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31. 发明专利

JPH11332090A CURRENT-LIMITING DEVICE 失效
公开(公告)号：JPH11332090A
公开(公告)日：1999-11-30
申请号：JP13662998
申请日：1998-05-19
申请人： TOKYO ELECTRIC POWER CO , TOSHIBA CORP
发明人： IWATA YOSHIHIRO , OKUMA TAKESHI , SATO AYAFUMI , YAMAGUCHI MITSUGI , MATSUZAKI JUN , TSURUNAGA KAZUYUKI , URATA MASAMI , NOMURA SHIYUNJI , HAMASHIMA KOTARO
IPC分类号： H02H9/02 , G05F1/10 , H02M1/00
摘要： PROBLEM TO BE SOLVED: To facilitate insulation easily at low temperatures by reducing voltage which is applied to a reactor. SOLUTION: The primary sides of transformers 1a, 1b, 1c, corresponding to three phases of a three-phase AC system respectively, are serially connected to the three-phase AC system. one end of the secondary sides of each of the transformers 1a, 1b, 1c is shorted, and the the other end is connected with a rectifier 1d (1e, 1f) in which two diodes are connected in parallel in the opposite directions. On the opposite side of these rectifiers 1d, 1e, 1f from those connected to the transformers 1a, 1b, 1c the diodes of the same polarity are connected to each other. Between the positive and the negative side of the diodes, a reactor 1g is connected.

32. 发明专利

JPH11262200A SUPERCONDUCTING POWER STORAGE EQUIPMENT 失效
公开(公告)号：JPH11262200A
公开(公告)日：1999-09-24
申请号：JP6323798
申请日：1998-03-13
申请人： TOSHIBA CORP
发明人： SHINOHARA HIROFUMI , TEZUKA MASARU , HAMASHIMA KOTARO
IPC分类号： H01F38/14 , H01F6/00 , H01F6/04 , H01F36/00 , H02J3/32 , H02J15/00
摘要： PROBLEM TO BE SOLVED: To lower the initial cost and operation cost for storing energy for stabilizing a power system and leveling a load. SOLUTION: An oxide superconducting coil 1 is stored in a coil case 2, supported by a plurality of heat-insulating supporting legs 6, and an AC-to-DC converter 7 for converting power to be stored in the oxide superconduting coil 1 as energy or to be discharged into DC or AC, and a refrigerator 9 for directly transmitting the cold heat to the oxide superconduting coil 1 via a heat exchanger plate for cooling the coil 1 are built-in into the spaces between the heat-insulating supporting legs in the coil case 2. The oxide superconducting coil 1, the AC-to-DC converter 7, and the refrigerator 9 constitute a unit equipment 22. A superconducting power storage equipment has a plurality of the unit equipment provided.

33. 发明专利

JPH08264039A SUPERCONDUCTING CABLE 失效
公开(公告)号：JPH08264039A
公开(公告)日：1996-10-11
申请号：JP28533095
申请日：1995-11-01
申请人： JAPAN ATOMIC ENERGY RES INST , TOSHIBA CORP
发明人： KOIZUMI NORIKIYO , ONO MICHITAKA , HAMASHIMA KOTARO , FUJIOKA TSUTOMU
IPC分类号： H01F6/06 , H01B12/08
摘要： PURPOSE: To provide a superconducting cable capable of concurrently securing stability and reducing the AC loss. CONSTITUTION: This superconducting cable is provided with stranded wires twisted with multiple superconducting strands 11...11. The stranded wires are formed with multiple primary stranded wires 12...12 twisted with multiple superconducting strands 11...11, multiple secondary stranded wires 13...13 twisted with multiple primary stranded wires 12...12, and a tertiary stranded wire (high- order stranded wire) 14 twisted with multiple secondary stranded wires 13...13. The electrical resistance value for the unit length between the stranded wires of the same twist order is set larger between the stranded wires having a higher twist order.

