专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20120244667A1 PRECURSOR COMPOSITION FOR OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：氧化物半导体的前驱体组合物及其制造薄膜晶体管阵列的方法
公开(公告)号：US20120244667A1
公开(公告)日：2012-09-27
申请号：US13195444
申请日：2011-08-01
申请人： Bo Sung KIM , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
发明人： Bo Sung KIM , Doo-Hyoung Lee , Yeon-Taek Jeong , Ki-Beom Lee , Young-Min Kim , Tae-Young Choi , Seon-Pil Jang , Kang-Moon Jo
IPC分类号： H01L21/335 , H01B1/12 , H01L21/20 , C07F17/00
CPC分类号： H01L21/02628 , H01L21/02554 , H01L21/02565
摘要： Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn (Formula 1( Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.
摘要翻译：提供一种用于氧化物半导体的前体组合物。用于氧化物半导体的前体组合物包括由金属离子和有机配体形成的金属络合物，其中前体组合物由下式1表示。MAn（式1（其中M是金属离子，A是包括α-取代的羧酸酯的有机配体，n是自然数。

32. 发明授权

US08013326B2 Organic thin film transistor substrate and method of manufacture 有权
标题翻译：有机薄膜晶体管基板及其制造方法
公开(公告)号：US08013326B2
公开(公告)日：2011-09-06
申请号：US12191849
申请日：2008-08-14
申请人： Tae-Young Choi , Seong-Sik Shin , Bo-Sung Kim
发明人： Tae-Young Choi , Seong-Sik Shin , Bo-Sung Kim
IPC分类号： H01L21/84 , H01L27/28
CPC分类号： H01L27/3262 , H01L27/124 , H01L27/1288 , H01L51/0545
摘要： An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.
摘要翻译：有机薄膜晶体管基板包括形成在基板上的栅极电极，形成在栅电极上的栅极绝缘层，具有源极连接部分和漏极放置槽，源极连接部分中形成的源电极，形成在漏极放置槽中的漏极电极和与栅极绝缘层，源极电极和漏极电极接触的有机半导体层。

33. 发明申请

US20080283833A1 Thin Film Transistor Array Panel and Manufacturing Method Thereof 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20080283833A1
公开(公告)日：2008-11-20
申请号：US10578007
申请日：2005-02-07
申请人： Bo-Sung Kim , Min-Seong Ryu , Yong-Uk Lee , Tae-Young Choi
发明人： Bo-Sung Kim , Min-Seong Ryu , Yong-Uk Lee , Tae-Young Choi
IPC分类号： H01L27/088
CPC分类号： H01L29/4908 , G02F1/136227 , H01L27/12 , H01L27/1248
摘要： The present invention provides a thin film transistor comprising: a substrate (110); a gate electrode (124) formed on the substrate; a gate insulating layer (140) covering the substrate and the gate electrode; a source electrode and a drain electrode (173, 175) formed on the gate insulating layer; a semiconductor layer (150) formed on the gate insulating layer, the source electrode and the drain electrode; and a passivation layer (180) covering the semiconductor layer, the source electrode, the drain electrode and the gate insulating layer, wherein at least one of the gate insulating layer and the passivation layer is made of Parylene.
摘要翻译：本发明提供一种薄膜晶体管，包括：衬底（110）; 形成在所述基板上的栅极电极; 覆盖所述基板和所述栅电极的栅极绝缘层（140）; 形成在所述栅极绝缘层上的源电极和漏电极（173,175）; 形成在所述栅极绝缘层上的半导体层（150），所述源极电极和所述漏极电极; 以及覆盖半导体层，源电极，漏电极和栅极绝缘层的钝化层（180），其中栅极绝缘层和钝化层中的至少一个由帕利灵（Parylene）制成。

