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1. 发明申请

US20120274879A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120274879A1
公开(公告)日：2012-11-01
申请号：US13542693
申请日：2012-07-06
申请人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
发明人： Yasuhiro JINBO , Masafumi MORISUE , Hajime KIMURA , Shunpei YAMAZAKI
IPC分类号： G02F1/13357 , G09F13/04
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译：本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

2. 发明申请

US20120182598A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120182598A1
公开(公告)日：2012-07-19
申请号：US13431073
申请日：2012-03-27
申请人： Masafumi MORISUE , Yasuhiro JINBO , Gen FUJII , Hajime KIMURA
发明人： Masafumi MORISUE , Yasuhiro JINBO , Gen FUJII , Hajime KIMURA
IPC分类号： G02F1/167
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133345 , G02F1/133711 , G02F1/133734 , G02F1/133784 , G02F1/13394 , G02F1/167 , H01L27/1214 , H01L27/1218 , H01L27/3244 , H01L27/3272 , H01L29/78603 , H01L29/78633 , H01L31/0392 , H01L31/03925 , H01L31/03926 , H01L31/1896 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
摘要翻译：一种制造半导体器件的方法包括：在具有透光性的基板上形成光催化层和与光催化层接触的有机化合物层; 在所述光催化层和所述有机化合物层之间与所述光催化层接触的具有透光性的基板上形成元件形成层; 并且在通过具有透光性的基板用光照射光催化层之后，将元件形成层与具有透光性的基板分离。

3. 发明申请

US20070190675A1 MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20070190675A1
公开(公告)日：2007-08-16
申请号：US11671742
申请日：2007-02-06
申请人： Shunpei YAMAZAKI , Shinobu FURUKAWA , Masafumi MORISUE , Gen FUJII
发明人： Shunpei YAMAZAKI , Shinobu FURUKAWA , Masafumi MORISUE , Gen FUJII
IPC分类号： H01L21/00
CPC分类号： H01J9/2275 , G09G3/30 , G09G2300/0426
摘要： A highly functional and reliable display device with lower power consumption and higher light-emitting efficiency is provided. A light-emitting material is irradiated with light; the light-emitting material irradiated with light is dispersed in a solution containing a binder, and a solution containing the light-emitting material irradiated with light and the binder is formed; a first electrode layer is formed; the solution is applied on the first electrode layer, and a light-emitting layer containing the light-emitting material irradiated with light and the binder is formed; and a second electrode layer is formed over the light-emitting layer, and a light-emitting element is manufactured. An insulating layer may be provided between the first electrode layer and the light-emitting layer or between the second electrode layer and the light-emitting layer.
摘要翻译：提供了具有较低功耗和较高发光效率的高功能可靠的显示装置。用光照射发光材料; 用光照射的发光材料分散在含有粘合剂的溶液中，形成含有照射光的发光材料和粘合剂的溶液; 形成第一电极层; 将溶液施加在第一电极层上，形成含有照射光的发光材料和粘合剂的发光层; 并且在发光层上形成第二电极层，并且制造发光元件。可以在第一电极层和发光层之间或第二电极层和发光层之间设置绝缘层。

4. 发明申请

US20130001560A1 SUBSTRATE HAVING FILM PATTERN AND MANUFACTURING METHOD OF THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION 有权
公开(公告)号：US20130001560A1
公开(公告)日：2013-01-03
申请号：US13612146
申请日：2012-09-12
申请人： Shinji MAEKAWA , Gen FUJII , Hiroko SHIROGUCHI , Masafumi MORISUE
发明人： Shinji MAEKAWA , Gen FUJII , Hiroko SHIROGUCHI , Masafumi MORISUE
IPC分类号： H01L29/786
CPC分类号： G02B5/201 , G03F7/0007 , H01L27/1285 , H01L27/1292 , H01L27/3281 , H01L27/3295 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

5. 发明申请

US20080090341A1 METHOD FOR MANUFACTURING DISPLAY DEVICE, AND ETCHING APPARATUS 有权
标题翻译：制造显示装置的方法和蚀刻装置
公开(公告)号：US20080090341A1
公开(公告)日：2008-04-17
申请号：US11870530
申请日：2007-10-11
申请人： Koichiro TANAKA , Masafumi MORISUE
发明人： Koichiro TANAKA , Masafumi MORISUE
IPC分类号： H01L21/336 , H01L21/306 , H01L21/4763
CPC分类号： G02F1/136227 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32135 , H01L21/6708 , H01L21/76802 , H01L21/76804 , H01L21/76816 , H01L21/76817 , H01L27/124 , H01L27/1248 , H01L29/66765 , Y02P80/30
摘要： A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is selectively removed to form an opening in the insulating layer. Therefore, the insulating layer provided with the opening is formed over a first conductive layer, and the first conductive layer below the insulating layer is exposed at the bottom of the opening. A second conductive layer is formed in the opening to be in contact with an exposed part of the first conductive layer, so that the first conductive layer and the second conductive layer are electrically connected in the opening provided in the insulating layer.
摘要翻译：管被布置成与开口形成区域中的绝缘层接触，并且处理剂（蚀刻气体或蚀刻剂）通过管被排出到绝缘层。使用排出的处理剂（蚀刻气体或蚀刻剂），绝缘层被选择性地去除以在绝缘层中形成开口。因此，设置有开口的绝缘层形成在第一导电层上，并且绝缘层下方的第一导电层在开口的底部露出。第二导电层形成在开口中以与第一导电层的暴露部分接触，使得第一导电层和第二导电层在设置在绝缘层中的开口中电连接。

