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31. 发明授权

US07927952B2 Method of manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07927952B2
公开(公告)日：2011-04-19
申请号：US12128326
申请日：2008-05-28
申请人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L21/336
CPC分类号： H01L29/0619 , H01L29/0615 , H01L29/1095 , H01L29/66734
摘要： A method of manufacturing semiconductor devices comprises forming an semiconductor layer of the first conduction type on a substrate of the first conduction type; forming an anti-oxidizing layer on the surface of the semiconductor layer of the first conduction type, the anti-oxidizing layer having an aperture only through a region for use in formation of a guard ring layer of the second conduction type; forming the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type through implantation of ions into a surface where said anti-oxidizing layer is formed; forming an oxide layer at least in the aperture; forming a base layer of the second conduction type adjacent to the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type; and forming a diffused layer of the first conduction type through implantation of ions into the base layer of the second conduction type.
摘要翻译：制造半导体器件的方法包括在第一导电类型的衬底上形成第一导电类型的半导体层; 在第一导电类型的半导体层的表面上形成抗氧化层，所述抗氧化层仅通过用于形成所述第二导电类型的保护环层的区域具有孔; 通过将离子注入形成所述抗氧化层的表面，在第一导电类型的半导体层的表面中形成第二导电类型的保护环层; 至少在所述孔中形成氧化物层; 在第一导电类型的半导体层的表面中形成与第二导电类型的保护环层相邻的第二导电类型的基极层; 以及通过将离子注入第二导电类型的基极层而形成第一导电类型的扩散层。

32. 发明申请

US20080299725A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080299725A1
公开(公告)日：2008-12-04
申请号：US12128326
申请日：2008-05-28
申请人： Miwako AKIYAMA , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako AKIYAMA , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L21/336
CPC分类号： H01L29/0619 , H01L29/0615 , H01L29/1095 , H01L29/66734
摘要： A method of manufacturing semiconductor devices comprises forming an semiconductor layer of the first conduction type on a substrate of the first conduction type; forming an anti-oxidizing layer on the surface of the semiconductor layer of the first conduction type, the anti-oxidizing layer having an aperture only through a region for use in formation of a guard ring layer of the second conduction type; forming the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type through implantation of ions into a surface where said anti-oxidizing layer is formed; forming an oxide layer at least in the aperture; forming a base layer of the second conduction type adjacent to the guard ring layer of the second conduction type in the surface of the semiconductor layer of the first conduction type; and forming a diffused layer of the first conduction type through implantation of ions into the base layer of the second conduction type.
摘要翻译：制造半导体器件的方法包括在第一导电类型的衬底上形成第一导电类型的半导体层; 在第一导电类型的半导体层的表面上形成抗氧化层，所述抗氧化层仅通过用于形成所述第二导电类型的保护环层的区域具有孔; 通过将离子注入形成所述抗氧化层的表面，在第一导电类型的半导体层的表面中形成第二导电类型的保护环层; 至少在所述孔中形成氧化物层; 在第一导电类型的半导体层的表面中形成与第二导电类型的保护环层相邻的第二导电类型的基极层; 以及通过将离子注入第二导电类型的基极层而形成第一导电类型的扩散层。

