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31. 发明授权

US07737391B2 Method for independently detecting signals in a double-junction filterless CMOS color imager cell 失效
标题翻译：用于独立检测双结无滤膜CMOS彩色成像器单元中的信号的方法
公开(公告)号：US07737391B2
公开(公告)日：2010-06-15
申请号：US11805003
申请日：2007-05-22
申请人： Sheng Teng Hsu , Jong-Jan Lee
发明人： Sheng Teng Hsu , Jong-Jan Lee
IPC分类号： G01J1/44 , H04N3/14
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14632 , H01L27/14645 , H01L27/14683 , H01L27/14689
摘要： A double-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is fabricated from a silicon-on-insulator (SOI) substrate including a silicon (Si) substrate, a silicon dioxide insulator overlying the substrate, and a Si top layer overlying the insulator. A photodiode set is formed in the SOI substrate, including a first and second photodiode formed as a double-junction structure in the Si substrate. A third photodiode is formed in the Si top layer. A (imager sensing) transistor set is formed in the top Si layer. The transistor set is connected to the photodiode set and detects an independent output signal for each photodiode. The transistor set may be an eight-transistor (8T), a nine-transistor (9T), or an eleven-transistor (11T) cell.
摘要翻译：提供了一种双结互补金属氧化物半导体（CMOS）无滤色彩色成像单元。成像器单元由包括硅（Si）衬底，覆盖衬底的二氧化硅绝缘体和覆盖绝缘体的Si顶层的绝缘体上硅（SOI）衬底制造。在SOI衬底中形成光电二极管组，包括在Si衬底中形成为双结结构的第一和第二光电二极管。在Si顶层中形成第三光电二极管。在顶部Si层中形成A（成像器感测）晶体管组。晶体管组连接到光电二极管组，并检测每个光电二极管的独立输出信号。晶体管组可以是八晶体管（8T），九晶体管（9T）或十一晶体管（11T）单元。

32. 发明申请

US20100090110A1 Ge Imager for Short Wavelength Infrared 有权
标题翻译： Ge成像仪用于短波长红外线
公开(公告)号：US20100090110A1
公开(公告)日：2010-04-15
申请号：US12630893
申请日：2009-12-04
申请人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
发明人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： H01L31/028
CPC分类号： H01L31/1055 , H01L27/14643 , H01L27/14689
摘要： A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
摘要翻译：提供锗（Ge）短波长红外（SWIR）成像器和相关制造工艺。该成像器包括具有掺杂阱的硅（Si）衬底。在位于Si衬底上的松弛的含Ge膜中形成一个pin二极管阵列，每个pin二极管具有倒装芯片接口。存在Ge / Si界面和插入含Ge膜和Ge / Si界面之间的含掺杂Ge的缓冲层。 Si CMOS读出电路阵列结合到倒装芯片接口。每个读出电路都具有零伏二极管偏置接口。

33. 发明申请

US20090194799A1 Dual-pixel Full Color CMOS Imager 有权
标题翻译：双像素全彩CMOS成像仪
公开(公告)号：US20090194799A1
公开(公告)日：2009-08-06
申请号：US12025618
申请日：2008-02-04
申请人： Jong-Jan Lee , Sakae Wada , Sheng Teng Hsu
发明人： Jong-Jan Lee , Sakae Wada , Sheng Teng Hsu
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14647 , H01L27/14689
摘要： A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.
摘要翻译：提供了双像素全色互补金属氧化物半导体（CMOS）成像器，以及相关的制造工艺。两个独立像素用于三色检测。第一像素是单个光电二极管，第二像素具有以堆叠结构内置的两个光电二极管。两个光电二极管堆叠包括n掺杂衬底，底部光电二极管和顶部光电二极管。底部光电二极管具有覆盖衬底的底部p掺杂层和覆盖底部p掺杂层的底部n掺杂层阴极。顶部光电二极管具有覆盖底部n掺杂层的顶部p掺杂层和覆盖顶部p掺杂层的顶部n掺杂层阴极。单个光电二极管包括n掺杂衬底，覆盖衬底的p掺杂层和覆盖p掺杂层的n掺杂层阴极。

