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31. 发明专利

JP2000021779A MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT MANUFACTURING APPARATUS USING THE METHOD 失效
公开(公告)号：JP2000021779A
公开(公告)日：2000-01-21
申请号：JP18108698
申请日：1998-06-26
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor element, wherein a semiconductor substrate is laid in a raw material gas atmosphere to deposit a product originating from the raw material gas on the semiconductor substrate surface, thereby forming a thin film on the substrate surface whereby it is possible to suppress the contamination of the semiconductor element with dust produced in the raw material gas atmosphere or byproducts deposited to a reactor chamber or pipings, and to improve the product yield and throughput. SOLUTION: In this semiconductor element manufacturing method in which a semiconductor substrate 3 is laid in a raw material gas atmosphere to deposit a product originating from the raw material gas on the semiconductor substrate 3 surface, thereby forming a thin film on the semiconductor substrate 3 surface, a gas capable of suppressing the adherence of byproducts which are produced with particles or in the raw material gas atmosphere to the apparatus walls is fed in a reaction system 2 to remove the byproducts produced in the atmosphere.

32. 发明专利

JPH07245264A VAPOR GROWTH DEVICE 失效
公开(公告)号：JPH07245264A
公开(公告)日：1995-09-19
申请号：JP3277694
申请日：1994-03-03
申请人： TOSHIBA CORP
发明人： KATAOKA TAKASHI , AKAGAWA KEIICHI , MATSUI ISAO
IPC分类号： H01L21/683 , H01L21/205 , H01L21/68
摘要： PURPOSE:To provide a vapor growth device which can grow a thin film with a uniform film quality by uniformly retaining the temperature distribution on the surface of a substrate when the pressure in a reaction oven is low and a radiation heat is dominant for transferring heat. CONSTITUTION:The device is provided with a substrate holder 5 for supporting a substrate 8 provided in a reaction oven 2, a heater 7 for heating the substrate holder 5, a supply port 3 for supplying gas for forming a thin film on the surface of the substrate 8 into the reaction oven 2, and a substrate supporting member 10 which is supported by the substrate holder 5 at the peripheral edge of the substrate holder 5 and at the same time supports the substrate 8 while being in contact with the periphery edge of the substrate 8 and consists of an optically transparent member.

33. 发明专利

JPH0529308A MANUFACTURE OF THIN FILM 失效
公开(公告)号：JPH0529308A
公开(公告)日：1993-02-05
申请号：JP18215191
申请日：1991-07-23
申请人： TOSHIBA CORP
发明人： MATSUI ISAO , UI AKIO
IPC分类号： H01L21/205 , H01L21/316
摘要： PURPOSE:To provide a film formation method which can form a film favorable in step coverage in a groove at high aspect ratio. CONSTITUTION:A sample 4, where a groove or a step is made on the surface, is stored in a vessel 1, and one or more kinds of gas, which is selected from among organic silane gas containing, at least, SiHxF4-x(x is an optional integer selected from 0-3), Si2HyF6-y (y is an optional integer selected from 0-5), or halogen gas, and reactive gas, which contains oxygen capable of chemically reacting with this material gas, are introduced as material gas from a gas introduction port 6 into a reactor 1 while being excited by a plasma device 8 so as to form a film in the groove or at the step on the surface of the sample 4.

34. 发明专利

JPH01216522A HEAT TREATING METHOD FOR SEMICONDUCTOR SUBSTRATE AND HEAT TREATING APPARATUS USED FOR THIS METHOD 失效
公开(公告)号：JPH01216522A
公开(公告)日：1989-08-30
申请号：JP4064188
申请日：1988-02-25
申请人： TOSHIBA CORP , TOSHIBA MACHINE CO LTD , TOSHIBA ELECTRONIC DEVICE ENG
发明人： TOISHI TOSHIHIKO , MURANAKA TSUNEO , MATSUO TAKESHI , MATSUI ISAO , KAWACHI YASUNOBU , GOTO YOICHI , TAKE KUNIAKI
IPC分类号： H01L21/22 , H01L21/205 , H01L21/31
摘要： PURPOSE:To suppress the warping and deformation of semiconductor substrates and to perform heat treatment efficiently, by placing the semiconductor substrates in a microwave electromagnetic field, performing direct induction heating, and providing heaters which absorb microwaves and emits heat in the vicinity of the semiconductor substrates. CONSTITUTION:A microwave oven 11 is formed in a box shape with metal plates so that microwaves that are introduced in the inside do not leak to the outside. A door 12 is provided at a part. A microwave generating source 14 is connected to a part of the ceiling of the oven through a waveguide 13. A gas exhaust pipe 17 is provided at a part of the bottom wall of the oven. The rotary shaft of an external motor 18 is provided at the central part so as to penetrate the wall. A rotary stage 19 is fixed to the rotary stage in the oven. A quartz susceptor 20 is mounted on the stage 19. Generally disk-shaped heaters 21 absorb the microwave and emit heat. A plurality of the heaters 21 comprising silicon carbide are held on the susceptor 20 at a specified interval so that the heaters can be mounted and removed. A plurality of semiconductor substrates 22 under heat treatment are mounted between a plurality of the heaters 21 at an equal interval.

35. 发明专利

JPS6482613A CHEMICAL VAPOR GROWTH EQUIPMENT 失效
公开(公告)号：JPS6482613A
公开(公告)日：1989-03-28
申请号：JP24140487
申请日：1987-09-25
申请人： TOSHIBA CORP
发明人： AKAGAWA KEIICHI , MATSUI ISAO
IPC分类号： H01L21/205 , C23C16/44 , C23C16/458 , C30B25/12
摘要： PURPOSE:To improve the equipment operating efficiency by providing a cooling pipe which contacts a cooling fluid with the susceptor to forcibly cool the susceptor, thereby quickly cooling a crystal substrate after the completion of a vapor growth. CONSTITUTION:A cooling piping 21 through the bottom of a reaction tube 11, and the gas nozzles 22 of this piping 21 are placed oppositely and closely to the bottom of a susceptor 15. Into a gas inlet port 23 of the piping 21 is introduced a cooling gas, for instance, H2 through valves 24, 25, whereby H2 is caused to blow against the bottom of the susceptor 15. By causing a cooling gas such as H2 to blow against the susceptor 15 through the piping 21 after the completion of a vapor growth in this way, a crystal substrate 14 can quickly be cooled along with the susceptor 15.

36. 发明专利

JPS6364322A VAPOR PHASE EPITAXY EQUIPMENT 失效
公开(公告)号：JPS6364322A
公开(公告)日：1988-03-22
申请号：JP20768286
申请日：1986-09-05
申请人： TOSHIBA CORP
发明人： AKAGAWA KEIICHI , MATSUI ISAO
IPC分类号： H01L21/205
摘要： PURPOSE:To reduce the distoution of a reaction tube, and improve the workability of washing, by arranging a pipe body around the reaction tube independently and supplying a gap between the reaction tube and the pipe body with a cooling fluid to cool the reaction tube. CONSTITUTION:Outside a reaction tube 1, a cylinder 10 to cool it with cold air is arranged independently of the reaction tube 1. The cold air which flowed into the cylinder from the cold air introducing inlet A of a reaction tube pressing ring 12 cools the ring 12 and a plate 13, too. Then it collides with the reaction tube 1, and moves upward as shown by arrows. The cold air flows while removing the heat of the reaction tube 1, the ring 12, and the plate 13, so that the temperature rise of the reaction tube 1 and the plate 13 can be prevented. Thereby, the distortion of the reaction tube 1 can be removed, and the workability of washing can be improved.

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