33. 发明授权

US5985708A Method of manufacturing vertical power device 失效
标题翻译：垂直功率器件的制造方法
公开(公告)号：US5985708A
公开(公告)日：1999-11-16
申请号：US816596
申请日：1997-03-13
申请人： Akio Nakagawa , Naoharu Sugiyama , Tomoko Matsudai , Norio Yasuhara , Atsusi Kurobe , Hideyuki Funaki , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Akio Nakagawa , Naoharu Sugiyama , Tomoko Matsudai , Norio Yasuhara , Atsusi Kurobe , Hideyuki Funaki , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L27/12 , H01L29/73 , H01L29/739 , H01L29/786 , H01L21/8249
CPC分类号： H01L29/78696 , H01L27/1203 , H01L29/7317 , H01L29/7394 , H01L29/78612 , H01L29/78624 , H01L29/78639 , H01L29/78645 , H01L29/78687
摘要： A semiconductor apparatus comprising a vertical type semiconductor device having a first conducting type semiconductor substrate, a drain layer formed on the surface of the semiconductor substrate, a drain electrode formed on the surface of the drain layer, a second conducting type base layer selectively formed on the surface of the semiconductor substrate opposite to the drain layer, a first conducting type source layer selectively formed on the surface of the second conducting type base layer, a source electrode formed on the first conducting type source layer and the second conducting type base layer, and a gate electrode formed in contact with the first conducting type source layer, the second conducting type base layer and the semiconductor substrate through a gate insulating film and a lateral semiconductor device having an insulating layer formed in a region of the surface of the semiconductor substrate different from the second conducting type base layer, and a polycrystalline semiconductor layer formed on the insulating layer and having a first conducting type region and a second conducting type region, wherein the first conducting type source layer of the vertical semiconductor device and the first conducting type region of the polycrystalline semiconductor layer are simultaneously formed.
摘要翻译：一种半导体装置，包括具有第一导电型半导体衬底的垂直型半导体器件，形成在半导体衬底的表面上的漏极层，形成在漏极层的表面上的漏电极，第二导电型基极层，所述半导体衬底的与所述漏极层相对的表面，选择性地形成在所述第二导电型基极层的表面上的第一导电型源极层，形成在所述第一导电型源极层和所述第二导电型基极层上的源电极，以及通过栅极绝缘膜与第一导电型源极层，第二导电型基极层和半导体基板接触形成的栅电极，以及在半导体基板的表面的区域中形成有绝缘层的侧面半导体装置不同于第二导电型基底层，和多晶半导体层形成在绝缘层上并具有第一导电类型区域和第二导电类型区域，其中垂直半导体器件的第一导电型源极层和多晶半导体层的第一导电类型区域同时形成。

34. 发明申请

US20120086073A1 POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20120086073A1
公开(公告)日：2012-04-12
申请号：US13327644
申请日：2011-12-15
申请人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/063 , H01L29/0634 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66734 , H01L29/7813
摘要： A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant.
摘要翻译：垂直功率半导体器件包括形成在电池部分和终端部分中的第一导电类型的第一半导体层，围绕电池部分的端接部分，形成在第一半导体层上的第二导电类型的第二半导体层单元部分，部分地形成在第二半导体层上的第一导电类型的第三半导体层和形成在终端部分中的第一半导体层上的第二导电类型的保护环层。保护环层中的净杂质浓度一般是倾斜的，在其下侧相对较高，而在其上侧相对较低。或者，保护环层中的净杂质浓度恒定。

35. 发明授权

US07919811B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07919811B2
公开(公告)日：2011-04-05
申请号：US12122165
申请日：2008-05-16
申请人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734
摘要： A semiconductor device includes a second-conductivity-type base region provided on a first-conductivity-type semiconductor layer, a first-conductivity-type source region provided on the second-conductivity-type base region, a gate insulating film covering an inner wall of a trench which passes through the second-conductivity-type base region and reaching the first-conductivity-type semiconductor layer, a gate electrode buried in the trench via the gate insulating film, and a second-conductivity-type region being adjacent to the second-conductivity-type base region below the first-conductivity-type source region, spaced from the gate insulating film, and having a higher impurity concentration than the second-conductivity-type base region. c≧d is satisfied, where d is a depth from an upper surface of the first-conductivity-type source region to a lower end of the gate electrode, and c is a depth from an upper surface of the first-conductivity-type source region to a lower surface of the second-conductivity-type base region.
摘要翻译：半导体器件包括设置在第一导电型半导体层上的第二导电型基极区域，设置在第二导电型基极区域上的第一导电型源极区域，覆盖内壁的栅极绝缘膜通过所述第二导电型基极区域并到达所述第一导电型半导体层的沟槽，经由所述栅极绝缘膜埋设在所述沟槽中的栅电极，以及与所述第二导电型基极区相邻的第二导电型区域与第一导电型源极区域相邻的第二导电型基极区域，与栅极绝缘膜间隔开，并且具有比第二导电型基极区域更高的杂质浓度。 c≥d，其中d是从第一导电型源极区的上表面到栅电极的下端的深度，c是从第一导电型源的上表面的深度区域延伸到第二导电型基极区域的下表面。