34. 发明授权

US07470946B2 Triple-junction filterless CMOS color imager cell 失效
标题翻译：三联无滤膜CMOS彩色成像单元
公开(公告)号：US07470946B2
公开(公告)日：2008-12-30
申请号：US11580407
申请日：2006-10-13
申请人： Sheng Teng Hsu , Jong-Jan Lee
发明人： Sheng Teng Hsu , Jong-Jan Lee
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/14632 , H01L27/14645 , H01L27/14647 , H01L27/14683 , H01L27/14689
摘要： A triple-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cell is provided. The imager cell is made from a bulk silicon (Si) substrate. A photodiode set including a first, second, and third photodiode are formed as a triple-junction structure in the Si substrate. A transistor set is connected to the photodiode set, and detects an independent output signal for each photodiode. Typically, the transistor set is formed in the top surface of the substrate. For example, the Si substrate may be a p-doped Si substrate, and the photodiode triple-junction structure includes the first photodiode forming a pn junction from an n+-doped region at the Si substrate top surface, to an underlying p-doped region. The second photodiode forms a pn junction from the p-doped region to an underlying n-well, and the third photodiode forms a pn junction from the n-well to the underlying p-doped Si substrate.
摘要翻译：提供三结互补金属氧化物半导体（CMOS）无滤色器彩色成像器单元。成像器单元由体硅（Si）衬底制成。在Si衬底中形成包括第一，第二和第三光电二极管的光电二极管组作为三结结构。晶体管组连接到光电二极管组，并检测每个光电二极管的独立输出信号。通常，晶体管组形成在衬底的顶表面中。例如，Si衬底可以是p掺杂的Si衬底，并且光电二极管三结结构包括第一光电二极管，其形成从Si衬底顶表面处的n +掺杂区域到下一个p掺杂区域的pn结。第二光电二极管形成从p掺杂区域到下面的n阱的pn结，并且第三光电二极管形成从n阱到下面的p掺杂Si衬底的pn结。

35. 发明授权

US07459375B2 Transfer method for forming a silicon-on-plastic wafer 失效
标题翻译：用于形成硅塑料晶片的转移方法
公开(公告)号：US07459375B2
公开(公告)日：2008-12-02
申请号：US11891502
申请日：2007-08-10
申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
发明人： Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
IPC分类号： H01L21/44
CPC分类号： H01L21/26506 , H01L21/187 , H01L21/6835 , H01L2221/6835 , H01L2221/68368 , Y10S438/977
摘要： A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
摘要翻译：通过层转移制造硅塑料层的方法包括在硅衬底上沉积SiGe层; 沉积一层硅; 将氢离子注入硅衬底; 将玻璃基板结合到硅层; 分裂晶片; 去除所述硅层和所述SiGe层的一部分; 在玻璃上硅晶片的硅侧沉积电介质; 施加粘合剂并将塑料基板粘合到硅玻璃晶片的硅侧; 从接合的硅玻璃晶片的玻璃面上移除玻璃以形成硅 - 硅晶片; 并在塑料硅胶上完成所需的IC器件。可以通过重复本发明方法的最后几个步骤，根据本发明的方法制造多层结构。

36. 发明授权

US07413939B2 Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit 有权
标题翻译：在绝缘体上生长用于制造CMOS集成电路的锗外延膜的方法
公开(公告)号：US07413939B2
公开(公告)日：2008-08-19
申请号：US11149891
申请日：2005-06-10
申请人： Sheng Teng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet
发明人： Sheng Teng Hsu , Jong-Jan Lee , Jer-Shen Maa , Douglas J. Tweet
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L29/78684
摘要： A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating layer; depositing a layer of polycrystalline germanium on the insulating layer and on at least a portion of the silicon substrate wafer; patterning and etching the polycrystalline germanium; encapsulating the polycrystalline germanium with an insulating material; rapidly thermally annealing the wafer at a temperature sufficient to melt the polycrystalline germanium; cooling the wafer to promote liquid phase epitaxy of the polycrystalline germanium, thereby forming a single crystal germanium layer; and completing the CMOS device.
摘要翻译：制造硅 - 锗CMOS的方法包括制备硅衬底晶片; 在硅衬底晶片上沉积绝缘层; 图案化和蚀刻绝缘层; 在所述绝缘层和所述硅衬底晶片的至少一部分上沉积多晶锗层; 图案化和蚀刻多晶锗; 用绝缘材料封装多晶锗; 在足以熔化多晶锗的温度下快速热退火晶片; 冷却晶片以促进多晶锗的液相外延，从而形成单晶锗层; 并完成CMOS设备。

37. 发明申请

US20080121805A1 Ge short wavelength infrared imager 有权
标题翻译： Ge短波长红外成像仪
公开(公告)号：US20080121805A1
公开(公告)日：2008-05-29
申请号：US11592465
申请日：2006-11-04
申请人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
发明人： Douglas J. Tweet , Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/1055 , H01L27/14643 , H01L27/14689
摘要： A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
摘要翻译：提供锗（Ge）短波长红外（SWIR）成像器和相关制造工艺。该成像器包括具有掺杂阱的硅（Si）衬底。在位于Si衬底上的松弛的含Ge膜中形成一个pin二极管阵列，每个pin二极管具有倒装芯片接口。存在Ge / Si界面和插入含Ge膜和Ge / Si界面之间的含掺杂Ge的缓冲层。 Si CMOS读出电路阵列结合到倒装芯片接口。每个读出电路都具有零伏二极管偏置接口。

