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31. 发明授权

US08110325B2 Substrate treatment method 有权
标题翻译：底物处理方法
公开(公告)号：US08110325B2
公开(公告)日：2012-02-07
申请号：US13022811
申请日：2011-02-08
申请人： Takafumi Niwa , Hiroshi Nakamura , Hideharu Kyouda
发明人： Takafumi Niwa , Hiroshi Nakamura , Hideharu Kyouda
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： H01L21/0273 , G03F7/0035 , H01L21/67178 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.
摘要翻译：一种基板处理方法，包括：第一处理工艺（S13至S16），用于对形成第一抗蚀剂的基板进行曝光，加热和显影，从而形成第一抗蚀剂图案;以及第二处理工艺（S17至S20），用于形成在其上形成第一抗蚀剂图案的基板上的第二抗蚀剂膜，暴露，加热和显影其上形成有第二抗蚀剂膜的基板，从而形成第二抗蚀剂图案。此外，基板处理方法在第二处理工序中基于第二抗蚀剂图案的线宽度的测量值和第二处理条件在第一处理工艺（S22至S25）中补偿第一处理条件（S26至S29）基于第一抗蚀剂图案的线宽的测量值。

32. 发明授权

US08101121B2 Hydrogen absorbing alloy for alkaline storage battery 有权
标题翻译：碱性蓄电池用吸氢合金
公开(公告)号：US08101121B2
公开(公告)日：2012-01-24
申请号：US10743745
申请日：2003-12-24
申请人： Shigekazu Yasuoka , Jun Ishida , Tetsuyuki Murata , Hiroshi Nakamura
发明人： Shigekazu Yasuoka , Jun Ishida , Tetsuyuki Murata , Hiroshi Nakamura
IPC分类号： C22C19/03 , C22C19/05 , H01M4/13
CPC分类号： H01M10/26 , H01M4/0471 , H01M4/383 , H01M4/52 , H01M10/342 , Y02E60/124
摘要： A hydrogen absorbing alloy represented by the formula Ln1−xMgxNiy−aAla (where Ln is at least one element selected from rare earth elements, 0.05≦x
摘要翻译：由式Ln1-xMgxNiy-aAla表示的吸氢合金（其中Ln为选自稀土元素中的至少一种元素，0.05≤n1E; x <0.20，2.8＆nlE; y＆nlE; 3.9和0.10＆nlE; a＆nlE; 0.25）用于碱性蓄电池。

33. 发明授权

US08074139B2 Communication method and communication device 有权
标题翻译：通讯方式及通讯装置
公开(公告)号：US08074139B2
公开(公告)日：2011-12-06
申请号：US11819290
申请日：2007-06-26
申请人： Tadanori Tezuka , Tsutomu Sekibe , Shunichi Kuromaru , Junji Michiyama , Hiroshi Nakamura , Masaaki Kondo , Takashi Nanya , Masashi Imai , Nassu Tomoyuki Bogdan
发明人： Tadanori Tezuka , Tsutomu Sekibe , Shunichi Kuromaru , Junji Michiyama , Hiroshi Nakamura , Masaaki Kondo , Takashi Nanya , Masashi Imai , Nassu Tomoyuki Bogdan
IPC分类号： H04L1/18
CPC分类号： H04L1/0025 , H04L51/063 , H04L67/32
摘要： A request change unit outputs a command as a request under control of a judgment control unit. A response condition determination unit determines a condition that is to be matched by a correct response which is to be returned from the other device-in-communication in reply to the command if the other device-in-communication operates in conformity with a protocol. A check unit checks a response received from the other device-in-communication in reply to the command, against the condition. If the received response does not match the condition but is correctable to match the condition as a result of the check, a response correction unit corrects the received response to match the condition under control of the judgment control unit.
摘要翻译：请求改变单元在判断控制单元的控制下输出作为请求的命令。响应条件确定单元如果其他设备在通信中的协议一致地操作，则确定要从其他设备在通信中返回的正确响应匹配的条件。检查单元根据该条件检查从其他通信设备接收的响应于该命令的响应。如果接收到的响应与条件不匹配，但是作为检查结果可以校正以匹配条件，则响应校正单元校正所接收的响应以与判断控制单元的控制下的条件相匹配。

