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    • 6. 发明授权
    • Organic thin film transistor array panel and manufacturing method thereof
    • 有机薄膜晶体管阵列面板及其制造方法
    • US08389992B2
    • 2013-03-05
    • US13164906
    • 2011-06-21
    • Bo-Sung KimWoo-Jae LeeMin-Seong Ryu
    • Bo-Sung KimWoo-Jae LeeMin-Seong Ryu
    • H01L31/20
    • H01L27/283H01L27/3274H01L51/0545H01L51/10H01L51/5237
    • A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
    • 提供一种制造薄膜晶体管阵列面板的方法,该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线,漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层,数据线和漏极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极,所述像素电极通过所述接触孔连接到所述漏电极。