38. 发明授权

US07361528B2 Germanium infrared sensor for CMOS imagers 有权
标题翻译：锗红外传感器用于CMOS成像器
公开(公告)号：US07361528B2
公开(公告)日：2008-04-22
申请号：US11069422
申请日：2005-02-28
申请人： Jong-Jan Lee , Jer-Shen Maa , Sheng Teng Hsu , Douglas J. Tweet
发明人： Jong-Jan Lee , Jer-Shen Maa , Sheng Teng Hsu , Douglas J. Tweet
IPC分类号： H01L21/00 , H01L21/8238 , H01L21/46 , H01L21/44
CPC分类号： H01L27/14634 , H01L27/14649 , H01L27/14689 , H01L27/1469 , H01L31/028 , H01L31/103 , H01L31/1804 , H01L31/1808 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a germanium infrared sensor for a CMOS imager includes preparation of a donor wafer, including: ion implantation into a silicon wafer to form a P+ silicon layer; growing an epitaxial germanium layer on the P+silicon layer, forming a silicon-germanium interface; cyclic annealing; and implanting hydrogen ions to a depth at least as deep as the P+ silicon layer to form a defect layer; preparing a handling wafer, including: fabricating a CMOS integrated circuit on a silicon substrate; depositing a layer of refractory metal; treating the surfaces of the donor wafer and the handling wafer for bonding; bonding the handling wafer and the donor wafer to form a bonded structure; splitting the bonded structure along the defect layer; depositing a layer of indium tin oxide on the germanium layer; completing the IR sensor.
摘要翻译：制造用于CMOS成像器的锗红外传感器的方法包括：制备施主晶片，包括：离子注入到硅晶片中以形成P +硅层; 在P +硅层上生长外延锗层，形成硅 - 锗界面; 循环退火; 以及将氢离子注入至少与P +硅层一样深的深度以形成缺陷层; 制备处理晶片，包括：在硅衬底上制造CMOS集成电路; 沉积难熔金属层; 处理供体晶片的表面和用于结合的处理晶片; 结合处理晶片和施主晶片以形成结合结构; 沿着缺陷层分离粘结结构; 在锗层上沉积一层氧化铟锡; 完成IR传感器。

39. 发明授权

US07361526B2 Germanium photo detector having planar surface through germanium epitaxial overgrowth 有权
标题翻译：锗光电检测器具有通过锗外延过度生长的平面
公开(公告)号：US07361526B2
公开(公告)日：2008-04-22
申请号：US11353802
申请日：2006-02-13
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu , Douglas J. Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu , Douglas J. Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate wafer and depositing and planarizing a silicon oxide layer on the silicon substrate. Contact holes are formed in the silicon oxide layer. An N+ epitaxial germanium layer is grown on the silicon oxide layer and in the contact holes. An N+ germanium layer is formed by ELO. The structure is smoothed and thinned. An intrinsic germanium layer is grown on the N+ epitaxial germanium layer. A P+ germanium layer is formed on the intrinsic germanium layer and a silicon oxide overcoat is deposited. A window is opened through the silicon oxide overcoat to the P+ germanium layer. A layer of conductive material is deposited on the silicon oxide overcoat and in the windows therein. The conductive material is etched to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底晶片并在硅衬底上沉积并平面化氧化硅层。在氧化硅层中形成接触孔。在氧化硅层和接触孔中生长N +外延锗层。 N +锗层由ELO形成。结构平滑和变薄。内在锗层生长在N +外延锗层上。在本征锗层上形成P +锗层，并沉积氧化硅外涂层。通过氧化硅外涂层向P +锗层打开窗口。一层导电材料沉积在氧化硅外涂层和其中的窗口中。蚀刻导电材料以形成各个感测元件。

40. 发明授权

US07358107B2 Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer 有权
标题翻译：在高质量锗外延生长层上制造锗光电探测器的方法
公开(公告)号：US07358107B2
公开(公告)日：2008-04-15
申请号：US11260955
申请日：2005-10-27
申请人： Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu , Douglas J. Tweet
发明人： Jer-Shen Maa , Jong-Jan Lee , Sheng Teng Hsu , Douglas J. Tweet
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L21/02532 , H01L21/02576 , H01L21/02647 , H01L31/105 , Y02E10/50
摘要： A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
摘要翻译：制造锗光电检测器的方法包括制备硅衬底; 沉积和平坦化氧化硅层; 在氧化硅层中形成与底层硅衬底连通的接触孔; 在氧化硅层和接触孔中生长第一类型的外延锗层; 在外延锗层和任何暴露的氧化硅层上生长内在的锗层; 在内部锗层和任何暴露的氧化硅层上生长第二类型的锗层; 沉积一层覆盖材料取自由多晶硅，多晶硅 - 锗和In 2 N 3 O 3 -SnO 2 2组成的材料组。并蚀刻覆盖材料以形成单独的感测元件。

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