36. 发明申请

US20090242977A1 SEMICONDUCTOR DEVICE AND DC-DC CONVERTER 有权
标题翻译：半导体器件和DC-DC转换器
公开(公告)号：US20090242977A1
公开(公告)日：2009-10-01
申请号：US12408056
申请日：2009-03-20
申请人： Yusuke KAWAGUCHI , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
发明人： Yusuke KAWAGUCHI , Miwako Akiyama , Yoshihiro Yamaguchi , Nobuyuki Sato , Shigeaki Hayase
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L29/0696 , H01L29/42368 , H01L29/66666 , H01L29/7803 , H01L29/7813 , H01L29/7827 , H02M3/1588 , Y02B70/1466
摘要： A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
摘要翻译：半导体器件包括：第一导电类型的半导体衬底; 设置在所述半导体衬底中的半导体区域; 形成在半导体区域中的第一沟槽; 形成在所述半导体衬底中的第二沟槽; 设置在所述第一沟槽中的沟槽栅电极; 以及设置在第二沟槽中的沟槽源电极。沟槽源电极的形状像条纹，并通过其纵向部分连接到源电极。

37. 发明申请

US20090146209A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090146209A1
公开(公告)日：2009-06-11
申请号：US12332260
申请日：2008-12-10
申请人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Miwako Akiyama , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0634 , H01L29/0869 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/66727 , H01L29/66734
摘要： A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type provided on a main surface of the first semiconductor layer and having a lower impurity concentration than that of the first semiconductor layer; a third semiconductor layer of a second conductivity type provided on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type selectively provided on the third semiconductor layer; a gate electrode provided in a trench passing through the third semiconductor layer and reaching the second semiconductor layer; a first main electrode contacting the fourth semiconductor layer and contacting the third semiconductor layer through a contact groove provided to pass through the fourth semiconductor layer between the contiguous gate electrodes; a second main electrode provided on an opposite surface to the main surface of the first semiconductor layer; and a fifth semiconductor layer of the second conductivity type provided in an interior portion of the second semiconductor layer corresponding to a part under the contact groove. An uppermost portion of the fifth semiconductor layer contacts the third semiconductor layer, a lowermost portion of the fifth semiconductor layer has a higher impurity concentration than that of the other portion in the fifth semiconductor layer and is located in the second semiconductor layer and not contacting the first semiconductor layer, and the fifth semiconductor layer is narrower from the uppermost portion to the lower most portion.
摘要翻译：半导体器件包括：第一导电类型的第一半导体层; 第一导电类型的第二半导体层设置在第一半导体层的主表面上并且具有比第一半导体层的杂质浓度低的第二半导体层; 设置在第二半导体层上的第二导电类型的第三半导体层; 选择性地设置在第三半导体层上的第一导电类型的第四半导体层; 设置在穿过所述第三半导体层并到达所述第二半导体层的沟槽中的栅电极; 与所述第四半导体层接触的第一主电极，并且通过设置成在所述连续的栅电极之间穿过所述第四半导体层的接触槽使所述第三半导体层接触; 设置在与所述第一半导体层的主表面相反的表面上的第二主电极; 以及第二导电类型的第五半导体层，设置在与所述接触槽下方的部分对应的所述第二半导体层的内部。第五半导体层的最上部与第三半导体层接触，第五半导体层的最下部分的杂质浓度比第五半导体层中的其他部分杂质浓度高，位于第二半导体层中，第一半导体层，第五半导体层从最上部到最下部较窄。

