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31. 发明授权

US08815717B2 Vapor deposition method and vapor deposition apparatus 有权
标题翻译：气相沉积法和蒸镀装置
公开(公告)号：US08815717B2
公开(公告)日：2014-08-26
申请号：US12875835
申请日：2010-09-03
申请人： Yoshiyuki Harada , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki Harada , Koichi Tachibana , Toshiki Hikosaka , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C23C16/45504 , C23C16/303 , C23C16/45574 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.
摘要翻译：根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层，来自第二出口的原料气体。该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

32. 发明授权

US08441023B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08441023B2
公开(公告)日：2013-05-14
申请号：US13226045
申请日：2011-09-06
申请人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
发明人： Taisuke Sato , Masanobu Ando , Hajime Nago , Koichi Tachibana , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/46
摘要： According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.
摘要翻译：根据一个实施例，在发光器件中，衬底对于发射波长的波长是透明的。第一电介质层形成在基板上的第一区域中，并且折射率小于基板的折射率。在包围第一区域的基板上的第二区域中形成第二电介质层，并且折射率大于基板的折射率。在第一电介质层，第二电介质层和衬底上形成第一半导体层。第二半导体层形成在第一半导体层上，并且包括具有PN结的有源层。

33. 发明申请

US20120299015A1 NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE 有权
标题翻译：氮化物半导体器件和氮化物半导体层生长衬底
公开(公告)号：US20120299015A1
公开(公告)日：2012-11-29
申请号：US13405985
申请日：2012-02-27
申请人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi TACHIBANA , Hisashi Yoshida , Hiroshi Ono , Hajime Nago , Yoshiyuki Harada , Toshiki Hikosaka , Maki Sugai , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/20 , H01L29/04
CPC分类号： H01L33/20 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.
摘要翻译：根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。衬底是单晶。半导体功能层设置在基板的主表面上并且包括氮化物半导体。基板包括设置在主表面中的多个结构体。多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度。

34. 发明申请

US20120132943A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120132943A1
公开(公告)日：2012-05-31
申请号：US13204013
申请日：2011-08-05
申请人： Toshiki HIKOSAKA , Hajime Nago , Koichi Tachibana , Toshihide Ito , Shinya Nunoue
发明人： Toshiki HIKOSAKA , Hajime Nago , Koichi Tachibana , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/58
CPC分类号： H01L33/22 , H01L33/325 , H01L33/40
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

35. 发明申请

US20120056157A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056157A1
公开(公告)日：2012-03-08
申请号：US13222500
申请日：2011-08-31
申请人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。阻挡层中的至少一个包括第一和第二部分层。第一部分层设置在n型层的一侧。第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。阱层中的至少一个包括第三和第四部分层。第三部分层设置在n型层的一侧。第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

36. 发明授权

US08004004B2 Semiconductor light emitting element, method for manufacturing the same, and light emitting device 有权
公开(公告)号：US08004004B2
公开(公告)日：2011-08-23
申请号：US12955620
申请日：2010-11-29
申请人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
发明人： Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , F21K9/00 , H01L27/156 , H01L33/16 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05639 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/16 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2924/00012 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

37. 发明授权

US07683390B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07683390B2
公开(公告)日：2010-03-23
申请号：US12036409
申请日：2008-02-25
申请人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L29/22
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

38. 发明申请

US20080179623A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
标题翻译：半导体发光元件
公开(公告)号：US20080179623A1
公开(公告)日：2008-07-31
申请号：US11850404
申请日：2007-09-05
申请人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
发明人： Koichi TACHIBANA , Hajime Nago , Shinji Saito , Shinya Nunoue , Genichi Hatakoshi
IPC分类号： H01L29/24
CPC分类号： H01L33/32 , H01L33/02 , H01L33/16
摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.
摘要翻译：半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

39. 发明授权

US08835950B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08835950B2
公开(公告)日：2014-09-16
申请号：US13398170
申请日：2012-02-16
申请人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
发明人： Koichi Tachibana , Chie Hongo , Hajime Nago , Shinya Nunoue
IPC分类号： H01L29/22 , H01L33/02 , H01L33/26 , H01L33/30 , H01L33/32 , H01L33/00 , B82Y20/00 , H01S5/32 , H01S5/30 , H01S5/20 , H01S5/22 , H01S5/343
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/02 , H01L33/305 , H01S5/2009 , H01S5/22 , H01S5/2224 , H01S5/3063 , H01S5/3072 , H01S5/3216 , H01S5/34333 , H01S2304/04 , Y10S257/918
摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.
摘要翻译：半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出，第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

40. 发明授权

US08525197B2 Semiconductor light emitting device and method for manufacturing same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08525197B2
公开(公告)日：2013-09-03
申请号：US13035304
申请日：2011-02-25
申请人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Yoshiyuki Harada , Toshiki Hikosaka , Tomonari Shioda , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L31/072
CPC分类号： H01L33/08 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/06
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
摘要翻译：根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。发光部分包括多个发光层。每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。每个阱层区域具有常见的An In组成比。每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

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