane , Masato Aoki
IPC分类号： C30B9/00 , C30B11/00 , C30B17/00
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , Y10T117/1092
摘要： A group-III nitride crystal growth method, comprising the steps of: a) preparing a mixed molten liquid of an alkaline metal and a material at least comprising a group-III metal; b) growing a group-III nitride crystal of the group-III metal and nitrogen from the mixed molten liquid and a material at least comprising nitrogen; and c) setting a predetermined crystal growth condition according to a zone defined by a pressure and a temperature in said step b).
摘要翻译： III族氮化物晶体生长方法，包括以下步骤：a）制备碱金属和至少包含III族金属的材料的混合熔融液; b）从混合的熔融液体中生长III族金属的III族氮化物晶体和至少包含氮的材料; 以及c）根据由所述步骤b）中的压力和温度限定的区域来设定预定的晶体生长条件。

35. 发明授权

US06750593B2 High frequency piezoelectric resonator having reduced spurious modes 失效
标题翻译：具有降低的寄生模式的高频压电谐振器
公开(公告)号：US06750593B2
公开(公告)日：2004-06-15
申请号：US09746600
申请日：2000-12-21
申请人： Hirokazu Iwata
发明人： Hirokazu Iwata
IPC分类号： H01L4104
CPC分类号： H03H9/174 , H03H9/132 , H03H9/177 , H03H9/564
摘要： Disclosed is a piezoelectric resonator that has a piezoelectric plate that has formed thereon a pair of main electrodes and has formed thereon a second electrode surrounding the peripheral edge of the main electrode with a gap being provided between the second electrode and a peripheral edge of the main electrode. The material of the main electrode and the material of the second electrode are differentiated from each other. As the material of the second electrode there is used a material the density of that is lower than the material of the main electrode. With this construction, there is obtained means for suppressing the occurrence of spurious due to an inharmonic mode generating in the high frequency piezoelectric resonator.
摘要翻译：公开了一种压电谐振器，其具有在其上形成有一对主电极并且在其上形成有围绕主电极的周缘的第二电极的压电板，在第二电极和主体的周边之间设置有间隙电极。主电极的材料和第二电极的材料彼此不同。作为第二电极的材料，使用其密度低于主电极的材料的材料。利用这种结构，获得了用于抑制由于在高频压电谐振器中产生不协调模式而引起的寄生的发生的装置。

36. 发明授权

US09856575B2 Crystal growth apparatus and manufacturing method of group III nitride crystal 有权
公开(公告)号：US09856575B2
公开(公告)日：2018-01-02
申请号：US14853133
申请日：2015-09-14
申请人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
发明人： Seiji Sarayama , Hirokazu Iwata , Akihiro Fuse
IPC分类号： C30B19/02 , C30B9/12 , C30B9/00 , C30B17/00 , C30B29/40
CPC分类号： C30B9/12 , C30B9/00 , C30B9/10 , C30B17/00 , C30B19/02 , C30B19/062 , C30B19/106 , C30B29/40 , C30B29/403 , C30B29/406 , Y10T117/1092
摘要： A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

37. 发明授权

US09096950B2 Nitride crystal and method for producing the same 有权
标题翻译：氮化物晶体及其制造方法
公开(公告)号：US09096950B2
公开(公告)日：2015-08-04
申请号：US13164939
申请日：2011-06-21
申请人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
发明人： Takashi Satoh , Seiji Sarayama , Hirokazu Iwata , Yusuke Mori , Yasuo Kitaoka
IPC分类号： B32B7/02 , C30B29/40 , C30B9/10
CPC分类号： C30B19/02 , C30B9/10 , C30B19/08 , C30B19/10 , C30B29/403 , C30B29/406 , Y10T428/24942
摘要： A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.
摘要翻译：一种环绕晶种的外周的氮化物晶体，在一个实施方案中，氮化物晶体包括：第一部分区域和具有与第一部分区域的光学特性不同的光学特性的第二部分区域，并且具有指示晶体取向。

38. 发明申请

US20140369917A1 METHOD FOR PRODUCING N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, N-TYPE GROUP III NITRIDE SINGLE CRYSTAL, AND CRYSTAL SUBSTRATE 有权
标题翻译：生产N型III族氮化物单晶，N型III族氮化物单晶和晶体基板的方法
公开(公告)号：US20140369917A1
公开(公告)日：2014-12-18
申请号：US14474924
申请日：2014-09-02
申请人： Hirokazu Iwata
发明人： Hirokazu Iwata
IPC分类号： C30B29/40
CPC分类号： C30B29/406 , C01B21/0632 , C30B9/00 , C30B9/10 , C30B19/02 , C30B19/12 , C30B29/38 , C30B29/403 , H01B1/06 , H01L33/0075 , Y10T117/1068
摘要： A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.
摘要翻译：制造n型III族氮化物单晶的方法包括将至少包含III族元素，碱金属和氧化硼的物质的原料放入反应容器中; 通过将反应容器加热至氧化硼的熔点来熔化氧化硼; 通过将反应容器加热至III族氮化物的晶体生长温度，在反应容器中形成包含III族元素，碱金属和氧化硼的混合熔体; 通过使含氮气体与混合熔体接触将氮气混合到混合熔体中; 并且从溶解在混合熔体中的氧化硼中的III族元素，氮和氧生长出掺杂有氧作为供体的n型III族氮化物单晶。

39. 发明授权

US08623138B2 Crystal growth apparatus 有权
标题翻译：晶体生长装置
公开(公告)号：US08623138B2
公开(公告)日：2014-01-07
申请号：US12353608
申请日：2009-01-14
申请人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
发明人： Seiji Sarayama , Hisanori Yamane , Masahiko Shimada , Masafumi Kumano , Hirokazu Iwata , Takashi Araki
IPC分类号： C30B9/06
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , C30B29/406 , H01L33/007 , H01S5/32341 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1052 , Y10T117/106
摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。

40. 发明申请

US20110253034A1 CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL 有权
标题翻译：晶体制备装置，晶体制备方法和晶体
公开(公告)号：US20110253034A1
公开(公告)日：2011-10-20
申请号：US13170431
申请日：2011-06-28
申请人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
发明人： Hirokazu Iwata , Seiji Sarayama , Akihiro Fuse
IPC分类号： C30B25/08 , C30B25/02
CPC分类号： C30B9/10 , C30B17/00 , C30B29/403 , C30B29/406 , Y10T117/1024
摘要： In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.
摘要翻译：在晶体制备装置中，坩埚保持含有碱金属和III族金属的混合熔融金属。容器具有与混合熔融金属接触的容器空间，并且在容器空间和容器外部之间保持熔融碱金属，熔融碱金属与容器空间接触。气体供给装置向容器空间供给氮气。加热装置将坩埚加热至晶体生长温度。提供了晶体制备装置，使得从熔融碱金属蒸发的碱金属的蒸汽压基本上等于从混合的熔融金属蒸发的碱金属的蒸气压。

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