34. 发明申请

US20110284154A1 LABEL AUTOMATIC APPLICATION DEVICE AND LABEL AUTOMATIC APPLICATION METHOD 审中-公开
标题翻译：标签自动应用设备和标签自动应用方法
公开(公告)号：US20110284154A1
公开(公告)日：2011-11-24
申请号：US13147410
申请日：2010-03-01
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： B32B38/10 , B32B41/00 , B32B37/02
CPC分类号： B65C9/18 , B65C2009/1888
摘要： The present invention is to provide a label automatic application device and a label automatic application method capable of easily removing a large number of single labels one by one from a label band body formed by coupling the single labels while displacing and overlapping the labels with each other in the longitudinal direction, so as to automatically apply a large amount of labels to application bodies per unit time.A label band body 8 formed by displacing a little and overlapping many single labels with each other is attached to a label transfer belt conveyor 32. The label transfer belt conveyor 32 to which the label band body 8 is attached and a product transfer belt conveyor 52 for moving application bodies 54 are arranged so that the forward directions thereof are the opposite directions to each other. The air is jetted by an air jet means 38 to a surface onto which a bonding means 5 is coated in a front end 1y of a lead label 1a of the label band body 8. The surface onto which the bonding means 5 is coated in the front end 1y of the lead label 1a is warped in the inversion direction and rolled up outward, so that the application body 54 easily comes into contact with the bonding means 5 of the front end 1y.
摘要翻译：本发明提供一种标签自动应用装置和标签自动应用方法，其能够从通过连接单个标签形成的标签带体逐个地移除大量单个标签，同时使标签彼此移位和重叠在纵向方向上，以便每单位时间自动地向应用体施加大量的标签。标签转印带式输送机32附着标签带主体8的标签转印带式输送机32和产品转印带式输送机52 用于移动的施加体54被布置成使得其向前方向彼此相反。空气由空气喷射装置38喷射到在标签带体8的引线标签1a的前端1y中涂覆有粘合装置5的表面。粘合装置5的表面被涂覆在引线标签1a的前端1y在反转方向上翘曲并向外卷起，使得施加体54容易与前端1y的接合装置5接触。

35. 发明授权

US08063207B2 Molecular assembly 有权
标题翻译：分子装配
公开(公告)号：US08063207B2
公开(公告)日：2011-11-22
申请号：US12237795
申请日：2008-09-25
申请人： Kazuhiko Umemoto , Hisato Takeuchi , Hiroshi Nakamura , Arimitsu Usuki , Makoto Fujita
发明人： Kazuhiko Umemoto , Hisato Takeuchi , Hiroshi Nakamura , Arimitsu Usuki , Makoto Fujita
IPC分类号： C07F9/80 , C07F15/00
CPC分类号： C07F15/0066
摘要： A molecular assembly comprising a host metal complex with a space formed therein, and compounds having substituents enclosed in the metal complex within the space and molecular chains bonded to the substituents and extending to the exterior of the metal complex, wherein two or more substituents are enclosed in the same space of the metal complex.
摘要翻译：包含其中形成有空间的主体金属络合物的分子组合物，以及封闭在空间内的金属络合物中的取代基和与取代基键合并延伸至金属络合物外部的分子链的化合物，其中封闭了两个或多个取代基在同一个空间的金属复合体。

36. 发明授权

US08000147B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08000147B2
公开(公告)日：2011-08-16
申请号：US12781396
申请日：2010-05-17
申请人： Tomoharu Tanaka , Hiroshi Nakamura , Ken Takeuchi , Riichiro Shirota , Fumitaka Arai , Susumu Fujimura
发明人： Tomoharu Tanaka , Hiroshi Nakamura , Ken Takeuchi , Riichiro Shirota , Fumitaka Arai , Susumu Fujimura
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C16/3404 , G11C16/3409 , G11C16/344 , G11C16/3445 , G11C16/345 , G11C16/3454 , G11C16/3459 , G11C16/3463 , G11C2211/5621
摘要： A NAND cell unit includes memory cells which are connected in series. An erase operation is effected on all memory cells. Then, a soft-program voltage, which is opposite in polarity to the erase voltage applied in an erase operation, is applied to all memory cells, thereby setting all memory cells out of an over-erased state. Thereafter, a program voltage of 20V is applied to the control gate of a selected memory cell, 0V is applied to the control gates of the two memory cells provided adjacent to the selected memory cell, and 11V is applied to the control gates of the remaining memory cells. Data is thereby programmed into the selected memory cell. The time for which the program voltage is applied to the selected memory cell is adjusted in accordance with the data to be programmed into the selected memory cell. Hence, data “0” can be correctly programmed into the selected memory cell, multi-value data can be read from any selected memory cell at high speed.
摘要翻译： NAND单元单元包括串联连接的存储单元。对所有存储单元进行擦除操作。然后，将与擦除操作中施加的擦除电压极性相反的软编程电压施加到所有存储单元，从而将所有存储单元设置为过擦除状态。此后，将20V的编程电压施加到所选择的存储单元的控制栅极，将0V施加到与所选存储单元相邻设置的两个存储单元的控制栅极，并且将11V施加到其余的控制栅极记忆细胞因此数据被编程到所选择的存储单元中。根据要编程到所选择的存储单元中的数据来调整对所选存储单元施加编程电压的时间。因此，可以将数据“0”正确地编程到所选择的存储单元中，可以从任何选择的存储单元高速读取多值数据。

