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31. 发明授权

US5788718A Apparatus and a method for growing a single crystal 失效
标题翻译：用于生长单晶的装置和方法
公开(公告)号：US5788718A
公开(公告)日：1998-08-04
申请号：US777731
申请日：1996-12-20
申请人： Hirotoshi Yamagishi , Kiyotaka Takano , Eiichi Iino , Masanori Kimura
发明人： Hirotoshi Yamagishi , Kiyotaka Takano , Eiichi Iino , Masanori Kimura
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06 , C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus for growing a single crystal which comprises a quartz crucible in a chamber for containing a semiconductor melt from which a semiconductor single crystal rod is pulled, wherein there further comprises a cylinder concentrically surrounding the single crystal rod to be pulled whose top is connected to the edge of the opening at the center of the ceiling of the chamber in an airtight fashion and whose bottom hangs down toward the semiconductor melt, and a collar which spreads open upward and outward and whose outer circumferential part extends above the top end of the quartz crucible wherein the outer circumferential part is situated such that it does not touch the top end of the quartz crucible when said quartz crucible is at its highest position.
摘要翻译：一种用于生长单晶的装置，其包括在用于容纳半导体单晶棒的半导体熔体的室中的石英坩埚，所述半导体熔融体从其拉出半导体单晶棒，其中还包括圆筒同心地围绕待拉的单晶棒，其顶部连接到开口的边缘以气密的方式在室的顶部的中心处，并且其底部朝向半导体熔体向下延伸;以及轴环，其向上和向外敞开并且其外周部分在石英的顶端之上延伸坩埚，其中外圆周部分被定位成使得当所述石英坩埚处于其最高位置时，其不接触石英坩埚的顶端。

32. 发明授权

US5728211A Silicon single crystal with low defect density and method of producing same 失效
标题翻译：具有低缺陷密度的硅单晶及其制造方法
公开(公告)号：US5728211A
公开(公告)日：1998-03-17
申请号：US660198
申请日：1996-06-03
申请人： Kiyotaka Takano , Kouji Kitagawa , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi , Masahiro Sakurada
发明人： Kiyotaka Takano , Kouji Kitagawa , Eiichi Iino , Masanori Kimura , Hirotoshi Yamagishi , Masahiro Sakurada
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , C30B33/02 , H01L21/208
CPC分类号： C30B29/06 , C30B15/206
摘要： A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing crystal for a first temperature range of the melting point to 1,200.degree. C. so as to be 190 min. or shorter and adjusting a second passage time thereof for a second temperature range of 1,150.degree. C. to 1,080.degree. C. so as to be 60 min. or longer during crystal growth.
摘要翻译：具有低缺陷的硅单晶，例如流动图案缺陷和激光散射断层摄影缺陷，以及氧化物中的高介电击穿强度，以及使用切克劳斯基法生产该方法的方法，包括以下步骤：调节生长晶体的第一通过时间熔点为1200℃的第一温度范围为190分钟。或更短，并将第二通过时间调节为1150℃至1080℃的第二温度范围，以使其为60分钟。或更长时间。

33. 发明授权

US5550354A High-frequency induction heating coil 失效
标题翻译：高频感应加热线圈
公开(公告)号：US5550354A
公开(公告)日：1996-08-27
申请号：US456102
申请日：1995-05-30
申请人： Masanori Kimura , Hirotoshi Yamagishi
发明人： Masanori Kimura , Hirotoshi Yamagishi
IPC分类号： C30B13/20 , H05B6/30 , H05B6/36 , H05B6/40
CPC分类号： H05B6/362 , H05B6/30
摘要： A high-frequency induction heating coil is provided which enables a semiconductor single crystal in the process of growth to incorporate impurities uniformly therein, permits ready adjustment of the heat distributing property, and precludes the discharge of electricity across a slit. The high-frequency induction heating coil comprises a pair of annular conductors 21 and 22, a pair of power source terminals 23a and 23b for feeding a high-frequency electric current to the pair of annular conductors 21 and 22, and a plurality of small coils 24a through 24f and 25a through 25f having the pair of annular conductors as opposite electrodes and projecting toward the axis of the pair of annular conductors extending from a first annular conductor 21 to a second annular conductor 22.
摘要翻译：提供了一种高频感应加热线圈，其使得在生长过程中的半导体单晶能够均匀地掺入杂质，从而允许准备好调节热分布特性，并且排除跨越狭缝的电力放电。高频感应加热线圈包括一对环形导体21和22，一对用于将高频电流馈送到一对环形导体21和22的电源端子23a和23b，以及多个小线圈 24a至24f和25a至25f，其具有作为相对电极的一对环形导体，并且朝向从第一环形导体21延伸到第二环形导体22的一对环形导体的轴线突出。