38. 发明授权

US08987912B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08987912B2
公开(公告)日：2015-03-24
申请号：US13020235
申请日：2011-02-03
申请人： Yoshihiro Yamaguchi
发明人： Yoshihiro Yamaguchi
IPC分类号： H01L23/02 , H01L23/52 , H01L23/48 , H01L23/10 , H01L23/34 , H01L29/40 , H01L23/31 , H01L23/373 , H01L23/433 , H01L23/495 , H01L23/498 , H01L23/00
CPC分类号： H01L23/3107 , H01L23/3735 , H01L23/4334 , H01L23/49531 , H01L23/49811 , H01L24/01 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/72 , H01L24/73 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49109 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/1815 , H01L2924/19107 , H01L2924/00014 , H01L2924/00 , H01L2924/3512 , H01L2924/00012
摘要： A semiconductor device includes a substrate having a conductor; a semiconductor chip disposed on the substrate and electrically connected to the conductor; a tubular electrode having one end electrically connected to the conductor; and a sealing resin sealing the substrate, the semiconductor chip and the electrode. The electrode is configured to be extendable and contractible in the stacking direction in which the substrate and the semiconductor chip are stacked in the state before sealing of the sealing resin. The edge of the other end of the electrode is exposed from the sealing resin. The electrode has a hollow space opened at the edge of the other end. Therefore, a semiconductor device reduced in size and a method of manufacturing this semiconductor device can be provided.
摘要翻译：半导体器件包括具有导体的衬底; 半导体芯片，其设置在所述基板上并电连接到所述导体; 管状电极，其一端电连接到导体; 以及将基板，半导体芯片和电极密封的密封树脂。电极被配置为在密封树脂密封之前的状态下层叠基板和半导体芯片的堆叠方向上可伸缩。电极另一端的边缘从密封树脂露出。电极具有在另一端的边缘处开口的中空空间。因此，可以提供尺寸减小的半导体器件和制造该半导体器件的方法。

39. 发明授权

US08976193B2 Information processing apparatus, information processing method, and computer program 有权
标题翻译：信息处理装置，信息处理方法和计算机程序
公开(公告)号：US08976193B2
公开(公告)日：2015-03-10
申请号：US11754582
申请日：2007-05-29
申请人： Hiroki Takakura , Shiro Miyagi , Yoshihiro Yamaguchi
发明人： Hiroki Takakura , Shiro Miyagi , Yoshihiro Yamaguchi
IPC分类号： G09G5/00 , G06F17/30 , G06F3/0481
CPC分类号： G06F17/30265 , G06F3/0481
摘要： An information processing apparatus that executes information display processing is disclosed. The apparatus includes: a display unit that executes information display; and a data processing unit that executes a control of the information display of the display unit and data processing based on a user input. The data processing unit displays an image browsing screen, which corresponds to image data stored in a storage unit, on the display unit and executes display of a map at the position, which corresponds to position information included in attribute information of a selected image, on the basis of a user's input of image selection information and map display request.
摘要翻译：公开了执行信息显示处理的信息处理装置。该装置包括：执行信息显示的显示单元; 以及数据处理单元，其执行对显示单元的信息显示的控制和基于用户输入的数据处理。该数据处理单元将与存储在存储单元中的图像数据相对应的图像浏览屏幕显示在显示单元上，并且在与所选择的图像的属性信息中包括的位置信息对应的位置上执行地图的显示，用户输入图像选择信息和地图显示请求的基础。

40. 发明授权

US08729421B2 Thermal cutting machine and thermal cutting method 有权
标题翻译：热切割机和热切割方法
公开(公告)号：US08729421B2
公开(公告)日：2014-05-20
申请号：US11629283
申请日：2005-06-02
申请人： Satoshi Ohnishi , Yoshihiro Yamaguchi
发明人： Satoshi Ohnishi , Yoshihiro Yamaguchi
IPC分类号： B23K9/02
CPC分类号： B23K37/0408 , B23K7/002 , B23K10/00 , B23K26/0884 , B23K26/16 , B23K26/38 , B23K26/702 , B23K37/0461 , B23K2101/18
摘要： A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.
摘要翻译：具有用于放置板14的大量支撑器的格子托盘13被安装到桌子12上，以便可自由地装配和拆卸。通过用起重机提升格子托盘13的方法来进行板14的进入，该起重机已将板14已经装载在不同位置的格子托盘13上，将它们运送到工作台12上，并将它们下降到桌子12.切割完成之后，格子托盘12被升起并与工作台12分离，制成品并将剩下的材料运送到其上并被带走到不同的位置，另一个格子托盘13具有安装在其上的另一个板14与起重机一起被放置在工作台12上，并且开始切割另一个板14的任务。

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