34. 发明专利

JPH0714441A SUPERCONDUCTING CABLE 失效
公开(公告)号：JPH0714441A
公开(公告)日：1995-01-17
申请号：JP15197493
申请日：1993-06-23
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO , SHIMADA MAMORU , ONO MICHITAKA
IPC分类号： H01B12/08
摘要： PURPOSE:To prevent a quenching and to improve the stability of the superconducting condition by diverging rapidly the current of a superconducting wire transferred from a normal conductivity. CONSTITUTION:Plural superconducting wires 21 to 23 whose surfaces are insulating processed are stranded to form a superconducting cable. And in order to reduce the AC loss generated between the superconducting wires 21 to 23, short- circuit parts 11 to short circuit electrically each other at all the superconducting wires are formed at a specific interval Lp.

35. 发明专利

JPH0427107A SUPERCONDUCTING TRANSFORMER 失效
公开(公告)号：JPH0427107A
公开(公告)日：1992-01-30
申请号：JP13133190
申请日：1990-05-23
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO
IPC分类号： H01F36/00
摘要： PURPOSE:To achieve recovery to superconduction promptly even when short-circuiting is canceled and prevent a steady heat from entering easily by using a commercial frequency and by connecting a thermal type permanent current switch in series with a main coil winding in a four coil winding structure which is equipped with the primary and secondary main coil windings and primary and secondary auxiliary coil windings which are connected in parallel with them. CONSTITUTION:A main coil winding 1 on a primary side and a main coil winding 2 on a secondary side are wound on a core 3. Thermal type permanent current switches 41 and 42 are connected in series with the main coil winding. Also, Auxiliary coil windings 11 and 21 whose leakage reactance is increased are connected in parallel with the main coil winding and the thermal type permanent current switch. These coil windings and thermal type permanent current switches are placed within a cryostat 5 and are cooled to a liquid helium temperature. When a large amount of current flows, the thermal type permanent current switches 41 and 42 are turned off for high-resistance state at the same time when quench of the main coil winding occurs. After short-circuiting is canceled, current flowing to the main coil winding is further reduced and superconductive state is recovered. The permanent current switch is recovered to be on and current flowing to the auxiliary coil winding is shifted to the main coil winding for returning to the initial steady state.

36. 发明专利

JPH03150806A SUPERCONDUCTOR 失效
公开(公告)号：JPH03150806A
公开(公告)日：1991-06-27
申请号：JP28874989
申请日：1989-11-08
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO
IPC分类号： H01F6/06
摘要： PURPOSE:To provide a superconductor with less degradation due to strain, with good superconducting characteristics, and with good cryogenic stability in high flux density by arranging superconducting monolithic wire and stabilizer symmetrically with respect to a neutral axis. CONSTITUTION:Superconducting monolithic wire 1 is composed of thin superconducting conductors of NbTi or Nb3Sn. The monolithic wire and a stabilizer 2 of 99.99% or purer aluminum are set in two-piece copper housing 3 made of oxygen free copper. The conductors are arranged symmetrically with respect to a neutral axis and joined by soldering to form a superconductor. Since the bending strain caused by winding the conductor is substantially equal on both sides of the superconductor 1, a minimized strain is suffered, thereby minimizing the degradation of superconducting characteristics due to the strain. It is possible to provide a superconductor which has good cryogenic stability and good superconducting characteristics.

37. 发明专利

JPH01138492A NUCLEAR FUSION REACTION DEVICE 失效
公开(公告)号：JPH01138492A
公开(公告)日：1989-05-31
申请号：JP29511687
申请日：1987-11-25
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO
IPC分类号： G21B1/11 , G21B1/00 , G21B1/17
摘要： PURPOSE:To suppress an unstable mode wherein a growing speed is slow by a simple device by forming a shell for plasma stabilization of a material containing an oxide superconductor around a high-temperature plasma generated by the title nuclear fusion reaction device. CONSTITUTION:Plasma 1 is generated by a poloidal coil and confined to the magnetic field of a toroidal coil. The shell 2 containing the oxide superconductor is arranged at the periphery of the plasma 1. This superconductor is made of stainless steel, copper, etc. Consequently, the shell 2 traps magnetic flux between the plasma 1 and shell 2 and even if the plasma 1 deforms owing to some disturbance, the magnetic pressure at the part rises to restore the plasma 1 to its original shape. The oxide superconductor is effective when the growing speed of the deformation of the plasma is slow because of the magnetic field can not be diffused therein because of Meissner effect.