34. 发明授权

US5386796A Method for testing quality of silicon wafer 失效
标题翻译：测试硅片质量的方法
公开(公告)号：US5386796A
公开(公告)日：1995-02-07
申请号：US850916
申请日：1992-03-13
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： C30B33/10 , C30B29/06 , C30B33/00 , C30B15/00
CPC分类号： C30B29/06 , C30B33/00
摘要： Quick and inexpensive determination of an aggregate of point defects in a grown silicon semiconductor single crystal bar is accomplished by a method which comprises cutting a wafer from a freshly grown silicon single crystal bar, etching the surface of this wafer with the mixture of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, treating the wafer with the mixture of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water thereby giving rise to pits 2 and ripple patterns 1 therein, determining the density of the pits 2 and that of the ripple patterns 1, and rating the aggregate of point defects by virtue of the correlation between the densities of the pits 1 and the ripple patterns 1 and the aggregate of point defects.
摘要翻译：在生长的硅半导体单晶棒中快速且廉价地测定点缺陷的集合是通过一种方法实现的，该方法包括从新生成的硅单晶棒切割晶片，用氢氟酸和硝酸，从而减轻晶片的应变，用K2Cr2O7，氢氟酸和水的混合物处理晶片，从而在其中产生凹坑2和波纹图案1，确定凹坑2的密度和波纹图案1的密度，并且通过凹坑1的密度与波纹图案1和点缺陷的总和之间的相关性对点缺陷的总和进行评级。

35. 发明授权

US5340434A Process for producing silicon single crystal 失效
标题翻译：硅单晶生产工艺
公开(公告)号：US5340434A
公开(公告)日：1994-08-23
申请号：US11744
申请日：1993-02-01
申请人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Kiyotaka Takano , Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/02 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00
摘要： A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hydrogen in the grains of silicon polycrystal is more than 10 ppmwt and less than 100 ppmwt. The process prevents the silicon single crystal from being polycrystalline.
摘要翻译：公开了一种制造硅单晶的方法，其包括以下步骤：在坩埚中提供硅熔体，将硅多晶硅晶粒提供给硅熔体，并从硅熔体中提取硅单晶。硅多晶体颗粒中的残留氢浓度大于10ppmwt且小于100ppmwt。该方法防止硅单晶多晶。

36. 发明授权

US5306387A Method for pulling up semiconductor single crystal 失效
标题翻译：提高半导体单晶的方法
公开(公告)号：US5306387A
公开(公告)日：1994-04-26
申请号：US713848
申请日：1991-06-12
申请人： Izumi Fusegawa , Hirotoshi Yamagishi
发明人： Izumi Fusegawa , Hirotoshi Yamagishi
IPC分类号： C30B15/20 , C30B15/00 , C30B15/30 , C30B30/04 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/305
摘要： A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the rotational speed of said quartz crucible at a level exceeding 5 rpm and varying the intensity of said magnetic field applied to said molten semiconductor according to the length of pull of said single crystal rod.
摘要翻译：通过在施加磁场的情况下拉起保持在石英玻璃坩埚中的半导体熔体的方法，通过在保持在石英玻璃坩埚中的半导体熔体的方法来产生沿长度方向具有受控氧浓度分布的半导体单晶棒，该方法的特征在于固定所述石英坩埚的水平超过5rpm，并根据所述单晶棒的拉伸长度改变施加到所述熔融半导体的所述磁场的强度。

37. 发明授权

US5262338A Method for fabrication of semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5262338A
公开(公告)日：1993-11-16
申请号：US850506
申请日：1992-03-13
申请人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
发明人： Izumi Fusegawa , Hirotoshi Yamagishi , Nobuyoshi Fujimaki , Yukio Karasawa
IPC分类号： H01L21/02 , H01L21/28 , H01L21/322 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28211 , H01L21/3225
摘要： A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.

38. 发明授权

US5258092A Method of growing silicon monocrystalline rod 失效
标题翻译：生长硅单晶棒的方法
公开(公告)号：US5258092A
公开(公告)日：1993-11-02
申请号：US855978
申请日：1992-03-23
申请人： Hirotoshi Yamagishi , Masanori Kimura , Hideo Arai
发明人： Hirotoshi Yamagishi , Masanori Kimura , Hideo Arai
IPC分类号： C30B13/00 , C30B13/26 , C30B29/06
CPC分类号： C30B29/06 , C30B13/26 , Y10S117/917
摘要： The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.

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