6. 发明申请

US20070004233A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20070004233A1
公开(公告)日：2007-01-04
申请号：US11425559
申请日：2006-06-21
申请人： Masafumi MORISUE , Ryosuke WATANABE , Junya MARUYAMA , Daiki YAMADA
发明人： Masafumi MORISUE , Ryosuke WATANABE , Junya MARUYAMA , Daiki YAMADA
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/13 , H01L31/18 , Y10S438/94
摘要： A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light is irradiated to sections of a rear surface side of the substrate. By irradiating the second layer with laser light, the state of being covered with the organic resin film can be maintained at the same time as forming a space under the organic resin film by ablating (alternatively, evaporating or breaking down) an irradiated region of the second layer, to cause a lift in the film in a periphery thereof.
摘要翻译：在基板上形成第一层（绝缘层），第二层（金属层）和第三层（绝缘层）。然后，在第三层上形成包括半导体元件的第四层。在涂覆覆盖第四层的有机树脂膜之后，激光照射到基板的后表面侧的部分。通过用激光照射第二层，可以在与有机树脂膜之间形成空间的同时通过烧蚀（或者，蒸发或分解）有机树脂膜的照射区域同时保持有机树脂膜被覆盖的状态。第二层，以在其周围引起膜的提升。

7. 发明申请

US20100219413A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
标题翻译：用于制造半导体器件的方法和用于制造显示器件的方法
公开(公告)号：US20100219413A1
公开(公告)日：2010-09-02
申请号：US12777580
申请日：2010-05-11
申请人： Masafumi MORISUE , Koichiro TANAKA
发明人： Masafumi MORISUE , Koichiro TANAKA
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L27/124 , G02F1/1362 , H01L27/1248 , H01L27/1285 , H01L27/1292 , Y02P80/30
摘要： An object is to provide a method for manufacturing a highly-reliable semiconductor device with an improved material use efficiency and with a simplified manufacturing process. The method includes the steps of forming a conductive layer over a substrate, forming a light-transmitting layer over the conductive layer, and selectively removing the conductive layer and the light-transmitting layer by irradiation with a femtosecond laser beam from above the light-transmitting layer. Note that the conductive layer and the light-transmitting layer may be removed so that an end portion of the light-transmitting layer is located on an inner side than an end portion of the conductive layer. Before the irradiation with a femtosecond laser beam, a surface of the light-transmitting layer may be subjected to liquid-repellent treatment.
摘要翻译：本发明的目的是提供一种用于制造具有改善的材料使用效率和简化制造工艺的高可靠性半导体器件的方法。该方法包括以下步骤：在衬底上形成导电层，在导电层上形成透光层，并通过从透光层上方的飞秒激光束照射选择性地去除导电层和透光层; 层。注意，可以去除导电层和透光层，使得透光层的端部位于比导电层的端部的内侧。在用飞秒激光束照射之前，透光层的表面可以进行拒水处理。

8. 发明申请

US20090291552A1 SUBSTRATE HAVING FILM PATTERN AND MANUFACTURING METHOD OF THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION 有权
标题翻译：具有薄膜图案的基板及其制造方法，半导体器件的制造方法，液晶电视和电视
公开(公告)号：US20090291552A1
公开(公告)日：2009-11-26
申请号：US12537005
申请日：2009-08-06
申请人： Shinji MAEKAWA , Gen FUJII , Hiroko SHIROGUCHI , Masafumi MORISUE
发明人： Shinji MAEKAWA , Gen FUJII , Hiroko SHIROGUCHI , Masafumi MORISUE
IPC分类号： H01L21/28 , H01L21/288
CPC分类号： G02B5/201 , G03F7/0007 , H01L27/1285 , H01L27/1292 , H01L27/3281 , H01L27/3295 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.
摘要翻译：本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法，产量。根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板形成。

9. 发明申请

US20090075476A1 MANUFACTURING METHOD OF SUBSTRATE HAVING CONDUCTIVE LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：具有导电层的基板的制造方法和半导体器件的制造方法
公开(公告)号：US20090075476A1
公开(公告)日：2009-03-19
申请号：US12268039
申请日：2008-11-10
申请人： Gen FUJII , Masafumi MORISUE , Hironobu SHOJI , Junya MARUYAMA , Kouji DAIRIKI , Tomoyuki AOKI
发明人： Gen FUJII , Masafumi MORISUE , Hironobu SHOJI , Junya MARUYAMA , Kouji DAIRIKI , Tomoyuki AOKI
IPC分类号： H01L21/44
CPC分类号： H01L27/12 , H01L23/48 , H01L23/5227 , H01L24/11 , H01L27/0629 , H01L27/1266 , H01L27/1292 , H01L27/13 , H01L28/10 , H01L29/78621 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2924/00014 , H01L2924/07811 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要翻译：具有导电层的基板的制造方法具有以下步骤：在基板上形成无机绝缘层; 在无机绝缘层上形成具有所需形状的有机树脂层; 在无机绝缘层的第一暴露部分上相对于含有导电颗粒的组合物形成低润湿性层; 去除有机树脂层; 并用含有导电颗粒的组合物涂覆无机绝缘层的第二暴露部分并进行烘烤，由此形成导电层。

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