38. 发明专利

JPH01123421A PLASMA ETCHING APPARATUS 失效
公开(公告)号：JPH01123421A
公开(公告)日：1989-05-16
申请号：JP28100287
申请日：1987-11-09
申请人： TOSHIBA CORP
发明人： FUJIWARA NAOYOSHI , HAMASHIMA KOTARO , HIKICHI TAKASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform high speed etching characterized by less damages to a pattern on a wafer, by attaching a diamagnetic material to a wafer stage, and enhancing a magnetic field required for ECR discharge by the magnetic shield effect of the diamagnetic material. CONSTITUTION:A diamagnetic material 13 comprising a ceramic based or oxide based high temperature superconductor and the like is attached in a wafer stage 5. A magnetic field coil 14 generates a magnetic field for ECR discharge. At the same time, generated magnetic lines of force are going to pass through the wafer stage 5. The magnetic lines of force M are extremely diverged on the wafer stage 5 by the diamagnetic action of the diamagnetic material 3, which is provided in the wafer stage 5. Plasma is drifted by the magnetic field formed by the magnetic lines of force M and an electric field E, which is generated by conventional high frequency discharge. The plasma acts on a wafer 5 effectively. Thus, high speed etching characterized by less damages of the pattern on the wafer 5 can be performed.

39. 发明专利

JPS6436003A MEASURING WIRE FOR CRYOGENIC DEVICE 失效
公开(公告)号：JPS6436003A
公开(公告)日：1989-02-07
申请号：JP19035687
申请日：1987-07-31
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO
IPC分类号： H01F6/00 , G01K7/16 , G01L1/22 , G01R19/00 , G01R33/035 , H01L39/00
摘要： PURPOSE:To keep an evaporation quantity of a cooling medium with little latent heat such as liquid helium or the like at an extremely low value and to execute an accurate measuring operation by a method wherein an oxide superconducting conductor is connected to a measuring element set at an extremely low temperature and a wire of copper, Al or an alloy of these is connected to a region whose temperature is higher than a critical temperature of the oxide superconducting conductor. CONSTITUTION:Terminals of a measuring element 2 installed in an extremely low temperature region 1 are connected to oxide superconducting conductors 3. Wires of copper or Al or an alloy of these are connected to the oxide superconducting conductors 3 in a temperature region 4 of a cooling medium whose critical temperature is lower than that of the oxide superconducting conductors 3, whose latent heat is large, whose cost is low and which is not dangerous and in another region whose temperature is higher than that temperature. If the oxide superconducting conductors 3 are composed of a Y-Ba-Cu-O-based material, the temperature region 4 of the cooling medium can be set at a temperature of liquid nitrogen. By this setup, because the oxide superconducting conductors 3 display a superconducting state at a temperature of lower than their critical temperature, a large electric current which is lower than a critical current value can be supplied to the measuring element without generating the heat.

40. 发明专利

JPS642321A PLASMA ETCHING DEVICE 失效
公开(公告)号：JPS642321A
公开(公告)日：1989-01-06
申请号：JP15865287
申请日：1987-06-25
申请人： TOSHIBA CORP
发明人： HAMASHIMA KOTARO , FUJIWARA NAOYOSHI , NINOMIYA MASAHARU , YOSHIDA MASAO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make it possible to conduct high speed etching by a method wherein the etching is conducted by confining the plasma of etching gas produced by the microwave excitation between paralleled flat-plate electrodes using a magnetic field applying means. CONSTITUTION:Etching gas is introduced into the quartz tube 2 of a vacuum container 1, magnetic field is generated by applying a current on coils 7A and 7B, and at the same time, microwaves are generated by a magnetron 10, and plasma is generated by allowing the magnetic field and high frequency electric field to work on the etching gas. As bias voltage is applied between the electrodes 4 and 6, plasma ions are accelerated, and the wafer 5 placed on the electrode 4 is etched. At this time, plasma is confined between the electrodes 4 and 6 by magnetic field Mmirror and MCUSP for confinement. Accordingly, plasma density can be enhanced, and high-speed etching can be conducted without giving damage on the wafer.

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