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31. 发明授权

US07173888B2 Recording apparatus for and method of improving overwrite characteristics 失效
标题翻译：用于提高重写特性的记录装置和方法
公开(公告)号：US07173888B2
公开(公告)日：2007-02-06
申请号：US10457818
申请日：2003-06-10
申请人： Seong-sue Kim
发明人： Seong-sue Kim
IPC分类号： G11B7/00
CPC分类号： G11B7/006 , G11B7/1369 , G11B7/1374 , G11B7/139
摘要： A recording apparatus and method for recording a mark on a recordable recording medium includes an optical pickup having a light source and an objective lens for focusing light emitted from the light source as a light spot on a recording surface of a recording medium. When recording on a rewritable recording medium, the size of the light spot formed on the recording surface of a recording medium is increased more than when recording on a write once recording medium and/or reproducing from a recording medium. Accordingly, when recording on a rewritable recording medium, the size of a light spot is enlarged more than when recording on an only once writable recoding medium and/or reproducing from a recording medium. Thus, when a mark is recorded on the rewritable recording medium, the erasing rate of an existing recorded phase-change mark is increased to improve the overwriting characteristics.
摘要翻译：用于在可记录记录介质上记录标记的记录装置和方法包括具有光源和用于将从光源发射的光作为光点聚焦在记录介质的记录表面上的物镜的光学拾取器。当在可重写记录介质上记录时，形成在记录介质的记录表面上的光斑的尺寸比在一次写入记录介质上记录和/或从记录介质再现时增加更多。因此，当在可重写记录介质上记录时，与仅在一次可写入的记录介质上记录和/或从记录介质再现时相比，光斑的尺寸被扩大。因此，当在可重写记录介质上记录标记时，增加现有记录相变标记的擦除率以提高重写特性。

32. 发明授权

US09176375B2 Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit 有权
标题翻译：降低光掩模的配准误差的方法以及相关的光掩模和制造集成电路的方法
公开(公告)号：US09176375B2
公开(公告)日：2015-11-03
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

33. 发明授权

US08335038B2 Apparatus for measuring aerial image of EUV mask 有权
标题翻译：用于测量EUV掩模的航空图像的装置
公开(公告)号：US08335038B2
公开(公告)日：2012-12-18
申请号：US12910605
申请日：2010-10-22
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G01B11/30 , G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

34. 发明申请

US20110033025A1 APPARATUS FOR MEASURING AERIAL IMAGE OF EUV MASK 有权
标题翻译：用于测量EUV掩蔽的空中影像的装置
公开(公告)号：US20110033025A1
公开(公告)日：2011-02-10
申请号：US12910605
申请日：2010-10-22
申请人： DONG-GUN LEE , Seong-sue Kim
发明人： DONG-GUN LEE , Seong-sue Kim
IPC分类号： G21K5/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含该图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

35. 发明授权

US07821714B1 Apparatus and method for measuring aerial image of EUV mask 有权
标题翻译： EUV面罩航空图像测量装置及方法
公开(公告)号：US07821714B1
公开(公告)日：2010-10-26
申请号：US12659261
申请日：2010-03-02
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr;其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

36. 发明申请

US20140363633A1 METHODS OF REDUCING A REGISTRATION ERROR OF A PHOTOMASK, AND RELATED PHOTOMASKS AND METHODS OF MANUFACTURING AN INTEGRATED CIRCUIT 有权
标题翻译：降低光电二极管的注册错误的方法，以及相关的光电子元件和制造集成电路的方法
公开(公告)号：US20140363633A1
公开(公告)日：2014-12-11
申请号：US14176565
申请日：2014-02-10
申请人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
发明人： Sang-hyun Kim , Seong-sue Kim , Dong-gun Lee , Chalykh Roman , Mun-ja Kim
IPC分类号： G03F1/72 , H05K3/00 , G03F1/74
CPC分类号： G03F1/72 , G03F1/38 , G03F1/42 , G03F1/74 , Y10T428/24802
摘要： Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.
摘要翻译：提供降低光掩模的配准误差的方法。降低光掩模的配准误差的方法可以包括识别相对于光掩模的图案区域中的图案元素的配准误差。此外，该方法可以包括通过将能量束照射到与图案元件间隔开的光掩模的非图案区域的位置上来减小光掩模的非图案区域的一部分的厚度，以产生应力在图案元素。还提供了相关的光掩模和制造集成电路的方法。

