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31. 发明授权

US07101753B2 Method for manufacturing a semiconductor device and method for forming high-dielectric-constant film 失效
标题翻译：用于制造半导体器件的方法和用于形成高介电常数膜的方法
公开(公告)号：US07101753B2
公开(公告)日：2006-09-05
申请号：US10811979
申请日：2004-03-30
申请人： Satoshi Kamiyama , Tsunetoshi Arikado
发明人： Satoshi Kamiyama , Tsunetoshi Arikado
IPC分类号： H01L21/8242
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31608 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
摘要翻译：通过栅极绝缘膜在硅衬底上具有栅电极的半导体器件通过在硅衬底上层叠栅极绝缘膜与形成在氧化硅膜上的氧化硅膜形成，在氧化硅膜上形成Hf硅酸盐膜，形成在Hf硅酸盐膜上的含氮Hf硅酸盐膜，并且含有峰值浓度为1原子％至30原子％范围内的Hf，峰值浓度为10原子％至30原子％的氮。

32. 发明申请

US20060102924A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US20060102924A1
公开(公告)日：2006-05-18
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

33. 发明申请

US20050066885A1 Group III-nitride semiconductor substrate and its manufacturing method 审中-公开
标题翻译： III族氮化物半导体衬底及其制造方法
公开(公告)号：US20050066885A1
公开(公告)日：2005-03-31
申请号：US10500002
申请日：2002-12-26
申请人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Shigeki Ohtani , Jun Suda
发明人： Satoshi Kamiyama , Hiroshi Amano , Isamu Akasaki , Shigeki Ohtani , Jun Suda
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/32 , H01S5/323 , B32B9/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： Disclosed are a group III-nitride semiconductor substrate and a production method therefor. A group III-nitride semiconductor substrate having an element-forming surface with a dislocation density of 107 cm−2 or less in its entirely is formed only two steps. In a first step, a AlGaN-based low-temperature buffer layer is formed on a ZrB2 single crystal base having a defect density of 107 cm−2 or less, at a base temperature allowing the low-temperature buffer layer to be grown or deposited on the ZrB2 single crystal base substantially without creation of any Zr—B—N amorphous nitrided layer. Subsequently, in a second step, an AlGaN-based single crystal film is grown directly on the low-temperature buffer layer. The present invention can fully bring out the properties of the ZrB2 single crystal base having a high potential as a base material capable of lattice marching with group III-nitride semiconductors, so as to achieve a high-quality AlGaN semiconductor layer with an element-forming surface having a low dislocation density, through a fully simplified process.
摘要翻译：公开了III族氮化物半导体衬底及其制造方法。具有位错密度为10 -7 cm -2以下的元素形成表面的III族氮化物半导体衬底完全仅形成两个步骤。在第一步骤中，在基底温度下，在缺陷密度为10 -7 cm -2以下的ZrB2单晶基底上形成AlGaN系低温缓冲层，使得低温缓冲层在ZrB2单晶基底上生长或沉积，基本上不产生任何Zr-BN无定形氮化层。随后，在第二步骤中，直接在低温缓冲层上生长AlGaN基单晶膜。本发明可以充分发挥具有高电位的ZrB2单晶基体作为能够与III族氮化物半导体进行晶格游离的基体材料的性能，从而获得具有元素形成的高质量的AlGaN半导体层表面具有低位错密度，通过完全简化的过程。

34. 发明授权

US06141364A Semiconductor laser device and optical disk apparatus using the same 失效
标题翻译：半导体激光装置及其使用的光盘装置
公开(公告)号：US06141364A
公开(公告)日：2000-10-31
申请号：US348214
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.
摘要翻译：本发明的半导体激光器件包括由n型GaAs制成的衬底201，有源层204以及夹持有源层204的一对覆层。该器件还包括与有源层204相邻的间隔层205 和高掺杂的可饱和吸收层206.通过以高浓度掺杂可饱和吸收层206来缩短载流子寿命，由此可以获得稳定的自持脉动。结果，可以获得在宽的温度范围内具有低的相对噪声强度的半导体激光器件。

35. 发明授权

US6055253A Semiconductor laser device with an optical guide layer 失效
标题翻译：具有导光层的半导体激光器件
公开(公告)号：US6055253A
公开(公告)日：2000-04-25
申请号：US396509
申请日：1995-03-01
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒，并且多量子势垒包括阻挡层和井层相互交替。半导体激光装置还包括限制在量子阱层中产生的光并且光导层未被掺杂的光导层。

36. 发明授权

US5600667A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5600667A
公开(公告)日：1997-02-04
申请号：US223215
申请日：1994-04-05
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒。多量子势垒包括阻挡层和彼此交替的阱层。多量子势垒中的至少一个阻挡层和阱层的厚度，能带隙或杂质浓度随着与有源层的距离而变化，从而提供将从有源层溢出的载流子反射回到活动层。

