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31. 发明申请

US20120274879A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120274879A1
公开(公告)日：2012-11-01
申请号：US13542693
申请日：2012-07-06
申请人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
发明人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
IPC分类号： G02F1/13357 , G09F13/04
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译：本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

32. 发明申请

US20120273779A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120273779A1
公开(公告)日：2012-11-01
申请号：US13546345
申请日：2012-07-11
申请人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
发明人： Shunpei YAMAZAKI , Hidekazu MIYAIRI , Kengo AKIMOTO , Kojiro SHIRAISHI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/016 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/15 , H01L27/3225 , H01L27/3241 , H01L27/3248 , H01L27/3258 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/786 , H01L29/78618
摘要： In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.
摘要翻译：在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

33. 发明申请

US20120256178A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256178A1
公开(公告)日：2012-10-11
申请号：US13426641
申请日：2012-03-22
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/36 , H01L29/24 , H01L29/22
CPC分类号： H01L29/7869 , H01L29/78603
摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film.
摘要翻译：提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。半导体器件包括晶体管。晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和漏电极。基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第二氧化物绝缘膜的上方。

34. 发明申请

US20120256177A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256177A1
公开(公告)日：2012-10-11
申请号：US13426640
申请日：2012-03-22
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L29/66772
摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film.
摘要翻译：提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。半导体器件包括晶体管。晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和漏电极。基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第一氧化物绝缘膜的上方。

35. 发明申请

US20120252160A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120252160A1
公开(公告)日：2012-10-04
申请号：US13429977
申请日：2012-03-26
申请人： Shunpei YAMAZAKI
发明人： Shunpei YAMAZAKI
IPC分类号： H01L21/44
CPC分类号： H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.
摘要翻译：在制造包括氧化物半导体层的晶体管的方法中，形成栅电极，然后将氧化铝膜，氧化硅膜和氧化物半导体膜依次形成在直列式装置中而不暴露于空气中并对在线装置进行加热和氧气添加处理。然后，晶体管被另一个氧化铝膜覆盖，并进行热处理，从而除去包括氢原子的杂质的氧化物半导体膜，并且包括含有超过化学计量组成比的氧的区域。包括氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置温度应力（BT测试）可以减小晶体管的阈值电压的变化量。

36. 发明申请

US20120248470A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120248470A1
公开(公告)日：2012-10-04
申请号：US13486017
申请日：2012-06-01
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
IPC分类号： H01L33/08
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译：本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。布线等形成为与绝缘层接触，从而增强布线等的覆盖。此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

37. 发明申请

US20120231581A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120231581A1
公开(公告)日：2012-09-13
申请号：US13413686
申请日：2012-03-07
申请人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
发明人： Shunpei YAMAZAKI , Yuhei SATO , Keiji SATO , Tetsunori MARUYAMA
IPC分类号： H01L21/36
CPC分类号： H01L29/78693
摘要： In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.
摘要翻译：在制造包括氧化物半导体层的晶体管的工艺中，在氧化硅膜上形成包含与结晶态的氧化物半导体的化学计量组成比相比含有过量氧的区域的非晶氧化物半导体层，铝在非晶形氧化物半导体层上形成氧化膜，然后进行热处理，使得非晶氧化物半导体层的至少一部分结晶，并且包含具有c轴的晶体的氧化物半导体层，该晶体基本上垂直于形成氧化物半导体层。

38. 发明申请

US20120217515A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120217515A1
公开(公告)日：2012-08-30
申请号：US13397058
申请日：2012-02-15
申请人： Shunpei YAMAZAKI , Takayuki IKEDA , Takeshi AOKI , Munehiro KOZUMA , Takashi NAKAGAWA
发明人： Shunpei YAMAZAKI , Takayuki IKEDA , Takeshi AOKI , Munehiro KOZUMA , Takashi NAKAGAWA
IPC分类号： H01L33/08
CPC分类号： H01L27/3262 , H01L27/1225 , H01L27/1266 , H01L27/322
摘要： A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor.
摘要翻译：显示装置包括像素区域，包括排列成矩阵并具有350ppi以上的水平分辨率的像素和与像素区域重叠的滤色器层的像素。像素各自包括第一晶体管，栅极电连接到扫描线并且其源极和漏极中的一个电连接到信号线; 第二晶体管，其栅极电连接到第一晶体管的源极和漏极中的另一个，并且源极和漏极中的一个电连接到电流线; 以及电连接到第二晶体管的源极和漏极中的另一个的发光元件。第一和第二晶体管各自具有包括单晶半导体的沟道形成区域。

39. 发明申请

US20120214276A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120214276A1
公开(公告)日：2012-08-23
申请号：US13455425
申请日：2012-04-25
申请人： Yoshiaki OIKAWA , Hotaka MARUYAMA , Hiromichi GODO , Daisuke KAWAE , Shunpei YAMAZAKI
发明人： Yoshiaki OIKAWA , Hotaka MARUYAMA , Hiromichi GODO , Daisuke KAWAE , Shunpei YAMAZAKI
IPC分类号： H01L21/363
CPC分类号： H01L27/1225 , G02F1/1368 , G02F2201/121 , G02F2201/123 , H01L21/02565 , H01L21/02631 , H01L27/1214 , H01L27/124 , H01L27/156 , H01L27/3248 , H01L27/3262 , H01L29/24 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.
摘要翻译：本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区层和包含SiOX的In-Sn-O系氧化物半导体层。使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

40. 发明申请

US20120211874A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120211874A1
公开(公告)日：2012-08-23
申请号：US13461249
申请日：2012-05-01
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
IPC分类号： H01L29/02
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

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