34. 发明申请

US20060223222A1 Organic thin film transistor array panel and method of manufacturing the same 审中-公开
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20060223222A1
公开(公告)日：2006-10-05
申请号：US11391939
申请日：2006-03-28
申请人： Tae-Young Choi , Bo-Sung Kim
发明人： Tae-Young Choi , Bo-Sung Kim
IPC分类号： H01L29/08 , H01L51/40 , H01L21/84 , H01L35/24 , H01L21/00 , H01L51/00
CPC分类号： H01L27/283 , H01L27/3272 , H01L27/3274 , H01L51/0036 , H01L51/0078
摘要： An organic thin film transistor array panel comprises a substrate, a data line formed on the substrate, a gate line intersecting the data line on the substrate, said gate line comprising a gate electrode, a gate insulating layer formed on the gate line, said gate insulating layer including a contact hole, a source electrode formed on the gate insulating layer, said source electrode being coupled to the data line through the contact hole, a pixel electrode comprising a drain electrode, said drain electrode being provided opposite the source electrode with a gap, said gap being disposed on the gate electrode, a passivation layer including an opening through which the source electrode and the drain electrode are at least partially exposed, an organic semiconductor formed in the opening, and an overcoat layer formed on the organic semiconductor.
摘要翻译：有机薄膜晶体管阵列面板包括基板，形成在基板上的数据线，与基板上的数据线交叉的栅极线，所述栅极线包括栅电极，形成在栅极线上的栅极绝缘层，所述栅极包括接触孔的绝缘层，形成在栅极绝缘层上的源电极，所述源极通过接触孔耦合到数据线;像素电极，包括漏电极，所述漏电极与源电极相对设置有间隙，所述间隙设置在栅电极上，钝化层包括源电极和漏电极至少部分地暴露的开口，形成在开口中的有机半导体和形成在有机半导体上的外涂层。

35. 发明申请

US20050287719A1 Organic thin film transistor array panel and manufacturing method thereof 审中-公开
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050287719A1
公开(公告)日：2005-12-29
申请号：US11143158
申请日：2005-06-02
申请人： Min-Seong Ryu , Tae-Young Choi , Yong-Uk Lee , Woo-Jae Lee , Bo-Sung Kim
发明人： Min-Seong Ryu , Tae-Young Choi , Yong-Uk Lee , Woo-Jae Lee , Bo-Sung Kim
IPC分类号： H01L29/786 , H01L21/00 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/28 , H01L51/00 , H01L51/05
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/283 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0516 , H01L51/0541
摘要： A method of manufacturing a thin film transistor array panel includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; depositing an organic semiconductor layer on the data line, the drain electrode and exposed portions of the gate insulating layer; depositing a protection layer on the organic semiconductor layer; forming a photoresist on the protection layer, the photoresist having positive photosensitivity; etching the protection layer and the organic semiconductor layer using the photoresist as an etch mask; forming a passivation layer on the protection layer, the data line, and the drain electrode, the passivation layer having a contact hole exposing a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode via the contact hole.
摘要翻译：制造薄膜晶体管阵列面板的方法包括：在基板上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线，漏电极和栅极绝缘层的露出部分上沉积有机半导体层; 在所述有机半导体层上沉积保护层; 在保护层上形成光致抗蚀剂，光致抗蚀剂具有正的光敏性; 使用光致抗蚀剂蚀刻保护层和有机半导体层作为蚀刻掩模; 在所述保护层，所述数据线和所述漏电极上形成钝化层，所述钝化层具有暴露所述漏电极的一部分的接触孔; 以及在所述钝化层上形成像素电极，所述像素电极经由所述接触孔与所述漏电极电连接。