37. 发明授权

US5486488A Process for manufacturing semiconductor device 失效
标题翻译：半导体器件制造工艺
公开(公告)号：US5486488A
公开(公告)日：1996-01-23
申请号：US347712
申请日：1994-12-01
申请人： Satoshi Kamiyama
发明人： Satoshi Kamiyama
IPC分类号： H01L21/28 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108
CPC分类号： H01L27/10852 , Y10S148/014
摘要： In a conventional method for forming a capacity element for DRAM, a tantalum oxide film is formed on the surface of polycrystal silicon film constituting a capacity lower electrode, and a high temperature treatment is then carried out in an oxygen atmosphere to improve leakage current properties, thereby converting this tantalum oxide film. In the capacity element having the thus formed capacity insulating film, an obtainable capacity value is small. In the present invention, a densification treatment is carried out at a relatively low temperature in place of the high temperature treatment step of the tantalum oxide film, whereby the capacity element having the large capacity value can be formed without deteriorating the leakage current properties.
摘要翻译：在用于形成用于DRAM的电容元件的常规方法中，在构成容量下电极的多晶硅膜的表面上形成氧化钽膜，然后在氧气氛中进行高温处理以改善漏电流特性，从而转化该钽氧化物膜。在具有如此形成的电容绝缘膜的电容元件中，可获得的容量值小。在本发明中，代替氧化钽膜的高温处理工序，在相对较低的温度下进行致密化处理，能够形成具有大容量值的电容元件，而不会使漏电流特性恶化。

38. 发明授权

US5254505A Process of forming capacitive insulating film 失效
标题翻译：形成电容绝缘膜的工艺
公开(公告)号：US5254505A
公开(公告)日：1993-10-19
申请号：US753765
申请日：1991-09-03
申请人： Satoshi Kamiyama
发明人： Satoshi Kamiyama
IPC分类号： H01L27/04 , C23C16/40 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , B05D5/12
CPC分类号： C23C16/405 , H01L21/31604 , H01L28/40
摘要： A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N.sub.2 0) gas, said steps being performed in the same apparatus.

39. 发明授权

US5185755A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5185755A
公开(公告)日：1993-02-09
申请号：US756016
申请日：1991-09-06
申请人： Yoshihiro Mori , Masaya Mannoh , Satoshi Kamiyama , Kiyoshi Ohnaka
发明人： Yoshihiro Mori , Masaya Mannoh , Satoshi Kamiyama , Kiyoshi Ohnaka
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/221 , H01S5/32325
摘要： A semiconductor laser comprising an active waveguide formed of a compound semiconductor comprising a Group V element phosphorous, comprised of an active layer and two cladding layers that hold the active layer between them, and a current confinement structure formed on the active waveguide by the use of a compound semiconductor comprising Group V element arsenic. This semiconductor laser can achieve a small astigmatism, a low threshold current and a low operation current. Also disclosed is a method of fabricating a semiconductor laser having characteristic features that the crystal growth may be carried out only twice, the movement of the impurities in crystals does not easily occur, a regrowth interface with a very little defect can be readily obtained, and the structure wherein the outer cladding layer has a smaller width at its portion nearer to the active waveguide can be naturally formed.
摘要翻译：一种半导体激光器，包括由包括V族元素磷的化合物半导体形成的有源波导，该有源波导包括有源层和在其之间保持有源层的两个包层，以及通过使用在有源波导上形成的电流限制结构包含V族元素砷的化合物半导体。该半导体激光器可以实现小的散光，低阈值电流和低工作电流。还公开了一种制造半导体激光器的方法，该半导体激光器的特征在于晶体生长可以仅进行两次，晶体中的杂质的移动不容易发生，可以容易地获得具有非常小的缺陷的再生界面，并且可以自然地形成外包层在其更靠近有源波导的部分具有较小宽度的结构。

40. 发明授权

US08941136B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08941136B2
公开(公告)日：2015-01-27
申请号：US13394543
申请日：2010-08-23
申请人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
发明人： Satoshi Kamiyama , Motoaki Iwaya , Hiroshi Amano , Isamu Akasaki , Toshiyuki Kondo , Fumiharu Teramae , Tsukasa Kitano , Atsushi Suzuki
IPC分类号： H01L33/00 , H01L33/22 , H01L33/40
CPC分类号： H01L33/10 , H01L33/007 , H01L33/22 , H01L33/405 , H01L2933/0058
摘要： A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.
摘要翻译：半导体发光元件包括：半导体堆叠部，其包括发光层，从发光层射出的光入射的衍射面，形成在比所述发光层的光波长长的时间内形成的凸部或凹部光并且短于光的相干长度，其中衍射面根据布拉格的衍射条件以多模式反射入射光，并根据布拉格的衍射条件将入射光透射到多模中，并且反射面反射多模光在衍射面衍射并使多模光再次入射到衍射面。半导体堆叠部分形成在衍射面上。

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