37. 发明授权

US08422760B2 System for monitoring haze of a photomask 有权
标题翻译：用于监控光掩模雾度的系统
公开(公告)号：US08422760B2
公开(公告)日：2013-04-16
申请号：US12588490
申请日：2009-10-16
申请人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
发明人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.
摘要翻译：一种用于监视光掩模的雾度的系统，包括安装有光掩模的安装单元，向安装单元上安装的光掩模发射光束的发光单元，检测由所述光掩模发射的光束的衍射图案的检测单元发光单元并通过光掩模，以及分析单元，分析由检测单元检测的衍射图案。

38. 发明授权

US08335039B2 Method of measuring aerial image of EUV mask 有权
标题翻译： EUV面罩空间图像测量方法
公开(公告)号：US08335039B2
公开(公告)日：2012-12-18
申请号：US13238748
申请日：2011-09-21
申请人： Dong-gun Lee , Seong-sue Kim
发明人： Dong-gun Lee , Seong-sue Kim
IPC分类号： G02B27/44 , G03F7/20 , G21K1/06
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/84 , G21K2201/061
摘要： An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
摘要翻译：一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置，该装置包括包含图案的EUV掩模，在EUV掩模的第一侧上的偏光透镜，并且适于聚焦EUV光在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度，以及检测器，布置在EUV掩模的另一侧上，并且适于感测来自EUV掩模的EUV光，其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *＆sgr，其中NAzoneplate表示该区域透镜的NA，NAdetector表示检测器的NA，NAscanner表示扫描仪的NA，＆sgr 表示扫描仪的离轴度，n表示扫描仪的缩小倍率。

39. 发明申请

US20100111402A1 System for monitoring haze of a photomask 有权
标题翻译：用于监控光掩模雾度的系统
公开(公告)号：US20100111402A1
公开(公告)日：2010-05-06
申请号：US12588490
申请日：2009-10-16
申请人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
发明人： Dong-gun Lee , Seong-sue Kim , Jae-Hyuck Choi , Jin-sik Jung
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.
摘要翻译：一种用于监视光掩模的雾度的系统，包括安装有光掩模的安装单元，向安装单元上安装的光掩模发射光束的发光单元，检测由所述光掩模发射的光束的衍射图案的检测单元发光单元并通过光掩模，以及分析单元，分析由检测单元检测的衍射图案。

40. 发明申请

US20080036024A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080036024A1
公开(公告)日：2008-02-14
申请号：US11889122
申请日：2007-08-09
申请人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
发明人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14645
摘要： An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern. A method of manufacturing the image sensor may include forming the photoelectric converters; forming the interlayer insulating films; removing parts of the interlayer insulating films to form the opening portions; forming the light-transmissive portion to fill the opening portions; forming the color filters; and forming the microlenses.
摘要翻译：图像传感器可以包括在半导体衬底上具有单位像素区域的半导体衬底; 形成在单位像素区域的光电转换器; 层间绝缘膜覆盖光电转换器，并具有形成在光电转换器上方的开口部分; 填充所述开口部的透光部; 形成在透光部分上的滤色器; 和在滤色器上形成的微透镜。微透镜可以包括多个同心圆形图案和围绕同心圆图案布置的多个弧形图案。围绕特定同心圆图案的弧形图案可以具有与特定同心圆图案相同的中心。图像传感器的制造方法可以包括形成光电转换器; 形成层间绝缘膜; 去除层间绝缘膜的部分以形成开口部分; 形成所述透光部以填充所述开口部; 形成滤色片; 并形成微透镜。

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