37. 发明授权

US07949187B2 Character string recognition method and device 有权
标题翻译：字符串识别方法和装置
公开(公告)号：US07949187B2
公开(公告)日：2011-05-24
申请号：US11693139
申请日：2007-03-29
申请人： Hiroshi Nakamura
发明人： Hiroshi Nakamura
IPC分类号： G06K9/34 , G06K9/38 , G06K9/18 , G06K9/00 , G06K15/02 , H04N1/40
CPC分类号： G06K9/3283 , G06K2209/01
摘要： A character string recognition method for recognizing a character string may include a first step in which a first projection data of image data are calculated in a direction of the character string and a second step in which a position of the character string is detected on the basis of the first projection data. In the first step, the image data are divided into a plurality of segments in the direction of the character string and projection in the segment is calculated. The method may further include a third step in which a second projection data in the segment are calculated on the basis of the position of the character string and a fourth step in which a position where the second projection data exceeds a threshold value is detected as a boundary position of a character, and the threshold value may be changed according to pixel number between both ends of the character string.
摘要翻译：用于识别字符串的字符串识别方法可以包括：第一步骤，其中在字符串的方向上计算图像数据的第一投影数据;以及第二步骤，其中基于字符串的位置检测字符串的第一投影数据。在第一步骤中，将图像数据沿字符串的方向划分成多个段，并计算段中的投影。该方法还可以包括第三步骤，其中基于字符串的位置来计算段中的第二投影数据，并且第四步骤，其中第二投影数据超过阈值的位置被检测为字符的边界位置和阈值可以根据字符串的两端之间的像素数进行改变。

38. 发明申请

US20110096606A1 SEMICONDUCTOR INTEGRATED CIRCUIT ADAPTED TO OUTPUT PASS/FAIL RESULTS OF INTERNAL OPERATIONS 有权
公开(公告)号：US20110096606A1
公开(公告)日：2011-04-28
申请号：US12981063
申请日：2010-12-29
申请人： Hiroshi Nakamura , Kenichi Imamiya , Toshio Yamamura , Koji Hosono , Koichi Kawai
发明人： Hiroshi Nakamura , Kenichi Imamiya , Toshio Yamamura , Koji Hosono , Koichi Kawai
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G06F3/0659 , G06F12/0246 , G11C7/065 , G11C7/1006 , G11C7/1051 , G11C7/106 , G11C7/1063 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/26 , G11C2207/104 , G11C2216/14
摘要： In a semiconductor integrated circuit, an internal circuit is capable of executing a first operation and a second operation concurrently, and an output circuit outputs to the outside of the semiconductor integrated circuit information indicating whether or not the first operation is being executed and information indicating whether or not the second operation is executable.

39. 发明授权

US07893477B2 Nonvolatile semiconductor memory 有权
公开(公告)号：US07893477B2
公开(公告)日：2011-02-22
申请号：US11829320
申请日：2007-07-27
申请人： Hiroshi Watanabe , Hiroshi Nakamura , Kazuhiro Shimizu , Seiichi Aritome , Toshitake Yaegashi , Yuji Takeuchi , Kenichi Imamiya , Ken Takeuchi , Hideko Oodaira
发明人： Hiroshi Watanabe , Hiroshi Nakamura , Kazuhiro Shimizu , Seiichi Aritome , Toshitake Yaegashi , Yuji Takeuchi , Kenichi Imamiya , Ken Takeuchi , Hideko Oodaira
IPC分类号： H01L27/108 , H01L29/73
CPC分类号： H01L27/11521 , G11C16/0483 , G11C16/10 , H01L27/105 , H01L27/115 , H01L27/11524 , H01L27/11526 , H01L27/11529
摘要： A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.

40. 发明授权

US07854821B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07854821B2
公开(公告)日：2010-12-21
申请号：US11445385
申请日：2006-06-02
申请人： Hiroshi Nakamura , Seiichi Kaise
发明人： Hiroshi Nakamura , Seiichi Kaise
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , H01J37/32082 , H01J2237/2001 , H01L21/67253 , H01L21/67276 , H01L21/67742 , Y10T279/23
摘要： A substrate processing apparatus includes a heat transfer gas supply mechanism to supply a heat transfer gas through a supply passage into a portion between a worktable and a substrate to improve thermal conductivity between therebetween. Under the control of a control section, the pressure inside the supply passage is measured to obtain a pressure measurement value while the substrate is placed on the worktable. Then, a preparatory flow rate of the heat transfer gas to be supplied through the supply passage into the portion between the worktable and substrate is determined, in accordance with the pressure difference between the pressure measurement value and a pressure reference value, prior to a main process to be performed on the substrate. Then, the heat transfer gas is supplied through the supply passage into the portion between the worktable and substrate at the preparatory flow rate, prior to the main process.
摘要翻译：基板处理装置包括：传热气体供给机构，用于将传热气体通过供给通道供应到工作台和基板之间的部分，以提高它们之间的导热性。在控制部分的控制下，测量供给通道内的压力，以便在将基板放置在工作台上时获得压力测量值。然后，根据压力测量值和压力基准值之间的压力差，在主体之间确定通过供给通道供给到工作台和基板之间的部分的传热气体的预备流量在基板上进行的处理。然后，在主工序之前，传热气体以预备流量通过供给通道供给到工作台和基板之间的部分。

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