36. 发明申请

US20100244016A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：显示基板及其制造方法
公开(公告)号：US20100244016A1
公开(公告)日：2010-09-30
申请号：US12813440
申请日：2010-06-10
申请人： Young-Min Kim , Tae-Young Choi
发明人： Young-Min Kim , Tae-Young Choi
IPC分类号： H01L51/54
CPC分类号： H01L51/0023 , H01L27/283 , H01L51/0005 , H01L51/0512
摘要： In a manufacturing method of a display substrate according to one or more embodiments, a plurality of thin films are patterned by using a photoresist film pattern having different thicknesses in each area on a substrate as etch masks. The photoresist film pattern may be etch-backed at least twice during the manufacturing process of the display substrate and may be used as the etch mask for patterns having shapes different from each other. Accordingly, the number of processes for manufacturing the mask patterns, which may be formed by a photolithography method in order to pattern the thin films formed on the substrate, may be reduced.
摘要翻译：在根据一个或多个实施例的显示基板的制造方法中，通过使用在基板上的每个区域中具有不同厚度的光致抗蚀剂膜图案作为蚀刻掩模来对多个薄膜进行图案化。在显示基板的制造过程中，光致抗蚀剂膜图案可以被蚀刻至少两次，并且可以用作具有彼此不同形状的图案的蚀刻掩模。因此，为了对形成在基板上的薄膜进行图案化，可以通过光刻法形成掩模图案的制造工艺的数量可以减少。

37. 发明申请

US20060148141A1 Method of manufacturing a flexible thin film transistor array panel including plastic substrate 有权
公开(公告)号：US20060148141A1
公开(公告)日：2006-07-06
申请号：US11325156
申请日：2006-01-03
申请人： Jong-Hyun Seo , Tae-Young Choi
发明人： Jong-Hyun Seo , Tae-Young Choi
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/456 , H01L29/4908 , H01L29/78603
摘要： A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line including a source electrode, and a drain electrode on the semiconductor layer and the gate insulating layer; and forming a pixel electrode connected to the drain electrode.

38. 发明授权

US06192160B1 Hardware architectures for image dilation and erosion operations 失效
标题翻译：用于图像扩张和侵蚀操作的硬件架构
公开(公告)号：US06192160B1
公开(公告)日：2001-02-20
申请号：US08932132
申请日：1997-09-18
申请人： Myung Hoon Sunwoo , Soohwan Ong , Eul-suk Lee , Tae-Young Choi
发明人： Myung Hoon Sunwoo , Soohwan Ong , Eul-suk Lee , Tae-Young Choi
IPC分类号： G06K942
CPC分类号： G06K9/44 , G06T5/30
摘要： A hardware architecture for mathematical morphology operations such as dilation and erosion of an image signal is provided. A hardware architecture for an image dilation operation includes: a plurality of adders corresponding to the size of the structuring element for adding the image signal and a structuring element symmetrical to the image signal with respect to the origin to output the result; a plurality of stores for temporarily storing the signals output from the plural adders; a comparator for comparing data stored in the plural stores with feedback data to output the maximum data; and an outputting device for outputting the output signal of the comparator as a dilation operation value if the dilation operation with respect to all structuring elements for one image signal is completed and feeding back the output signal of the comparator as input data of the comparator if not. Therefore, the elementary operations such as dilation and erosion with respect to a gray-level image signal can be attained by a simple arithmetic operation, that is, by finding the maximum/minimum value using an adder. Also, since the hardware architecture for the dilation and erosion operations adopts a feedback structure, the volume of the hardware linearly increases even though the size of the structuring element increases in geometrical progression.
摘要翻译：提供了用于数学形态学操作的硬件结构，例如图像信号的扩张和侵蚀。用于图像扩张操作的硬件结构包括：对应于用于添加图像信号的结构元素的大小的多个加法器和与图像信号相对于原点对称的结构元素以输出结果; 多个存储器，用于临时存储从多个加法器输出的信号; 用于将存储在多个存储器中的数据与反馈数据进行比较以输出最大数据的比较器; 以及输出装置，用于如果相对于一个图像信号的所有结构元素的扩张操作完成并输出比较器的输出信号作为扩张操作值，并且将比较器的输出信号作为比较器的输入数据反馈。因此，通过简单的算术运算即通过使用加法器求出最大/最小值，可以获得关于灰度图像信号的基本运算，例如扩大和侵蚀。此外，由于用于扩张和侵蚀操作的硬件架构采用反馈结构，即使结构元件的尺寸在几何进程中增加，硬件的体积线性增加。

39. 发明授权

US5662092A Sphygmomanometer and method for controlling optimum pressurization and minute exhaustion while measuring blood pressure 失效
标题翻译：血压计和方法，用于在测量血压时控制最佳加压和微小排泄
公开(公告)号：US5662092A
公开(公告)日：1997-09-02
申请号：US505603
申请日：1995-07-21
申请人： Tae-Young Choi , Si-Chul Lee , Yong-Bum Kim
发明人： Tae-Young Choi , Si-Chul Lee , Yong-Bum Kim
IPC分类号： A61B5/0225 , A61B5/02
CPC分类号： A61B5/0225
摘要： A sphygmomanometer for controlling an optimum pressurization and minute exhaustion comprises a cuff which is wrapped around the upper arm of a subject for compressing the brachial artery. The cuff is pressurized with an air pump controlled by a microcontroller. The microcontroller is programmed to terminate the pressurization process at the point the systolic pressure is detected. The microcontroller further controls the exhaustion of air by switching a solenoid valve on and off and thereby negate the need for a costly minute exhaust valve. During the pressurization and depressurization process, pressure waves are transmitted from the brachial artery to a sensor where they are converted to an electrical signal for processing by the microcontroller. The microcontroller computes the systolic and diastolic pressure and routes the data to a display for visual readout.
摘要翻译：用于控制最佳加压和微小排泄的血压计包括围绕被检体的上臂包裹以压缩肱动脉的袖带。袖带用由微控制器控制的空气泵加压。微控制器被编程为在检测到收缩压的点终止加压过程。微控制器通过打开和关闭电磁阀来进一步控制空气的耗尽，从而不需要昂贵的分钟排气阀。在加压和减压过程中，压力波从肱动脉传递到传感器，在那里它们被转换成电信号以供微控制器处理。微控制器计算收缩压和舒张压，并将数据路由到显示器进行目视读取。

40. 发明授权

US5587982A Optical disk drive device capable of detecting misplacement of optical disks 失效
标题翻译：能够检测光盘错位的光盘驱动装置
公开(公告)号：US5587982A
公开(公告)日：1996-12-24
申请号：US547070
申请日：1995-10-23
申请人： Tae-Young Choi
发明人： Tae-Young Choi
IPC分类号： G11B17/02 , G11B7/0037 , G11B19/10 , G11B3/90 , G11B23/00
CPC分类号： G11B19/10 , G11B7/0037
摘要： An optical disk driving apparatus having a function for preventing misplacement of an optical disk within the optical disk driving apparatus, includes: a main body having an opening through which the optical disk moves in and out of the apparatus; a transfer portion for moving the optical disk into and out from the main body; a driving portion for rotatably driving the optical disk inserted into the main body; an optical pickup for detecting information recorded on the optical disk loaded on the driving portion; at least one light emitting portion for irradiating light upon a surface of the optical disk; at least one light receiving portion for receiving light irradiated by the light emitting portion(s) and reflected by the optical disk to detect the inserted state of the optical disk; and a circuit portion for transmitting information detected by the light receiving portion(s) to the transfer portion so that the optical disk is ejected from the apparatus before being loaded onto the driving portion when the optical disk is misplaced.
摘要翻译：具有防止光盘驱动装置中的光盘错放的功能的光盘驱动装置包括：主体，具有开口，光盘通过该开口移入和移出设备; 用于将光盘移入和移出主体的转印部分; 用于可旋转地驱动插入到主体中的光盘的驱动部分; 光拾取器，用于检测记录在装载在驱动部分上的光盘上的信息; 至少一个发光部分，用于将光照射在光盘的表面上; 至少一个光接收部分，用于接收由所述光发射部分照射并由所述光盘反射的光以检测所述光盘的插入状态; 以及电路部分，用于将光接收部分检测到的信息传送到传送部分，使得当光盘放错时，将光盘装载到驱动部分之前从设备中弹出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式